A dynamic equivalent circuit model for solid magnetic cores forhigh switching frequency operations

This paper presents a dynamic equivalent circuit model of solid magnetic cores for high frequency operations in power electronic circuits. The effects of eddy current, domain wall motion, and hysteresis are taken into account by distributed equivalent resistors and distributed nonideal differential inductors, respectively. The Preisach hysteresis model is employed to simulate hysteresis effects in the inductors. A discrete transform technique based on the transmission line method is adopted to develop a discrete model for numerical dynamic analysis. The resultant model is just a simple tridiagonal system of equations. Good agreement between computer simulations and measurements has confirmed the validity of the new model     

An equivalent circuit characterization of power MOSFET accounting for high field and high frequency effects

An equivalent circuit model for analyzing the AC characteristics of power VDMOS transistors is presented. The model accounts for high field and saturation effects. This is achieved by incorporating dependent voltage and current sources in the device model. Results are given for the AC characteristics of a POLYFET F2001 Power VDMOSFET rated with a drain current of 1.4A, power out of 2.5W at 1GHz. The linear, quasi-saturation and saturation regions of the IV characteristics are accounted for in the analysis. The small signal device parasitics are extracted through s-parameter methods. The s-parameter results were used to extract the frequency dependent parasitics including parasitic capacitances, inductances and transconductances.     

Two-dimensional numerical simulation of bipolar semiconductor devices taking into account heavy doping effects and Fermi statistics

A numerical method for the solution of steady-state equations describing the processes in heavy doped bipolar devices is proposed. The calculations were carried out for Fermi as well as Boltzmann statistics. The dependence of heavy doping effects on injection level was taken into account as well. It is shown that the current gain values obtained using different statistics may differ remarkably in the case of large donor and acceptor concentrations at the emitter-base junction (Nd = Na ≈ 10¹⁸cm^?3).     

An integrated equivalent circuit model for relative intensity noise and frequency noise spectrum of a multimode semiconductor laser

Relative intensity noise (RIN) and the frequency/phase noise spectrum (FNS) equivalent circuit of a multimode semiconductor laser diode are derived from multimode rate equations with the inclusion of noise Langevin sources. FNS is an important parameter in optical communication systems, and its circuit model is presented, for the first time, in this paper. Both circuit models for RIN and FNS are integrated in one circuit. RIN and FNS are calculated as functions of frequency, output power, and mode number. It is shown that the RIN of the main mode is increased in the multimode lasers with higher mode numbers. Furthermore, we show that RIN and FNS are enhanced for higher output power. The dependency of a multimode laser diode linewidth on output power is also analyzed using the model.     

An efficient path-based equivalent circuit model for design, synthesis, and optimization of power distribution networks in multilayer printed circuit boards

In high-speed printed circuit boards, the decoupling capacitors are commonly used to mitigate the power-bus noise that causes many signal integrity problems. It is very important to determine their proper locations and values so that the power distribution network should have low impedance over a wide range of frequencies, which demands a precise power-bus model considering the decoupling capacitors. However, conventional power-bus models suffer from various problems, i.e., the numerical analyzes require huge computation while the lumped circuit models show poor accuracy. In this paper, a novel power-bus model has been proposed, which simplifies the n-port Z-parameters of a power-bus plane to a lumped T-network circuit model. It exploits the path-based equivalent circuit model to consider the interference of the current paths between the decoupling capacitors, while the conventional lumped models assume that all decoupling capacitors are connected in parallel, independently with each other. It also models the equivalent electrical parameters of the board parasitic precisely, while the conventional lumped models employ only the inter-plane capacitance of the power-ground planes. Although it is a lumped model for fast and easy calculation, experimental results show that the proposed model is almost as precise as the numerical analysis. Consequently, the proposed model enables a quick and accurate optimization of power distribution networks in the frequency domain by determining the locations and values of the decoupling capacitors.     

A complete small-signal equivalent circuit model of cooled butterfly-type 2.5 Gbps DFB laser modules and its application to improve high frequency characteristics

A small-signal equivalent circuit model of 2.5 Gbps DFB laser modules with butterfly-type dual-in-line packages has been proposed and verified using extracted parameters. Parameters related to the equivalent circuit have been extracted from measured S parameters using the modified two-port black box model. This model includes small-signal equivalent circuits of components used for 2.5 Gbps DFB laser modules such as DFB laser, coplanar waveguides, matching resistor, bonding wires, and thermoelectric cooler (TEC). From this equivalent circuit modeling, we show that calculated frequency characteristics of DFB lasers on submount and complete DFB laser modules are similar to their measured frequency characteristics, respectively. Based on this equivalent circuit model, we propose and demonstrate a method that can improve frequency characteristics of 2.5 Gbps DFB laser modules through both experiments and simulations.     

A broad-band lumped element analytic model incorporating skin effect and substrate loss for inductors and inductor like components for silicon technology performance assessment and RFIC design

We present a broad-band lumped element planar inductor model that is suitable for RFIC design in silicon technologies. We provide extensions of the modeling methodology to similar components such as differential inductors, baluns, and solenoid inductors. The analytic computation of the physics-based model components, incorporating both metal skin effect and substrate loss, is described. The model is validated using measured data from over 200 inductors made with five different silicon back-end process technologies. The physics-based implementation of the model allows its use for determining the optimum process technology characteristics for specific radio frequency integrated circuit (RFIC) designs. The analytical based implementation with lumped elements enables effective integration into a robust CAD system for efficient design of RFIC circuits.     

A threshold voltage model for short-channel MOSFETs taking into account the varying depth of channel depletion layers around the source and drain

In this paper, an analytical model for threshold voltage of short-channel MOSFETs is presented. For such devices, the depletion regions due to source/drain junctions occupy a large portion of the channel, and hence are very important for accurate modeling. The proposed threshold voltage model is based on a realistic physically-based model for the depletion layer depth along the channel that takes into account its variation due to the source and drain junctions. With this, the unrealistic assumption of a constant depletion layer depth has been removed, resulting in an accurate prediction of the threshold voltage. The proposed model can predict the drain induced barrier lowering (DIBL) effect and hence, the threshold voltage roll-off characteristics quite accurately. The model predictions are verified against the 2-D numerical device simulator, DESSIS of ISE TCAD.     

The behavioral model of a split capacitor array involved in the successive approximation register ADC and taking into account the effect of parasitic capacitors

The analysis of the effect of the parasitic capacitors on the split capacitor array digital-to analog converter for use in the successive approximation register analog-to-digital converter is presented. The Verilog-A model of the split capacitor array is developed based on the analysis. The advantages of using this model in the context of the top-down design methodology are considered.     

A subthreshold surface potential model for short-channel MOSFET taking into account the varying depth of channel depletion layer due to source and drain junctions

An analytical subthreshold surface potential model for short-channel MOSFET is presented. In this model, the effect of varying depth of the channel depletion layer on the surface potential has been considered. The effect of the depletion layers around the source and drain junctions on the surface potential, which is very important for short channel devices is included in this model. With this, the drawback of the existing models that assume a constant channel depletion layer thickness is removed resulting in a more accurate prediction of the surface potential. A pseudo-two-dimensional method is adopted to retain the accuracy of two-dimensional analysis yet resulting in a simpler manageable one-dimensional analytical expression. The subthreshold drain current is also evaluated utilizing this surface potential model.