医用回旋加速器生产正电子核素~(18)F条件分析与优化

分析医用回旋加速器正电子核素18F的照射条件和轰击参数对生产的影响,优化生产条件并给出最佳的轰击参数以期获得高效的生产产额。使用Origin 9.0软件绘制核素18F产量随不同质子束流强度和轰击时间的变化趋势曲线,以蒙特卡罗方法建立回旋加速器质子辐照靶室模型,分析不同质子能量、Havar膜和靶水厚度等对核素18F产量的影响,并给出18F生产最佳的束流强度、轰击时间和质子能量等生产参数。回旋加速器运行期间束流应充分聚焦于照射靶室中心位置,最大化的利用束流以引发足够多的核反应;根据质子束流的能量选择合适的Havar膜和靶水厚度,20 Me V质子束流轰击生产正电子核素18F的靶室系统使用Havar膜总计厚度60μm,靶水厚度3 mm,可获得最佳18F产量。总体而言,18F的产量随束流强度而增大,轰击时间越长18F产量越大,但随着轰击时间的延长增长趋势变缓,轰击时间建议60 min左右。正电子核素18F的生产需要选择合适的Havar膜和靶水厚度(当质子能量为20 Me V时,推荐Havar厚度60μm,靶水厚度3 mm),轰击时间建议60 min左右,开机启动稳定一段时间后再开始照射。     

强流脉冲质子束轰击19F靶产生6-7MeV准单能脉冲γ射线初步实验研究

给出了利用PIN半导体探测器和ST401塑料闪烁体配合光电倍增管测量的强流脉冲质子束轰击含^19F核素的靶产生的6—7MeV准单能脉冲γ射线的初步实验结果。理论上计算了质子束轰击C2F4靶产生的准单能脉冲γ射线产额和核反应截面随入射质子能量的变化曲线，提出了采用质子束传输法分离和降低轫致辐射干扰的方法，利用ST401配合光电倍增管和PIN半导体探测器测量了质子传输不同距离后轰击C2F4靶产生的6—7MeV准单能脉冲γ射线谱以及相对于轫致辐射的时间延迟数据，并根据飞行时间确定了束流峰值时刻的质子能量，还通过实验验证了Cu、Cr和不锈钢靶及其中所含的杂质不能产生明显的其它能量的γ射线干扰。     

强流脉冲电子束轰击作用下的扩散模型及其数值计算

在温度场和应力场计算的基础上建立了强流脉冲电子束轰击作用下的扩散模型,并给出了数值方法及其数值解。该模型与方法同样适用于其它高能束流作用下的扩散过程。计算表明,浓度扩散流仍然是影响扩散的主要因素;而轰击超过一定次数后,扩散的作用将减弱;当边界条件为表面扩散时,扩散进行较快,这是表面涂覆加脉冲电子束后处理快速表面合金化工艺的理论基础。对实验结果和理论结果的对比分析表明,在脉冲轰击下,扩散激活能随空位浓度的增加而下降,从而加速扩散过程;在表面有熔化的情况下,则液态时的对流混合作用是主导因素。     

电镀法制备富集112Cd靶

针对CS-30加速器制备高放射性核纯度¹¹¹In（≥99.9%）所用富集¹¹²Cd靶的电镀工艺进行了探索,首次根据加速器束流轰击径迹（束斑）实现定向区域电镀,在此基础上,对影响富集¹¹²Cd靶质量及厚度的各种因素进行研究,确定最佳工艺条件,最终所得富集¹¹²Cd靶表面光亮、致密、牢固,厚度大于65 mg/cm²。同时初步探索了富集¹¹²Cd靶厚与产额的关系,当富集¹¹²Cd靶厚为90 mg/cm²时,¹¹¹In产额为222 MBq/μA·h。     

BRISOL系统弱束流剖面成像仪（BPM）实验研究

在串列升级工程中，在线同位素分离器要产生并通过磁分析器分选出所要求的放射性核束，放射性核束束流强度很弱，一般为10^4～10^10s^-1。为了对束流进行有效的诊断，设计了采用在束流轰击时可发光的闪烁体，配合CCD摄像头直接获得光斑图像，进而得到束流分布相关信息的测量装置，即束流剖面成像仪（BPM），其组成如图1所示。     

利用二次核反应制备无载体~(18)F

本文叙述了利用国产水合二氧化铅作为色层柱,从中子照射过的Li_2CO_3中,制备无载体~(18)F的简单而有效的方法。研究了影响吸附和解吸的因素,测定了产品的纯度。用这种方法得到的化学产额>75%,产品几乎全部是~(18)F~-,未发现有其它γ放射性杂质,~3H含量不超过~(18)F强度的0.3%,Li和Zr的含量分别<1.3 ppm和3ppm,分离时间少于30min。     

几种有机物对AlSUB>2/SUB>OSU

采用静态法研究了几种有机物存在时,pH对Eu(Ⅲ)和Am(Ⅲ)在Al2O3上吸附的影响。实验结果表明,在Am(Ⅲ)和Eu(Ⅲ)的浓度较低(1~10 nmol/L)、液固比为100 mL/g及离子强度为0.05 mol/kg KNO3等实验条件下,与不加入任何有机物相比,当pH=3.5~5.0时,加入水杨酸、邻苯二甲酸、邻苯二酚后,Al2O3对这2种离子的吸附率随pH增加而增加;当pH<3.5或pH>5.0时,pH对这2种离子的吸附率几乎没有影响。加入富里酸后,当pH<4.5时,2种离子的吸附率随pH增加而增加,且与加入其它有机物相比,富里酸能明显提高这2种离子的吸附率;而当pH>5.0时,2种离子的吸附率随pH增加而下降。     

低能Xe离子辐照在Al表面上的光辐射研究

本文测量了200~550 keV的Xe10+离子轰击高纯度（9999%）Al表面诱发的溅射Al原子的光发射,研究了Al Ⅰ 30810、30914、39452、39628 nm光谱线强度比值和光子产额随入射离子能量的变化趋势。在本实验能量范围内,辐射光谱线强度比值随入射离子能量增加几乎不变,而发射谱线的光子产额随入射离子能量的增加呈现出不同趋势：入射离子能量为450 keV时,光子产额出现极大值,入射离子能量超过450 keV时,光子产额随能量的增加而减少,其变化趋势与核阻止本领随能量增加的变化没有出现类同的变化特征。结合核阻止和电子阻止效应对实验结果进行了讨论,结果表明：入射离子能量低于450 keV时,核阻止在碰撞中起主导作用,入射离子能量高于450 keV时,电子阻止在碰撞中起主导作用。     

离子源及厚靶参数对氘氚反应中子源中子产额的影响

用厚靶氘氚(D-T)反应中子产额的计算方法模拟计算了入射氘离子能量为120 keV时D-T中子源的中子产额。研究了氘离子源产生的束流中单原子氘离子(D+)及双原子氘离子(D2+)比例对中子产额的影响。结果表明,提高D+比例,同时降低D2+比例将有效提高中子产额。另外还研究了不同靶膜材料及组分引起的中子产额变化。表明中子产额与靶膜中氚的含量成正比,与靶膜元素的原子质量成反比。同时分析讨论了离子源品质及靶参数对中子源整体性能的影响,得出离子源束流品质的提高对中子源整体的设计至关重要。最后,模拟计算了靶膜表面有氧化层情况下中子产额的变化,并与实验结果作了对比。在此基础上提出了一种新的靶设计方案,并对其物理可行性进行了研究。     

