The coupling effects of temperature,electric current and stress on the adhesion and electrical properties of COG assembly

This paper reports the adhesion and electrical properties of chip-on-glass (COG) assembly undergoing the coupling loads of temperature, electric current and stress (hygrothermal stress or thermal stress). Firstly, the effects of loading rate and coupling loads on the adhesive force of COG assembly were studied by shear test. The maximum shear force of COG assembly firstly increases and then decreases with increasing loading rate in range of 10–70 μm/s, peaks at the loading rate of 50 μm/s. When the COG assembly was exposed in the coupling loads of temperature, electric current and hygrothermal stress, its maximum shear force decreases with the increase of hygrothermal aging time. However, as for thermal cycling aging time increases, the maximum shear force increases initially and then decreases for the COG assembly under the coupling loads of temperature, electric current and thermal stress. The functions of the maximum shear force with aging time were obtained by fitting experiment data. Secondly, the real-time resistances of COG assembly during shear test and aging process were detected using two-point probe. In shear process, the real-time resistance increases insignificantly in elastic deformation stage but increases rapidly in viscoelastic deformation stage prior to the fracture. Due to the combined influences of temperature, electric current and stress, the resistance increases remarkably with the increase of hygrothermal aging time and it increases slightly with the increase of thermal cycling aging time. However, the real-time resistance exhibits circulation changes corresponding to thermal cycling. Finally, the relationship of resistance with the maximum shear force of energized COG assembly versus environmental aging times was studied.     

The removal of nanoparticles from sub-micron trenches using megasonics

The removal of nanoparticles form patterned wafers is one of the main challenges facing the semiconductor industry. In this paper, the removal of 100 and 200 nm polystyrene latex (PSL) particles from silicon trenches was investigated. Red fluorescent PSL particles were utilized in the cleaning experiments and were counted using fluorescent microscopy. All the experiments were conducted in a single wafer megasonic tank using deionized water (DI). Trenches were fabricated with widths varying from 200 nm to 2 μm and with an aspect ratio of one. Results show that removal of particles from larger trenches is faster compared to smaller trenches and that megasonics power is more important in the removal process than cleaning time.     

激光等离子体冲击波清洗中的颗粒弹出移除

针对激光等离子体冲击波清洗颗粒技术中的滚动移除机制缺陷,提出一种基于颗粒弹性形变的弹出移除模型。从冲击波与颗粒相互作用出发,考虑冲击波波后气体分子与颗粒的碰撞,结合颗粒弹性储能机制,得到弹出所需要的最小弹性形变高度。根据颗粒弹出所需最低速度和冲击波基本关系式得到满足颗粒弹出要求的冲击波马赫数,结合冲击波波后压强分布特点给出了颗粒弹出所需的外部条件。清洗实验证实了颗粒弹出移除机制的正确性。     

A lubrication model between the soft porous brush and rigid flat substrate for post-CMP cleaning

A 3D lubrication model between a soft porous brush and rigid flat surface in the post-CMP (chemical mechanical polishing) cleaning process for wafer or hard-disc surface is set up in this article. The mesh porous structure of the brush and the kinematic relations between the brush and the surface are taken into account. The flow governing equations for cleaning process are deduced with Newtonian fluids between the brush nodule and the substrate. The distributions of fluid pressure and hydrodynamic removal moment are calculated. The simulation results show that the fluid pressure has negative regions in inlet area. The removal force is depended on system parameter, location, time and particle size. The load and hydrodynamic moment increase with the increase of brush velocity and deflection of brush nodule, which is effective for cleaning. A low wafer rotation speed is recommended to keep the cleaning uniformity. The removal moment is increasing during the cleaning process. The hydrodynamic drag force decreases rapidly with decreasing of particle size. The models are coincident with the actual process and can be used as reference for designing a higher level cleaning process and the analysis of the formation of particle defect.     

