硅基微波光子波束形成器研究进展

微波波束形成器是相控阵雷达、5G通信基站等射频发射系统中的核心器件。近年来硅基微波光子波束形成器以其带宽大、尺寸紧凑、重量轻、损耗低、抗电磁干扰等优势成为微波光子学中的研究热点之一。文章从微波光子波束形成的基本原理和性能指标出发,总结了近年来应用于微波光子波束形成器的多种集成可调光学真延迟线结构和波束形成网络架构,并介绍了微波光子波束形成系统集成芯片和自动化控制的最新进展,最后对硅基微波光子波束形成器的未来发展进行了展望。     

基于约束型卡尔曼滤波的最大似然无失真波束形成器

自适应波束形成技术可以有效地拾取高质量的语音信号。近期提出的最大似然无失真（Maximum Likelihood Distortionless Response, MLDR）波束形成器不需要盲估计噪声协方差矩阵,具有很好的应用前景。本文提出了一种基于约束型卡尔曼滤波的MLDR波束形成器并给出了其低复杂度实现算法。将MLDR波束形成器设为卡尔曼滤波器的内部状态变量,采用一阶马尔科夫过程对其建模,而卡尔曼滤波器的观测方程则由MLDR波束形成器的代价函数构成。此外,通过对角化近似,进一步地降低了波束形成器的计算复杂度。在CHiME-3数据集上的测试结果表明,所提的对角化近似的波束形成器在计算复杂度更低的情况下取得了和已有在线实现的MLDR波束形成器相近的性能。      

时域宽带自适应波束形成器设计

针对现有含反馈支路的时域宽带自适应波束形成器运算量大、干扰抑制能力受限的问题,基于广义旁瓣相消结构,引入一条固定系数的全极点反馈支路,设计一种新的时域宽带自适应波束形成器,减少了前向支路所需抽头延迟线个数即自适应权个数,从而降低了运算量,加快了收敛速度。全极点反馈支路以逼近包含干扰频带的带通滤波器为目标进行离线最优化设计,在保证稳定性的同时,增强了波束形成器的干扰抑制能力。仿真结果表明：与现存含反馈支路的时域宽带自适应波束形成器相比,采用相同的自适应算法,设计的波束形成器收敛更快、干扰抑制能力更强;实现相同的 SINR 改善时,新的波束形成器所需运算量远小于现存波束形成器。     

一种新的相干信号波束形成方法

存在相干信号情况下的常规波束形成器,由于相干信号的相对信号强度估计误差、天线阵导向矢量扰动误差和采样协方差矩阵估计误差的存在,会产生波束畸变及信号相消,输出信干噪比会明显下降。该文提出一种基于量子信号处理中内积成形算法的波束形成器,并分析了波束形成器的性能,通过仿真比较验证了新的波束形成器的有效性。分析和实验表明,新波束形成器作为一种鲁棒性波束形成器,在上述应用环境中,通过适当调整影响因子,可以得到比传统波束形成器更稳定的性能输出。     

TMS320C6201在嵌入式波束形成器中的应用

介绍了TMS320C6201在嵌入式波束形成器中的应用，讨论了嵌入式波束形成器的结构、算法、结合TMS320C6201的硬件条件优化数据搬移流程等问题，并最终给出波束形成器的EVM板仿真结果。     

波束形成：一种广泛适用的空间滤波方法

波束形成器是一种处理器,它通过和传感器阵相连接提供一种通用的空间滤波形式。传感器阵收集传播场中的空间样本,这些样本由波束形成器处理。其目的是在存在噪声和干扰的条件下对来自所需方向上的信号作出估计。波束形成器执行空间角度滤波以分离频率重叠但来自不同空间位置的诸信号。本文从信号处理方面对波束形成器作出概括,其重点放在最近的研究成果上,讨论了数据独立的波束形成,统计最佳波束形成,自适应波束形成,和部分自适应波束形成。     

基于广义旁瓣对消器的Laguerre宽带波束形成

基于Frost 结构的Laguerre 宽带波束形成器可以获得比FIR 宽带波束形成器和IIR 宽带波束形成器更好的性能,但其需要单极点的最优求解过程,存在计算复杂度较高及收敛速度较慢等问题.该文提出一种基于广义旁瓣对消器(Generalized Sidelobe Canceller, GSC)的Laguerre 滤波器宽带波束形成算法.该算法首先建立基于GSC结构的Laguerre 宽带波束形成器模型,然后利用最小二乘方法给出一种低复杂度的极点求解方法,最后利用归一化最小均方根误差方法实现宽带波束形成.仿真实验及理论分析表明,该方法无需基于Frost 结构的Laguerre 宽带波束形成器单极点最优求解过程,在保证算法较高的输出信干噪比的同时,减少了计算复杂度,提高了收敛速度.      

基于二阶锥规划的相干信号自适应波束形成

针对常规自适应波束形成器只能用于非相干信号波束形成这一缺陷,提出了一种基于二阶锥规划的相干信号自适应波束形成方法.首先对接收到的信号的自相关矩阵进行Toeplitz重构,使其秩等于干扰和信号的数目;然后在保证波束形成器对期望信号无失真输出和波束旁瓣级电平低于给定要求值的前提下,使波束输出功率最小化,同时对系数的范数进行约束以保证波束形成器的稳健性;最后将波束形成器的设计问题转化为凸优化中的二阶锥规划问题,用MATLAB中的SeDuMi工具箱进行快速求解;仿真结果和数据分析表明了该方法有效性.     

数字波束形成的工程实现方法

着重介绍了一种波束形成器的硬件电路、工作过程和软件设计,并介绍了基于FPGA和ADSP器件的数字波束形成器的实现方案。     

基于CVXGEN的实时嵌入式波束形成实验

实时嵌入式自适应波束形成在现代无线通信系统中具有广泛应用,也是"阵列信号处理"课程教学的难点和重点内容.本文以最小方差无失真响应(MVDR)波束形成器等为例,详细介绍了基于凸优化工具箱CVXGEN的实时嵌入式自适应波束形成器设计过程,并分析了其计算时间和波束形成性能.实践表明,将CVXGEN引入到实验教学中,可使实时嵌入式自适应波束形成器的设计过程更加直观和易于理解.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.