无定型CNx超硬薄膜的生长过程研究

利用直流磁控溅射方法,在高纯石墨衬底上沉积制备碳氮薄膜.借助于SEM对溅射沉积的碳氮薄膜微观形貌进行观察,并对碳氮薄膜的生长过程进行研究.结果表明:沉积所得的碳氮薄膜为无定型结构,且由大量的团簇所组成.在碳氮薄膜的形成过程中,先是在某些局部位置优先形成突起,继而延伸发展成棒状或纤维状结构,并桥联于相邻的CNx团簇间,伴随着这些桥联结构在径向、轴向的扩展,逐渐演变成新的团簇,并毗连成膜;同时,又不断衍生出新的突起,如此反复,实现了碳氮薄膜的持续增厚或生长.     

离子束辅助真空电弧沉积TiO_(2-x)N_x薄膜及抗菌性能研究

采用离子束辅助真空电弧沉积技术在玻璃衬底上制备了氮掺杂的TiO_2薄膜样品,通过X射线衍射(XRD)、XPS以及UV-Vis分光光度计等测试手段对离子束辅助沉积样品的结构、表面成分及抗菌活性进行了分析,研究了经离子束辅助沉积氮掺杂的TiO_2薄膜的抗菌性能。结果表明:离子束辅助沉积的氮掺杂的TiO_3薄膜为非晶态结构,热处理后向锐钛矿转变,出现(101)面的择优取向。离子束流越大,TiO_(2-x)N_x薄膜红移的越少;抗菌活性随着离子束流的增加而减弱,但离子束辅助沉积的掺氮TiO_2薄膜抗菌活性均比传统真空电弧沉积的薄膜抗菌活性高。离子束辅助沉积的掺氮TiO_2薄膜对大肠杆菌、金黄色葡萄球菌自然光照的抑菌率的抗菌率均可达99.9%以上。     

离子束辅助磁控溅射制备类石墨碳膜的结构与性能研究

采用离子束辅助磁控溅射技术(IBMSD)制备了高硬度、低电阻率的类石墨碳膜(GLC), 用TEM和XRD考察其组成相, 用XPS、FTIR和电阻率间接确定其碳键结构, 并测定了不同气体和离子能 量辅助轰击下制备的几组薄膜的沉积速率、成分、硬度和粗糙度等. 结果表明: 采用IBMSD制备的GLC是一种以sp²键为主的非晶硬质碳膜. CH₄辅助轰击较Ar有利于提高沉积速率. 辅助轰击能量的增大使薄膜表面粗糙度先减小后增大, 硬度的变化一定程度上与粗糙度相关.     

基体偏压对HiPIMS制备非晶碳膜结构和光电性能的影响

采用高功率脉冲磁控溅射(Hi PIMS)工艺在单晶硅和石英基体上沉积a-C膜,研究了基体偏压对其结构和光电性能的影响。结果表明,基体偏压的变化能显著改变薄膜的微观结构。在偏压为0~-300 V条件下制备的a-C膜,sp~2的含量均为(52.5±1.5)%,基本不变。偏压为-50 V时sp~2团簇的尺寸达到最大值(约1.93 nm),薄膜的光学带隙(0.15 e V)和电阻率(0.32Ω·cm)达到最小值;偏压继续提高则sp~2团簇的尺寸先减小后增加,光学带隙和电阻率先增加后减小,符合非晶碳膜的团簇模型。HiPIMS工艺制备的非晶碳薄膜,其sp~2团簇的尺寸决定了薄膜光学和电性学能。薄膜sp~2团簇尺寸越大,则光学带隙和电阻率越小。     

