半绝缘InP的铁掺杂激活与电学补偿

比较了掺Fe和非掺退火半绝缘(SI)InP材料中Fe杂质的分布,掺杂激活机理以及Fe原子与点缺陷的相互作用.原生掺Fe SI-InP中Fe的替位激活主要通过填隙-跳跃机制,但Fe原子易在位错周围聚集,与空位形成复合体缺陷,占据填隙位等,从而降低Fe的激活效率.在FeP2气氛下退火非掺InP获得的SI-InP材料中,Fe原子的激活主要通过扩散过程的"踢出-替位"机制.退火前材料中存在的In空位使Fe原子通过扩散充分占据In位,同时抑制了材料中深能级缺陷的形成.因此,这种SI-InP材料的Fe激活效率高、电学性能好.     

半绝缘InP的铁掺杂激活与电学补偿

比较了掺Fe和非掺退火半绝缘(SI)InP材料中Fe杂质的分布,掺杂激活机理以及Fe原子与点缺陷的相互作用.原生掺Fe SI-InP中Fe的替位激活主要通过填隙-跳跃机制,但Fe原子易在位错周围聚集,与空位形成复合体缺陷,占据填隙位等,从而降低Fe的激活效率.在FeP2气氛下退火非掺InP获得的SI-InP材料中,Fe原子的激活主要通过扩散过程的"踢出-替位"机制.退火前材料中存在的In空位使Fe原子通过扩散充分占据In位,同时抑制了材料中深能级缺陷的形成.因此,这种SI-InP材料的Fe激活效率高、电学性能好.     

折射率可调的二维光子晶体设计与特性

光子晶体在传感、滤波和光子晶体激光器等方面具有很重要的应用价值。设计了一种基于改变缺陷介质折射率的可调谐二维正方晶格和三角晶格光子晶体激光器微腔,在平面光子晶体薄板中引入点缺陷磷酸氧钛钾(KTP),在KTP两端施加交流电场控制KTP晶体折射率变化。实验中随着KTP晶体折射率逐渐增大,正方晶格光子晶体禁带数量减少,归一化频率减小,禁带宽度基本不变;而三角晶格光子晶体禁带逐渐变窄,且向低频方向移动。最后,用平面波展开法分析了晶体的能带结构,得到理论上的描述,验证了实验结果。     

用交流方法消除霍尔效应中的副效应问题的探讨

在研究半导体材料中霍尔效应有着广泛的应用.用它来研究半导体材料导电过程,对提供材料的导电类型,载流子浓度、杂质电离能(包括深、浅能级杂质)、禁带宽度、迁移率及杂质补偿度等方面有着重要的作用.本文着重研究霍尔效应中的副效应及其消除方法的探讨,以减少上述测试中所引进不应有的误差等.     

掺铁半绝缘磷化铟的深能级研究

文章简要地叙述了光激电流瞬态谱(PICTS)及恒流光电导(CCPC)设备的建立过程及测量方法。并首次用二种方法结合起来以研究掺铁半绝缘磷化铟(InP)中深能级的热电离能,载流子的发射与俘获特性,杂质波函数的局域程度及电子与晶格之间的相互作用。并给出了铁能级在禁带中的确切能量位置。     

ZnO及其缺陷电子结构对光谱特性的影响

利用全势LMTO(FP-LMTO)理论计算方法,对ZnO中的某些缔合缺陷(如氧空位和锌填隙、锌填隙和锌空位及锌的氧反位缺陷)的电子结构进行了计算.根据本文和以前的计算结果,得到了ZnO中几种本征点缺陷对应的缺陷态能级位置.利用得到的理论计算结果,我们分析了ZnO的吸收和发射光谱可能产生的机制,并讨论了ZnO与缺陷电子结构对它们的影响.     

杂质对离子注入射程端缺陷的影响

本文研究了注入杂质对预非晶化硅的射程端缺陷的影响.提出:在固相外延时,来自非晶层内的空位与来自射程端的硅间隙原子形成相向扩散流.注入的杂质可以俘获点缺陷,从而影响了点缺陷的相向扩散流,P促进射程末端缺陷的分解,而B促进其聚结.     

中子辐照损伤区对硅少数载流子寿命的影响

中子辐照在半导体硅晶体中形成无序区,使其电学性能受到严重影响.本文根据无序区基本特征,系统分析中子辐照对少数载流子寿命影响的过程,给出了一个完整自洽的计算表达式;理论计算了材料掺杂浓度、无序区辐照缺陷分布态,以及载流子注入量等参量对少数载流子寿命的影响.最后,将计算结果与点缺陷模型、及实验测量数量进行比较和讨论.     

