掺Nd纳米ZnO薄膜特性研究

研究了用真空蒸发法在玻璃衬底上制备稀土掺杂纳米ZnO薄膜结构、导电性及光透射性能。结果显示 ,在 5 0 0℃氧化、热处理稀土元素Nd掺杂后能够明显改善纳米ZnO薄膜的结构特性 ,薄膜的晶粒尺寸随掺杂含量的增加而减小。掺Nd使ZnO薄膜的电性能有所改善但使纳米ZnO薄膜的光透射性有所降低。     

掺Nd纳米ZnO薄膜特性研究

研究了用真空蒸发法在玻璃衬底上制备稀土掺杂纳米ZnO薄膜结构、导电性及光透射性能。结果显示。在500℃氧化、热处理稀土元素Nd掺杂后能够明显改善纳米ZnO薄膜的结构特性，薄膜的晶粒尺寸随掺杂含量的增加而减小。掺Nd使ZnO薄膜的电性能有所改善但使纳米ZnO薄膜的光透射性有所降低。     

Sb掺杂Sn_2S_3薄膜的制备及光学特性

真空蒸发制备Sb掺杂Sn2S3多晶薄膜(玻璃衬底),研究不同比例Sb掺杂对Sn2S3薄膜的结构、表面形貌、化学组分及光学特性的影响。实验给出5%掺Sb的薄膜经380℃热处理30min(氮气保护)得到正交晶系的Sn2S3∶Sb多晶薄膜,薄膜表面颗粒大小均匀,膜面致密有轻微颗粒聚集现象。薄膜体内Sn与S化学计量比为1∶1.49,掺Sb后为1∶0.543,薄膜中Sn、S、Sb分别以Sn2+、Sn4+、S2-、Sb5+存在。纯Sn2S3薄膜的光透过率在350~500nm波长范围内基本为零,随着波长增大,光透过率增加,其直接光学带隙为2.2eV,吸收边为564nm;掺Sb后薄膜的光透率明显降低,光学带隙为1.395eV比未掺杂时减小0.805eV,吸收边发生红移为889nm。     

ITO上磁控溅射ZnO薄膜及其光电性质

在ITO(In2O3:Sn)衬底上射频溅射ZnO薄膜,研究了射频溅射功率对ZnO薄膜的晶体结构,表面形貌及光学透过率的影响.结果表明,随着射频功率的提高,沿(002)方向生长的ZnO薄膜的结晶度显著增强,薄膜的表面颗粒略有减小,表面粗糙度由13.13 nm降低到5.06 nm.在300～400 nm波长范围内薄膜的光学透过率随着射频功率的增加而降低.在双层薄膜中空间内建电场的存在有助于光生电子和空穴有效地分离,使ZnO/ITO双层薄膜具有较强的光电响应能力,光电流达14μA.     

稀土Nd掺杂纳米SnO2薄膜特性

对采用真空气相沉积法在玻璃衬底上制备的稀土Nd掺杂的SnO2薄膜,进行结构、电学及光学特性的测试分析.实验表明:氧化、热处理条件为500 ℃、45 min时样品性能好.采用一步成膜工艺法制备的SnO2薄膜晶粒度较小,随掺Nd浓度的增大,从31.516 nm减小到25.927 nm;两步成膜工艺法制备的SnO2薄膜晶粒度随掺Nd浓度的增大,从45.692 nm增至66.256 nm.XRD分析,掺Nd(5 at%)薄膜沿[110]、[101]晶向的衍射峰加强,薄膜呈多晶结构.掺Nd可使薄膜透光率下降,而薄膜的薄层电阻随热处理温度升高和掺Nd浓度的增大,呈先降后升趋势.     

