共查询到20条相似文献,搜索用时 125 毫秒
1.
光刻机曝光光学中的概念辨析 总被引:3,自引:0,他引:3
归纳解释了光刻机曝光光学中的若干重要概念,例如分辨率、焦深等,详细地阐述了光刻机曝光的原理。考虑到类似概念在不同系统中的含义差别,进行了针对性的辨析。从物理光学层次了解和掌握光刻机曝光的机理。 相似文献
2.
3.
介绍了双面光刻机的类型、工作原理及特点,研究分析了双掩模光刻机的曝光方式,提出了一种通过改进曝光模式、提高双掩模光刻机曝光分辨率及基片曝光线条均匀性的方法,并通过生产线工艺验证及数据分析,得出通过该工艺曝光模式,满足生产线实际工艺要求。 相似文献
4.
随着半导体技术突飞猛进的发展,对于制造半导体器件的重要工艺——光刻工艺的要求也越来越高。这些要求中“关于如何提高接触式光刻机套刻精度问题”已成为当前设计新的接触式光刻机的焦点。本文仅就这个问题谈一些粗浅看法。一、目前光刻机发展概况从目前光刻机发展趋向来看,曝光光波越来越短。因为光刻图形分辨率与所用曝光光波的长度的平方根成正比,所以总的趋向是改变曝光的光源。由于它的改变又引起曝 相似文献
5.
程建瑞 《电子工业专用设备》2015,(5)
光刻机的分辨率是基于瑞利分辨率公式R=k1λ/NA,提高分辨率的途径是缩短曝光光源的波长和提高投影物镜的数值孔径.目前主流市场使用的是193 nm 浸没光刻机多曝光技术,已经实现16 nm 技术节点的集成电路大规模生产.相对于193 nm 浸没光刻机双曝光技术,极紫外(波长13.5 nm )光刻技术可以为集成电路的生产提供更高的k1,在提供高分辨率的同时拥有较大的工艺窗口,减小光刻工艺复杂性,是具有很大吸引力的光学光刻技术,预计将在14 nm/11 nm 节点进入集成电路批量生产应用.但是,极紫外光刻技术还有包括曝光成像(patterning)、掩模版(m ask)、光刻机(scanner)、高功率极紫外光源(source)、极紫外光刻胶、光学系统寿命等挑战需要解决.其中光刻机方面的挑战主要有:光刻机基础平台技术,对焦、剂量与套刻控制技术,光学设计与制造技术,光学测量技术,多层膜技术,波像差、杂散光控制等技术.本文对极紫外光刻的主要挑战技术进行论述. 相似文献
6.
光刻机自动对准工作台是光刻机的核心执行功能部件,直接影响着光刻机找平、锁紧、微分离、自动对准执行等关键功能动作;结构设计紧凑精巧,包含复杂气动控制和高速、精密运动控制。运动控制的精度决定着对准精度,目前接触接近式掩模光刻机的对准精度达到0.5μm,因此工作台运动控制的精度应小于0.5μm。 相似文献
7.
<正> 以前报导过用较短的波长曝光能够增加投影光刻机的调制传递函数,因而能有效地提高光刻机的分辨率。本文在上述前提下就边缘锐度的问题发表一些看法。 F/3型投影光刻机经改进后能在275nm~325nm范围内曝光,而且在标准工艺条件下,用重氮型(Shipley)光致抗蚀剂AZ-2400可曝出1μm的图形。硅衬底上有720nm厚的湿法生长氧化物。 相似文献
8.
<正> 概述 光刻机是生产半导体器件的重要工艺设备之一,它可分为工作台对准系统和光学曝光系统两大部分。对于一台性能优良的光刻机光学曝光系统起着不容忽视的作用。近代发展起来的光刻机在曝光系统上采用了一系列新技术,例如在光学设计上采用复眼透镜组来减少光学衍射效应,提高光的均匀性;在幅照光源上采用恒光强控制(如Rarlsu-ss,uv系列光刻机);对曝光时间采用积分曝光(如Canon PLF-500系列光刻机)等。本文仅从电学角度来论述光刻机的曝光控制系统,并对某些专题进行较详细地分析,以便读者可有一深入和系统了解。 相似文献
9.
0.4μm条宽的光刻 总被引:1,自引:0,他引:1
文章讨论了MJB3UV300型光刻机的控制调整。以及抗蚀剂工艺条件的改进,消除影响曝光分辨率的驻波和衍射作用,实现了边缘整齐陡直、0.4μm条宽的光刻。 相似文献
10.
光刻机的曝光量和焦距会随着做片量的增加发生漂移,具体表现为曝光场内和圆片内出现曝光不均的质量异常。设计了针形解析图形和方形显开解析图形,利用Ultra Step 1000光刻机进行实验,分析了曝光量和焦距的变化对解析图形解析值的影响。结果表明,曝光量对针形光胶解析图形影响较大,焦距对方形显开解析图形的影响较大。设计了解析图形在曝光场内和圆片内的布局方案,以及在线检测曝光场内和圆片内的曝光均匀性的具体方法,利用该方法可以有效提高光刻机曝光均匀性的在线监控效率,提早预防曝光不均异常现象的发生。该监控方法可以应用于其他类型的光刻机。 相似文献
11.
