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1.
V-band Low-noise Integrated Circuit Receiver 总被引:2,自引:0,他引:2
《Microwave Theory and Techniques》1983,31(2):146-154
A compact low-noise V-band integrated circuit receiver has been developed for space communication systems, The receiver accepts an RF input of 60-63 GHz and generates an IF output of 3-6 GHz. A Gunn oscillator at 57 GHz is phaselocked to a low-frequency reference source to achieve high stability and low FM noise. The receiver has an overall single sideband noise figure of less than 10.5 dB and an RF to IF gain of 40 dB over a 3-GHz RF bandwidth. All RF circuits are fabricated in integrated circuits on a Duroid substrate. 相似文献
2.
Tae-young Choi Sharifi H. Sigmarsson H.H. Chappell W.J. Mohammadi S. Katehi L.P.B. 《Microwave Theory and Techniques》2007,55(11):2298-2305
A 10-GHz filter/receiver module is implemented in a novel 3-D integration technique suitable for RF and microwave circuits. The receiver designed and fabricated in a commercial 0.18-mum CMOS process is integrated with embedded passive components fabricated on a high-resistivity Si substrate using a recently developed self-aligned wafer-level integration technology. Integration with the filter is achieved through bonding a high-Q evanescent-mode cavity filter onto the silicon wafer using screen printable conductive epoxy. With adjustment of the input matching of the receiver integrated circuit by the embedded passives fabricated on the Si substrate, the return loss, conversion gain, and noise figure of the front-end receiver are improved. At RF frequency of 10.3 GHz and with an IF frequency of 50 MHz, the integrated front-end system achieves a conversion gain of 19 dB, and an overall noise figure of 10 dB. A fully integrated filter/receiver on an Si substrate that operates at microwave frequencies is demonstrated. 相似文献
3.
《Electron Devices, IEEE Transactions on》1980,27(10):1934-1944
In this paper, we deal with a model of a specific Josephson microwave circuit, that of a Josephson oscillator, and show that the RF behavior of a real Josephson oscillator may be predicted from a knowledge of the experimentally measured microwave circuit parameters, the junction critical current, and junction shunt resistance. Based on observations made with an electronic analog, we present an approximate analytical method for calculating the junction impedance or, rigorously speaking, the appropriate single sinusoidal-input describing function. Emphasis is placed on the proper use of the impedance, for example, in calculating the operating point and the expected output power of the oscillator. The circuit model used is that of a junction, described by the resistively shunted junction model, coupled to a seriesLCR resonance. Further confirmation of the validity of the circuit-theory approach is obtained by using the injection-locked oscillator theory of Kurokawa to predict the in-lock amplitude variation of a Josephson oscillator exposed to a weak synchronizing signal. Experimental data describing the amplitude variation and output power of an oscillator consisting of a point-contact junction placed in a 9.72-GHz coaxial resonator are presented. The data demonstrate the reasonable agreement obtained when the measured critical current and shunt resistance are used with the analytical expression for the junction impedance and the circuit theory to predict the RF behavior of a Josephson oscillator. Circuits more complex than our specific example may be handled by means of describing function techniques recently developed in the area of nonlinear solid-state microwave devices. 相似文献
4.
A 20 GHz microwave sampler 总被引:1,自引:0,他引:1
A microwave sampler circuit which operates over the frequency band of 1-20 GHz and has a number of novel features is described. These features include a wideband microstrip-to-slot balun and a wideband active isolator the function of which is to reduce the local oscillator to RF leakage from the input port of the sampler. The signal-to-noise ratio over the input bandwidth is greater than 20 dB at an input power level of -32 dBm. This signal-to-noise ratio was measured in an IF bandwidth of 175 MHz and includes the contribution from the IF amplifier. The sampler, which is made on alumina using MIC techniques, has an integrated impulse generator driven with a sinusoidal local oscillator of only 20 dBm over the frequency band of 250-350 MHz. The IF signal is in the 10-175-MHz band. The RF input VSWR is better than 2:1 up to 20 GHz, and the oscillator to RF breakthrough is better than -58 dBm (-78 dBc) when driven with a local oscillator of 20 dBm. This unusually low leakage was achieved by using the active isolator prior to the sampling circuit 相似文献
5.