紧束缚法计算GaAs-GaP超晶格的能带结构及电子的有关性质

本文使用紧束缚法研究了GaAs-GaP超晶格的能带结构和电子的有关性质.久期方程的矩阵元中包括了一直到次近邻的原子轨道间的相互作用积分.本文计算了超晶格(GaAs)1-(GaP)_1布里渊区中三条主要对称线上的能带;计算了超晶格(GaAs)m-(GaP)n在Γ点、X点和M点的能带值,这里m+n≤10;讨论了m=n时禁带宽度随周期长度的变化、周期长度不变时组分变化对禁带宽度的影响以及在几个典型的单电子状态中电子处于各个原子上的几率.     

氧含量对VO2-x晶格特性和结构相变影响的研究

采用沉淀法制备了氧含量不同的VO2-x纳米粉．对样品进行了差式扫描量热(DSC)、X-射线衍射(XRD)和透射电子显微镜(TEM)的测试，并结合第一性原理的计算结果，具体分析了氧含量对氧化钒纳米粉的晶格特性和结构相变造成的影响：缺氧样品中形成钒填隙，富氧样品中形成氧填隙，两种缺陷分别造成晶胞体积的膨胀；缺陷带来的各向异性造成晶粒形状的改变；同时，不同缺陷态造成的能带中电子状态的改变也可能成为影响氧化钒的结构相变特性的重要因素之一．     

透明导电膜中光吸收边的移动

半导体材料的禁带宽度不但决定了材料的原子组成和成键状态，而且还受到固体内部缺陷和外部掺杂的影响。这些杂质和缺限作为施主（或受主）产生自由载流子从两方面改变材料的带隙。一是高浓度载流子使费米能级移进导带产生所谓的Ｂｕｒｓｔｅｉｎ移动使带隙变宽，二是电荷之间的相互作用产生的自能或导带与杂质带的重叠使带隙变窄，本文以ＺｎＯ，ＳｎＯ２，Ｉｎ２Ｏ３等氧化物半导体制成的透明导电膜为例回顾近些年来得到的宽禁带半     

Changes in the state of phosphorus atoms in the silicon lattice as a result of interaction with radiation defects

Interaction of radiation defects with phosphorus atoms in silicon crystals subjected to electron irradiation and thermal treatments was studied under conditions of various degrees of supersaturation with respect to the equilibrium concentration of impurities and point defects. It is shown that, in the course of silicon irradiation, the electron-dose dependences of the phosphorus concentration at the lattice sites (P_s) level off (tend toward a constant value). This constant value is governed by the irradiation temperature. The stages of recovery of the concentration P_s as a result of heat treatments correlate with temperature intervals of dissociation of the vacancy complexes. The results indicate that there are two processes. One process involves the interaction of dopant atoms with silicon self-interstitials and the emergence of interstitial complexes; i.e., this process corresponds to the radiation-stimulated decomposition of a supersaturated solution of an impurity as a result of point-defect generation and ionization. The other process consists in the recombination of interstitial impurities with vacancies at sufficiently high temperatures or in the annihilation of vacancies released during heat treatments with interstitial atoms incorporated into composite defect complexes with the involvement of phosphorus atoms.     

快速热退火在Si中引入缺陷的研究(英文)

The deep-level defects are introduced into n-type silicon by rapid thermal annealing (RTA). The kinds of the defects and thier densities vary with rapid annealing temperature. The minority carrier lifetime is reduced rapidly due to these defects. There are two kinds of the defects: one is related to the metal impurity frozen into the crystal lattice defect: which can be removed by subsequent annealing near 650℃, the other is related to the intrinsic defect of the crystal, which remains after subsequent annealing. Our results show that latter is associated with dislocation.     

Physical mechanism of resistance switching in the co-doped RRAM

The physical mechanism of the resistance switching for RRAM with co-doped defects (Ag and oxygen vacancy) is studied based on the first principle calculations and the simulation tool VASP. The interaction energy, formation energy and density of states of Ag and oxygen vacancy defect (V_O) are calculated. The calculated results reveal that the co-doped system is more stable than the system only doped either Ag or V_O defect and the impurity energy levels in the band gap are contributed by Ag and V_O defects. The obtained partial charge density confirmed further that the clusters are obvious in the direction of Ag to Hf ions, which means that it is Ag but V_O plays a role of conductive paths. For the formation mechanism, the modified electron affinity and the partial charge density difference are calculated. The results show that the ability of electron donors of Ag is stronger than V_{m O} In conclusion, the conductivity of the physical mechanism of resistance switching in the co-doped system mainly depends on the doped Ag.     

