纳米硅-氧化硅薄膜的XPS测量

利用XPS能很好地分辨出硅基纳米硅-氧化硅膜层中的n-Si和n-SiO2。对Si2P峰进行的拟合处理，可计算出n-Si和n-SiO2的含量，其结果与RF-磁控溅射沉积薄膜中所用的复合靶Si和SiO2的面积比基本一致。     

Characterization of lead zirconate titanate--lanthanum ruthenate thin film structures prepared by chemical solution deposition

In this work, the results of compositional and microstructural analysis of lead zirconate titanate--lanthanum ruthenate thin film structures prepared by chemical solution deposition are discussed. The cross-section transmission electron microscope (TEM) micrographs of the La-Ru-O film deposited on a SiO2/Si substrate and annealed at 700 degrees C revealed RuO2 crystals embedded in a glassy silicate matrix. When the La-Ru-O film was deposited on a Pt/TiO2/SiO2/Si substrate, RuO2 and La4Ru6O19 crystallized after annealing at 700 degrees C. After firing at 550 degrees C randomly oriented lead zirconate titanate (PZT) thin films crystallized on the La-Ru-O/SiO2/Si substrate, while on La-Ru-O/Pt/TiO2/SiO2/Si substrates PZT thin films with (111) preferred orientation were obtained. No diffusion of the Ru atoms in the PZT film was found. Ferroelectric response of PZT thin films on these substrates is shown in comparison with the PZT film deposited directly on the Pt/TiO2/SiO2/Si substrate without a La-Ru-O layer.     

靶功率对射频磁控溅射制备MoS_2-Sb_2O_3复合薄膜结构和性能的影响

采用射频磁控溅射技术制备MoS2-Sb2O3复合薄膜,研究靶功率对薄膜性能和结构的影响。利用XRD、XRF分析薄膜的成分和结构,用CSM薄膜综合性能仪测试薄膜的硬度及附着力,通过承载力试验测试薄膜的承载性能,使用真空球-盘摩擦试验机测试真空和大气下薄膜的摩擦因数及耐磨寿命。结果表明:使用射频磁控溅射制备的MoS2-Sb2O3复合薄膜具有准非晶结构,其薄膜结构和成分受沉积时的靶功率影响;MoS2-Sb2O3复合薄膜在真空下具有比大气下更稳定的摩擦学性能,更长的耐磨寿命;提高溅射原子能量能有效地提高MoS2-Sb2O3复合薄膜的承载性能,减少薄膜的内应力,提高薄膜的附着力,提高薄膜的耐磨寿命。     

陶瓷-玻璃-单晶硅的阳极键合工艺性研究

首先采用射频磁控溅射法在ZrO2陶瓷基体上沉积一层钠硼硅酸盐玻璃，并通过该钠硼硅酸盐玻璃薄膜作为中间层利用阳极键合方法实现了ZrO2陶瓷与单晶硅的间接连接。     

射频磁控溅射法制备类金刚石薄膜的研究

采用射频磁控溅射法,纯Ar溅射石墨靶,制备出了类金刚石薄膜,并对薄膜沉积速率随各工艺参数的变化规律、薄膜结构以及光学性能进行了系统的研究。结果表明,沉积速率随射频功率、CH4流量和溅射气压的增大而增大;随温度的增大呈现先增大后小的趋势。结构分析发现,所制备的DLC薄膜是由sp2键镶嵌在sp3键基体中构成的。在3μm~5μm波段对Si衬底有明显的增透效果。     