The removal of deformed submicron particles from silicon wafers by spin rinse and megasonics

In order to successfully clean particulate contamination from wafer surfaces, it is necessary to understand the adhesion and deformation between the particles and the substrate in contact. The adhesion and removal mechanisms of deformed submicron particles have not been addressed in many previous studies. Submicron polystyrene latex particles (0.1–0.5 μm) were deposited on silicon wafers and removed by spin rinse and megasonic cleanings. Particle rolling is identified as the major removal mechanism for the deformed submicron particles from silicon wafers. Megasonics provides larger streaming velocity because of the extremely thin boundary layer resulting in a larger removal force that is capable of achieving complete removal of contamination particles.     

Reliability and failure analysis of fine copper wire bonds encapsulated with commercial epoxy molding compound

The small outline transistor (SOT) devices which were interconnected with 20 μm copper bonding wire and encapsulated with commercial epoxy molding compound (EMC) have been used in a series of reliability tests which including the thermal shock test, the electrical service life test, and the isothermal aging test. Isolated IMC spots were found at the bonding interface during the thermal shock test. No void or crack was observed even after 1500 cycles thermal shock test. No electrical failure was happened. The isolated IMC spots also occurred at the Cu/Al bonds interface after 500 h electrical operation. After 1000 h electrical operation, the sizes of the IMC spots were about 0.5 μm. No layered IMC was observed. The IMCs were formed at the bonding interface when the aging temperature was between 150 °C and 250 °C. Micro cracks and Kirkendall voids were observed with the aging time of 9 days at 200 °C and the aging time of 9 h at 250 °C. The minor element in the EMC, Sb, has reacted with Cu wire and Cu bond surface at 250 °C when the aging time was more than 16 h. Cu₃Sb was the main product of the diffusion reaction. With the aging time of more than 49 h, the Cu wire was crashed into pieces and the Cu bond periphery has been severely corroded.     

粘着力对化学机械抛光芯片分子去除机理影响的数学模型

基于芯片/磨粒/抛光垫的微观接触力平衡关系,建立了考虑抛光垫/磨粒大变形和粘着力效应的微观接触模型,模型预测结果表明：对于Cu和SiO2芯片而言,粘着力对磨粒所受外力具有重要影响作用;考虑粘着力的情况下,单个磨粒压入芯片的深度比未考虑粘着效应时,最大为原来的2倍和4倍。然而,即使考虑粘着效应时,磨粒压入芯片的深度仍然在分子量级。因此,认为CMP材料的去除机理为单分子层去除机理,为深入研究CMP材料原子/分子去除机理提供了一定的理论指导。     

激光等离子体对硅表面微纳粒子除去机理研究

激光等离子体对精密元件表面微纳米粒子的有效去除,在纳米科研领域中有很大的应用潜力。为了深入研究激光等离子体对微粒的去除机理和条件,采用纳秒脉冲激光等离子体,对硅基底表面的微纳米粒子进行去除实验,观测了微粒的去除效果,并理论分析了等离子体的作用效应。结果表明,等离子体向外辐射宽谱光,紫外短波部分加速周围空气电离,使等离子体体积剧增,并有效提升基底和粒子温度;基底与粒子两者热膨胀度不同,使粒子更易于从基底剥离;同时等离子体向周围膨胀扩散形成高压冲击波,冲击波的压强高达GPa量级,可以克服微粒与基底之间的范德华力,而去除微纳米粒子,尤其对粒径大于0.5μm的去除效果尤其明显;在实际去除过程中,等离子体与基底的距离应该保持在0.2mm~2mm之间,这样既保证了微粒的有效去除,又不会造成基底的损伤。激光等离子体对微粒的去除效果明显,是等离子体辐射效应和冲击波效应的综合作用的结果。     

Preparation, characterization and oxide CMP performance of composite polystyrene-core ceria-shell abrasives

