低温电沉积硅工艺研究进展

半导体硅的传统制备工艺主要有直拉法、区熔法及气相沉积法等,这些制备工艺都需要在高温下进行,且涉及到大型设备,制备成本较高,操作较为复杂。采用低温电沉积法制备硅具有简单可控、低成本的特点,因而受到了研究者青睐。主要从电极、溶剂的选取及电沉积方法等方面阐述了低温电沉积硅工艺研究现状,同时对低温电沉积硅存在的问题和发展趋势进行了讨论。     

钽在集成电路中的应用

介绍了在硅基片上用钽溅射靶溅射沉积和用钽的化合物气相化学沉积钽基膜（金属钽，碳化钽，氮化钽，硅化钽，氮化硅化钽，氮化碳化钽）作为集成电路中防止铜向基片硅中扩散的阻挡层，介绍了钽溅射靶的技术要求，加工方法以及化学气相沉积钽基薄膜的方法。     

电泳沉积法制备固体电解质薄膜的沉积速率和沉积机理

研究了用电泳沉积法的制备含钇８末在悬浮介质中的荷电机理；采用界面移动法测定了８ＹＳＺ粉末在有机悬浮液中的电泳淌度和ξ电势，研究了ξ电势的影响因素；考察了８ＹＳＺ粉末在有机悬浮液中的分散性和稳定性；研究了电泳沉积的动力学规律，确定了电泳沉积过程的速度控制步骤，推导出电泳沉积速率方程。利用重复沉积－烧结法制备的致密化薄膜厚度不２６￣５６μｍ，硬度为４．３３ＧＰａ，在１０００℃时Ｏ＾－２电导率为１２．２     

NaCl-KCl-NaF-SiO_2熔盐体系电沉积渗硅的研究

在KCl-NaCl-NaF-(SiO2)熔盐体系中,以钼为基体,以电沉积法得到的硅为硅源,在电沉积硅的同时进行渗硅,成功制备了Mo-MoSi2梯度材料。考察了电沉积给电方式、电流密度、温度、时间和脉冲形式对沉积扩散层表面形貌、相结构、断面厚度以及硅含量分布的影响。结果表明,脉冲给电比直流给电的沉积效果好。合适的脉冲沉积参数为:电流密度750~1 000A/cm2、温度800~850℃、t1/t2=0.7~1.5、沉积时间120~180min。     

用气相沉积法制取钨制品

六氟化钨氢还原沉积钨,即气相沉积钨是钨冶炼中的一项先进技术.利用气相沉积法已制取了各种钨制品.文中介绍了用气相沉积法制取钨制品的工艺与设备,讨论了影响生产过程和制品质量的因素,论述了制得的制品的结构与性能,并指出了这种方法的应用前景.     

气相沉积法制取包复粉末

简述气相沉积法基本原理和工艺，同时介绍国外在金刚石或艾尔硼上镀金属膜     

金属钨涂层制备工艺的研究进展

金属钨属于难熔金属,具有高的强度和硬度,同时具有良好的化学稳定性,不易受到腐蚀,但其昂贵的价格及难加工特性限制了其应用,因此,用金属钨作为涂层材料来改善基体材料的性能,引起了众多研究者的关注。该文综述纯金属钨涂层的几种重要制备方法,包括:熔盐电镀法,等离子喷涂法,爆炸喷涂法,气相沉积法等。等离子喷涂是钨涂层制备中最为成熟的1种方法,基体材料不受限制,涂层厚度容易控制。熔盐电镀法能够通过电化学反应从化合物中一步获得厚度均匀的金属钨涂层,并且可避免引入氧和碳等杂质。化学气相沉积法获得的钨涂层致密度高;物理气相沉积法可以在任意基材上获得钨涂层。同时介绍这些方法各自的技术特点和目前的研究现状,并对金属钨涂层的制备方法进行展望。     

硬质合金刀具涂层技术的研究进展

随着涂层技术的进步，使得硬质合金刀具涂层方法在不断地进步，日趋复杂化和多样化；硬质合金刀具涂层种类也在不断地更新，从单一的化合物涂层朝着多元复杂化合物涂层发展，涂层层数也从几层到十几层发展。本文简要地综述了目前国内外涂层硬质合金刀具的特点，高温化学气相沉积涂层(HTCVD或简称CVD)、物理气相沉积涂层(PVD)、等离子化学气相沉积涂层(PCVD)、中温化学气相沉积涂层(MTCVD)和离子辅助物理气相沉积涂层(IBVD)这5种硬质合金刀具涂层方法的机理、特点和缺点，以及单渗层涂层硬质合金、多渗层涂层硬质合金和新渗层涂层硬质合金这3种硬质合金刀具涂层的特点和应用。     

硬质合金刀具涂层的研究进展

随着科学技术的飞速发展,用于机械加工、矿山采掘的硬质合金刀具在不断的更新,刀具涂层技术也在日趋多样化和复杂化,对生产工艺的要求也随之提高.文中介绍了硬质合金刀具涂层的2种主要制备方法即化学气相沉积法（CVD）和物理气相沉积法（PVD）, 简述了刀具涂层即单组分涂层、多组分涂层、多层涂层和梯度涂层的发展,概括了几种新型涂层即金刚石涂层、类金刚石涂层、立方氮化硼涂层和氮化碳涂层,对未来硬质合金刀具涂层的发展方向进行了展望.      

