Synthesis and optical properties of CeO<Subscript>2</Subscript> nanocrystalline films grown by pulsed electron beam deposition

The nanocrystalline cerium dioxide (CeO₂) thin films were deposited on soda lime (SLG) and Corning glass by pulsed e-beam deposition (PED) method at room temperature. The structure of the produced CeO₂ thin films was investigated by X-ray diffraction (XRD) analysis, X-ray photoelectron spectroscopy (XPS), and micro Raman spectroscopy. The surface topography of the films was examined by atomic force microscopy (AFM). Film thickness and growth morphologies were determined with FEG-SEM from the fracture cross sections. XPS studies gave a film composition composed of +4 and +3 valent cerium typical to nanocrystalline ceria structures deficient in oxygen. The ceria films were polycrystalline in nature with a lattice parameter (a) of 0.542 nm. The Raman characteristics of the source material and the films deposited were very similar in character. Raman lines for thin film and bulk CeO₂ was observed at 465 cm⁻¹. The optical properties of the CeO₂ films were deduced from reflectance and transmittance measurements at room temperature. From the optical model, the refractive index was determined as 1.8–2.7 in the photon energy interval from 3.5 to 1.25 eV. The optical indirect band gap (E _g) of CeO₂ nanocrystalline films was calculated as 2.58 eV.     

Synthesis and Optical Studies of Superconducting MgB<Subscript>2</Subscript> Thin Films

Synthesis and optical transmission of MgB₂ thin films on optically transparent glass are reported. In the 400–1000 nm regime as deposited films show high metallic reflectivity and very little transmission. After deposition, the films were annealedex situ and rendered superconducting withT _c of 38 K, approaching that of the bulk material. The reaction conditions where quite soft ∼ 10 min at 550°C. The optical absorption coefficient,α and photon energy,E followed a Tauc-type behavior, (αE)^1/2=β _T(E −E _g). The band gap (E _g) was observed to peak at 2.5 eV; but, the slope parameterβ _Tbehaved monotonically with reaction temperature. Our results indicate that an intermediate semiconducting phase is produced before the formation of the superconducting phase; also optical measurements provide valuable information in monitoring the synthesis of MgB₂ from its metallic constituents. In addition these films have interesting optical properties that may be integrated into optoelectronics.     

Optical and structural properties of ZnO + Zn<Subscript>2</Subscript>TiO<Subscript>4</Subscript> thin films prepared by the sol–gel method

ZnO + Zn₂TiO₄ thin films were obtained by the sol–gel method using precursor solutions with different Ti/Zn ratios in the 0.18–2.13 range. The films were deposited on glass substrates and annealed in an open atmosphere at 550 °C. The oxide was characterized by X-ray diffraction and photoacoustic (PA) spectroscopy. The films were constituted of polycrystalline ZnO for the lowest Ti/Zn ratio (0.18), polycrystalline Zn₂TiO₄ for the 0.70 and 1.0 ratios, and mixes of both oxides for the intermediate ratios (0.32 and 0.50). For the highest ratios studied (1.44 and 2.13), the films were amorphous. The energy band gap (E_g) values were determined from optical absorption spectra, measured by means of the PA technique spectra. E_g varied in the 3.15 eV (ZnO) to 3.70 eV (Zn₂TiO₄) range.     

ITO substrate resistivity effect on the properties of CuInSe<Subscript>2</Subscript> deposited using two-electrode system

The purpose of this work is to deposit the CuInSe₂ films on the ITO substrate by electrodeposition technique using a simplified two electrodes system and to investigate the effect of ITO sheet resistance on the fundamental properties of the resulting films. The as deposited films were annealed under argon atmosphere at 300 °C during 30 min. The structural, morphological and electrical properties were characterized respectively by means of X-ray diffraction (XRD), scanning electron microscopy (SEM) and electrical resistivity measurements. The optical band gap of samples was estimated using the optical absorption technique. After annealing, the XRD spectra show diffraction peaks corresponding to the single-phase chalcopyrite CuInSe₂ with (112) as main reflection. The SEM images reveal a homogeneous surface and the estimated grain size was calculated from Scherrer’s Equation with (112) peak lay in the range of 165–272 Å. The band gap, E _g, is a decreasing function with the ITO sheet resistance.     