基于薄膜退火的MoS_2/SiO_2/Si异质结太阳能电池光伏性能提高

为了制备高效的MoSi/SiO_2/Si异质结太阳能电池,利用磁控溅射技术制备MoS_2薄膜,并在硫气氛下对MoS_2薄膜进行退火处理。分别用退火和未退火的MoS_2薄膜制备MoS_2/SiO_2/Si异质结太阳能电池,研究了退火对MoS_2薄膜的微观结构和MoS_2/SiO_2/Si异质结太阳能电池光电性能的影响。实验结果显示,相比于未退火的,经过退火处理的MoS_2薄膜的拉曼峰半高宽(FWHM)变窄,峰强增强,显微荧光光谱中也出现明显的激子发光峰。由此表明,退火处理使MoS_2薄膜由非晶向晶态转变,薄膜的体缺陷减少,异质结太阳能电池的开路电压和填充因子得到提升,器件转换效率从0.94%提高到1.66%。不同光照强度下的J-V测量和暗态的J-V测量结果表明,经退火处理的MoS_2薄膜的异质结太阳能电池具有较高的收集电压和更接近于1的理想因子,这归因于退火导致MoS_2薄膜的体缺陷的减少,近而降低了MoS_2/SiO_2/Si异质结太阳能电池器件的体缺陷复合。     

射频／直流磁控溅射不锈钢／Al2O3复合薄膜组织与性能研究

利用射频/直流碳控溅射法,制备了316L不锈钢/Al2O3陶瓷复合薄膜,研究了316L不锈钢/Al2O3陶瓷复合膜的组织形貌。测试了薄膜的显微硬度和耐磨性。结果表明：直流磁控溅射316L不锈钢薄膜呈柱状晶结构,主要有Fe-Cr和γ-Fe相构成,在Fe-Cr(110)晶面出现明显的择优取向,由于射频溅赈射Al2O3陶瓷的掺合,使316L不锈钢/Al2O3陶瓷复合薄膜柱状晶细化,并出现二次柱状晶,在Fe-Cr（211）晶面出现明显的掺优取向, 316L不锈钢膜硬度明显高于316L块体,掺合了Al2O3的金属/陶瓷复合薄膜耐磨性有显著的提高。     

射频磁控反应溅射法制备Y2O3薄膜的工艺研究

采用射频磁控反应溅射法制备氧化钇(Y2O3)薄膜。系统研究了工艺参数对Y2O3薄膜沉积速率的影响规律,使用X射线光电子能谱仪(XPS)分析表征了薄膜的成分。结果表明,Y2O3薄膜的沉积速率随射频功率的增大而增大,在合适的溅射压强下沉积速率呈现极大值,O2/Ar气体流量比和衬底温度的影响不明显,对此从理论上进行了解释。制备的薄膜中Y和O元素的原子浓度基本符合Y2O3的化学计量比。     

静电辅助气溶胶化学气相沉积法制备Al_2O_3薄膜

以乙酰丙酮铝为前驱体,N,N-二甲基甲酰胺为溶剂,采用静电辅助的气溶胶化学气相沉积(ESAVD)方法,在Si(100)衬底上制备了Al2O3薄膜,并采用场发射扫描电镜、能谱仪、X射线衍射仪和自动划痕仪等设备对制备的薄膜进行了表征。结果表明:采用ESAVD法制备的Al2O3薄膜平整致密而且晶粒细小,薄膜与基体之间及薄膜内部都未出现开裂现象;薄膜与基体的结合力约为5.56 N;沉积得到的薄膜为化学计量比为2∶3的氧化物薄膜;退火前的薄膜为非晶态,在1 200℃退火保温2 h后薄膜转变为-αAl2O3。     

光纤持气率测井仪响应规律的实验研究

为考察现有光纤持气率计在油气水三相流中的响应特性,采用多相流标定装置对其进行测定,系统研究光纤持气率计在油量固定不变含水量不同条件下的持气率响应规律。实验结果表明,当油量为5m3/d、气量小于10m3/d时,持气率随含气量的增大而增大,二者线性变化程度较低;而气量在10～35m3/d之间变化时,持气率随含气量的增大而线性增大。     

