Rapid thermal annealing of 200°C mercury implants into InP

Elevated-temperature (200°C) implants of 1014 and 1015 Hg ions cm?2 at 100keV have been successfully activated by rapid thermal annealing at temperatures of 750?850°C using a novel dual layer of Si3N4 and AlN as an encapsulant. P-type activity was found for all samples, yielding maximum hole concentrations of approximately HV = 8 × 1017 cm?3 and mobilities of 100 cm2/Vs. Sheet carrier concentrations were found to increase with temperature for 60s anneals, giving a value of 0.8 eV for the `activation energy? of Hg implants in InP. Longer annealing times resulted in a degradation of the encapsulant and a corresponding reduction in electrical properties.     

Carrier removal profiles from oxygen implanted GaAs

Carrier removal profiles have been measured in annealed, oxygen implanted, n-type GaAs samples. The implants were performed at room temperature with an ion energy of 400 keV. A dose of 1015 O+/cm2 produced a resistivity of about 108 ?/? over a layer 0.6 ?m thick, but no significant electrical compensation was observed from doses less than 1013 O+/cm2. However, doses of 1011 to 5×1012 O+/cm2 produced resistivities of 108 to 109 ?/? without subsequent annealing.     

Effect of dual implants into GaAs

Enhanced donor activities have been obtained after annealing at 700°C for selenium implants into GaAs by implanting an equal dose of gallium together with the selenium. Donor concentration depth profiles, measured for both single and dual implants of 1×1013/cm2 and 2×1014/cm2 indicated that the increase in activity was mainly due to an increase in peak donor concentration for the dual implants compared with those measured for single implants.     

质子注入对GaAs基器件隔离研究

质子注入参数对注入型垂直腔面发射激光器（Vertical cavity surface emitting laser, VCSEL）的电流限制孔径位置及电流限制效果具有较大影响。文中从质子注入的能量和剂量及其相互作用对VCSEL电流限制孔径的影响规律及机制出发,通过理论模拟分析了注入参数对质子分布及注入区电阻值的影响。在此基础上,采用VCSEL外延片进行了质子注入实验研究。实验结果和理论分析均表明:注入区电流隔离效果及质子分布受注入能量和剂量共同调控。当注入参数为320 keV、8×1014 cm?2时,经430 ℃、30 s退火后可得到结深约0.7 μm,平均射程距有源区约1.3 μm,电阻值达4.6×107 Ω?cm2的质子注入区。使用该参数制备的VCSEL器件实现了较好的激光激射,证明该质子分布不仅可避免VCSEL有源区损伤,而且能实现较好的电流隔离效果,满足VCSEL电流限制孔径的制备要求。研究结果对质子注入型VCSEL的芯片结构及工艺优化具有重要指导意义。     

硅衬底注氮方法制备超薄SiO2栅介质

利用栅氧化前在硅衬底内注氮可抑制氧化速率的方法,制得3.4nm厚的SiO2栅介质,并将其应用于MOS电容样品的制备.研究了N+注入后在Si/SiO2中的分布及热退火对该分布的影响;考察了不同注氮剂量对栅氧化速率的影响.对MOS电容样品的I-V特性,恒流应力下的Qbd,SILC及C-V特性进行了测试,分析了不同氧化工艺条件下栅介质的性能.实验结果表明:注氮后的热退火过程会使氮在Si/SiO2界面堆积;硅衬底内注入的氮的剂量越大,对氧化速率的抑制作用越明显;高温栅氧化前进行低温预氧化的注氮样品较不进行该工艺步骤的注氮样品具有更低的低场漏电流和更小的SILC电流密度,但二者恒流应力下的Qbd值及高频C-V特性相近.     

Regrowth of amorphous layers in silicon-on-insulator structures formed by the implantation of oxygen

Synthesised silicon-on-insulator structures have been formed and implanted with 1×1016 As+ cm?2 at 40 keV. The regrowth kinetics of the amorphised layer, which also contains lattice defects and excess oxygen, has been studied by Rutherford backscattering. The regrowth of the layer occurs at a mean rate of 13 ? min?1 at 500°C with an activation energy of 2.7±0.2 eV. This experiment further demonstrates the suitability of these synthesised structures as a direct replacement for bulk silicon in VLSI technology.     