To improve their chemical mechanical polishing (CMP) performance, composite polystyrene-core ceria-shell (PS/CeO₂) abrasives were synthesized by in-situ chemical precipitation. The as-synthesized PS/CeO₂ composite microspheres samples were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), field emission scanning electron microscopy (FESEM), fourier-transform infrared (FT-IR) spectroscopy, thermogravimetric analysis (TGA) and zeta potential analysis. Oxide CMP performance of the PS/CeO₂ composite abrasives was investigated by atomic force microscopy (AFM). The results indicate that PS/CeO₂ composite abrasives with a core-shell structure are obtained successfully. The particle size of as-prepared PS/CeO₂ composite particles is about 140 nm, and the PS microspheres are uniformly coated by CeO₂ nanoparticles. The surface of thermal oxide film polished by PS/CeO₂ composite abrasives has lower topographical variations and surface roughness than that polished by CeO₂ nanoparticles. After polished by composite abrasives, root-mean-square roughness of wafer within 5 μm × 5 μm area is 0.331 nm, and material removal rate can reach 484.5 nm/min.     

Particle adhesion and removal mechanisms in post-CMP cleaning processes

Chemical mechanical polishing (CMP) is considered as the paradigm shift that enabled optical photolithography to continue down to 0.12 /spl mu/m. Currently, the polishing physics is not well defined though it is known that the nature of the process makes particle removal after CMP difficult and necessary. It is important to understand the particle adhesion mechanisms resulting from the polishing process and the effect-of the adhering force on particle removal in post-CMP cleaning processes. In this paper, strong particle adhesion is shown to be caused by chemical reactions (after initial hydrogen bonding) that take place in the presence of moisture and long aging time. In particle removal using brush cleaning, contact between the particle and the brush is essential to the removal of submicron particles. In noncontact mode, 0.1-/spl mu/m particle can hardly be removed when the brush is more than 1 /spl mu/m away from the particle. While in full contact mode, removal is possible for a 0.1-/spl mu/m particle at the investigated brush rotational speeds. The experimental data shows that high removal efficiency (low number of defects) is possible with a high brush pressure and a short cleaning time.     

Analysis of nickel cylindrical bump insertion into aluminium thin film for flip chip applications

This paper investigates the mechanical deformation and the electrical contact resistance of an electroplated Ni micro-cylinder called micro-insert inserted in an Al thin film. A modified nanoindentation apparatus is used to perform the experiments with 6 μm, 8.5 μm and 12.5 μm diameters micro-inserts having the same 5 μm height. Mechanical deformation of Ni micro-insert and Al film is described at different maximum loads corresponding to an equivalent stress of 0.8 GPa, 1.6 GPa and 3.2 GPa. At equivalent stress less than 1.6 GPa, Ni micro-insert exhibits an elastic deformation while at 3.2 GPa it presents an elastic-plastic deformation with a large amount of compression and penetration into micro-insert foundation. Visco-plastic deformation of Al film is noticed during hold at all maximum loads. Beside, Al creep parameters are extracted using a combined Maxwell/Kelvin-Voigt phenomenological model. Mechanical results are coupled to electrical contact resistance measurement.     

A robust spacer gate process for deca-nanometer high-frequency MOSFETs

This paper, presents a robust spacer technology for definition of deca-nanometer gate length MOSFETs. Conformal deposition, selective anisotropic dry-etching and selective removal of sacrificial layers enabled patterning of an oxide hard mask with deca-nanometer lines combined with structures defined with I-line lithography on a wafer. The spacer gate technology produces negligible topographies on the hard mask and no residual particles could be detected on the wafer. The line-width roughness of 40 nm poly-Si gate lines was 4 nm and the conductance of 200 μm long lines exhibited a standard deviation of 6% across a wafer. nMOSFETs with 45 nm gate length exhibited controlled short-channel effects and the average maximum transconductance in saturation was 449 μS/μm with a standard deviation of 3.7% across a wafer. The devices exhibited a cut-off frequency above 100 GHz at a drain current of 315 μA/μm. The physical and electrical results show that the employed spacer gate technology is robust and can define deca-nanometer nMOSFETs with high yield and good uniformity.     