高硅钢的PCVD制造工艺及其电磁性能

采用正交试验法对ＰＣＶＤ等离子体增强化学气相沉积渗硅的工艺进行了优化。在４０％ＳｉｎＨ２ｎ＋２＋６０％Ａｒ（质量分数）渗硅源中，电工钢于４８０℃ＰＣＶＤ处理４０ｍｉｎ，其表面可形成厚２０μｍ富硅层，再经１１００℃扩散１ｈ，电工钢铁损下降４９．５％Ｂ２５００提高６５％，电磁性能得到极大的改善。     

铱金属及其氧化物薄膜的制备与应用研究进展

铱及其氧化铱薄膜具有优良的耐腐蚀、抗氧化特性，同时也具有极好的电化学特性，这使它在电学、抗氧化涂层、催化领域都有广泛的应用。综述了近年来有关金属铱及其氧化铱薄膜的合成与制备技术的一些最新进展。总的来看，制备方法可分为物理法和化学法。其中物理法包括溅射法、激光熔蒸法；化学法包括金属有机化学沉积法、热分解法、电化学沉积法、溶胶凝胶法等，对各种制备方法进行了评述，同时对铱及其氧化铱薄膜的应用领域进行了综述，并对今后铱及其氧化铱薄膜的制备发展趋势进行了预测。     

Review of Nickel-Based Electrodeposited Tribo-Coatings

Among various methods used for protecting the industrial components from wear/abrasion failures, electrodeposition has attracted considerable attention in recent years because of its advantages such as being efficient, accurate, affordable, and easy to perform. In this regard, electrodeposition of nickel-based composite and alloy coatings is an inexpensive method compared with other coating methods such as chemical vapor deposition and physical vapor deposition. Furthermore, nickel-based composite electrodeposition is an eco-friendly substitute for conventional toxic coatings such as hard chrome. Embedding hard particles within the metallic matrix improves the wear resistance by increasing the ductility of the matrix in the contact area, changing the preferred grain growth direction to close-packed directions, and boosting dispersion and grain-refinement strength. In addition, lubricant particles provide superior anti-abrasive behavior because of their non-sticky nature. Several factors affect the incorporation of the particles into the electrodeposited coating and therefore the wear behavior of these coatings is related to different parameters such as current density, bath composition, pH, amount and size of the embedded particles. This review paper provides an overview of the wear behavior of nickel-based electrodeposited coatings including their composites and alloys with the focus on the parameters affecting wear rate, coefficient of friction, hardness, and roughness.     

Experimental approaches to simulating interfacial reactions in metal matrix composites

Samples of a titanium aluminide have been subjected to treatments designed to simulate their contact with the protective layer of a commercial silicon carbide fiber; such contact occurs during fabrication of actual metal matrix composites (MMCs). The first treatment consisted of immersion of the matrix material in a powder mixture, the composition of which corresponded to that of the protective layer of the fiber. The second method was the chemical vapor deposition (CVD) of such a layer. Subsequent isothermal exposure treatments showed that these methods produced interfacial reaction layers which very closely resembled the layers present in actual composites. It is concluded that approaches such as these are viable methods for evaluating the efficiency of potential coatings or surface modifications without the necessity of performing full-scale composite fabrication tests.     

刀具涂层技术的研究现状和发展趋势

结合近年来刀具涂层技术的发展状况,介绍了各种刀具涂层材料,结构以及制备方法。将涂层材料分为硬涂层与软涂层进行了介绍。综述了各种涂层结构。刀具涂层的制备方法包括化学气相沉积法（CVD）、物理气相沉积法（PVD）、等离子体化学气相沉积法（PCVD）和溶胶-凝胶法（Sol-Gel）等。介绍了刀具涂层工艺的研究现状,并对刀具涂层的发展方向进行了探讨。     

C/C复合材料致密化工艺研究新进展

介绍了C/C复合材料的致密化工艺,包括液相浸渍工艺、化学气相沉积工艺、快速低成本致密化工艺以及其它致密化工艺。     

硅外延及其应用

介绍了硅外延生长技术,综述了应用于硅外延的分子束外延（MBE）、化学气相沉积（CVD）、液相沉积（LPE）三种工艺,并介绍了Si基外延材料器件的应用。     

石墨电极高温抗氧化技术研究现状

概述石墨电极抗氧化技术的研究现状，重点介绍选择抗氧化涂层体系的要求及涂层制备方法，包括包埋浸渗法、化学气相沉积法、等离子喷涂法及溶胶--凝胶法．展望了石墨电极材料高温抗氧化涂层研究的方向．     

Three-dimensional mathematical model for transport phenomena in horizontal chemical vapor deposition reactors

A three-dimensional (3-D) mathematical model describes the transport phenomena and the resulting rate of deposition in horizontal chemical vapor deposition (CVD) reactors. The model employs a finite difference scheme to solve the governing partial differential equations to predict the velocity field, temperature distribution, and concentration profiles of various gas species. The rate of silicon deposition by the reaction of SiCl₄ and H₂ is predicted. The model shows that the buoyancy-driven flow in such reactors has a marked effect on the uniformity of deposition. In these calculations, the concepts of local equilibrium at the substrate and thermal diffusion of SiCl₂ away from the substrate were considered in evaluating the rate of silicon deposition. Incorporation of these factors has significantly improved the predictive capability of the model. The rates of silicon deposition were calculated for two different thermal boundary conditions which had a pronounced effect on the uniformity of deposition. Substrate tilt contributes to the production of a more uniform silicon deposition. The model was used as a computer-aided design tool for process optimization; a simple addition of two fins to the top wall (without any substrate tilt) of the reactor can significantly reduce the secondary roll cell formation and should lead to more uniform deposition.