医用核素~(111)In提取工艺的方法研究

用二-(2-乙基已基)磷酸(HDEHP),异丙醚和乙醚溶剂萃取In(Ⅲ),测定了In(Ⅲ)在有机相和水相之间的分配比。在HDEHP-HNO_3和HDEHP-HClO_4体系中,In(Ⅲ)的分配比随酸度的增加而下降。在异丙醚-HBr和乙醚-HBr体系中,In(Ⅲ)的分配比随酸度的增加而增加。In(Ⅲ)的分配比随HDEHP浓度的增加而增加,随In(Ⅲ)浓度的增加而下降。In(Ⅲ)分配比的顺序是HDEHP-HNO_3,HDEHP-HClO_4,异丙醚-HBr和乙醚-HBr依次减小。在HDEHP-HNO_3,HDEHP-HClO_4,异丙醚-HBr体系中的化学产额分别是96.13％,91.2％和88.9％。在回旋加速器外靶装置上和内靶装置上,选择了能量为24～27MeV,束流强度分别为9μA和140/μA的α粒子轰击银靶和电镀银靶。累计荷电量为80μA·h和750μA·h。在辐照后的镀银靶中,用HDEHP溶剂萃取完成~(111)In的放射化学分离。~(111)In的放射化学产额是4.4MBq·μA~(-1)·h~(-1)。在1ml~(111)InCl_3注射液中(放射性浓度为74MBq/ml),杂质元素Cu,Fe,Zn和Ag的含量分别是:0.99μg,0.48μg,0.11μg和0.05μg。     

Design study on an accelerator-based facility for BNCT and low energy neutron source

We have challenged to reduce an accelerator beam power for an accelerator-based BNCT facility. The required neutron source strength at the target has been estimated so as to make the epithermal neutron flux in the patient irradiation field exceed 1.7 × 10⁹ n/cm²s. The energy of the incident proton and the arrangement of the moderator assemblies are optimized. The beam current and the accelerating voltage are determined so that the accelerator power becomes minimum. The beam power required for the treatment in one hour is 62.5 kW. The proposed facility is equipped with a 2.5 MeV proton accelerator of 25 mA. a lithium target, and a heavy water moderator contained in an aluminum tank.     

Comparison of Methods for Irradiating Prone Patients

The results of irradiation with an 18 MeV rotating gamma-ray setup and three variants of equipment for proton beam transport – horizontal beam, rotating universal GANTRI, and a planar system with irradiation direction limited to ±45° to the horizontal – are compared. The average values of three parameters averaged over the target size and position are obtained for each type of equipment – the fraction of the total dose that strikes the target, the ratio of the average (specific) irradiation dose to healthy tissue to the dose in the target, and the ratio of these quantities. Comparing the results shows that it is desirable to adopt simple planar systems in proton and ion therapy.     

AB-BNCT中子靶物理设计分析

质子加速器适用于为硼中子俘获治疗提供中子源,其中子源强及能谱较反应堆中子源更具可调性。中子靶物理计算分析是加速器中子源设计的基础,为其提供粒子能量、流强等参数需求分析,并为靶体结构尺寸设计、中子慢化和屏蔽分析等提供前端参数。本文利用MCNPX蒙特卡罗程序,通过对质子打靶的中子产额和能谱、靶体能量沉积、打靶后靶材放射性活度和中子出射空间角分布等进行研究,提出能量2.5 MeV质子轰击100～200 μm锂靶的设计,并用模拟计算数据论证其合理性。该设计中子源在1 mA流强质子轰击下,源强可达9.74×10¹¹ s^-1;拟设计15 mA、2.5 MeV质子束产生的中子源,在治疗过程中靶材放射性活度累积最大值约为1.44×10¹³ Bq。     

MEGAPIE at SINQ - The first liquid metal target driven by a megawatt class proton beam

The lead-bismuth liquid metal target MEGAPIE (MEGAwatt Pilot Experiment) was operated at the Swiss Spallation Neutron Source SINQ starting mid-August 2006, for a scheduled irradiation period until 21st of December 2006. The continuous (51 MHz) 590 MeV proton beam hitting the target reaches routinely an average current of ∼1300 μA, corresponding to a beam power 0.77 MW. This article illustrates the main features of the target and the ancillary systems specially needed for the liquid metal target operation. Further, the operational experiences made with this target during start-up and routine operation are summarized, besides the general performance highlighting new beam and target safety devices, and last but not least the neutronic efficiency in relation to the previously operated solid lead target.     