Interstitial carbon formation in irradiated copper-doped silicon

The influence of a copper impurity on the spectrum of defects induced in p-Si crystals containing a low oxygen concentration by irradiation with electrons with an energy of 5 MeV at room temperature is studied by deep-level transient spectroscopy. It is found that interstitial carbon atoms (C _i ) which are the dominant defects in irradiated samples free of copper are unobservable immediately after irradiation, if the concentration of mobile interstitial copper atoms (Cu _i ) is higher than the concentration of radiation defects. This phenomenon is attributed to the formation of {Cu _i , C _i } complexes, which do not introduce levels into the lower half of the band gap. It is shown that these complexes dissociate upon annealing at temperatures of 300–340 K and, thus, bring about the appearance of interstitial carbon.

     

Influence of carrier freeze-out on SiC Schottky junction admittance

Incomplete impurity ionization is investigated in the case of nitrogen donors and aluminum and boron acceptors in 4H and 6H SiC. We calculate the degree of ionization for these impurities residing on different lattice sites in a broad temperature range and for different impurity concentrations. It is shown that the degree of carrier freeze-out is significant in heavily N-doped 6H SiC and in Al- and B-doped SiC. Using the general Schottky junction admittance model we calculate the temperature and frequency dependencies of the junction admittance in the case when impurity ionization by the applied ac bias is present. It is shown that admittance frequency dispersion may be significant at room temperature in the case of N- and B-doped SiC. Finally, we calculate the Schottky junction capacitance as a function of the applied dc bias and simulate the doping profile, using the capacitance-voltage data. The calculated profile is shown to deviate from the actual impurity concentration profile if the impurity ionization time constant is comparable with the ac bias period, which is so for N-and B-doped SiC with certain values of the impurity activation energy and capture cross-section.     

Structural and energy characteristics of native vacancy-type defects in the biaxially stressed GaN lattice

For biaxially stressed GaN clusters, the structure, charges, and energies of the formation of intrinsic Ga and N vacancies are calculated by the quantum-chemical method in the SCF MO LCAO approximation taking into account relaxation of the crystalline surroundings. It is established that the use of substrates introducing compressive or tensile stresses into the epitaxial layer affects the concentrations of intrinsic vacancy-type point defects. This effect most clearly manifests itself in the nitrogen sublattice in the GaN crystal lattice, especially in the case of its tension, i.e., during the epitaxial grown of GaN on the Si substrate. Redistribution of the electron density in the defect region in the case of lattice compression or tension can be the cause of variation in the location of electronic levels of defects in the band gap of the crystal.     

Transport equations in heavy doped silicon

The general transport equations in a heavy doped semiconductor are given, taking the position-dependent band structure into account. An intrinsic concentration depending on the doping levels is introduced. This quantity allows us to use the classical equations in a slightly modified form, if Maxwell-Boltzmann statistics can be applied for one or both kinds of the carrier. The total density of states in a heavy doped semiconductor is assumed to be the envelope of the density of states of the conduction (valence) band and impurity band. The effect of the skewness of the impurity band is included. The Fermi level and the effective intrinsic carrier concentration are calculated for this total density of states function. Experimental evidence for the calculated values is given.     

杂质和空位对AlAs/GaAs超晶格电学性质的影响

在紧束缚近似基础上,本文采用Recursion方法首次计算了含有杂质和空位的短周期AlAs/GaAs超晶格电子结构。局域态密度和分波态密度的计算结果清楚地反映了少量无序杂质和空位在AlAs/GsAs中的局部细节以及对材料本身电学性质的影响。在具有点缺陷(杂质或空位)的AlAs/GaAs材料能隙中将出现新能级,本文计算了它们的位置。同时利用对原子价的讨论发现体内点缺陷周围存在一个电中心,而界面点缺陷产生一个局域电场,它将导致电荷分布的转移。比较了杂质和空位的影响,并进一步证明在所有情况下它们的作用是高度局域的。     

激光脉冲照射硅时若干物理量的计算

本文计算了由毫微秒和微微秒激光脉冲照射而在硅晶体中产生的晶格温度、载流子浓度和载流子温度的时间演变和空间分布,本文用PDECOL软件包计算一组关于晶格温度、载流子浓度、载流子温度和激光强度的偏微分方程组的数值解。计算表明,热载流子的能量弛豫时间应为1ps或小于1ps,计算的熔化阈值与发表的实验结果是一致的。