In含量变化对N-In共掺杂ZnO薄膜的结构和性能的影响

采用超声雾化热解法制备ZnO薄膜，对比分析了不同In含量的N-In共掺杂ZnO薄膜的显微结构，电学和光学性质。实验结果表明在N-In共掺杂条件下In的含量对ZnO薄膜的显微结构及性能有明显的影响。In的掺入使得ZnO中总体缺陷减少，晶粒外形更规则，C轴取向性更好。引入In能使ZnO更容易向P型转变；当前驱体溶液中In的比例〉0．03后，可以显著改善ZnO薄膜的电学性能和光学性能。     

In掺杂和退火对磁控溅射制备ZnO薄膜的结构和光电性质的影响

用射频磁控溅射技术在石英玻璃衬底上制备出ZnO和In掺杂的ZnO(ZnO∶In)薄膜,研究了In的掺杂和退火对薄膜的结构和光电性质的影响。所制备的薄膜为纤锌矿结构的ZnO相,In的掺杂有利于ZnO薄膜的c轴择优生长,并且使其表面更加致密平整,退火提高了薄膜的结晶行为,但使得薄膜的表面有部分团聚形成。由于In3+替代了Zn2+,提供了一个多余的电子,ZnO薄膜的电阻率从28.9Ω.cm降低到4.3×10-3Ω.cm。由于载流子浓度的增加和晶格尺寸的拉长,In的掺杂使得ZnO薄膜的禁带宽度增加;空气中退火后薄膜的载流子浓度降低和晶格尺寸的减小,使得禁带宽度降低。ZnO薄膜在可见光范围的透光率在90%以上,受In的掺杂和退火的影响不大。室温下用325 nm的激发光源测试了样品的光致发光(PL)谱,发现In的掺杂对薄膜的PL谱影响不大,而退火后的ZnO薄膜在446 nm处的蓝光发射明显增强,更适合于作为蓝色发光器件。     

衬底温度对磁控溅射制备外延ZnO薄膜结构特性的影响

在不同的衬底温度下,采用磁控溅射方法在蓝宝石(0001)衬底上制备了外延生长的ZnO薄膜.采用原子力显微镜(AFM)、X射线衍射仪(XRD)、可见-紫外分光光度计系统研究了衬底温度对ZnO薄膜微观结构和光学特性的影响.AFM结果表明在不同村底温度制备的ZnO薄膜具有较为均匀的ZnO晶粒,且晶粒的尺寸随衬底温度的增加逐渐增大.XRD结果显示不同温度生长的ZnO薄膜均为外延生长,400℃生长的薄膜具有最好的结晶质量;光学透射谱显示在370nm附近均出现一个较陡的吸收边,表明制备的ZnO薄膜具有较高的质量,其光学能带隙随着衬底温度的增加而减小.     

沉积气压对电弧离子镀制备ZnO薄膜的结构和性能影响

采用阴极真空电弧离子镀技术在玻璃衬底上制备出了具有择优取向的透明ZnO薄膜. 利用X射线衍射仪、扫描电子显微镜及紫外-可见吸收光谱仪分别对ZnO薄膜的结构、表面形貌及可见光透过率进行了分析.XRD结果表明,所制备的ZnO薄膜具有六角纤锌矿结构的(002)和(101)两种取向,在沉积气压＞1.0Pa时所制备的ZnO薄膜具有(002)择优取向,并且非常稳定.SEM图表明,ZnO晶粒大小较为均匀,晶粒尺寸随着气压升高而变小.在400～1000nm范围内,ZnO薄膜的可见光透过率超过80%,吸收边在370nm附近,所对应的光学带隙约为3.33～3.40eV,并随着沉积气压上升而变大.     

磁控溅射法制备的CdS:Al薄膜的性质研究

采用Al和CdS双靶共溅射的方法, 调控Al和CdS源的沉积速率, 制备出不同Al掺杂浓度的CdS:Al薄膜。通过XRD、SEM、AFM、紫外-可见透射光谱分析、常温霍尔测试对CdS: Al薄膜的结构、形貌、光学和电学性质进行表征。XRD结果表明, 不同Al掺杂浓度的CdS:Al薄膜均为六方纤锌矿结构的多晶薄膜, 并且在(002)方向择优生长。SEM和AFM结果表明, CdS:Al薄膜的表面均匀致密, 表面粗糙度随着Al掺杂浓度的增加略有增加。紫外-可见透射光谱分析表明, CdS:Al薄膜禁带宽度在2.42~2.46 eV 之间, 随着Al掺杂浓度的增加而略微减小。常温霍尔测试结果证明, 掺Al对CdS薄膜的电学性质影响显著, 掺Al原子浓度3.8%以上的CdS薄膜, 载流子浓度增加了3个数量级, 电阻率下降了3个数量级。掺Al后的CdS薄膜n型更强, 有利于与CdTe形成更强的内建场, 从而提高太阳电池效率。用溅射方法制备的CdS:Al薄膜的性质适合用作CdTe薄膜太阳电池的窗口层。     