锑掺杂纳米SnO2透明导电薄膜的制备与性能研究

采用溶胶-凝胶法在Si片、已镀SiO2的钠钙硅玻璃和普通钠钙硅玻璃上镀Sb掺杂摩尔分数为8%的SnO2薄膜(ATO),在450℃热处理温度下对薄膜结构,电学、光学性能进行表征。结果表明:薄膜以四方金红石结构存在,结晶完全;方阻值随镀膜层数的增加而明显降低,12层时薄膜最低方阻值为129Ω/□,可见光平均透过率在75%以上。随着波长的增大,红外波段的反射率逐渐增大,从15%增加到55%左右。     

Surface performances of PVD ZrN coatings in biological environments

Zirconium nitride (ZrN) thin films were deposited by reactive RF magnetron sputtering on Ti-6Al-4V and Si (100) substrates for potential use in biomedical applications. The tribological behaviour was evaluated against bovine bone in dry condition using a pin-on-disc apparatus. Abrasion is the primary wear mechanism observed in ZrN/bone contact. The corrosion properties were determined through two electrochemical techniques: potentiodynamic polarization and electrochemical impedance spectroscopy. The coatings with reduced oxygen content provided: (i) good resistance against corrosion when exposed to physiological solution and (ii) better anti-bioadhesion against Staphylococcus aureus bacteria.     

Influence of substrate orientation on the morphologyand orientation of LaNiO3 thin films

LaNiO₃ thin films were successfully prepared by a chemical method from citrate precursors. The LNO precursor solution was spin‐coated onto Si (100) and Si (111) substrates. To obtain epitaxial or highly oriented films, the deposited layers were slowly heated in a gradient thermal field, with a heating rate of 1° min^?1, and annealed at 700°C. The influence of different substrate orientations on the thin film morphology was investigated using atomic force microscopy and X‐ray diffraction analysis. Well‐crystallized films with grains aligned along a certain direction were obtained on both substrates. Films deposited on both substrates were very smooth, but with a different grain size and shape depending on the crystal orientation. Films deposited on Si (100) grew in the (110) direction and had elongated grains, whereas those on Si (111) grew in the (211) direction and had a quasi‐square grain shape.     

氩气与氮气流量比对磁控溅射法制备TiN薄膜的影响

用直流反应磁控溅射法在Si(100)基底上制备了TiN薄膜,采用X射线衍射仪和原子力显微镜对其结构和形貌进行了表征,利用四探针测试仪测量了TiN薄膜的方块电阻,使用紫外可见分光光度计测定了薄膜反射率;研究了溅射沉积过程中氩气与氮气流量比对TiN薄膜结构及性能的影响.结果表明:在不同氩气与氮气流量比下,所制备薄膜的主要组成相是(200)择优取向的立方相TiN;随着氩气与氮气流量比的增加,薄膜厚度逐渐增大,而表面粗糙度与电阻率先减小后增大;当氩气与氮气流量比为15:1时,薄膜表面粗糙度和电阻率均达到最小值;TiN薄膜的反射率与氩气与氮气流量比的关系不大.     

磁控溅射法制备的五氧化二钒薄膜光电特性

利用射频磁控溅射方法,选取溅射时间为15,25,30和45min,在蓝宝石衬底上沉积了V2O5薄膜。研究了其他实验参量不变,溅射时间不同对薄膜结构、薄膜厚度、表面形貌、电学及光学性能的影响。实验结果表明,制备出的薄膜为单一组分的V2O5薄膜,其在(001)面有明显的择优取向。随着溅身时间的增加,结晶性能逐渐变强,晶粒尺寸也逐渐变大,而表面粗糙度值会逐渐降低;在晶体结构完整的基础上,随着溅射时间的增加,相变温度和经历的温度范围会逐渐增加,电学突变性能会降低。测试了薄膜在中红外波段的高低温透过率,结果显示:当膜厚为350nm,波长为5μm时,薄膜的透过率从25℃时的81%变为300℃的7%,变化幅度可达74%;所有薄膜相变前后透过率的比值均为9~13,表现出了非常突出的光学开关特性。     

