高性能InAs/GaAs量子点外腔激光器

为了获得高性能的量子点外腔激光器(ECL),利用InAs/GaAs量子点Fabry-Perot(FP)腔激光器研制了光栅外腔可调谐ECL。对InAs/GaAs量子点ECL进行了一系列的性能测试,主要包括单模稳定性测试、单模调谐范围测试、阈值电流密度测试、无跳模连续调谐测试和输出功率测试。在室温条件下获得了24.6nm的连续调谐范围,覆盖波长从999.2nm到1 023.8nm,并且实现了波长无跳模连续调谐。在调谐范围内最低阈值电流密度为1 525A/cm2,而且在中心波长处获得的单模输出功率为15mW,单模边模抑制比(SMSR)高达35dB。研究结果表明,通过构建光栅外腔可以实现高性能的InAs/GaAs量子点ECL。     

大范围连续调谐的InAs/InP(100)外腔量子点激光器

实现了一种工作在连续波(CW)模式下InAs/InP(100)外腔量子点激 光器(EC-QDL)。激光器采用小型化的Littrow 外腔结构,中心波长为1.6μm且输出光方向固定。在室温条件下, 对InAs/InP(100)量子点外腔激光器进行 了一系列性能测试。实验结果表明,器件的单模大范围波长调谐达56.5nm,覆盖波长从1566.9623.4 nm,获得30 GHz的无跳模连续调谐范围,在中心波长1.6μm附近单 模输出功率达8mW,并 在无跳模连续调谐范围内获得了30dB以上的边模抑制比(SMSR)。     

中红外可调谐量子级联激光器研究进展

量子级联激光器(QCL)是中红外波段重要的激光光源,其中,可调谐中红外量子级联激光器具有单纵模、频率可调谐的优点,成为目前研究的热点。可调谐中红外量子级联激光器主要通过分布反馈(DFB)光栅、分布布拉格反射(DBR)光栅、外腔衍射光栅等方法实现。本文介绍了中红外量子级联激光器的基本原理,分别归纳、总结了近年来DFB、DBR可调谐量子级联激光器以及外腔可调谐量子级联激光器的研究进展,讨论了各种可调谐方法的优缺点。最后,对可调谐量子级联激光器的发展趋势进行了展望。     

一种波长稳定可调的窄线宽外腔二极管激光器

采用横向啁啾体布拉格光栅作为二极管激光器的外腔,实现一种简单易行的窄谱线宽、波长稳定且连续可调谐的外腔二极管激光器。实验研究了横向啁啾体布拉格光栅外腔二极管激光器的波长稳定性及谱宽压窄特性,分析了横向啁啾体布拉格光栅的波长调谐特性及其功率特性,研究表明,在横向啁啾体布拉格光栅外腔反馈的作用下,二极管激光器输出光谱的中心波长得到了锁定,同时输出谱线宽度显著变窄,通过横向移动啁啾体布拉格光栅的相对位置,可以实现外腔二极管激光器输出光谱的连续调谐,连续可调范围为800~815nm,在整个可调范围内谱的半峰全宽(FWHM)小于0.3nm,最大输出功率为2.01 W,输出功率偏移度小于1.5%。     

横向啁啾体布拉格光栅外腔二极管激光器光谱特性研究

采用光束传输法分析了横向啁啾体布拉格光栅的衍射特性,实验研究了横向啁啾体布拉格光栅外腔二极管激光器的功率特性、光谱特性和波长调谐特性,数值计算和实验结果表明:横向啁啾体布拉格光栅的峰值衍射效率随着入射光束在啁啾方向上尺寸的增大而降低,光谱选择宽度随着入射光束在啁啾方向上尺寸的增大而增大;当横向啁啾体布拉格光栅的啁啾方向与二极管激光器的快轴方向一致时,外腔二极管激光器的外腔效率为85%,在808.05 nm处的输出激光光谱宽度为0.27 nm;当横向啁啾体布拉格光栅的啁啾方向与二极管激光器的慢轴方向一致时,外腔二极管激光器的外腔效率为89%,在808.05 nm处的输出激光光谱宽度为0.3 nm,两种外腔激光器都较好地实现了约15 nm波长调谐范围,且在整个调谐范围内输出功率波动范围分别小于1%(快轴方向一致)与1.5%(慢轴方向一致)。     

