基于智能终端辅助的ANDSF网络选择机制增强

随着LTE与WLAN热点的大规模建设部署,为了综合利用WLAN与3GPP移动网络各自的优势,3GPPR9定义了3GPP与WLAN网络融合架构体系,并在3GPP与WLAN网间选择中引入ANDSF(Access Network Discovery Support Functions,接入网发现和选择功能单元)网络选择机制。本文在研究3GPP-WLAN融合参考体系架构与现有ANDSF网络选择机制基础上,针对ANDSF网络选择机制的不足,提出了一种基于智能终端用户业务感知与ANDSF相结合的网络选择增强方案,为融合架构中3GPP与WLAN网络切换提供了基础,有效提高用户体验与网络控制能力。     

3GPP LTE/WLAN无线融合技术研究进展

总结了4种在无线侧实现长期演进(LTE)系统与无线局域网(WLAN)相互融合的技术方案.在分析传统的核心网融合方案不足之处的基础上,重点介绍了无线融合在3 GPP R12和R13阶段的研究进展和标准化情况,讨论了各方案对终端、演进型节点B(eNodeB)和WLAN的影响,综合对比了每种方案的特征、优缺点及应用场景,为运营商部署LTE/WLAN融合网络提供了思路.     

WLAN-3GPP融合架构中网络选择机制优化

为了综合利用WLAN与3GPP移动网络各自的优势,3GPP R9定义了3GPP与WLAN网络融合体系架构,并在3GPP与WLAN网间选择中引入接入网发现和选择功能单元(ANDSF)网络选择机制。文章在研究WLAN-3GPP融合参考体系架构与现有ANDSF网络选择机制基础上,分析了基于ANDSF网络选择机制的不足,提出了一种基于用户业务感知与ANDSF相结合的WLAN-3GPP融合架构网络选择方案,为融合架构中3GPP与WLAN网络切换提供了基础,有效提高用户体验与网络控制能力。     

LTE-Fi应用及规划组网方案研究

LTE-Fi作为LTE网络和WLAN网络的纽带,可以充分发挥网络协同优势,同时解决LTE终端匮乏和WLAN回传困难等问题。本文从LTE-Fi的网络定位出发,研究了LTE-Fi的应用场景、组网方案、设备要求等关键问题,给出LTE-Fi在实际网络中应用的部署建议。     

CDMA向LTE网络演进下的VPDN实现方案研究

VPDN是利用IP网络的承载功能,结合相应的认证和授权机制,基于拨号连接的虚拟拨号专用网。在分析CDMA网络的VPDN实现方案的基础上,对4G LTE网络下的VPDN主流方案进行了研究分析和对比,并对CDMA运营商在3G、4G融合网络下的VPDN业务部署方案给出了建议。     

LTE国际漫游技术研究

随着LTE网络在全球推广部署,对应的LTE国际漫游也开始逐步推进。首先研究了LTE网络的国际漫游架构,用于LTE漫游的IPX网络连接模型,LTE语音漫游的需求和网络架构,然后提出了LTE语音漫游的方案和建议,并详细分析了LTE网络下主要采用的两种方式:CSFB和VoL TE,可供其他运营商参考与借鉴。     

关于WLAN网络规划的探讨

WLAN网络作为2G/3G网络的延伸和补充,能很好地分流移动用户的数据业务,如何有效地建设WLAN网络将是未来的研究热点。本文主要从WLAN网络热点选址、网络架构以及无线规划三方面切入,重点分析了不同网络架构部署方案的优缺点,给出了网络架构的规划方案以及无线频点规划和未来扩容方案。     

LTE中的多媒体广播多播技术研究及部署建议

LTE系统中的多媒体广播多播技术在逻辑架构、业务模式及传输方式等方面不同于3G。对LTE网络中的多媒体广播多播技术原理、流程进行了分析,基于目前运营商网络架构,给出了部署方案建议,最后对多媒体广播多播技术的业务应用进行了探讨。     

WLAN与EPC网兰融合架构研究

文章通过对WLAN与EPC网络融合架构的深入研究,分析了WLAN系统作为可信接入和不可信接入的融合架构的方案,并进行对比分析,得出了融合架构的应用建议.     

WLAN与LEPACN与EPC网络融合架构研究

文章通过对WLAN与EPC网络融合架构的深入研究,分析了WLAN系统作为可信接入和不可信接入的融合架构的方案,并进行对比分析,得出了融合架构的应用建议。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.