Structural aspects of Langmuir-Blodgett and cast films of zinc phthalocyanine and zinc hexadecafluorophthalocyanine

The processing of macrocyclic phthalocyanines (Pc) in the form of thin, nanostructured films has been usually carried out via evaporation techniques, owing to the low solubility exhibited by these compounds. The fabrication of Pc ultrathin films via the Langmuir-Blodgett technique may be advantageous from a technological point of view, since parameters such as film architecture and organization can be achieved without post-thermal treatments. In this study, a parent zinc phthalocyanine (ZnPc) and its fluorinated derivative (F₁₆ZnPc) were synthesized and manipulated in the form of LB films. The morphological and structural features of ZnPc and F₁₆ZnPc Langmuir-Blodgett films containing up to 31 layers were investigated using Fourier transform infrared spectroscopy (FTIR), micro-Raman spectroscopy and X-ray diffraction analyses and were compared to ZnPc and F₁₆ZnPc cast films. The interplanar distance obtained by X-ray specular reflection decreases from 12.64 Å for ZnPc to 12.16 Å for F₁₆ZnPc. FTIR spectra indicated absence of order in the LB films from ZnPc and F₁₆ZnPc, at least in the direction perpendicular to the substrate surface. Therefore, the order observed in the X-ray diffractograms means that the molecules might be organized in crystallites that are randomly oriented in the film.     

磁光盘的介质膜材料AlN,AlSiN薄膜的电子显微分析

本文研究了磁光盘介质薄膜－ＡｌＮ和ＡｌＳｉＮ薄膜的电子显微结构，通过透射电镜分析了ＡｌＮ薄膜的多晶结构和ｃ轴垂直取向；通过Ｘ射线衍射分析、透射电镜分析和Ｘ射线光电子能谱分析，确定了ＡｌＳｉＮ薄膜并不是多晶ＡｌＮ和ＳｉＮ薄膜的简单组合，而是形成了稳定的非晶特征结构。且ＡｌＳｉＮ薄膜由于其非晶结构而比ＡｌＮ薄膜的磁光克尔效应增强效果更优越。     

新型红外增透膜和保护膜EI

介绍了类金刚石碳（ＤＬＣ）膜和碳化锗（Ｇｅ＿ｘＣ＿（１－ｘ））簿膜的沉积方法、特性和在红外光学镀膜中的应用进展。     

Photoelectrochemical solar cells using electrodeposited GaAs and AlSb semiconductor films

Electrodeposited GaAs and AlSb thin film semiconductors were prepared under various deposition conditions. Reasonable stoichiometry could be attained as revealed by EDAX studies. The best stoichiometry was obtained are Ga_1·04As_0·96 and Al_1·12Sb_0·88. The band gap of the GaAs and AlSb films was ∼1·5 eV and 1·6 eV respectively. The electrochemical and photoelectrochemical studies on these films are reported with different redox-couples in aqueous and non-aqueous medium.     

钛酸锶钡薄膜掺杂改性研究进展

钛酸锶钡(BaxSr1-xTiO3,BST)薄膜具有优良的铁电、介电性能,在可调谐微波器件、动态随机存储器、红外探测器阵列等方面具有良好的应用前景.综述了近年来BST薄膜掺杂改性研究所取得的进展,特别是对晶格掺杂和晶界掺杂进行了较详细的评述,并对目前BST薄膜掺杂研究的几个前沿问题进行了详细的讨论.     