Study of surface morphology and optical properties of Nb<Subscript>2</Subscript>O<Subscript>5</Subscript> thin films with annealing

Nb₂O₅ films have been deposited on variety of substrates using the sol-gel dip coating technique. As-deposited films on all substrates are amorphous. Films were annealed under controlled ambience at 300, 400 and 600°C for 5 h. As-deposited films on glass substrate show uniform surface structure. The crystal structure and surface topography are found to depend strongly on the annealing temperature and nature of the substrates. The average grain size of 40 nm is observed in films annealed at 300°C. On annealing at 400°C increasing grain size and resulting fusing of them, enhanced surface roughness. Films deposited on NaCl substrates crystallized into a stable monoclinic phase and those deposited on single crystal Si substrates crystallized into hexagonal phase after annealing at 600°C. The as-deposited films show very high transmittance (>90%) in the visible region. The optical band gap is observed to increase from 4.35 eV when the films are in amorphous state to 4.87 eV on crystallization.     

Deposition and optoelectronic properties of ITO (In<Subscript>2</Subscript>O<Subscript>3</Subscript>:Sn) thin films by Jet nebulizer spray (JNS) pyrolysis technique

Nanocrystalline ITO thin films were deposited on glass substrates by a new spray pyrolysis route, Jet nebulizer spray (JNS) pyrolysis technique, for the first time at different substrate temperatures varying from 350 to 450 °C using a precursor containing indium and tin solution with 90:10 at% concentration. The structural, optical and electrical properties have been investigated as a function of temperature. X-ray diffraction analysis showed that the deposited films were well crystallized and polycrystalline with cubic structure having (222) preferred orientation. The optical band gap values calculated from the transmittance spectra of all the ITO films showed a blue shift of the absorbance edge from 3.60 to 3.76 eV revealing the presence of nanocrystalline particles. AFM analysis showed uniform surface morphology with very low surface roughness values. XPS results showed the formation of ITO films with In³⁺ and Sn⁴⁺ states. TEM results showed the nanocrystalline nature with grain size about 12-15 nm and SAED pattern confirmed cubic structure of the ITO films. The electrical parameters like the resistivity, mobility and carrier concentration are found as 1.82 × 10⁻³ Ω cm, 8.94 cm²/Vs and 4.72 × 10²⁰ cm⁻³, respectively for ITO film deposited at 400 °C. These results show that the ITO films, prepared using the new JNS pyrolysis technique, have the device quality optoelectronic properties when deposited under the proposed conditions at 400 °C.     

Synthesis and photoluminescence properties of LiEu(W,Mo)<Subscript>2</Subscript>O<Subscript>8</Subscript>:Bi<Superscript>3+</Superscript> red-emitting phosphor for white-LEDs

LiEu_1−x (W_2−y Mo _y )O₈:xBi³⁺ series red-emitting phosphors were synthesized by solid state reaction. The structure, morphology, and photoluminescent properties of phosphors were studied by X-ray powder diffraction, scanning electron microscopy, and photoluminescence spectrum, respectively. X-ray powder diffraction analysis showed that the as-obtained phosphors belong to the scheelite structure. The average particle size of the investigated phosphor was about 8 μm. The excitation spectrum exhibits a charge-transfer broad band along with some sharp peaks from the typical 4f–4f transitions of Eu³⁺. Under excitation of UV, near-UV, or blue light, these phosphors showed strong red emission at 615 nm due to ⁵D₀–⁷F₂ transition of Eu³⁺. The incorporation of Mo⁶⁺ into LiEuW₂O₈:Bi³⁺ could induce red-shift of the charge-transfer broad band and a remarkable increase of photoluminescence. The highest red-emission intensity was observed with LiEu_0.80Mo₂O₈:0.20Bi³⁺. Compared with the commercial red-emitting phosphor, Y₂O₂S:Eu³⁺, the emission intensity of LiEu_0.80Mo₂O₈:0.20Bi³⁺ phosphor is much stronger than that of Y₂O₂S:Eu³⁺ and its chromaticity coordinates are closer to the standard values than that of the commercial phosphor. The optical properties of LiEu_0.80Mo₂O₈:0.20Bi³⁺ phosphor make it attractive for the application in white-light-emitting diodes (LEDs), in particular for near-UV InGaN-based white-LEDs.     

Structural,optical and microscopic properties of chemically deposited In<Subscript>2</Subscript>Se<Subscript>3</Subscript> thin films

Solar cell technologically important binary indium selenide thin film has been developed by relatively simple chemical method. The reaction between indium chloride, tartaric acid, hydrazine hydrate and sodium selenosulphate in an aqueous alkaline medium at room temperature gives deposits In₂Se₃ thin film. Various preparative parameters are discussed. The as grown films were found to be transparent, uniform, well adherent, red in color. The prepared films were studied using X-ray diffraction, scanning electron microscopy, atomic absorption spectroscopy, Energy dispersive atomic X-ray diffraction, optical absorption and electrical conductivity properties. The direct optical band gap value E_g for the films was found to be as the order of 2.35 eV at room temperature and having specific electrical conductivity of the order of 10⁻² (Ω cm)⁻¹ showing n-type conduction mechanism. The utility of the adapted technique is discussed from the point of view of applications considering the optoelectric and structural data obtained.     