Gunnarsson S.E. Wadefalk N. Svedin J. Cherednichenko S. Angelov I. Zirath H. Kallfass I. Leuther A. 《Microwave and Wireless Components Letters, IEEE》2008,18(4):284-286
This letter presents the design and characterization of a 220 GHz microstrip single-chip receiver monolithic microwave integrated circuit (MMIC) with an integrated antenna in a 0.1 mum GaAs metamorphic high electron mobility transistor technology. The receiver MMIC consists of a novel slot-square substrate lens feed antenna, a three-stage low noise amplifier, and a sub-harmonically pumped resistive mixer. The receiver MMIC is mounted on a 12 mm silicon substrate lens which focuses the radiation from the calibration loads to the on-chip antenna through an opening in the backside metallization of the MMIC. The double sideband noise figure of this quasioptical receiver is as low as 8.4 dB (1750 K) at 220 GHz including the losses in the antenna and in the lens. To the best of the authors' knowledge, this work demonstrates the highest integration level versus operating frequency for a MMIC ever published, regardless of technology. 相似文献
6.
I-Jen Chen Huei Wang Powen Hsu 《Microwave Theory and Techniques》2003,51(12):2461-2468
A single-chip monolithic integrated V-band folded-slot antenna with two Schottky-barrier diodes and a local oscillator source is developed as a quasi-optical receiver for the first time. The monolithic microwave integrated circuit consists of a voltage-controlled oscillator (VCO), a coplanar waveguide (CPW)-to-slotline transition, a low-pass filter, a folded-slot antenna, and a 180/spl deg/ single balanced mixer. The chip is fabricated based on the 0.15-/spl mu/m GaAs high electron-mobility transistor technology and the overall chip size is 3/spl times/1.5 mm/sup 2/. A finite-difference time-domain method solver is also developed for analyzing the embedded impedance characteristics of the folded-slot antenna to design the mixer. The chip is placed on an extended hemispherical silicon substrate lens to be a quasi-optical receiver. The performance of the receiver is verified by experimental measurements. The VCO has achieved a tuning range from 61.9 to 62.5 GHz and approximately 9.3-dBm output power. The CPW-to-slotline transition has bandwidth from 50 to 70 GHz. The mixer results in 15-dB single-sideband conversion loss and the receiving patterns of the IF power are also measured. 相似文献
7.
Planar quasi-optical receivers that compactly integrate a coupled slot antenna and a HEMT or MESFET balanced self-oscillating mixer and on the same substrate for applications in microwave and millimeter-wave receiver arrays are discussed. Both the HEMT and the MESFET circuit are designed and demonstrated at X -band. The HEMT circuit exhibits an isotropic conversion gain of 4.5 dB and a noise figure of 6.5 dB. The isotropic conversion gain of the HEMT circuit is 7.5 dB higher than the mixer diode circuit previously reported 相似文献
8.
In this paper, we report on the development of a new integrated-circuit sampling down-converter having its own pulse generator, local oscillator (LO), and IF amplifier. The internal pulse generator uses a step recovery diode together with a unique ultra-wide-band hybrid junction to generate sub-nanosecond balanced pulses for gating the sampling diodes. The down-converter exhibits a conversion gain from 12 to 15.5 dB over an RF frequency of 0.01-3 GHz with 10-MHz LO and sampling pulses of about 100 ps. Return loss at the RF port is better than 15 dB over this RF bandwidth. The down-converter exhibits a good linearity and low harmonic levels. This down-converter employs a coplanar waveguide and slot line to make the entire circuit uniplanar and is, thus, suitable for low-cost production. In addition, if has an internal pulse generator, LO, and IF amplifier, making it a compact receiver subsystem, which can readily be used in many microwave systems 相似文献
9.
Hee-Sauk Jhon Ickhyun Song In Man Kang Hyungcheol Shin 《Microwave and Wireless Components Letters, IEEE》2007,17(10):736-738
This letter presents the design and measurement results of a fully integrated CMOS receiver front-end and voltage controlled oscillator (VCO) for 2.4 GHz industrial, scientific and medical (ISM)-band application. For low cost design, this receiver has been fabricated with a 0.18 mum thin metal CMOS process with a top metal thickness of only 0.84 mum. The receiver integrates radio frequency (RF) front-end (a single-ended low-noise amplifier (LNA) with on-chip spiral inductors and a double balanced down conversion mixer), VCO and local oscillation buffers on a single chip together with an internal output buffer. To obtain the high-quality factor inductor in LNA, VCO and down conversion mixer design, patterned-ground shields (PGS) are placed under the inductor to reduce the effect from image current of resistive Si substrate. Moreover, in VCO and mixer design, due to the incapability of using thick top metal layer of which the thickness is over 2 mum, as used in many RF CMOS process, the structure of dual-metal layer in which we make electrically short circuit between the top metal and the next metal below it by a great number of via arrays along the metal traces is adopted to compensate the Q -factor degradation. In this letter, the receiver achieves a conversion gain of 23 dB, noise figure of 8.1 dB and P1 dB of -20 dBm at 39 MHz with 21 mW power dissipation from a 1.8 V power supply. It occupies a whole circuit area of 2 mm2. 相似文献
10.