Nanocomposites alumina/Pt produced by PVD and thermal oxidation methods used in catalytic applications

The work was focused on the deposition of Al₂O₃+Pt composite in the form of a nanofilm adherent to the substrate with good surface development and catalytic properties on the surface of 0H20J5 foil. With this end in view, a special carousel fixture for fixing the corrugated and flat foil and then coating with Al and Pt from two magnetron sources, in order to obtain a nanofilm of Al+Pt composite, was designed. A Pt/Al laminate layer was also produced by depositing Pt first and then Al, and the other way round. The layer systems obtained this way were subject to oxidation for 48 h at 860 °C and under Ar+O₂. The surface examined has shown that the process of oxidation produces the compact sublayer of columnar crystals (whiskers) well adherent to the substrate from which the needle-like whiskers are growing. Structures of whiskers form a laminar system with a catalytic element having a very-well developed surface. Structure analyses revealed that the films obtained comprised mostly α and θ Al₂O₃ phases and missed a Pt crystalline phase. The film morphology on the basis of oxide-film sections examined by TEM showed that the α Al₂O₃ structure was generated mostly deep in oxide films and was integrated with the foil. A microanalysis showed that it was uniformly distributed in its entirety in the Pt-composite based layers; however, in the case of laminate the surface of whiskers was coated. It was found from the comparison of the laminar system activity that the composite layers revealed much better catalytic properties at lower temperature than the laminate layers.     

Electrochromic and morphological investigation of dry-lithiated nanostructured tungsten trioxide thin films

Electrochromic properties of porous nanostructured thin films of tungsten trioxide were investigated. Films were fabricated at normal and high vapor incidence angles with the technique of glancing angle deposition in a thermal evaporation chamber. A dry lithiation method was subsequently used to intercalate films with lithium atoms. Coloration in both visible and near-infrared regions was observed with lithium insertion. We report on the morphology, porosity, and optical properties of as-deposited and lithiated films, and discuss the role of substrate tilt in comparing the coloration efficiency of these films.     

Optical and electrical properties of zinc oxide films prepared by spray pyrolysis

Zinc oxide thin films were prepared on glass substrates from an aqueous solution of zinc acetate by spray pyrolysis. These films were characterized using X-ray diffraction, scanning electron microscopy and optical transmission. The films were highly transparent to the visible radiation and electrically conductive. Films deposited at optimum conditions exhibited a resistivity of 3·15×10⁻³ Ωm along with a transmittance of 98% at 550 nm.     

Structural and electrochemical behaviour of sputtered vanadium oxide films: oxygen non-stoichiometry and lithium ion sequestration

Structural and electrochemical aspects of vanadium oxide films recently reported from ICMCB/ ENSCPB have been examined using appropriate structural models. It is shown that amorphous films are nonstoichiometric as a result of pre-deposition decomposition of V₂O₅. It is proposed that the structure of amorphous films corresponds to a nanotextured mosaic of V₂O₅ and V₂O₄ regions. Lithium intercalation into these regions is considered to occur sequentially and determined by differences in group electronegativities. Open circuit voltages (OCV) have been calculated for various stoichiometric levels of lithiation using available thermodynamic data with approximate corrections. Sequestration of lithium observed in experiments is shown to be an interfacial phenomenon. X-ray photoelectron spectroscopic observation of the formation of V³⁺ even when V⁵⁺ has not been completely reduced to V⁴⁺ is shown to be entirely consistent with the proposed structural model and a consequence of initial oxygen nonstoichiometry. Based on the structural data available on V₂O₅ and its lithiated products, it is argued that the geometry of VO_n polyhedron changes from square pyramid to trigonal bipyramid to octahedron with increase of lithiation. A molecular orbital based energy band diagram is presented which suggests that lithiated vanadium oxides, Li_xV₂O₅, become metallic for high values ofx.     

GaP薄膜的制备与性能研究

利用磁控溅射法成功地制备出GaP薄膜,并对GaP薄膜的沉积速率、成分、结构及红外光学性能进行了研究。结果表明,沉积薄膜中Ga与P的原子比接近1:1,形成了GaP化合物,呈非晶态结构。设计并制备出GaP/DLC复合膜系,结果表明该膜系在8～11.5um波段对ZnS衬底具有明显的增透效果。制备的GaP薄膜的硬度明显高于ZnS衬底的硬度,且与ZnS衬底结合牢固,可提供良好的保护性能。