Effect of Ba(Ti<Subscript>(0.9)</Subscript>Sn<Subscript>0.1</Subscript>)O<Subscript>3</Subscript> ceramic doping on optical,thermal and dielectric properties of polycarbonate host

Ba(Ti_(0.9)Sn_0.1)O₃ (BTS) ceramic was prepared by a conventional ceramic processing. BTS-polycarbonate (PC) composites were prepared at different BTS concentrations by weight in order to study their optical and dielectric properties. The absorption coefficient (α) was determined in the wavelength range from 250–600 nm at room temperature for all BTS-PC composites. The optical gap (E _opt) was also determined for BTS-PC composites. The variation of the absorption coefficient (α) and optical gap (E _opt) with BTS content are reported. It was found that BTS ceramic highly enhances the UV absorption of PC host at 300 nm. The optical gap decreases up to the value of 3.93 eV as BTS content increases up to 35 wt% and this was attributed to the formation of localized states in the forbidden gap. The relative dielectric permittivity, dielectric loss and loss tangent were measured at temperature range from room temperature up to 150°C and at frequency values 1 kHz, 10 kHz and 50 kHz. Addition of BTS to PC host, however, will increase relative dielectric permittivity, dielectric loss and loss tangent. Besides, increasing of temperature will also increase relative dielectric permittivity, dielectric loss and loss tangent especially above the glass transition temperature of PC host and this behaviour was attributed to the segmental motion of polymer chains. On the other hand, this study shows that there is a good agreement between SEM, DSC and dielectric results and also between optical gap and a.c. conductivity results. Moreover, SEM and DSC results reveal that addition of BTS ceramic particles to PC host will reduce the physical bond between polymer chains or may be will increase the free volume in the polymer host and consequently will enhance the segmental motion of polymer chains and this behaviour is independent of ceramic phase.     

Crystallization kinetic studies of CaBi<Subscript>2</Subscript>B<Subscript>2</Subscript>O<Subscript>7</Subscript> glasses by non-isothermal methods

Transparent glasses of CaBi₂B₂O₇ (CBBO) were fabricated via the conventional melt-quenching technique. The amorphous and the glassy nature of the as-quenched samples were, respectively, confirmed by X-ray powder diffraction (XRD) and differential scanning calorimetry (DSC). The glass transition (T _g) and the crystallization parameters (crystallization activation energy (E _cr) and Avrami exponent (n)) were evaluated under non-isothermal conditions using DSC. The heating rate dependent glass transition and the crystallization temperatures were rationalized by Lasocka equation for the as-quenched CBBO glasses. There was a close agreement between the activation energies for the crystallization process determined by Augis and Bennet and Kissinger methods. The variation of local activation energy (E _c(x)) that was determined by Ozawa method increased with the fraction of crystallization (x). The Avrami exponent (n(x)) decreased with the increase in fraction of crystallization (x), suggesting that there was a changeover in the crystallization process from the bulk to the surface.     

Study of structural and optical properties of Cd1-xZnxSe thin films

Cd_1-xZn_xSe (x = 0, 0.5 and 1) thin films have been deposited onto glass substrates using thermal evaporation technique. The lattice constants, grain size, microstrain and dislocation density were studied by using X-ray diffraction. In addition the optical constants were calculated in the wavelength range 400-2500 nm. Transmittance and reflectance were used to calculate the absorption coefficient α and the optical band gap E_g. The linear relation of (αhυ)² as a function of photon energy hυ for the thin films illustrated that the films exhibit a direct band gap, which increases with increasing Zn content. This increasing of optical band gap was interpreted in accordance to the increasing in the cohesive energy. Optical constants, such as refractive index n, optical conductivity σ_opt, complex dielectric constant, relaxation time τ and dissipation factor tanδ were determined. The optical dispersion parameters E₀, E_d were determined according to Wemple and Di Domenico method.     

