Design and Analysis of InGaN-GaN Modulation-Doped Field-Effect Transistors (MODFETs) for 90 GHz Operations

A Modulation-Doped Field-Effect Transistor (MODFET) structure having quantum wire channel realized in InGaN-GaN material system is presented. This paper presents design and analysis of a novel one-dimensional Modulation-Doped Field-Effect transistor (1D MODFET) in InGaN-GaN material system for microwave and millimeter wave applications. An analytical model predicting the transport characteristics of the proposed MODFET device is also presented. Analytical results of the current-voltage and transconductance characteristics are presented. The unity-current gain cutoff frequency (f _T) of the proposed device is computed as a function of the gate voltage V _G. The results are compared with two-dimensional GaN/AlGaN MODFET and HFET devices. The analytical model also predicts that 0.25 μm channel length devices will extend the use of InGaN-GaN MODFETs to above 90GHz.     

Effect of Temperature Variation on the Characteristics of Microwave Power AlGaN/GaN MODFET

The prime motivation for developing the proposed model of AlGaN/GaN microwave power device is to demonstrate its inherent ability to operate at much higher temperature. An investigation of temperature model of a 1 μm gate AlGaN/GaN enhancement mode n-type modulation-doped field effect transistor (MODFET) is presented. An analytical temperature model based on modified charge control equations is developed. The proposed model handles higher voltages and show stable operation at higher temperatures. The investigated temperature range is from 100 °K–600 °K. The critical parameters of the proposed device are the maximum drain current (I_Dmax), the threshold voltage (V_th), the peak dc trans-conductance (g_m), and unity current gain cut-off frequency (f_T). The calculated values of f_T (10–70 GHz) at elevated temperature suggest that the operation of the proposed device has sufficiently high current handling capacity. The temperature effect on saturation current, cutoff frequency, and trans-conductance behavior predict the device behavior at elevated temperatures. The analysis and simulation results on the transport characteristics of the MODFET structure is compared with the previously measured experimental data at room temperature. The calculated critical parameters suggest that the proposed device could survive in extreme environments.     

On the stability of real exponential polynomials with interval-valued delays

We consider the family ? of exponential polynomials. $$f_T (z): = f_0 (z) + f_1 (z)e^{ - zT_1 } + f_2 (z)e^{ - T_2 } + \cdots + f_n (z)e^{ - zT_n } ,T : = T_1 \times T_2 \times \cdots \times T_n ,$$ where thef _k(z),k=0(1)n, are real polynomials under the degree restriction deg(f ₀)>deg(f _k),k=1(1)n, and theT _k,k=1(1)n, are intervals inR ₊. The functions in ? are characteristic functions of linear, retarded dynamical systems with constant coefficients and finitely many interval-valued discrete delays. A stability criterion for ? is expounded; ? is stable if (a) ? contains a stable member and (b) a certain functionalT:S(y) →; {0, 1} vanishes fory in a compact interval inR ₊. Here,S(y) is the boundary of a circular are regionS(y) in the complex plane derived fromf _T. Tools needed for a computer implementation are compiled.     

Specific features of the charge carrier mobility in nanowires in transverse electric and magnetic fields

The effect of an electric field E orthogonal to the quantum-wire axis and a magnetic field H (H ⊥ E, H ‖ E) on conductivity is studied within the context of the parabolic potential model. It is shown that, if the interaction of charge carriers with the rough surface of the nanostructure is taken into account, the charge-carrier mobility μ as a function of increasing E is described by an unsteady oscillating curve. A physical interpretation of such behavior of μ with E is proposed. The specific features of mobility in a transverse magnetic field are discussed.     

Indium Gallium Arsenide Quantum Dot Gate Field-Effect Transistor Using II–VI Tunnel Insulators Showing Three-State Behavior

This paper presents an indium gallium arsenide (InGaAs) quantum dot gate field-effect transistor (QDG-FET) that exhibits an intermediate “i” state in addition to the conventional ON and OFF states. The QDG-FET utilized a II–VI gate insulator stack consisting of lattice-matched ZnSe/ZnS/ZnMgS/ZnS/ZnSe for its high-κ and wide-bandgap properties. Germanium oxide (GeO _x )-cladded germanium quantum dots were self-assembled over the gate insulator stack, and they allow for the three-state behavior of the device. Electrical characteristics of the fabricated device are also presented.     