PECVD制备掺氮类金刚石薄膜的电化学特性

利用混合离子束系统,通过辉光放电等离子体增强化学气相沉积(PECVD)方法制备出类金刚石薄膜(DLC)和掺氮类金刚石薄膜(N-DLC),用可见拉曼光谱、X射线光电子能谱和扫描探针显微镜表征薄膜微观结构和表面形貌,采用电化学工作站测量了薄膜的电化学性能。结果表明,DLC薄膜的表面光滑致密、粗糙度低,掺氮增加了薄膜中的sp2团簇相并形成了C-N键,并使C-O键含量和薄膜表面的活性位点增加。N-DLC薄膜电极在硫酸溶液中的电化学势窗达4.5 V和较低的背景电流(0.3±0.2μA/cm2);在铁氰化钾溶液中电极的电流响应明显,表现为受扩散控制的准可逆过程。电极具有很好的重复性和稳定性。     

团簇离子束技术的应用进展

薄膜的制备方法对薄膜的性能和应用有很大影响,精密的电子器件、光学装置等越来越需要高品质的薄膜,这些都需要采用先进的制备方法来制备.结合近年来实验、计算机模拟及理论计算等各方面的研究结果,对应用团簇离子束法制备薄膜及研究团簇粒子方面的研究进展进行了评述,分析了影响薄膜性能的因素,并初步探讨了其成膜机理及团簇粒子的性质.     

离子束辅助脉冲激光沉积硼碳氮薄膜

以烧结B4C为靶材料、在氮离子束辅助下用脉冲激光沉积方法制备了三元化合物硼碳氮（BCN）薄膜.用X光电子谱和傅立叶变换红外谱方法表征了制备的薄膜.结果表明,膜层中包含B-C、N-C、B-N键等复合结构,以B-C-N原子杂化的形式结合成键,而并非各种成分的简单混合.还探讨了成膜过程和相关机理,离子束中的活性氮有效地和脉冲激光对B4C靶烧蚀产生的硼和碳结合成键,氮离子束的辅助还能在一定程度上抑制氧杂质进入膜层,给衬底适当加温有利于提高氮的含量并影响薄膜的化学结构.     

新型工艺制备ZnO薄膜的结构与形貌研究

采用了一种新型工艺制备ZnO薄膜。新工艺采用二步法,首先在N型Si(100)衬底上用离子束沉积溅射一层金属Zn膜,然后通过热氧化金属Zn膜制备ZnO薄膜。通过X射线衍射、原子力显微镜对不同制备工艺下的ZnO薄膜进行结构与形貌的分析比较。研究表明,Zn膜的离子束溅射沉积时间、热氧化时间和辅助枪的离子束对热氧化后的ZnO薄膜再轰击处理对ZnO薄膜的结构与形貌都会产生影响。     

离子束增强反应磁控溅射低温快速沉积AlN膜

本文采用氮离子束增强反应磁控溅射,在低温下沉积了 AlN 薄膜.用 X 射线衍射和 X 射线光电子谱对薄膜的晶体结构和电子结构进行了分析,结果表明,随着离子源中氮离子束流的增加,薄膜组成由面心立方的 Al 转变为密排立方的 AlN.氮离子在薄膜制备中的引入,有效地降低了沉积温度,提高沉积速率,并实现了薄膜 N/Al 化学计量比的控制.对 AlN 薄膜的紫外-可见光透射谱和红外吸收谱也进行了测定.     

低能氮离子束辅助真空电弧沉积Zr-Cu-N薄膜的研究

利用等离子体辅助真空电弧沉积技术,在高速钢和单晶硅基体上制备Zr-Cu-N复合薄膜.采用X射线衍射仪(XRD)、扫描电镜(SEM)和超微显微硬度计研究了低能氮离子束流对Zr-Cu-N涂层结构、表面形貌和硬度的影响.结果表明:用低能氮离子束辅助真空电弧沉积Zr-Cu-N膜,ZrN结构在(111)晶面出现择优取向,并对Zr-Cu-N膜层有一定的强化作用,膜层表现出较高的显微硬度和转好的耐磨性能.     