12.
13.
This paper describes the architecture and performance of a new high resolution timing generator used as a building block for time-to-digital converters (TDC) and clock alignment functions. The timing generator is implemented as an array of delay locked loops. This architecture enables a timing generator with subgate delay resolution to be implemented in a standard digital CMOS process. The TDC function is implemented by storing the state of the timing generator signals in an asynchronous pipeline buffer when a hit signal is asserted. The clock alignment function is obtained by selecting one of the timing generator signals as an output clock. The proposed timing generator has been mapped into a 1.0 μm CMOS process and an r.m.s. error of the time taps of 48 ps has been measured with a bin size of 0.15 ns. Used as a TDC device, an r.m.s. error of 76 ps has been obtained, A short overview of the basic principles of major TDC and timing generator architectures is given to compare the merits of the proposed scheme to other alternatives 相似文献
14.
对于厚铝芯片的制造工艺,由于光刻对准标记上覆盖了厚的铝层,对准标记形貌轮廓会变得模糊,这会导致光刻对准出现困难,对偏的问题将变得常见。为了解决此问题,提出了多种改善方法,首先采用叠加标记法,通过将不同层次的对准标记进行叠加,增大了标记的台阶,对准标记的轮廓变得比原来清晰。其次是局部溅射法,通过夹具保护对准标记,确保标记不被厚铝覆盖,因此厚铝将不会对对准标记产生任何影响。最后是剥离工艺法,通过光刻胶保护对准标记,使之不被厚铝覆盖,因此,对准标记形貌将会保持清晰。这些方法在工艺和原理上是不同的,它们适用于不同的环境。通过这些方法,基本可以解决厚铝工艺中光刻对准困难的问题。 相似文献
15.
By using adaptive techniques an antenna array can achieve an angular resolution of uncorrelated interference sources substantially greater than the aperture of diffraction limit. The antenna beam is scanned over the interference source locations, and for each scan condition the adaptive processor is allowed to reach its steady state. It is shown that for realistic ratios of interference strengths to system thermal noise, resolutions in excess of 0.25 times the Rayleigh limit can be achieved. 相似文献
16.
The general considerations and principles involved with IR image up-conversion are presented and discussed. The factors that limit the resolution of the up-converted image are analyzed and the merits of three types of optical systems are discussed with regard to resolution and efficiency of up-conversion. Several characteristics of six nonlinear crystals are calculated and compared. 相似文献
17.
Imaging below the diffraction limit: a statistical analysis 总被引:4,自引:0,他引:4
The present paper is concerned with the statistical analysis of the resolution limit in a so-called "diffraction-limited" imaging system. The canonical case study is that of incoherent imaging of two closely-spaced sources of possibly unequal brightness. The objective is to study how far beyond the classical Rayleigh limit of resolution one can reach at a given signal to noise ratio. The analysis uses tools from statistical detection and estimation theory. Specifically, we will derive explicit relationships between the minimum detectable distance between two closely-spaced point sources imaged incoherently at a given SNR. For completeness, asymptotic performance analysis for the estimation of the unknown parameters is carried out using the Cramér-Rao bound. To gain maximum intuition, the analysis is carried out in one dimension, but can be well extended to the two-dimensional case and to more practical models. 相似文献
18.
Saez-Landete J. Salcedo-Sanz S. Cruz-Roldan F. Amo-Lopez P. Blanco-Velasco M. 《Lightwave Technology, Journal of》2008,26(12):1702-1707
Mask alignment is one of the most critical processes in photolithography. Prior to the shadow projection, the alignment between the lithographic mask and the silicon wafer is needed. In contact and proximity photolithography, a method to achieve the alignment with submicron or even nanometer resolution consists of superimposing two identical 2-D zero reference codes and registering the optical output signal. In order to increase the resolution of the system, the size of the code must be reduced and the diffractive effects become strong. The signal is then degraded and the precision of the alignment is reduced. In this paper, the effect of the diffraction in 2-D codes is analyzed, the degradation of the signal is characterized and its effect is modelled by means of a simple and fast computing parameter. Finally, we propose a genetic algorithm to optimize this parameter and design 2-D codes robust to diffractive effects. We propose the use of these codes to increase the resolution of alignment systems. 相似文献
19.
LPP聚酰亚胺取向膜的制备及其取向研究 总被引:1,自引:1,他引:0
合成具有光敏性的聚酰亚胺OPDA-BAPAF-Cin-CN,对其化学性质进行研究。用这种聚酰亚胺作为光致取向剂,能对液晶MLC-LC2000有良好的取向效果。研究了这种取向剂对液晶MLC-LC2000的取向方向及提高预倾角的作用,发现该取向剂有良好的热稳定性。 相似文献