Fast annealing of 4 in. arsenic-implanted silicon wafers using an imaging furnace

An imaging furnace equipped with a 6.5 kW Xe arc lamp has been used to anneal 4 in. arsenic-implanted silicon wafers in a single exposure. Electrical and structural investigations have shown complete activation without appreciable diffusion of the impurities, and the regrown layers are defect free for low implant dose (5×1014/cm2, 100 keV); for high implant dose (1015/cm2, 200 keV), however, dislocation loops are observed.     

Comparison of electrical profiles from hot and cold implantations of zinc ions into GaAs

Hole concentration and mobility profiles have been measured as a function of dose for 450 keV zinc ions implanted into GaAs. For doses above 1014 ions/cm2 implanted at 200°C very broad profiles were obtained suggesting that significant indiffusion has occurred. However, much narrower profiles were obtained after implanting at room temperature. Peak hole concentrations were in the range 1018?1019 holes/cm3.     

激光等离子体中的靶电压测量

观测并分析了不同功率密度下,由于激光等离子体的空间电荷分离效应而产生的靶电压。100微微秒的1.06微米激光垂直入射到平面铝靶上,功率密度在2×10~(14)～8×10~(14)瓦/厘米~2范围内,测得几千伏的靶电压,持续时间等于或小于毫微秒量级。     

Residual Strain and Electronic Characteristics of Si-doped GaN

The residual strain and the damage induced by Si implantation in GaN samples have been studied, as well as the electronic characteristics. These as-grown samples are implanted with different doses of Si（1 × 10^14 cm^-2, 1×10^15 cm^-2 or ] × 10^16 cm^-2, ]00 keV） and following annealed by rapid thermal anneal（RTA） at 1 000℃ or 1 100℃ for 60 s. High resolution X-ray diffractometer（HRXRD） measurement reveals that the damage peak induced by the implantation appears and increases with the rise of the impurity dose, expanding the crystal lattice. The absolute value of biaxial strain decreases with the increase of the annealing temperature for the same sample. RT-Hall test reveals that the sample annealed at 1 100℃ acquires higher mobility and higher carrier density than that annealed at 1 000 ℃, which reflects that the residual strain（or residual stress） is the main scattering factor. And the sample C3（1 × 10^16 cm^-2 and annealed at 1100 ℃） acquires the best electronic characteristic with the carrier density of 3.25 × 10^19 cm^-3 and the carrier mobility of 31 cm2/（V·S）.     

In0.53Ga0.47As liquid phase epitaxy on (100)-InP substrates at low growth temperatures

In0.53Ga0.47As epitaxial layers of high quality and excellent surface morphology have been grown in an automated LPE system. The growth temperature was varied between 500 and 63O°C. Room-temperature Hall measurements indicated a net carrier concentration of n = 8 × 1014 cm?3 and mobility values of ? = 13000 cm2V?1 s?1 at TG 617°C and n = 7.7 × 1015 cm?3 and ? = 9800 cm2 V?1 s?1 at TG = 517°C, respectively.     

昆明物理研究所大面积水平推舟液相外延碲镉汞薄膜技术进展

报道了近年来昆明物理研究所在富碲水平推舟液相外延碲镉汞外延薄膜制备技术方面的进展。2019年以来,突破了?120 mm碲锌镉晶体定向生长技术,使碲锌镉衬底沉积相和夹杂相密度≤5×103 cm－2,位错腐蚀坑密度（EPD）≤4.0×104 cm－2,?120 mm（111）晶圆衬底的Zn组份分布极差≤0.36%。基于碲锌镉衬底技术的进步,液相外延碲镉汞薄膜的最大生长尺寸达到了70 mm×75 mm,薄膜位错腐蚀坑密度均值为5×104 cm－2,X射线双晶回摆曲线半峰宽（DCRC-FWHM）≤35 arcsec,部分可控制到25 arcsec以下;50 mm×60 mm尺寸长波碲镉汞薄膜的厚度极差≤±1.25 μm,室温截止波长极差≤±0.1 μm,中波碲镉汞薄膜相应指标分别为≤±1 μm、≤±0.05 μm。材料技术的进展促进了制冷型碲镉汞探测器产能提升和成本的降低,也支撑了高性能长波/甚长波探测器、高工作温度（HOT）探测器以及2048×2048、4096×4096等甚高分辨率高性能探测器的研制。     

Ion beam annealed As+ implanted silicon

As+ and Ar+ ion beams have been used to anneal silicon implanted with 6 × 1015 As+/cm2 at 170 keV. Samples were annealed by (i) Ar+ incident on the back face or (ii) direct heating by the dopant ions. Those annealed by (i) exhibited good crystallinity, a low sheet resistivity of 24.0 ± 0 1?/? and no measurable change in the arsenic distribution.     