Carbazole and benzimidazole/oxadiazole hybrids as bipolar host materials for sky blue,green, and red PhOLEDs

Two novel bipolar host materials (CBzIm and COxaPh) comprising of a hole-transport (HT) carbazole core functionalized with electron-transport (ET) moieties (benzimidazole/oxadiazole) at C3 and C6 positions have been synthesized. Their thermal, photophysical, electrochemical properties, and carrier mobilities were characterized. Theoretical calculations revealed that the HOMO orbitals were generally delocalized over the hole- and electron-transport moieties for both CBzIm and COxaPh, whereas the LUMO orbitals distribution only involved one benzimidazole moiety in CBzIm instead of fully delocalization over the whole polar moieties for COxaPh, which is consistent with the observation of good hole mobilities for both hosts and better electron mobility for COxaPh over CBzIm. CBzIm with high E_T (2.76 eV) is suitable to serve as a blue phosphor host, where a sky blue phosphor (DFPPM)₂Irpic exhibiting superior properties than those of popular blue emitter FIrpic was used to give highly efficient phosphorescent OLEDs, achieving a maximum external quantum efficiency (η_ext) of 15.7%. The better π-delocalization of COxaPh led to a lower triplet energy (E_T = 2.65 eV), which can be used to accommodate green and red phosphors, providing excellent device performance with η_ext as high as 17.7% for green [(ppy)₂Ir(acac)] and 20.6% for red [Os(bpftz)₂(PPh₂Me)₂], respectively.     

Electron-phonon damping factor for the landau quantization of 2D electrons with a fine structure of the energy spectrum

The drift of degenerate 2D electrons in the channel of the heterojunction potential well is considered. In a quantizing magnetic field B, the electrons scan the defects of the heteroboundary, which perturb their momentum and energy equilibrium state (T, T _D ⁰ ). The stationary nonequilibrium state (T, T _D ^* ) is attained by electron-phonon relaxation in energy and momentum. The experimentally observed nonlinear dependence T_D(T) is explained by the admixture of deformation acoustic phonons to the interaction of 2D electrons with piezoelectric phonons.     

Traveling wave amplifier using “VP×B” effect

The “v _p ×B” effect is introduced into a traveling wave amplifier trying to increase its output power and efficiency. The numerical calculating results show that by introducing an tapered static magnetic field into a traditional traveling wave amplifier, its output power and efficiency can be increased obviously comparing with an ordinary traveling wave amplifier, because of the effective interactive duration of electron bunches and a rf field is extended by the “v _p ×B” effect.     

Effect of nonstoichiometry and doping on the photoconductivity spectra of GeSe layered crystals

The polarization photoconductivity spectra of Bi-doped nonstoichiometric GeSe layered crystals grown by static sublimation were investigated. Two strongly polarized maxima at the photon energies hν_max = 1.35 eV (E ∥ a) and 1.44 eV (E∥ b) due to the V ₁ ^V → V ₁ ^c and Δ ₂ ^v → Δ ₁ ^c optical transitions, respectively, were found in the spectra of nominally undoped GeSe crystals near the intrinsic absorption edge at 293 K. In the low-temperature region, an exciton photoconductivity band peaked at hν_max=1.32 eV, which is due to exciton dissociation at the cation vacancies, was revealed. With an increase in excess Se in crystals, a sharp increase in the intensity of the exciton peak in the photoconductivity spectra was observed. It is shown that doping of GeSe crystals with donor Bi impurity is an effective tool of the control of their electrical and photoelectric properties. Although introduction of Bi into germanium monoselenide does not lead to the conductivity conversion from the p to n type, a sharp increase in the resistivity is observed, the crystals become photosensitive, and a strong impurity band peaked at 1.11 eV arises in the photoconductivity spectra.     

Donor–Acceptor–Donor Modular Small Organic Molecules Based on the Naphthalene Diimide Acceptor Unit for Solution-Processable Photovoltaic Devices

