基于DDS与PLL的C波段全相参雷达频综设计

提出了一种直接数字频率合成(DDS)与锁相环(PLL)相结合的全相参频率合成方案。运用HMC704控制压控振荡器(VCO)设计高性能锁相本振源,将AD9910在基带产生的线性调频(LFM)脉冲调制信号经二次变频搬移到C波段,改善了输出信号的相噪和杂散,降低了系统的复杂性。实现了低相噪,低杂散,窄步进的C波段全相参雷达频综。结果表明,该频综在C波段输出LFM信号的幅度大于10dBm,频率步进为1kHz,相位噪声优于-103dBc/Hz@1kHz,各项指标均满足实际工程要求。     

C波段小型化低相噪全相参频率综合器

提出了一种小型低相噪、低杂散的C波段全相参频率综合器设计方案。基带信号由DDS芯片产生,通过对环路滤波器和电路印制板的优化设计改善相噪和杂散性能,并与PLL输出的C波段点频信号进行上变频,得到所需信号。介绍了实现原理、相位噪声模型及设计方法。测试结果表明,在7.8GHz处,频综相位噪声≤-103dBc/Hz@100kHz,杂波抑制≤-61dBc。     

DDS激励PLL高性能频率合成器设计

为适用CDMA各类收发机的射频本振的应用要求,研制了一种低杂散低相噪高分辨率的P波段频率合成器。利用DDS输出信号具有高分辨率和PLL具有窄带跟踪滤波特性,通过有效的频率规划和参数配置,规避了DDS由于相位截断近端杂散无法消除的缺陷,有效抑制了DDS中DAC非线性和幅度量化误差引起的宽带杂散。通过仿真分析了方案的可行性,设计了样品并进行了测试。结果显示,所设计的频率合成器输出频率范围为755～765MHz,频率分辨率为100.5 kHz,杂散优于-71 dBc,相位噪声优于-105 dBc/Hz@1 kHz。     

基于DDS激励PLL宽带低杂散频率合成器

在微波频段,为了实现小步进、低相噪的宽带频率合成器,常采用直接数字合成(DDS)激励锁相环(PLL)的方式,但要同时实现低杂散(特别是近端杂散)则相对困难。本文基于 DDS 低杂散技术进行了研究,并介绍一种改进的基于 DDS激励 PLL技术实现的宽带频率合成器,可有效改善杂散抑制指标。设计所得到频率合成器频率范围为4 GHz~8 GHz,步进为100 kHz,杂散抑制指标可以满足全频段≤-70 dBc。     

Ku频段低相噪捷变频频率综合器设计

介绍了一种Ku频段低相噪捷变频频率综合器设计方法。对接收本振源和发射激励源采用一体化设计,由于采用DDS PLL的方式,使此频率综合器在Ku频段上相噪优于-90dBc/Hz@1kHz,跳频时间小于10μs,激励源在Ku频段输出线性调频信号。     

2.4 GHz载频FMCW信号发生器的设计与实现

随着FMCW雷达的应用领域越来越广泛,对于FMCW信号发生器的性能要求也越来越高。采用了DDS激励PLL的混合式频率合成技术对合成器相位噪声、杂散损耗和线性度等性能指标进行分析,在此基础上设计并实现了2.4 GHz载频FMCW信号发生器。其中DDS芯片AD9910产生低频段的线性调频信号,PLL芯片HMC820LP6CE通过倍频将低频段调频信号倍频到高频段,STM32为控制器。实测结果表明,该系统具有频率分辨率高、相噪低、杂散损耗小、捷变频时间短、线性度高的特点。其近端杂散为-59.64 d Bc,远端杂散为-55.02 d Bc,相位噪声在100 k Hz处为-95.57 d Bc/Hz,在400 k Hz处为-118.38 d Bc/Hz。     

一种L波段的小步进频率合成器

详细分析了直接数字合成(DDS)和锁相环(PLL)的基本原理、特点及相位噪声特性。将DDS与PLL技术结合,取长补短,可以在不降低杂散性能要求的前提下实现小步进的频率合成器。在此基础上提出了一种DDS+PLL+混频的L波段小步进频率合成器的实现方案。根据方案,选择DDS芯片AD9850和PLL芯片ADF4112来搭建电路。给出了试验测试结果。测试结果表明,在L波段实现了相位噪声-94dBc/Hz@1kHz,杂散抑制-60dBc,频率步进1kHz,验证了该方案的可行性。     

L波段小步进频率合成器的设计

采用了锁相环(PLL)结合直接数字频率合成(DDS)的方法实现L波段小步进频率合成器,分析了此种频率合成器的相位噪声和杂散指标。介绍了具体的电路设计过程。实验测试表明,实现的L波段频率合成器结合了锁相环式和直接数字式频率合成的优点,步进间隔1 kHz,相位噪声在10 kHz处可达-98 dBc/Hz,杂散抑制-70 dBc,具有相噪低、杂散抑制好、步进小等特点。     

基于DDS的锁相频率合成器设计

提出一种基于直接频率合成技术(DDS)的锁相环(PLL)频率合成器,该合成器利用DDS输出与PLL反馈回路中的压控振荡器(VCO)输出混频,替代多环锁相频率合成器中的低频率子环,使合成器输出频率在89.6~110.4 MHz之间分辨率达1 Hz,并保持DDS相噪、杂散水平不变。结合DDS的快速频率切换和PLL环路跟踪能力,实现信号的快速跳频。本文给出了技术方案,讨论部分电路设计,并对主要技术指标进行理论分析,最后给出了实验结果。     

高性能L频段频率合成器的改进设计

为了满足航天测控信道的要求,提出了一种高性能L频段频率合成器设计的改进方案,采用PLL+DDS+PLL结构实现了小步进、低杂散、低相噪的信号输出。分析了方案的可行性,设计了样品,并进行了测试,结果显示其相位噪声优于-100 dBc/Hz@10 kHz,杂散优于-75 dBc,但附加的杂散信号导致了系统同频干扰。通过分析找出引起同频干扰的机理,并提出了相应的改进措施。所提方案对测控通信、电子对抗等领域中频率合成器的研发具有一定的参考价值。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks