Propagation characteristics of MIS transmission lines withinhomogeneous doping profile

The authors present a hybrid-mode analysis of slow-wave MIS (metal-insulator-semiconductor) transmission lines with a gradually inhomogeneous doping profile. In general it was found that, in comparison with homogeneously doped semiconductor layers, a Gaussian-type doping distribution results in lower losses for the slow-wave mode in both thin- and thick-film MIS CPWs. While the effect of the doping profile is more pronounced in thin-film structures which support a slow-wave mode only up to 3 GHz, it is less significant in thick-film structures. On the other hand, numerical analysis indicates that thick-film structures can support a slow-wave mode at moderate loss up to 40 GHz. The behavior of MIS microstrip lines is similar to that of MIS CPWs, except that for thick-film transmission lines an increase in losses can be observed when the doping profile becomes inhomogeneous. The numerical investigation was carried out using the method of lines. Several transmission lines have been investigated, and results are presented for microstrip, coupled microstrips, and coplanar lines     

Embedded microstrip interconnection lines for gigahertz digitalcircuits

Transmission line structures are needed for the high-performance interconnection lines of GHz integrated circuits (ICs) and multichip modules (MCMs), to minimize undesired electromagnetic wave phenomena and, therefore, to maximize the transmission bandwidth of the interconnection lines. In addition, correct and simple models of the interconnection lines are required for the efficient design and analysis of the circuits containing the interconnection lines. In this paper, we present electrical comparisons of three transmission line structures: conventional metal-insulator-semiconductor (MIS) and the embedded microstrip structures-embedded microstrip (EM) and inverted embedded microstrip (IEM). In addition, we propose closed-form expressions for the embedded microstrip structures EM and IEM and validate the expressions by comparing with empirical results based on S-parameter measurements and subsequent microwave network analysis. Test devices were fabricated using a 1-poly and 3-metal 0.6 μm Si process. The test devices contained the conventional MIS and the two embedded microstrip structures of different sizes. The embedded microstrip structures were shown to carry GHz digital signals with less loss and less dispersion than the conventional MIS line structures. S-parameter measurements of the test devices showed that the embedded microstrip structures could support the quasi-TEM mode propagation at frequencies above 2 GHz. On the other hand, the conventional MIS structure showed slow-wave mode propagation up to 20 GHz. More than 3-dB/mm difference of signal attenuation was observed between the embedded microstrip structures and the conventional MIS structure at 20 GHz. Finally, analytical RLCG transmission line models were developed and shown to agree well with the empirical models deduced from S-parameter measurements     

New prospective coplanar metal-insulator-semiconductor (MIS)monolithic structure

Research work on various MIS transmission lines is well documented. Useful slow-wave propagation with low loss is always exhibited in recently proposed lower frequency ranges (several GHz). The author is concerned with the essential properties of the micrometre-size coplanar MIS lines. A new loss-reducing monolithic MIS is proposed with reference to physical considerations to ensure a low-cost mechanism     

Time-domain response of MIS coplanar waveguides for MMICs

An MIS coplanar waveguide propagating a slow-wave mode has been characterised in the time domain. The theoretical analysis proposed to obtain the time-domain response of the line gives results in good agreement with measurements. The circuit analysis used is suitable for the determination of spurious propagation effects, inherent to the use of miniature waveguides encountered in MMICs, such as Schottky contact coplanar lines and coupled microstrip lines laid on MIS substrates.     

Application of Maxwell-Wagner polarization in delay lines

The propagation characteristics of metal-insulator-semiconductor (MIS) lines are controlled by the resistivity of the substrate, the operating frequency and the ratio of the semiconductor to insulator layer thicknesses. A strong interfacial polarisation, also known as the Maxwell-Wagner polarisation, is often responsible for the significant slow-down of the propagation velocity of MIS microstrip transmission lines. This phenomenon has been applied in the development of miniature delay lines exhibiting large electrical dimensions. In this paper we review most previously presented designs and we examine the effect of this polarization mechanism under various parameters. Finally, the presented micro-scale delay lines, exhibit comparable slowing factors with our predecessors at the cost of lower attenuation.     

Low-loss slow-wave propagation along a microstructure transmission line on a silicon surface

We report observations of relatively low-loss propagation in the frequency range of 1.0 to 12.4 GHz using a micrometer-size coplanar MIS transmission line fabricated on a heavily doped N + silicon surface. This low-loss mode of propagation is found to be accompanied by significant wavelength reduction which suggests that such lines may be useful as transmission media for distributed components in silicon monolithic microwave integrated circuits (MMICs).     