《Microwave Theory and Techniques》1986,34(1):19-25
A simplified quasi-linear method is proposed to design a GaAs MESFET oscillator. By expressing the generated power P/sub gen/ as a function of FET gate and drain RF voltages, it is possible to maximize P/sub gen/ under the limiting conditions on intrinsic FET terminal voltage amplitudes. The feedback circuit elements to realize a GaAs MESFET oscillator are derived. An X-band GaAs MESFET oscillator was designed by the quasi-linear method and was fabricated by using microwave integrated-circuit technology. 相似文献
11.
Ogawa K. Ishizaki T. Hashimoto K. Sakakura M. Uwano T. 《Microwave Theory and Techniques》1989,37(9):1434-1441
A very compact 50-GHz-band transmitter/receiver for a video link is described. The RF assemblies used in the system consist of 25/50-GHz frequency doublers, a 25-GHz dielectric-resonator oscillator, and a 25-GHz FM modulator. The circuits make extensive use of microwave integrated circuit (MIC) technology with all GaAs FETs as active elements. The frequency doublers exhibit a minimum conversion loss of 2.6 dB and a maximum output power of 11 dBm. The modulator is highly frequency stabilized by the dielectric resonator. Recently developed miniature probe microstrip-to-waveguide transitions permit the MIC assemblies to be installed compactly in hermetically sealed packages. Design considerations and experimental data for the transition are presented. Using these technologies a transmitting power of 10 dBm and a receiver noise figure of 13 dB have been obtained 相似文献
12.
《Microwave Theory and Techniques》1963,11(2):123-129
The advantages of using a particular dc forward bias in maintaining receiver sensitivity for fairly large reductions in local oscillator power are experimentally verified. Definite improvement of performance is obtained over broad band operation where L.O. power level may vary considerably. For each of the mixer diodes investigated there is a particular optimum bias for each diode type where both the input signal level and local oscillator RF impedances as well as the IF impedance are practically stationary with respect to very large changes in local oscillator power level. At optimum bias, signal frequency RF and IF impedances were found to vary by only about ten per cent for L.O. power reduced from 1 mw to 1 /spl mu/w. This results in considerably less reduction in tangential signal sensitivity over that obtained in the unbiased or overbiased condition. 相似文献
13.
《Electron Devices, IEEE Transactions on》1981,28(2):158-162
Results of the first monolithic microwave GaAs FET oscillator [1] are presented. The oscillator design philosophy is outlined. Design procedures for the oscillator and techniques for realization of various circuit components on the semi-insulating GaAs substrate are indicated. Performance of the oscillator is described and commented upon. 相似文献
14.
15.
A highly integrated wideband converter that was designed to upconvert the entire 6- to 18-GHz input RF frequency band to a 22-GHz intermediate frequency using a 28- to 40-GHz local oscillator (LO) is described. The circuit was designed using 0.25-μm pseudomorphic HEMT technology. The converter incorporates a three-stage RF amplifier, a three-stage LO amplifier, and an active balanced mixer, all integrated on a chip 96 mil×96 mil in size. The upconverter monolithic microwave integrated circuit (MMIC) has an average of 10-dB conversion gain across the full 6-18-GHz input band 相似文献
16.
Seo‐Young Lee Young‐Tak Han Jong‐Hoi Kim Hyun‐Do Joung Joong‐Seon Choe Chun‐Ju Youn Young‐Ho Ko Yong‐Hwan Kwon 《ETRI Journal》2016,38(5):981-987
We present a cost‐effective dual polarization quadrature phase‐shift coherent receiver module using a silica planar lightwave circuit (PLC) hybrid assembly. Two polarization beam splitters and two 90° optical hybrids are monolithically integrated in one silica PLC chip with an index contrast of 2%‐Δ. Two four‐channel spot‐size converter integrated waveguide‐photodetector (PD) arrays are bonded on PD carriers for transverse‐electric/transverse‐magnetic polarization, and butt‐coupled to a polished facet of the PLC using a simple chip‐to‐chip bonding method. Instead of a ceramic sub‐mount, a low‐cost printed circuit board is applied in the module. A stepped CuW block is used to dissipate the heat generated from trans‐impedance amplifiers and to vertically align RF transmission lines. The fabricated coherent receiver shows a 3‐dB bandwidth of 26 GHz and a common mode rejection ratio of 16 dB at 22 GHz for a local oscillator optical input. A bit error rate of is achieved at a 112‐Gbps back‐to‐back transmission with off‐line digital signal processing. 相似文献
17.