Fractal features of carbon–nickel composite thin films

This work analyses the three‐dimensional (3‐D) surface texture of carbon–nickel (C–Ni) films grown by radio frequency (RF) magnetron co‐sputtering on glass substrates. The C–Ni thin films were deposited under different deposition times, from 50 to 600 s, at room temperature. Atomic force microscopy was employed to characterize the 3‐D surface texture data in connection with the statistical, and fractal analyses. It has been found that up to 180 s the sputtering occurs in more metal content mode and in greater than 180 s it occurs in more non‐metal content mode. This behavior demonstrated a strong link between the structural and morphological properties of C–Ni composite films and facilitates a deeper understanding of structure/property relationships and surface defects in prepared samples. Furthermore, these findings can be applied to research on the mechanisms to prepare and control high‐quality C–Ni films.     

Surface characteristics and tribology study of metal oxide thin films

Abstract

Microcrystalline high quality undoped ZnO thin films were deposited on Si(100) and Corning 1737F glass substrates by a dc magnetron sputtering system. Surface and mechanical properties of ZnO thin films deposited under different deposition conditions (thickness, deposition rate and plasma composition) were investigated. Atomic force microscopy, nanoindentation techniques and scratch tests have been carried out. The lateral grain radius was between 50 and 160 nm. Surface roughness was found to vary from 1·3 to 10·3. In order to measure the real hardness of ZnO thin films grown on Si(100) and glass Continuous Stiffness Measurement technique was used. The hardness was found to be between 11 and 13 GPa for the polycrystalline ZnO almost five times larger than for the corresponding single crystalline material, while scratch tests verified a film structure, thickness, and surface morphology dependency on the mechanical properties for these metal oxide thin films.     

Humidity response properties of a potentiometric sensor using LaF3 thin film as the solid electrolyte

A thin-film type potentiometric sensor has been prepared by the implementation of electro-beam evaporation, rf magnetron sputtering methods, and micromachining processes. Sn film was deposited on n-Si/SiO(2) (400 nm) substrate. A deposited LaF(3) film was applied as solid electrolyte and sputtered Pt film was used as the sensing electrode. The patterns of the Pt and LaF(3) were realized by the micromachining processes. The LaF(3) film was characterized by scanning electron microscopy and energy dispersive x ray. Saturated aqueous solutions were used to achieve controlled humidity environments. When the sensor was exposed to humidity environments, the electromotive force (EMF) of the sensor was examined. It was found that the sensor varies with the relative humidity (RH). The stable response curve was presented and non-Nernst behavior between the average EMF values and RH may be shown.     

射频磁控溅射法制备二硫化钼薄膜

用射频磁控溅射法在GCr15钢表面制得了MoS2薄膜。通过扫描电镜、摩擦磨损以及划痕试验仪研究了工艺参数对薄膜形貌和性能的影响。结果表明:采用射频溅射法,在功率200W、工作气压3Pa、时间2h条件下制备的MoS2薄膜性能最佳;沉积过程中沉积原子从衬底表面获得足够的扩散能量时薄膜按层状模式生长,扩散能量不足时薄膜按层岛复合模式生长;MoS2薄膜摩擦因数低,具有优良的摩擦学特性。     

溅射气压和衬底温度对Si1-xGex薄膜结构和光吸收性能的影响

采用射频磁控溅射法沉积了Si1-xGex薄膜,研究了溅射气压、衬底温度对薄膜结构、厚度、表面形貌、表面成分及光吸收性能的影响。结果表明:薄膜均为微晶结构且相组成不随溅射气压和衬底温度的改变而改变;随着溅射气压升高,薄膜结晶性能降低,升高衬底温度使其结晶性能提高;随气压或温度的升高,薄膜厚度均先增大后减小,在1.0Pa或400℃达到最大值;随温度的升高,薄膜表面团簇现象消失并变得平整致密,气压为8.0Pa时,表面有孔洞和沟道;随气压升高,薄膜中锗含量降低,光吸收强度减小,光学带隙增大;衬底温度的变化对光学带隙影响不大。