一种面向MIS的数据库管理原型系统的设计方案

分析了管理信息系统(MIS)的数据特点并提出了一种面向MIS的数据模型,给出了在关系数据库管理系统(RDBMS)的基础上实现MIS数据模型的主要思路,设计了一个面向MIS的数据库管理原型系统。     

Surface damage caused by electron-beam metallization of high open-circuit voltage solar cells

Metallization of high open-circuit voltage metal-insulator n-type-p-type(MINP)solar cells using an electron-beam deposition apparatus has been observed to cause degradation of device performance. Investigations using metal-insulator-semiconductor (MIS) diodes as test devices showed that the damage is consistent with a massive increase in surface-state density, and may be due to both radiation and the impact of charged particles. The damage can be eliminated by resistive evaporation of 100 nm of metal prior to use of the electron beam. It is likely that use of an electron beam to deposit grid lines and antireflection coatings on any high open-circuit voltage solar cell will lead to irreversible degradation in performance.     

Hybrid-mode analysis of homogeneously and inhomogeneously dopedlow-loss slow-wave coplanar transmission lines

A hybrid-mode analysis is presented to characterize the propagation properties of uniplanar slow-wave MIS (metal-insulator-semiconductor) coplanar transmission lines. The effect of homogeneous versus gradually inhomogeneous doping profile is investigated as well as the influence of the metal conductor losses and finite metallization thickness on the slow-wave factor and the overall losses. Numerical results indicate that thick-film MIS CPWs can support a slow-wave mode with moderate loss up to 40 GHz when the line dimensions are kept in the micrometer range. Furthermore, it is found that an inhomogeneous doping profile can reduce the overall losses and that the effect of metal conductor losses in heavily doped MIS structures is only marginal. On the other hand, in weakly doped or insulating GaAs material a lossy metal conductor leads to a higher propagation constant, exhibiting a negative slope with increasing frequency     

Invited paper Characteristics of travelling waves along the non-linear transmission lines for monolithic integrated circuits: a review

A general analysis of non-linear wave propagation along transmission lines with voltage-dependent capacitance is presented. In particular, slow-wave structures like MIS and Schottky-barrier strip lines are examined. A spatial periodicity is included explicitly. The theoretical treatment is based on suitable equivalent circuits leading to characteristic wave equations. With regard to practical devices, the solutions show a variety of different phenomena as determined by the parameters of the non-linearity, dispersion and dissipation and the boundary conditions. Experimental results performed on a slow-wave model line are included.     

出版管理信息系统的研究与设计

通过对出版计算机综合管理信息系统的分析与研究，采用客户/服务器模式的信息系统结构，建立了以网络为中心的计算机环境，利用构建数据库应用系统的最新技术即客户端的数据库应用开发工具PowerBuilder等，开发出功能强、运行可靠的出版管理信息系统。     

田径运动会信息管理系统的开发与应用

针对计算机在田径运动会使用和发展落后的现状，文章对田径运动会信息管理的需求进行了分析．并提出手工管理存在的问题，以及开发田径运动会信息管理系统的目标和静态模型．详细论述了系统体系结构和功能，同时讨论了系统的特点和不足，并提出了改进意见。     

Applications of micromechatronics in minimally invasive surgery

Many surgical procedures are now performed using the techniques of minimally invasive surgery (MIS), in which unnecessary trauma is limited by reducing the size of incisions to less than about 1 cm or by using catheters or endoscopes threaded through vessels, the gastrointestinal tract, or other tubular structures. Micromechatronic technologies have great potential to allow access to regions now inaccessible, or to enhance the surgeon's abilities in applications where current minimally invasive techniques do not permit the full range of human dexterity and perception. Key needs and applications in MIS are identified, and relevant technologies, methods, and systems issues in mechatronics are discussed. The authors' millirobotic system for MIS of the abdomen is used as an example     

Metalorganic chemical vapor deposition- grown AIN on 6H-SiC for metal-insulator-semiconductor device applications

Aluminum nitride is a promising insulator for the fabrication of 6H-silicon carbide (6H-SiC) metal-insulator-semiconductor (MIS) devices for high temperature and high power applications. Due to the fact that the electrical response of a Au/AlN/SiC MIS structure is sensitive to the quality of the insulator-semiconductor interface as well as the insulator itself, growth of AlN on 6H-SiC using different growth procedures will produce AlN/6H-SiC structures of different electrical characteristics. In this study, we compared the capacitance-voltage, dc current voltage and high electric field breakdown characteristics of various AlN/6H-SiC MIS structures grown by different low-pressure metalorganic chemical vapor deposition growth procedures. Our results demonstrated that depending on the growth procedure, Au/AlN/SiC MIS structures with low current leakage, low interface state density, good high temperature stability and high electric field breakdown voltage could be obtained.     

Characterization of MIS structure coplanar transmission lines forinvestigation of signal propagation in integrated circuits

A full-wave analysis of metal-insulator-semiconductor (MIS) structure micron coplanar transmission lines on doped semiconductor substrates is carried out using a finite-difference time-domain approach. Metal conductor loss is taken into account in the analysis. Line parameters and electromagnetic field distributions are calculated over a wide frequency range involving slow-wave and dielectric quasi-transverse-electromagnetic mode limits. Measurements of these line parameters, varying substrate resistivity from 1 to 1000 Ω-cm, in the frequency range up to 40 GHz are also presented, and these agree with the analysis quite well. On the basis of these results, an equivalent circuit line model is induced and some considerations on the relationship between line structure and properties made     

Analysis of printed transmission lines for monolithic integrated circuits

Planar transmission lines formed with MIS and Schottky barrier contacts are analysed based on the spectral domain technique. Depending on the frequency and the resistivity of the substrates, three different types of fundamental modes are predicted. The calculated slow-wave factors and attenuation constants agree well with experimental results.     