Effect of PVP-coated silver nanoparticles using laser direct patterning process by photothermal effect

Laser direct patterning of silver nanoparticles (AgNPs) conductive patterns on a polyimide substrate using photothermal effect of nanoparticles provides various advantages for applications in flexible electronics. Two PVP content AgNPs were used in this research. Since the thin and thick PVP-coated AgNPs have a strong optical absorption at 426 and 405 nm, respectively, a UV laser (405 nm and 60 mW) is used to trigger AgNPs to convert light into heat due to photothermal effect of nanoparticles. After UV laser beam irradiating on the AgNPs thin film, the AgNPs aggregate into larger conducting grains and improve the adhesion between AgNPs and the polyimide substrate at the same time. Then the desired AgNPs conductive lines (line width: 30 μm, line space: 70 μm) are formed after washing the unirradiated AgNPs. By this method, we have demonstrated a 5 μm width AgNPs conductive line. In the mean time, we also found out that the higher PVP content, the laser direct patterning of AgNPs conductive lines would have more straight and smooth boundaries. And the adhesion between the AgNPs conductive patterns and PI substrate would be better while using higher PVP content AgNPs.     

Synthesis, characterization of CeO2@SiO2 nanoparticles and their oxide CMP behavior

SiO₂ ultrafine spheres are prepared by sol-gel method using tetraethylorthosilicate and ammonia as raw materials. CeO₂-coated SiO₂ (CeO₂@SiO₂) composite nanoparticles are also synthesized through chemical precipitation method. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectrometer (XPS) and dynamic light scattering (DLS) are used to characterize the CeO₂@SiO₂ composite particles. Silicon wafer covered by thermal oxide film is polished by CeO₂@SiO₂ composite abrasives, and the polishing behavior of novel composite abrasives is characterized by atomic force microscope (AFM). The results indicate that the phases of the as-prepared CeO₂@SiO₂ composite particles are composed of cubic fluorite CeO₂ and amorphous SiO₂. CeO₂@SiO₂ composite particles have excellent spherical morphologies and uniform particle size of 150-200 nm. The particle size of CeO₂ as shell is about 10 nm. After coating, the chemical state of SiO₂ is changed due to the formation of Si-O-Ce bond. The root-mean-square (RMS) roughness within 10 × 10 μm² area of thermal oxide film after polished by CeO₂@SiO₂ composite abrasives is 0.428 nm, and material removal rate can reach 454.6 nm/min.     

Reduction of ultrasonic pad stress and aluminum splash in copper ball bonding

Given the cost and performance advantages associated with Cu wire, it is being increasingly seen as a candidate to replace Au wire for making interconnections in first level microelectronics packaging. A Cu ball bonding process is optimized with reduced pad stress and splash, using a 25.4 μm diameter Cu wire. For ball bonds made with conventionally optimized bond force and ultrasonic settings, the shear strength is ≈140 MPa. The amount of splash extruding out of bonded ball interface is between 10 and 12 μm. It can be reduced to 3-7 μm if accepting a shear strength reduction to 50-70 MPa. For excessive ultrasonic settings, elliptical shaped Cu bonded balls are observed, with the minor axis of the ellipse in the ultrasonic direction and the major axis perpendicular to the ultrasonic direction. To quantify the direct effect of bond force and ultrasound settings on pad stress, test pads with piezoresistive microsensors integrated next to the pad and the real-time ultrasonic force signals are used. By using a lower value of bond force combined with a reduced ultrasound level, the pad stress can be reduced by 30% while achieving an average shear strength of at least 120 MPa. These process settings also aid in reducing the amount of splash by 4.3 μm.     