Two novel solution-processable small organic molecules, 4,9-bis(4-(diphenylamino)phenyl)-2,7-dioctylbenzo[3,8]phenanthroline-1,3,6,8(2H,7H)-tetraone (S6) and 4,9-bis(benzo[b]thiophen-2-yl)-2,7-dioctylbenzo[3,8]phenanthroline-1,3,6,8 (2H,7H)-tetraone (S7), have been successfully designed, synthesized, characterized, and applied in solution-processable photovoltaic devices. S6 and S7 contain a common electron-accepting moiety, naphthalene diimide (NDI), with different electron-donating moieties, triphenylamine (S6) and benzothiophene (S7), and are based on a donor–acceptor–donor structure. S7 was isolated as black, rod-shaped crystals. Its triclinic structure was determined by single crystal x-ray diffraction (XRD): space group \(P\bar{1}\) , Z = 2, a = 9.434(5) Å, b = 14.460(7) Å, c = 15.359(8) Å, α = 67.256(9) degrees, β = 80.356(11) degrees, γ = 76.618(10) degrees, at 150 Kelvin (K), R = 0.073. Ultraviolet–visible absorption spectra revealed that use of triphenylamine donor functionality with the NDI acceptor unit resulted in an enhanced intramolecular charge transfer (ICT) transition and reduction of the optical band gap compared with the benzothiophene analogue. Solution-processable inverted bulk heterojunction devices with the structure indium tin oxide/zinc oxide (30 nm)/active layer/molybdenum trioxide (10 nm)/silver (100 nm) were fabricated with S6 and S7 as donors and (6,6)-phenyl C₇₀-butyric acid methyl ester (PC₇₀BM) as acceptor. Power conversion efficiencies of 0.22% for S6/PC₇₀BM and 0.10% for S7/PC₇₀BM were achieved for the preliminary photovoltaic devices under simulated AM 1.5 illumination (100 mW cm^?2). This paper reports donor–acceptor–donor modular small organic molecules, with NDI as central accepting unit, that have been screened for use in solution-processable inverted photovoltaic devices.     

Biosensors based on a method for determining the conductance matrix of multiterminal semiconductor nanostructures

A method for determining the conductance matrix is analyzed to study the properties of silicon nanostructures fabricated within Hall geometry on an n-type Si(100) surface as ultra-narrow p-type silicon quantum wells bounded by δ barriers heavily doped with boron. Within the proposed approach, the total current flowing through the multiterminal silicon nanostructure is written in the matrix form as I = G · V, where I and V are the columns of currents and voltages for each of the N terminals, G is the N × N conductance matrix uniquely describing the conductance of the structure under study, taking into account the contribution of contact-area resistances. The high sensitivity of matrix elements to changes in the state of the silicon nanostructure surface under conditions of the precipitation of sodium-acetate solution containing single-strand synthetic oligonucleotides is demonstrated. The prospects of practical application of the results obtained in developing modern biosensors based on determining the conductance matrix of multiterminal semiconductor nanostructures are discussed.     

The impurity optical absorption and conduction band structure in 6H-SiC

Absorption spectra of nitrogen-doped n-type 6H-SiC crystals were studied for two orientations of the light wave electric field (E) relative to the optical axis (C), E ∥ C and E ⊥ C, within the range from the near-infrared region to the fundamental band. For E ∥ C, a weak absorption band peak at 2.85 eV was investigated for the first time. All the absorption bands observed are attributed to donor (nitrogen) photoionization, as a result of which electrons are transferred to the conduction-band upper minima that correspond to different critical points of the Brillouin zone. A combined analysis of the new data obtained in this study, the previous experimental results concerning photoionization of nitrogen, and theoretical data on 6H-SiC conduction band structure made it possible to refine the arrangement and symmetry of the additional conduction-band extrema in the Brillouin zone.     

On the photopleochroism coefficient and its temperature dynamics in native oxide-p-InSe heterojunctions

The temperature dependence of the photopleochroism coefficient for a native oxide-p-InSe heterojunction is studied. Different temperature dependences of the shift of the photocurrent long-wavelength edge are recorded for two polarization orientations E ‖ C and E ⊥ C.     

Permittivity spectra and characteristic energy losses of electrons in ZnO at 100 K

For the first time, full sets of fundamental optical functions have been obtained for zinc oxide in the range 0–30 eV at 100 K for E ⊥ c and E ‖ c polarizations. Spectra of the transverse and longitudinal components of transitions and their basic parameters (peak energies E _i , half-widths H _i of transition bands, band areas S _i , and oscillator strengths f _i ) have also been determined for the first time. The calculations are performed using synchrotron experimental reflectance spectra. The main features of spectra of the optical functions and components of transitions are established. These features are compared to the results of known theoretical calculations of the bands and spectra of optical functions.     