Properties of spin-on glass as an insulator for InP metal-insulator-semiconductor structures

The application of Futurrex IC1-200 spin-on glass as an insulator for InP metal-insu-lator-semiconductor (MIS) structures including InP MIS capacitors and InP MIS field-effect transistors (MISFET’s) was investigated. Preliminary measurements of the elec-trical properties of the spin-on glass were performed using Si MIS structures with the spin-on glass insulator layer. It was found that the spin-on glass which is subjected to a final curing treatment utilizing a rapid-thermal annealing at 600° C for 5 sec in a O₂ ambient exhibits the best electrical properties. However, it was demonstrated by sec-ondary ion mass spectroscopy that when done on InP, the 600° C rapid-thermal an-nealing resulted in the outdiffusion of indium and phosphorus into the spin-on glass. The change in the spin-on glass electrical characteristics due to this outdiffusion re-sulted in an instability in the InP MISFET operation.     

Stable InP MIS device using silicon nitride/anodic oxidedouble-layer dielectric

MIS devices are fabricated on InP using a double-layer dielectric consisting of anodic oxide and PECVD silicon nitride. Two different sets of experiments are conducted using tartaric acid and oxalic acid based AGW electrolyte solutions respectively for growing the anodic oxide layer. Devices having the oxalic acid grown anodic oxide layer exhibit capacitance-voltage (C-V) characteristics close to the ideal and are stable for 7200 s under applied bias conditions. The stability of MIS devices is evaluated by determining the accumulation layer charge density versus time     

Recent progress in MIS solar cells

Metal–insulator–semiconductor (MIS)-type solar cells have an inherent cost advantage compared to p-n junction solar cells. First-generation MIS–inversion layer (MIS–IL) solar cells, already successfully produced in an industrial pilot line, are restricted to efficiencies of 15–16%. With the second-generation MIS–IL silicon solar cells, based on drastically improved surface passivation by plasma-enhanced chemical vapour-deposited silicon nitride, simple technology can be combined with very high efficiencies. The novel inversion layer emitters have the potential to outperform conventional phosphorus-diffused emitters of Si solar cells. A 17.1% efficiency could already be achieved with the novel point-contacted ‘truncated pyramid’ MIS–IL cell. A new surface-grooved line-contact MIS–IL device presently under development using unconventional processing steps applicable for large-scale fabrication is discussed. By the mechanical grooving technique, contact widths down to 2 μm can be achieved homogeneously over large wafer areas. Bifacial sensitivity is included in most of the MIS-type solar cells. For a bifacial 98 cm² Czochralski (Cz) Si MIS-contacted p-n junction solar cell with a random pyramid surface texture and Al as grid metal, efficiencies of 16.5% for front and 13.8% for rear side illumination are reported. A 19.5% efficiency has been obtained with a mechanically grooved MIS n⁺p solar cell. The MIS-type silicon solar cells are able to significantly lower the costs for solar electricity due to the simple technology and the potential for efficiencies well above 20%.©1997 John Wiley & Sons, Ltd.     

Metal–Insulator–Semiconductor Coaxial Microfibers Based on Self‐Organization of Organic Semiconductor:Polymer Blend for Weavable,Fibriform Organic Field‐Effect Transistors

With the increasing importance of electronic textiles as an ideal platform for wearable electronic devices, requirements for the development of functional electronic fibers with multilayered structures are increasing. In this paper, metal–polymer insulator–organic semiconductor (MIS) coaxial microfibers using the self‐organization of organic semiconductor:insulating polymer blends for weavable, fibriform organic field‐effect transistors (FETs) are demonstrated. A holistic process for MIS coaxial microfiber fabrication, including surface modification of gold microfiber thin‐film coating on the microfiber using a die‐coating system, and the self‐organization of organic semiconductor–insulator polymer blend is presented. Vertical phase‐separation of the organic semiconductor:insulating polymer blend film wrapping the metal microfibers provides a coaxial bilayer structure of gate dielectric (inside) and organic semiconductor (outside) with intimate interfacial contact. It is determined that the fibriform FETs based on MIS coaxial microfiber exhibit good charge carrier mobilities that approach the values of typical devices with planar substrate. It additionally exhibits electrical property uniformity over the entire fiber surface and improved bending durability. Fibriform organic FET embedded in a textile is demonstrated by weaving MIS coaxial microfibers with cotton and conducting threads, which verifies the feasibility of MIS coaxial microfiber for use in electronic textile applications.