单片晶圆气液混合流清洗技术研究

研究了气液混合流清洗方法对单片晶圆表面颗粒的去除效果,引入无量纲参数移径比（H/D）讨论其对单片晶圆表面颗粒去除效率的影响。此外,还讨论了冲洗时间、冲洗压力对颗粒去除效率的影响。结果表明:晶圆表面颗粒去除效率随着冲洗时间、冲洗压力的增大而提高。移径比为1时晶圆表面颗粒去除效率最高;当移径比小于1时,晶圆表面颗粒去除效率随移径比增大而提高;当移径比大于1时,晶圆表面开始出现未被冲洗的区域,颗粒去除效率随移径比增大而迅速降低。采用气液混合流清洗技术,可以实现颗粒直径为0.2~0.3 μm范围的颗粒去除效率达99%以上,颗粒直径为0.1~0.5 μm范围的颗粒去除效率达96%以上。     

Optical properties of cubic SiC grown on Si substrate by chemical vapor deposition

A series of 3C-SiC films with varied film thickness up to 17 μm have been grown on Si(1 0 0) by chemical vapor deposition, and studied by photoluminescence, Raman scattering, Fourier transform infrared transmission and reflectance measurements. Typical key behaviors on these optical spectra are investigated. Thinner (<3 μm) films have their optical spectral features, mainly associated with defects. High quality of single crystalline cubic SiC materials can be obtained from thicker (>10 μm) films, evidenced by optical spectra. There exists a tensile stress in the 3C-SiC film grown on Si, affecting greatly the optical features. Its measurements have leaded to a formulas on two deformation potentials, a and b.     

Wire-to-wire bonding of μm-diameter aluminum wires for the Electric Solar Wind Sail

We present a novel ultrasonic wire-to-wire bonding method for bonding two micrometer-thick metal wires together. A special jig and an industrial wire bonder perform the bonding. This wire-to-wire bonding is the core unit process to produce space tether for the Electric Solar Wind Sail. The proposed method was validated experimentally with 38 bonds where a 25 μm and a 50 μm by diameter Al wires that were first bonded together after which the bond was pull tested. The measured average pull force was (74 ± 15) mN whereas the lowest pull force value was 40 mN. The results show that wire-to-wire bonds of sufficient strength can be produced for the Electric Solar Wind Sail tether application. Tether manufacturing was demonstrated with a separate test where a 1.4 m long tether was produced featuring more than 100 wire-to-wire bonds.     

New conductive thick-film paste based on silver nanopowder for high power and high temperature applications

A new thick-film material for screen-printing technology, based on nanoscale silver powders with the particle size distribution 5-55 nm is presented. Silver nanopowder used for paste preparation was elaborated by the authors. The compatibility of investigated paste was proven with alumina, silicon, Kapton foil and glass. The main advantage of this paste is sinterability at much lower temperatures (around 300 °C) compared to pastes obtained from micro-powders (650-850 °C). The thicknesses of obtained layers are 2-3 μm. The elaborated layers are dense and well sintered, exhibit good adhesion to all above mentioned substrates and low resistivity as well as very good resistance to high power and elevated temperatures. The results of loading the layers deposited on alumina substrates with high current and exposed to high temperature are presented as well.     

激光等离子体法清洗微纳颗粒的物态变化研究

为了探究激光等离子体冲击波清洗过程中微纳颗粒的物态变化特性,针对单晶硅表面Al微纳颗粒进行了清洗实验;结合等离子体传播规律与有限元法模拟了颗粒内部的应力和温度变化情况,得到了颗粒相变和演化的规律。结果表明,大颗粒与中颗粒数量明显减少,尺寸由原来的0.5μm~3μm变为0.1μm~1μm;颗粒的物态变化主要是冲击波瞬时高温高压作用所致,颗粒内最大应力达到1GPa,最大温度达到1100K;颗粒在冲击波作用下发生了破裂与相变,细小颗粒数量增多并粘附在样品表面,增大了清洗难度。此研究可为激光清洗颗粒的理论和应用提供参考。