Investigation on the Priming effect of a CVD diamond microdosimeter

CVD Diamond microdosimeter is an ideal substitute of common Si,GaAs detector for extremely strong radiation experimental environment due to its high band gap energy,fast charge collection,low dielectric constant and hardness.In order to improve its character,a CVD diamond microdosimeter was irradiated by a proton dose of 46 Gy,and a lateral micro-ion beam induced charge (IBIC)technique was utilized to characterize it in low beam current(-fA),It was clearly shown that charge collection efficinecy and energy resolution were greatly improved after proton irradiation of that dose.Moreover,the homogeneities of both its counting performance and collection efficiency were enhanced.Proton irradiation of 46Gy has been proved to be an effective way to prime a CVD diamond.     

Oxygen effects on irradiated tantalum alloys

Ta and Ta-1% W are being considered to be used as target clad materials in the LANSCE proton beam line for the material test station (MTS). To investigate the embrittlement of these materials due to oxygen contamination and proton irradiation, Ta and Ta-1 wt% W (as received and with ∼400 ppm O) were exposed to a 3.5 MeV proton beam at the ion beam materials laboratory at LANL. After irradiating the samples in the proton beam, nanoindentation was performed in cross-section to investigate the hardness increase of the materials due to irradiation. The nanoindentation showed that the hardness increase due to irradiation is between 9% and 20% depending on the material. The results show good agreement with mechanical testing results on tantalum and Ta-1 wt% W after high energy proton irradiation to doses up to 23 dpa.     

在线同位素分离器靶-源中靶材料的放射性活度

用LCS+CBURN程序计算在线同位素分离器靶-源中铅、钨、铜、铝、石墨靶材料以及结构材料水、不锈钢在100MeV、200μA强流质子束照射下所产生的放射性核素活度以及γ射线强度随时间的变化,以便为靶的设计、更换以及后期处理提供一定的设计依据。所选靶材料在照射后会产生长寿命放射性核素氚,其中,铅靶材料中还会产生¹³¹I。     

Micro-machining of resists on silicon by proton beam writing

We report micro-machining of resists on silicon by proton beam writing (PBW) at Takasaki Ion Accelerators for Advanced Radiation Application (TIARA), JAEA Takasaki, Japan. We studied the proton beam irradiation effects on typical positive and negative resists such as PMMA and SU-8, respectively, for application of the PBW technique to micro-machining. These resist materials were subjected to the scanning of a focused beam of protons accelerated using the microbeam facility of TIARA. Diameter of the proton beam was focused to about 1 μm. The fluence was varied to examine the irradiation effects on these resists as a function of the beam current and irradiation time. After exposure to proton beam, samples were developed and evaluated by a scanning electron microscope. Attempts to fabricate nickel stamps were also made by electroplating on the structures formed by PBW for application to imprint lithography.     

100 MeV回旋加速器的高功率质子束流线研制

为调试100 MeV回旋加速器高功率束流及放射性同位素研制,设计了一条高功率质子束流线及可插拔式高功率束流调试靶。研究了100 MeV回旋加速器引出区色散效应及剥离膜的散射效应,从而优化了光学模拟的初始参数,使得模拟结果更加精确。高功率束流调试靶设计为可插拔式以代替常用固定式调试靶,该靶插入束流管道中时可进行高功率质子束流调试,在拔出时,质子束流可直接轰击束流线终端的靶站以生产放射性同位素。优化了高功率束流调试靶的水冷结构,确保调试靶可承受500 μA以上的质子束流。经调试,该束流线可传输最高流强520 μA的质子束流。     

Optical measurements and analytical modeling of magnetic field generated in a dieletric target

Polarization rotation of a probe pulse by the target is observed with the Faraday rotation method in the interaction of an intense laser pulse with a solid target.The rotation of the polarization plane of the probe pulse may result from a combined action of fused silica and diffused electrons.After the irradiation of the main pulse,the rotation angle changed significantly and lasted ～2 ps.These phenomena may imply a persistent magnetic field inside the target.An analytical model is developed to explain the experimental observation.The model indicates that a strong toroidal magnetic field is induced by an energetic electron beam.Meanwhile,an ionization channel is observed in the shadowgraph and extends at the speed of light after the irradiation of the main beam.The formation of this ionization channel is complex,and a simple explanation is given.