An Overgrowth-Free Design for InGaAlAs Spot-Size-Converted Ridge Waveguide Lasers

A great deal of work has been done over the past several years toward the development of lasers with integrated spot-size converters, for better coupling directly to flat cleaved fiber or better alignment tolerance in lensed systems. Many of the techniques, such as butt-coupling or lateral-taper-vertical-shift, require etch-and-regrowth over the active region and as such are not applicable directly to Al-containing lasers. In this letter, we demonstrate a simple method to achieve narrow (15deg times 15deg) far fields in Al-containing devices with a moderate degradation of dc, dynamic and thermal characteristics. At room temperature, uncoated 300-mum-long devices have thresholds of about 18 mA and slope efficiencies of about 0.24 W/A, with 27% power coupled directly into flat cleaved fiber compared to ~10% for a conventional (>30deg far field) device. Comparison between calculated and measured far fields versus ridge width and number of quantum wells gives design curve information for optimizing far field performance.     

ZnO–ZnMgO Multiple Quantum-Well Ridge Waveguide Lasers

ZnO-ZnMgO multiple quantum-well (MQW) thin-film waveguides with ridge structures have been fabricated on quartz substrates. Low-temperature deposition of high-quality ZnO-ZnMgO MQW thin films was achieved by filtered cathodic vacuum arc technique. A ridge is defined on the thin film by plasma etching. Room-temperature lasing with a peak wavelength at 378 nm of 1.5-nm well width was observed under 355-nm optical excitation. Exciton-exciton scattering was attributed to the amplified spontaneous emission observed from the MQW waveguide. The net optical gain can be larger than 80 cm^-1 at a pump intensity of 2 MW/cm² .     

Operational Properties of Ridge Waveguide Lasers with Laterally Tapered Waveguides for Monolithic Integration

We report on a ridge waveguide laser diode with laterally tapered waveguides fabricated in a single growing step using a double patterning method. In this structure, nearly constant output power is obtained with the change of the lower tapered waveguide width, and the facet power ratio of 1.4 to 1.5 is observed over the current range. The asymmetric facet power property is also investigated.     

Transient Thermal Analysis of Ridge Waveguide InAsP／InGaAsP MQW Lasers Operating in Pulse Driving Conditions

The transient thermal characteristics of the ridge waveguide InAsP/lnGaAsP MQW lasers, especially in various pulse driving conditions, have been simulated by using FEM. The temperature at the active core of the laser versus the time has been calculated as well as pulse width dependence of the apparent thermal resistance. The results show that the thermal characteristics of the lasers are related to both the thermal conductivity and the specific heat of the materials.     

对单模光纤具有高耦合功率的980nm量子阱脊波导激光器

我们描述了用应变单量子阱外延结构制作的２μｍ宽脊波导激光器，其发射波长为９８０ｎｍ。这种器件对单模光纤呈现出高的耦合效率，我们用工业标准的１４脚双列宜插封装，耦合出高达６０ｍＷ的功率。这种器件是泵浦掺Ｅｒ光纤放大器的理想光源。     

980nm脊型波导激光器腔面非注入区的研究

报导了质子注入技术在提高980nm半导体激光器可靠性上的应用。P-GaAs材料经过质子注入后获得高的电阻率。在距离腔面25μm的区域内进行质子注入,由此形成腔面附近的电流非注入区。腔面附近非注入区减少了腔面载流子的注入,因此减少了非辐射复合的发生,提高了激光器的灾变性光学损伤(COD)阈值。应用质子注入形成腔面非注入区的管芯的平均COD阈值功率达到268mW,而应用常规工艺的管芯的平均COD阈值功率为178mW。同常规工艺相比,应用质子注入形成腔面非注入区技术使管芯的COD阈值功率提高了50％。     

Thermal Characterization of 1.3μm InAsP/InGaAsP Ridge Waveguide MQW Lasers Based on Spectroscopy Method

An experimental way to analyze the thermal characterization of semiconductor lasers based on spectroscopy method under pulse driving conditions has been developed. By using this way the thermal characteristics of strain compensated 1.3μm InAsP/InGaAsP ridge waveguide MQW laser diodes have been investigated. Results show that by measuring and analyzing the lasing spectra under appropriate driving parameters and temperature ranges, the thermal resistance of the laser diodes could be deduced easily. A higher thermal resistance of 640K/W has been measured on a narrow ridge laser chip without soldering. Other thermal and spectral properties of the lasers have also been measured and discussed.     

Thermal Characteriztion of 1.3 μm InAsP／InGaAsP Ridge Waveguide MQW Laser Based on Spectroscopy Method

An experimental way to analyze the thermal characteriztion of semiconductor lasers based on spectroscopy method under pulse driving conditions has been developed,By using this way the thermal characteristicss of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide MQW laser diodes have been investigated.Results shovw that by measuring and analyzing the lasing spectra under appropriate driving parameters and temperature ranges,the thermal resistance of the laser diodes could be deduced easily,A higer thermal resistance of 640 K/W has been measured on a narrow ridge laser chip without soldering.Other thermal and spectral properties of the laser have also been measured and discussed.     