Fabrication of a m.o.s.f.e.t. with `spoxide? as the gate dielectric having low interface state density

Spin-on oxide (Spoxide), which forms part of the class of deposited oxides, has been found to produce a good electrical interface with silicon after HCl annealing, and surface-state densities of the order of 4 × 1010 eV?1 cm?2 are easily achievable. An n-channel depletion-type m.o.s.f.e.t. has been fabricated with Spoxide as the gate dielectric.     

Effect of As4/Ga flux ratio on electrical properties of NID GaAs layers grown by MBE

The effect of the As4/Ga flux ratio R on NID GaAs layers has been studied when the MBE growth chamber is used without baking after reloading the arsenic cells, in order to increase the productivity of the system. In these conditions a change from p- to n-type is observed when R is varied from 1.8 to 14. Satisfactory p-type material is obtained at R ? 3 (p = 2.0 × 1014 cm?3, ?77 K = 6200 cm2 V?1 s?1). The maximum n-type mobility occurs at R = 5.8. Photoluminescence spectroscopy confirms the effect of R on the incorporation of residual impurities.     

Halogen lamp annealing of GaAs for MESFET fabrication

Incoherent light from high-intensity halogen lamps was used for capless annealing of 2-inch GaAs wafers following silicon ion implantation. Fabrication of depletion mode MESFETs on the annealed wafers was used to study the DC characteristics and uniformity achieved with this annealing method. An average mutual transconductance of 110 mS/mm was obtained with MESFET fabricated wafers which were uniformly implanted at 5 × 1012 cm?2 with Si+ at 80 keV and subsequently annealed at 900°C for 2 s. The carrier concentration profiles obtained with this method are shown to be sharper than those obtained with furnace annealed wafers, which in turn results in a sharper device pinch-off voltage.     

Fabrication of Ultrathin SiO2 Gate Dielectric by Direct Nitrogen Implantation into Silicon Substrate

Nitrogen implantation in silicon substrate at fixed energy of 35keV and split dose of 1e14～5×1e14cm－2 is performed before gate oxidation.The experiment results indicate that with the increasing of implantation dose of nitrogen,oxidation rate of gate decreases.The retardation in oxide growth is weakened due to thermal annealing after nitrogen implantation.After nitrogen is implanted at the dose of 2×1e14cm－2,initial O2 injection method which is composed of an O2 injection/N2 annealing/main oxidation,is applied for preparation of 3.4nm gate oxide.Compared with the control process,which is composed of N2 annealing/main oxidation,initial O2 injection process suppresses leakage current of the gate oxide.But Qbd and HF C-V characteristics are almost identical for the samples fabricated by two different oxidation processes.     

Electrical profiles from zinc implanted GaAs

Hole concentration and mobility profiles have been measured for 1015Zn+/cm2 implanted into GaAs at room temperature. After annealing at 800°C the peak hole concentration for a 60 keV implant was in excess of 1019 holes/cm3 and decreased with increasing energy up to 450 KeV.     

砷化镓注锡的红宝石脉冲激光退火

一、引言 半导体经离子注入后,需经热退火使注入过程引起的晶格损伤得到恢复,同时使注入杂质活化,才能获得良好的电特性。但是热退火有许多的局限性,如高剂量注入所产生的晶格损伤得不到充分恢复,衬底材料的少子寿命与扩散长度会严重下降,对化学稳定性较差的化合物半导体,还会引起分解与     

Chromium contamination in VPE InP from photoconductivity spectra

A photoconductivity study has been made of nominally undoped VPE n-InP materials grown on semi-insulating InP:Fe substrates. The photoresponse spectra obtained indicate features characteristic of Cr deep acceptors. By comparing the magnitudes of the photoresponse with that of a back-doped InP:Cr reference sample, the concentration has been estimated at between 2 and 8×1014 cm?3.