双波长可调外腔半导体激光器

提出了一种基于体布拉格光栅（VBG）和横向啁啾体布拉格光栅（TCVBG）组合的双光栅外腔半导体激光器,该外腔半导体激光器采用反射率15%的体光栅和反射率17%的啁啾体布拉格光栅作为反馈元件和模式选择元件,实现特定波长的选择和调谐,实验研究了外腔激光器的功率-电流特性、光谱特性和波长调谐特性。实验结果表明:双光栅外腔半导体激光器最大输出功率为1.96 W,斜率效率为0.94 W/A,外腔效率达到78%。输出光谱为双波长,一个波长为808.6 nm,另一个波长连续可调,通过改变横向啁啾体光栅的位置,该波长可从800 nm调谐至815 nm,可调范围达15 nm,在整个可调范围内两个波长的谱线宽度（FWHM）均小于0.3 nm。     

基于光栅光阀可调谐半导体激光器外腔结构的设计研究

目的:提出利用光栅光阀(GLV)来精密调节光栅外腔半导体激光器输出波束的新方法。方法:这种基于光栅光阀的可调谐外腔半导体激光器的结构使光栅光阀与闪耀光栅形成了共焦结构,便于使被选择的波束可以原路返回,经过在谐振腔中振荡,最后输出。结果:这种基于光栅光阀结构的可调谐外腔半导体激光器可以任意控制输出或者被过滤掉的相应波束的数量。结论:利用光栅光阀的特性,这种可调谐外腔半导体激光器能有效地实现激光输出波束的精密调谐,同时也降低了调谐的机械难度。     

基于传输线激光器模型的调制光栅Y分支激光器仿真北大核心CSCD

调制光栅Y分支激光器(modulated grating Y branch laser,MGY)是光纤光栅解调系统的理想光源,目前鲜有针对其调谐特性的建模研究,为研究MGY的调谐特性,本文将传输线激光器模型(transmission line laser model,TLLM)推广到模拟MGY,采用TLLM、传输矩阵法(transfer matrix method,TMM)与数字滤波方法相结合的组合模型对模拟MGY进行研究。在组合模型中,对增益区和相位区使用基于时域的TLLM;对左、右调制光栅(left/right modulated grating,LMG/RMG)区先使用基于频域的TMM进行表征,然后通过反向傅里叶变换为时域模型,成功模拟了MGY的输出-电流特性曲线、静态调谐特性等,与已发表的实验结果相近。此综合方法可用于研究使用频域模型难以获得的器件的瞬态响应和激光光谱特性。     

激光二极管阵列的窄线宽、可调谐输出

外腔反馈的激光二极管阵列(LDA)可获得窄线宽、可调谐的光谱输出。外腔由快轴准直镜、准直光学系统和闪耀光栅组成。由于阵列中各发光单元的排列弯曲导致不同波长的光原路返回,引起谱线展宽,在输出光路中加入光谱滤波器,使激光二极管阵列的线宽进一步窄化。这样,激光二极管阵列的输出光谱由自由运转时的2 nm压缩到0.12 nm,在恒定温度23℃时,实现了激光在806～818 nm的调谐,调谐范围达12 nm。     

应力测量的光纤光栅调谐技术的研究

光纤光栅波长调谐在光纤传感领域中具有重要意义和实用价值。从理论上分析了基于悬臂梁的光纤光栅波长调谐的基本原理,阐述了等强度悬臂梁调谐技术及其特点。基于光谱分析仪0.1nm的光谱分辨率的测量,实验结果与理论分析一致。实验装置构形简单、成本低,有较好的线性,易于定标和操作。     

1.5mm腔长InAs/InP量子点激光器镜面外腔光谱特性研究

基于研制的1.5mm腔长InAs/InP共面条状量子点激光器,搭建了其镜面外腔结构,并对其光谱特性进行了测试,获得了镜面外腔周期性调制光谱,并在周期性的产生、多模激射和模式随电流的变化等方面对其光谱特性进行了分析研究。相比以前为获得单模使用的超短腔长超短外腔量子阱激光器,长腔长InAs/InP量子点激光器表现出较小的模式压缩比,更容易发生多模激射。     

Gain in injection lasers based on self-organized quantum dots

The analytical form of the dependence of the gain on pump current density for lasers with an active region based on self-organized quantum dots is derived in a simple theoretical model. The proposed model is shown to faithfully describe experimental data obtained for laser diodes based on InGaAs quantum dots in an AlGaAs/GaAs matrix, as well as InAs quantum dots in an InGaAs/InP matrix. The previously observed gain saturation and switching of the lasing from the ground state to an excited state of the quantum dots are studied. The influence of the density of quantum-dot arrays on the threshold characteristics of lasers based on them is examined on the basis of this model. Fiz. Tekh. Poluprovodn. 33, 215–223 (February 1999)     