Thermal Characterization of 1.3μm InAsP/InGaAsP Ridge Waveguide MQW Lasers Based on I-V Method

An experimental way for the thermal characterization of semiconductor lasers based on I-V method under pulse driving conditions has been developed, with which the thermal characteristics of strain compensated 1.3μm InAsP/InGaAsP ridge waveguide MQW laser chips have been investigated. The results show that, by measuring and analyzing the I-V characteristics under appropriate pulse driving conditions at different heat sink temperatures, the thermal resistance of the laser diodes could be easily deduced. The driving current and junction voltage waveforms of the laser chips under different pulse driving conditions are also discussed.     

聚合物脊形光波导的理论分析

从理论上推导出聚合物脊形光波导的模式本征值方程,给出了相应的归一通用曲线,可供相应波导设计和制备作为参考。     

聚合物脊形光波导的理论分析

从理论上推导出聚合物脊形光波导的模式本征值方程,给出了相应的归一化通用曲线,可供相应波导设计和制备作为参考。     

Experimental Observation of Chaotic Dynamics in Two Coupled Diode Lasers Through Lateral Mode Locking

The nonlinear and chaotic phenomena in lateral coupled diode lasers have been widely studied theoretically. In this work an experimental analysis of the complex nonlinear and chaotic dynamic regimes experimentally observed in these devices and the mechanisms that produces it is made. This analysis is set by means of the RIN electrical spectrum and of the high resolution Fabry–Perot optical spectrum. A mapping of the nonlinear occurrences in these devices is obtained and a study of the relation between the relaxation oscillation frequency and the lateral locking frequency is achieved.      

高功率平板波导激光器进展

详细介绍了平板波导二极管(LD)抽运高功率同体激光器的进展,分析了系统的优点和潜在的风险。具体讨论了接近式LD耦合方式、双包层波导结构和非稳腔的使用,以及梯形结构波导、集成被动调Q设计。激光介质包括Yb^3 ,Nd^3 和Tm^3 掺杂的YAG晶体材料。具有单片紧凑波导结构的激光器可以获得超过10W的激光输出,获得近衍射极限的激光束。将来可以实现100W以上的激光输出并在单片器件内集成更多的功能。     

InGaAsP/InP Buried‐Ridge Waveguide Laser with Improved Lateral Single‐Mode Property

A novel InGaAsP/InP buried‐ridg waveguide laser diode structure is proposed and demonstrated for use as a single‐mode laser. The lateral mode of the proposed device can be controlled by adjusting the composition and thickness of the InGaAsP layer grown over the active region. Stable single‐mode operation without kinks or beam‐steering is achieved successfully with lateral and transverse in the junction plane even for the device with the ridge width of 9 μm up to an injection current of 500 mA.     

小尺寸硅绝缘体光波导损耗测量

基于法布里-珀罗(F-P)腔理论建立了一种简单有效的硅绝缘体(SOI)光波导损耗测量方法.该方法采用端面耦合,通过测试波导反射功率谱并利用傅里叶频谱信息,完成波导损耗的测量.推导中指出了无法直接利用反射谱F-P峰峰谷值求解损耗的限制因素.应用该方法实现了对刻蚀深度为750 nm和宽度为1200 nm的SOI脊形波导损耗...     

脊波导TM模的FDTD分析

为了进一步分析脊波导,应用FDTD研究了脊波导在TM模式下脊位于不同位置时的TM11模式截止频率＋并给出了单脊波导的TM11模截止频率在脊位于不同位置时变化规律,还有TM模瞬态场图和频谱图。     

High-Power CW InGaAs/AlGaAs (1070 nm) Lasers with a Broadened Lateral Waveguide of the Mesa-Stripe Design

Semiconductors - Semiconductor lasers with a 10-μm-wide lateral mesa-stripe waveguide are developed, and their radiative characteristics are studied. It is shown that the continuous wave (cw)...     

宽带单脊波导缝隙天线阵设计

给出了一种新型脊波导宽边缝隙天线阵设计,天线阵被分成几个子阵形式,通过膜片的激励方式,由一个半高波导功分器馈电.设计、加工了一根16元波导天线阵,测试得到11.3%的阻抗带宽(VSWR＜1.5),天线辐射方向图最大副瓣电平低于-12 dB,具有低于-40 dB的交叉极化特性.     

Lateral Oxidation in Vertical Cavity Surface Emitting Lasers

研究了垂直腔面发射激光器(VCSEL)的侧向氧化工艺及其特性.发现对于条形台面,氧化物生长遵循线性生长规律.但对于在VCSEL中采用的两种结构,氧化物的生长(温度高于435℃)表现为非线性生长行为.理论分析表明,台面结构的几何形状对高温下的氧化速率产生了影响.