The Development of Microstructure and Ferroelectric Properties of Bi<Subscript>4</Subscript>Ti<Subscript>3.96</Subscript>Nb<Subscript>0.04</Subscript>O<Subscript>12</Subscript> Thin Films

Bi₄Ti_3.96Nb_0.04O₁₂ thin films were successfully deposited on Pt(111)/Ti/SiO₂/Si(100) substrates by a sol–gel method and rapid thermal annealing. The effects of Nb-substitution and annealing temperature (500–800°C) on the microstructure and ferroelectric properties of bismuth titanate thin films were investigated. X-ray diffraction analysis reveals that the intensities of (117) peaks are relatively broad and weak at annealing temperatures smaller than 700°C. With the increase of annealing temperature from 500°C to 800°C, the grain size of Bi₄Ti_3.96Nb_0.04O₁₂ thin films increases. The Bi₄Ti_3.96Nb_0.04O₁₂ thin films annealed at 700°C exhibit the highest remanent polarization (2P _r), 36 μC/cm² and lowest coercive field (2E _c), 110 kV/cm. The improved ferroelectric properties can be attributed to the substitution of Nb⁵⁺ to Ti⁴⁺ in Bi₄Ti₃O₁₂ assisting the elimination of defects such as oxygen vacancy and vacancy complexes.     

Synthesis and photoluminescence properties of Eu<Superscript>3+</Superscript>-activated SrZnO<Subscript>2</Subscript>

Synthesis, X-ray diffraction, and photoluminescence (PL) investigations of SrZnO₂ doped with Eu³⁺ were carried out in order to characterize the material. The emission spectra showed a broad band emission at 525 nm attributed to oxygen defect centers in the host matrix, along with peaks corresponding to the ⁵D₀ → ⁷F _j (j = 1, 2) transitions of Eu ion under 250 nm excitation. PL decay time studies were done to confirm these investigations. Time-resolved emission spectrometric (TRES) study was carried out to extract the emission spectra of the Eu ion which was buried under the broad band emission. After giving suitable delay times and by choosing a proper time gate, transitions due to ⁵D₀ → ⁷F _j (j = 0, 1, 2, 3, and 4) could be observed. Judd–Ofelt intensity parameters and other radiative properties for the system were evaluated from this emission spectrum and decay time data by adopting standard procedure. The color coordinates of the system were also evaluated and plotted on a standard CIE index diagram. The observations showed that the SrZnO₂:Eu³⁺material has near white light emission (also considering the emission from host) whereas, the extracted emission spectrum due to only Eu ions has a near red emission.     

Surface Waves on Superfluid <Superscript>4</Superscript>He Under Reduced Gravity

Superfluid ⁴He was produced on a small jet plane for the first time using a small GM-refrigerator to condense the liquid and a scroll pump to get the superfluid by evaporation. The surface wave on superfluid under 0.5g _E, 0.1g _E and 0.05g _E, together with 2g _E and 1g _E, was successfully examined by an optical method utilizing parabolic flight. Here, g _E is the gravitational constant on the ground. Assuming that only the fundamental mode was excited as determined by the sample cell width, the resonance peak in the frequency domain was well reproduced by the gravity wave with corresponding gravity constant.     

Preparation and electrochemical properties of nanorods and nanosheets structural Li<Subscript>4</Subscript>Ti<Subscript>5</Subscript>O<Subscript>12</Subscript> as anode for lithium ion batteries

In this study, nanorods and nanosheets structure of Li₄Ti₅O₁₂ (LTO) with higher capacity and cycle performance are prepared by hydrothermal synthesis. We can obtain different nanostructural LTO by changing heating time in autoclave and molar ratio between lithium (Li) and titanium (Ti). Precursor was calcined at 600 °C for 6 h in air after heating to 180 °C with the holding time of 12 and 24 h in Teflon-lined PTFE autoclave vessel, nanorods and nanosheets structure of LTO were prepared successfully, respectively. Specially, when the molar ratio between Li and Ti was 4.2:5, the discharge capacities were 177.7 and 230.7 mAh g^?1 at 20 mA g^?1, respectively. When the holding time was 24 h as well as molar ratio between Li and Ti was 4.2:5, the band gap was least, and this pure LTO reversible capacities reached 90.36 and 73.12% after 200 and 3000 cycles at 100 mA g^?1 and 1 A g^?1, respectively.     

Structural,optical and microscopic properties of chemically deposited Mo<Subscript>0.5</Subscript>W<Subscript>0.5</Subscript>Se<Subscript>2</Subscript> thin films

Mo_0.5W_0.5Se₂ thin films were obtained by using relative simple chemical route at room temperature. Various preparative conditions of the thin films are outlined. The films were characterized by X-ray diffraction, scanning electron microscope, optical and electrical properties. The grown films were found to be uniform, well adherent to substrate and brown in color. The X-ray diffraction pattern shows that thin films have a hexagonal phase. Optical properties show a direct band gap nature with band gap energy 1.44 eV and having specific electrical conductivity in the order of 10⁻⁵ (Ωcm)⁻¹.     