A new concept, design and realisation of an integrated uniplanar microwave part of a transmitter-receiver with active antennas is presented. All circuits are realised using the three coplanar strips technique (TCS). The whole subsystem is realised with one low cost MESFET (NE72089A). The common oscillator has an electronically controlled frequency. The model is realised at a transmitting frequency of 9.5 GHz. The transmitter power is 11 dBm and the mixer isotropic conversion loss is 1.5 dB. The local oscillator signal level (in the gate circuit) is ~9 dBm. The total oscillator DC to RF efficiency is 22.2%. The concept and design can be applied to higher microwave and millimetre-wave frequencies 相似文献
18.
Sang‐Heung Lee Seung‐Yun Lee Hyun‐Cheol Bae Ja‐Yol Lee Sang‐Hoon Kim Bo Woo Kim Jin‐Yeong Kang 《ETRI Journal》2005,27(5):569-578
The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on‐chip 1 to 6 GHz up‐conversion and 1 to 8 GHz down‐conversion mixers using a 0.8 µm SiGe hetero‐junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up‐conversion mixer was implemented on‐chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up‐conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down‐conversion mixer was implemented on‐chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down‐conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz. 相似文献
19.
Ping-Chun Yeh Wei-Cheng Liu Hwann-Kaeo Chiou 《Microwave and Wireless Components Letters, IEEE》2005,15(2):62-64
This work reports a novel lump-element balun for use in a miniature monolithic subharmonically pumped resistive mixer (SPRM) microwave monolithic integrated circuit. The proposed balun is simply analogous to the traditional Marchand balun. The coupled transmission lines are replaced by lump elements, significantly reducing the size of the balun. This balun requires no complicated three-dimensional electromagnetic simulations, multilayers or suspended substrate techniques; therefore, the design parameters are easily calculated. A 2.4-GHz balun is demonstrated using printed circuit board technology. The measurements show that the outputs of balun with high-pass and band-pass responses, a 1-dB gain balance, and a 5/spl deg/ phase balance from 1.7 to 2.45 GHz. The balun was then applied in the design of a 28-GHz monolithic SPRM. The measured conversion loss of the mixer was less than 11dB at a radio frequency (RF) bandwidth of 27.5-28.5 GHz at a fixed 1 GHz IF, a local oscillator (LO)-RF isolation of over 35 dB, and a 1-dB compression point higher than 9 dBm. The chip area of the mixer is less than 2.0 mm/sup 2/. 相似文献
20.
A 1.2-V RF front-end with on-chip VCO for PCS 1900 direct conversion receiver in 0.13-/spl mu/m CMOS
Sivonen P. Tervaluoto J. Mikkola N. Parssinen A. 《Solid-State Circuits, IEEE Journal of》2006,41(2):384-394
In this paper, a 1.2-V RF front-end realized for the personal communications services (PCS) direct conversion receiver is presented. The RF front-end comprises a low-noise amplifier (LNA), quadrature mixers, and active RC low-pass filters with gain control. Quadrature local oscillator (LO) signals are generated on chip by a double-frequency voltage-controlled oscillator (VCO) and frequency divider. A current-mode interface between the downconversion mixer output and analog baseband input together with a dynamic matching technique simultaneously improves the mixer linearity, allows the reduction of flicker noise due to the mixer switches, and minimizes the noise contribution of the analog baseband. The dynamic matching technique is employed to suppress the flicker noise of the common-mode feedback (CMFB) circuit utilized at the mixer output, which otherwise would dominate the low-frequency noise of the mixer. Various low-voltage circuit techniques are employed to enhance both the mixer second- and third-order linearity, and to lower the flicker noise. The RF front-end is fabricated in a 0.13-/spl mu/m CMOS process utilizing only standard process options. The RF front-end achieves a voltage gain of 50 dB, noise figure of 3.9 dB when integrated from 100 Hz to 135 kHz, IIP3 of -9 dBm, and at least IIP2 of +30dBm without calibration. The 4-GHz VCO meets the PCS 1900 phase noise specifications and has a phase noise of -132dBc/Hz at 3-MHz offset. 相似文献