Bifunctional organic materials for OLEDs based on Tröger’s base: Subtle structural changes and significant differences in electroluminescence

Three bifunctional organic materials based on Tröger’s base (TB) scaffold have been designed, synthesized and their functional utility in OLEDs demonstrated through fabrication of devices. The diarylamino-functionalized TBs, i.e., A-TB, PA-TB and P-TB, are all amorphous with considerably high T_gs and permit modulation of electroluminescence with variation of one of the N-aryl rings, e.g., anthryl to 10-phenylanthryl to pyrenyl. Subtle structural modifications are found to manifest in rare pure yellow EL emission from PA-TB.     

Self-Aligned SiGe MOS-Gate FET with Modulation-Doped Quantum Wire Channel for Millimeter Wave Application

This paper describes a self-aligned SiGe MOS-gate field-effect transistor (FET) having a modulation-doped (MOD) quantum wire channel. An analytical model based on modified charge control equations accounting for the quantum wire channel, is presented predicting the transport characteristics of the MOS-gate MODFET structure. In particular, transport characteristics of devices having strained SiGe layers, realized on Si or Ge substrates, are computed. The transconductance g_m and unity-current gain cutoff frequency (f_T) are also computed as a function of the gate voltage V_G. The calculated values of f_T suggest the operation of one-dimensional SiGe MODFETs to be around 200 GHz range at 77°K, and 120 GHz at 300°K.     

1/<Emphasis Type="Italic">f</Emphasis> noise in metal insulator semiconductor transistors with different conductivity types and different topological dimensions of the channel

An experimental investigation of 1/f noise in metal insulator semiconductor transistors with different types of channel conductivity and different topological sizes of the gate region is presented. The transistors are produced on the basis of the standard 1.2-μm complementary metal oxide semiconductor technology and can be used as reading elements in 2D multielement detectors of infrared radiation. The level of 1/f noise is determined in relation with the channel conductivity type. It is shown that the p-channel transistors exhibit a lower level of 1/f noise compared to that of the n-channel transistors (by about one order of magnitude). The dependence of 1/f noise on the topological size of the gate region is obtained. The transistors with the smallest channel width are found to produce the highest noise level.     

Nonmonotonic behavior of magnetophotoconductivity in p-CdHgTe

Magnetophotoconductivity of p-Cd_xHg_1?x Te, measured in the Hall configuration with illumination along the magnetic field (k ∥ B ⊥ E), exhibits nonmonotonic behavior with magnetic field in the temperature range in which the material has a mixed conduction. The effect manifests itself as a peak at B ≠ 0; it is caused by a significant magnetoresistance associated with equilibrium charge carriers. The peak appears if the conductivity of equilibrium electrons is greater than or equal to half the conductivity of equilibrium heavy holes; in Cd _x Hg_1?x Te with x = 0.22, this condition is satisfied at temperatures of 140–150 K.     

Fundamental spectra of optical functions for indium bromide in the energy range of 2–30 eV at 4.2 K

The spectra of sets of optical fundamental functions are determined for an indium-bromide crystal in the range of 0–30 eV at 4.2 K for the polarizations E ∥ a and E ∥ c. The calculations are carried out using experimental reflection spectra R(E) and several software packages. Their basic features are established.     

Relationship between HOMO energy level and open circuit voltage of polymer solar cells

A series of π-conjugated polymers (PDHF-BT and PDHF-TBT) with 4-(3,4-ethylenedioxythienyl)-2,1,3-benzothiadiazole (BT), 4,7-bis(3,4-ethylenedioxythienyl)-2,1,3-benzothiadiazole (TBT), and 9,9′-dihexylfluorene were synthesized by the Suzuki coupling reaction. The HOMO energy level of PDHF-BT was −5.47 eV, which was lower than that of PDHF-TBT (−5.22 eV), while the LUMO energy level of PDHF-BT (−3.45 eV) was very similar to that of PDHF-TBT (−3.42 eV). These energy levels of PDHF-BT and PDHF-TBT were also supported by a DFT calculation. The power conversion efficiency (PCE) of the polymer solar cell (PSC) with a structure of ITO/PEDOT:PSS/PDHF-BT:PCBM (1:1)/Al was determined as 0.34% and it was larger than that of the device based on PDHF-TBT (0.22%). Correspondingly, the V_oc of the PSC based on PDHF-BT (0.71 V) was much larger than that of the device based on PDHF-TBT (0.40 V). The results support that the V_oc of polymer based PSCs is strongly related to the HOMO energy level of the active polymers.