Wavelength controlled InAs/InP quantum dots for telecom laser applications

This article reviews the recent progress in the growth and device applications of InAs/InP quantum dots (QDs) for telecom applications. Wavelength tuning of the metalorganic vapor-phase epitaxy grown single layer and stacked InAs QDs embedded in InGaAsP/InP (1 0 0) over the 1.55-μm region at room temperature (RT) is achieved using ultra-thin GaAs interlayers underneath the QDs. The GaAs interlayers, together with reduced growth temperature and V/III ratio, and extended growth interruption suppress As/P exchange to reduce the QD height in a controlled way. Device quality of the QDs is demonstrated by temperature-dependent photoluminescence (PL) measurements, revealing zero-dimensional carrier confinement and defect-free InAs QDs, and is highlighted by continuous-wave ground-state lasing at RT of narrow ridge-waveguide QD lasers, exhibiting a broad gain spectrum. Unpolarized PL from the cleaved side, important for realization of polarization insensitive semiconductor optical amplifiers, is obtained from closely stacked QDs due to vertical electronic coupling.     

Effect of active-region modulation doping on simultaneous ground-state and excited-state lasing in quantum-dot lasers

The lasing spectra and light-power characteristics of lasers based on InAs/InGaAs quantum dots with p-type modulation doping are studied over a broad range of pump currents. It is shown that p-type doping leads to a significant increase in the threshold current for the onset of lasing at the excited-state transition and makes it possible to attain higher output powers for lasing at the ground-state transition as compared to lasers with an undoped active region. An explanation for the observed features of two-level oscillation in quantum-dot lasers is suggested.     

基于分布反馈激光器布里渊散射的高精度光谱测量

实现了一种基于光纤中受激布里渊散射(SBS)效应 的高分辨率光谱测量技术。使用连续可调谐分布反馈(DFB) 激光器作为泵浦光,与待测信号光在单模光纤(SMF)中发生受激布里渊放大相互作用,由此 实现对待测光的高分 辨率光谱测量与分析。DFB激光器的波长扫描通过高精度温度调谐来实现。与相关报道 中使用的外腔 可调谐激光器对比,DFB激光器具有体积小、成本低的优势。同时在波长扫描过程中,对DFB 激光器的输出光进行自 拍频处理获得其实时扫描速率,以此校正激光器的实时扫描波长,提高测量准确度。实验 初步验证了本文高分辨率光谱测量技术的可行性,并获得了0.24pm 的光谱分辨率。     

光纤光栅电磁调谐技术的研究

提出了一种实用可行的控制光纤光栅波长的电磁调谐技术。实验表明 ,此调谐方法在 30 0mA电流下可达到 1 38nm的调谐范围 ,且具有较好的恢复性。可以应用于可动态配置全光分 /插复用器OADM系统中 ,也可用来对光纤光栅外腔激光器进行调谐和波长锁定 ,并可用于波长调制型传感器。     

Singlemode InAs/InP quantum dash distributed feedback lasers emitting in 1.9 μm range

Laterally coupled, complex distributed feedback lasers based on InAs/ InGaAs/InAlGaAs/InP quantum dash-in-a-well layers emitting in the 1.9 mum wavelength range were fabricated. Total CW powers above 25 mW at room temperature and sidemode suppression ratios of more than 35 dB are demonstrated, which makes the devices promising for gas sensing applications.     

InAs-based distributed feedback quantum cascade lasers

InAs/AlSb distributed feedback quantum cascade lasers are presented. The lasers can operate in the single frequency regime at 3.34-3.38 mum in the 0-100degC temperature range in pulse mode. The wavelength tuning rate of the lasers is 0.27 nm/K and continuous tuning range up to 10 nm can be achieved.     

Room temperature continuous-wave operation of buried ridge stripe lasers using InAs-InP (100) quantum dots as active core

Self-organized InAs quantum-dot (QD) lasers emitting at 1.5 /spl mu/m were grown by gas source molecular beam epitaxy on (100) InP substrates. Room temperature continuous-wave (CW) operation of QD-based buried ridge stripe lasers is reported. We investigated experimentally the relevant CW performances of as-cleaved InP-based QD lasers for telecom applications such as temperature properties (T/sub 0/=56 K), infinite length threshold current density (J/sub /spl infin///spl sim/150 A/cm/sup 2/ per QDs layer) and internal efficiency (0.37 W/A). Lasing in pulsed mode is observed for cavity length as short as 200 /spl mu/m with a threshold current of about 37 mA, demonstrating the high gain of the QD's active core. In addition, the Henry parameter of these InP-based QD lasers is experimentally determined using the Hakki-Paoli method (/spl alpha//sub H//spl sim/2.2).