Ion beam reactively sputtered silicon nitride coatings

An ion beam source was used to deposit silicon nitride films by reactive sputtering a silicon target with an Ar+N₂ beam. The nitrogen fraction in the sputtering gas was 0.05 to 0.80 at a total pressure of 6 to 20×10^?5 torr. The ion beam current was 50 mA at 500 V. A rate of deposition of about 2 nm min^?1 (0.12 μm h^?1) was found, and the spectra indicated that Si₃N₄ was obtained for a fraction of nitrogen higher than 0.50. However, the AES spectra also indicated that the sputtered silicon nitride films were contaminated with oxygen and carbon and contained significant amounts of iron, nickel, and chromium, most probably sputtered from the holder of the substrate and target.     

Effect of microstructure on degradation of AlN films prepared by ion beam assisted deposition

Two kinds of aluminum nitride (AlN) films were prepared by ion beam assisted deposition (IBAD) by changing the nitrogen ion beam energy; one was deposited with a 0.2 keV ion beam, showing a columnar structure, and the other was deposited with a 1.5 keV ion beam, showing a granular structure. The effect of microstructure on degradation of AlN films was studied by immersing them in aqueous HNO₃, HCl, and NaOH solutions at room temperature. Degradation was examined mainly in terms of changes in optical transmittance and surface morphology. After immersion in HNO₃ and HCl solutions, the average transmittance of the columnar film decreased gradually from the beginning of immersion, while that of the granular film maintained the initial level of transmittance for about 60 h immersion in HNO₃ solution and about 80 h immersion in HCl solution. In NaOH solution, both films were detached readily from the substrate and no remarkable difference in the degradation behavior was observed between the two films. It is concluded that the IBAD AlN films with the granular structure show higher durability against aqueous acid solutions than the films with the columnar structure.     

离子束辅助沉积TiN薄膜的结构和成分

用离子束辅助沉积合成了TiN薄膜,背散射、X射线衍射和透射电镜实验的结果表明,在本实验条件下,薄膜Ti/N比接近于TiN的化学计量比,和氮离子束流密度无关。薄膜存在<100>择优取向,在一定条件下,可以形成只有(100)取向的TiN薄膜。     

Niederenergie-IBAD: Zusammenhang zwischen Prozeßparametern und Schichteigenschaften bei ionenstrahlunterstützten Aufdampf-und Sputtertechniken

Low energy IBAD: correlation between process parameters ans film properties for ion beam assisted evaporation and sputter deposition Binary nitride films with Al, Cr and Ti as metal components have been deposited with ion beam assisted evaporation and sputtering (IBAD) and the film properties are investigated in terms of the individual deposition parameters. In the case of ion beam assisted evaporation the flux ratio between the film forming metal atoms and the nitrogen ions from the ion source was shown to enable a quantitative control of the composition and the chemical phases of the films. Detailed studies for TiN reveal the possibilities to manipulate texture and stress, the average grain size and the morphology of the films. Such results are discussed with an extended structure zone model, introducing the energy input per film forming particle as the relevant parameter. Also, the structural film properties and the deposition parameters are quantitatively correlated with the hardness and the beginning of TiN deposition on stainless steel resulted in distinctly improved adhesion properties. For the deposition of TiN with a dual ion beam arrangement in which one beam bundle was directed onto a Ti-target and an other onto the substrate with the growing film, a strong influence of the particle energies and the incidence angles on the film texture and its directional orientation was found. Such effects are quantitatively related to the minimization of the free energy of the films and the influence of preferential re-sputtering effects. For ion beam sputter deposition without simultaneous ion bombardment of the growing film, the texture and the film stress are found to be controlled by energetic particles resulting from elastic backscattering at the target surface.     

The effect of the ion beam energy on the properties of indium tin oxide thin films prepared by ion beam assisted deposition

Indium tin oxide (ITO) thin films have been deposited onto polycarbonate substrates by ion beam assisted deposition technique at room temperature. The structural, optical and electrical properties of the films have been characterized by X-ray diffraction, atomic force microscopy, optical transmittance, ellipsometric and Hall effect measurements. The effect of the ion beam energy on the properties of the films has been studied. The optical parameters have been obtained by fitting the ellipsometric spectra. It has been found that high quality ITO film (low electrical resistivity and high optical transmittance) can be obtained at low ion beam energy. In addition, the ITO film prepared at low ion beam energy gives a high reflectance in IR region that is useful for some electromagnetic wave shielding applications.     