Photoluminescence properties of a novel red-emitting phosphor Ba<Subscript>2</Subscript>LaV<Subscript>3</Subscript>O<Subscript>11</Subscript>:Eu<Superscript>3+</Superscript>

Ba₂LaV₃O₁₁:Eu³⁺ phosphors were firstly synthesized by the traditional solid-state reaction method at 1100 °C. Their luminescence properties were investigated by photoluminescence excitation and emission spectra. The excitation spectrum shows a broad band centered at about 275 nm in the region from 200 to 370 nm, which is attributed to an overlap of the charge transfer transitions of O^2??→?V⁵⁺ and O^2??→?Eu³⁺. The phosphors exhibit the red emissions of Eu³⁺ and the emission intensity ratio of ⁵D₀?→?⁷F₂ to ⁵D₀?→?⁷F₁ is dependent on the Eu³⁺ concentration due to an environment change about Eu³⁺ ions. Concentration quenching occurs at 30 mol% in the phosphors and exchange interaction is its main mechanism. Ba₂LaV₃O₁₁:Eu³⁺ displays tunable CIE color coordinates from yellow orange to red depended on Eu³⁺ content, which may have a potential application for illuminating and display devices.     

Structural and optical properties of chemically deposited Cd(S-Se): CdCl<Subscript>2</Subscript>, Sm films

Results of SEM and XRD studies, optical absorption and photoluminescence (PL) emission spectra and photoconductivity (PC), rise and decay studies are reported for Cd(S-Se): CdCl₂, Sm films prepared by chemical deposition method on glass substrates at 60°C in a water bath. SEM studies show ball-type structures along with voids which are related to layered growth. XRD studies show prominent diffraction lines of CdS and CdSe along with some peaks of CdCl₂ and impurity Sm. The values of strain (ɛ), grain size (D) and dislocation density (δ) are evaluated from XRD studies and the nature of crystallinity of the films are discussed. Optical absorption spectra also show the presence of Sm in the lattice. From the results of optical absorption spectra, the band gaps are determined. PL emission spectra of Cd(S-Se) consist of two peaks which are related to the edge emission of CdS and CdSe involving excitons. In Sm-doped emissions corresponding to transitions ⁴ G _5/2 to ⁶ H _5/2, ⁶ H _7/2 and ⁶ H _9/2 are observed. Sufficiently high photo current (I _pc) to dark current (I _dc) ratios with a maximum value of the order of 10⁶ are also obtained in some special cases. This high photosensitization is related to increase in mobility and life time of carriers due to photo excitation.     

X-Ray luminescence of polycrystalline TbO<Subscript>2</Subscript>-doped Li<Subscript>2</Subscript>B<Subscript>4</Subscript>O<Subscript>7</Subscript>

This paper examines the effect of doping level on the X-ray luminescence of TbO₂-doped polycrystalline lithium tetraborate. It is shown that, when interpreting such spectra, it is convenient to proceed from the terms of free activator and constituent ions. We demonstrate that the emission lines of Tb³⁺ in doped polycrystalline lithium tetraborate are effectively excited in the band between 350 and 650 nm, which is predominantly due to electron transitions from the ⁵ D ₃ and ⁵ D ₄ excited states to spin-orbital levels of the ⁷ F _J ground multiplet. The emission lines of lithium and boron in single-crystal and polycrystalline undoped lithium tetraborate are effectively excited in the band between 274 and 550 nm.     

Structural,optical and non-linear investigation of Eu<Superscript>3+</Superscript>: Al(NO<Subscript>3</Subscript>)<Subscript>3</Subscript>-SiO<Subscript>2</Subscript> sol-gel glass

Optical absorption and fluorescence spectra of Eu³⁺ ions in Al(NO₃)₃-SiO₂ sol-gel glass have been investigated using the Judd- Ofelt theory. JO intensity parameters (ω _λ ) and subsequent radiative properties for⁵ D ₀ ↔⁷ F _1,2,4,6 transitions are determined. The lifetime (τ_r) of⁵ D ₀ state is computed and along with JO parameters are compared with their corresponding values in other glasses prepared by conventional technique. A structural analysis, using IR and XRD spectra and non- linear parametrization of the silica gel glass is carried out. The study reveals the glass to be a very good third order non- linear amorphous optical material.