Structural, morphological, and mechanical properties of amorphous carbon and carbon nitride thin films deposited by reactive and ion beam assisted laser ablation

Amorphous carbon nitride thin films have been prepared on Si (100) wafers by nitrogen ion beam assisted Nd:YAG laser ablation techniques. Amorphous carbon and carbon nitride films have also been prepared by the conventional laser ablation techniques for comparison. Raman spectroscopy and spectroscopic ellipsometry have been performed for the films to analyze structural properties, atomic force microscopy to observe surface morphologies, and scratch, acoustic emission, and Vicker hardness test to examine mechanical properties. The amorphous carbon nitride films deposited by the ion beam assisted laser ablation techniques had generally better mechanical properties compared to the amorphous carbon films and amorphous carbon nitride films deposited in N₂ atmosphere. The amorphous carbon nitride films deposited at optimum ion beam current of 10 mA and laser power density of 1.7 × 10⁹ W/cm² showed excellent mechanical properties: root mean square surface roughness of 0.33 nm, friction coefficient of 0.02–0.08, the first crack and critical load of 11.5 and 19.3 N respectively, and Vicker hardness of 2300 [Hv]. It is considered that the films have high potential for protective coatings for microelectronic devices such as magnetic data storage media and heads.     

用PBⅡ方法在硼膜中注入氮形成BN的结构

用电子束蒸发纯硼,在硅片上沉积不同厚度的硼膜,然后用等离子体基离子注入（ＰＢⅡ）技术在硼膜上主入氮以形成氮化硼（ＢＮ）,用ＸＰＳ分析膜的成分深度分布及化学价态;用傅里叶变换红外（ＦＴＩＲ）透射谱分析膜的结构。氮在膜中呈类似高斯分布,随着注入电压增大,膜的Ｎ／Ｂ比增大且影响氮在膜中的分布,在较高的注入电压时,膜基间产生界面混合,对ＸＰＳＢｌｓ谱进行Ｇａｕｓｓ－ｏｒｅｎｔｚ拟合表明,硼在膜中以ＢＮ及游     

Effects of bombardment on optical properties during the deposition of silicon nitride by reactive ion-beam sputtering

Thin silicon nitride (Si(1_x)N(x)) films were synthesized without substrate heating by means of reactive argon-ion sputtering of either silicon or a silicon nitride target in the 1000-1500-eV energy range at a nitrogen partial pressure of 1.3 × 10(-2) Pa and with simultaneous nitrogen ion-assisted bombardment in the 300-500-eV low energy range. The extinction coefficient and refractive index of the films were directly dependent on the N(+) ion-to-atom arrival ratio, assisted ion energy, film growth rate, and indicated a correlation with film stoichiometry and disorder. Si(3)N(4) films were obtained for N(+) ion/Si atom arrival ratios from 0.6 to 1.7 and for different Si:N atom arrival rates and had a refractive index as high as 2.04 (633 nm) and a low hydrogen content as indicated by IR spectra.     

Imaging reflectometry in situ

An innovative method of in situ real-time optical monitoring of thin film deposition and etching is presented. In this technique, intensity maps of a thin film corresponding to a series of wavelengths selected by a monochromator (300-800 nm) are recorded by a CCD camera. From the maps the reflectance spectra at individual points of the sample surface can be extracted. By fitting the reflectance spectra to the theoretical ones, the maps of a thin film morphology (including optical parameters) and their temporal development during technological processes can be obtained. The method was tested by in situ observation of the growth of silicon nitride and silicon oxide thin films prepared by ion beam sputtering and by the monitoring of etching of thermally grown SiO(2) thin films.