A 10-b, 100-MS/s CMOS A/D converter

A new architecture for a CMOS A/D converter overcomes many of the known problems in the parallel operation of multiple pipelined stages. The input signal is sampled in one channel, and after quantization to 4 b, the residue is distributed into many channels. A prototype implemented in 1-μm CMOS achieves 60 dB signal-to-noise plus distortion ratio (SNDR) at low conversion rates, with a resolution bandwidth of greater than 20 MHz. The SNDR drops by 3 dB at a 95 MHz conversion rate, and the bandwidth remains the same     

A 10-bit 100-MS/s CMOS pipelined folding A/D converter

This paper presents a 10-bit 100-MSample/s analog-to-digital（A/D） converter with pipelined folding architecture.The linearity is improved by using an offset cancellation technique and a resistive averaging interpolation network.Cascading alleviates the wide bandwidth requirement of the folding amplifier and distributed interstage track/hold amplifiers are used to realize the pipeline technique for obtaining high resolution.In SMIC 0.18μm CMOS,the A/D converter is measured as follows:the peak integral nonlinearity and differential nonlinearity are±0.48 LSB and±0.33 LSB,respectively.Input range is 1.0 V_P-P with a 2.29 mm² active area.At 20 MHz input @ 100 MHz sample clock,9.59 effective number of bits,59.5 dB of the signal-to-noise-and-distortion ratio and 82.49 dB of the spurious-free dynamic range are achieved.The dissipation power is only 95 mW with a 1.8 V power supply.     

一种10位100-MS/s CMOS流水折叠式A/D转换器

采用流水折叠结构设计了一种10位100-MSample/s A/D转换器。失调取消技术和电阻平均插值网络提高了转换器的线性度。级联结构放宽了折叠放大器的带宽要求,采用分布式级间跟踪保持放大器实现流水线技术来获得更高的转换精度。基于SMIC 0.18 μm CMOS工艺的测试结果如下：INL和DNL的峰值分别为0.48 LSB and 0.33 LSB。输入电压范围VP-P为1.0 V,芯片面积2.29 mm2。100 MHz采样,20 MHz输入信号下,ENOB为9.59位,SNDR为59.5 dB,SFDR为82.49 dB。1.8V电源电压下功耗仅为95 mW。     

A 50-Mbit/s CMOS monolithic optical receiver

A general-purpose CMOS optical receiver that operates at data rates from 1 to 50 Mb/s has been fabricated in a 1.75-μm CMOS process. The technology choice resulted in a high level of integration compared with similar bipolar technology receivers. The measured minimum signal current for a 10^-9 bit error rate at 50 Mb/s is 48-nA r.m.s. Automatic gain control gives the receiver an electrical input dynamic range of greater than 60 dB. The outputs are TTL (transistor-transistor logic)-compatible and the chip dissipates less than 500 mW when switching at maximum speed. The die area is 16 mm² . A comprehensive noise analysis of the receiver front end provides insight into the design tradeoffs of optical receiver preamplifiers. A wideband precision amplifier used in the linear channel is discussed in detail. A simple method for recovering low-frequency signal information lost in AC coupling is described     

A low glitch 10-bit 75-MHz CMOS video D/A converter

A low glitch 10-bit 75-MHz CMOS current-output video digital-to-analog Converter (DAC) for high-definition television (HDTV) applications is described. In order to achieve monotonicity and low glitch, a special segmented antisymmetric switching sequence and an innovative asymmetrical switching buffer have been used. The video DAC has been fabricated by using 0.8 μm single-poly double-metal CMOS technology. Experimental results indicated that the conversion rate is above 75 MHz, and nearly 50% of samples have differential and integral linearity errors less than 0.24 LSB and 0.6 LSB, respectively. The glitch has been reduced to be less than 3.9 pV·s and the settling time within ±0.1% of the final value is less than 13 ns. The video DAC is operated by a single 5 V power supply and dissipates 1.70 mW at 75 MHz conversion rate (140 mW in the DAC portion). The chip size of video DAC is 1.75 mm×1.2 mm (1.75 mm×0.7 mm for the DAC portion)     

A 45-Mbit/s CMOS VLSI digital phase aligner

An eight-channel, 45-Mb/s digital phase aligner (DPA) has been fabricated in 2-μm CMOS. The device receives asynchronous serial data at a known average clock frequency and unknown phase, and phase-aligns it with a local clock of the same frequency for subsequent synchronous processing. The all-digital architecture of this device minimizes the need for external components and avoids reliance on analog MOS circuitry. Tracking over a phase excursion range of ±4-bit periods has been demonstrated     

A 12-b 5-Msample/s two-step CMOS A/D converter

Two-step flash architectures are an effective means of realizing high-speed high-resolution analog-to-digital converters (ADCs) because they can be implemented without the need for operational amplifiers having either high gain or a large output swing. Moreover, with conversion rates approaching half those of fully parallel designs, such half-flash architectures provide both a relatively small input capacitance and low power dissipation. The authors describe the design of a 12-b 5-Msample/s A/D converter that is based on a two-step flash topology and has been integrated in a 1-μm CMOS technology. Configured as a fully differential circuit, the converter performs a 7-b coarse flash conversion followed by a 6-b fine flash conversion. Both analog and digital error correction are used to achieve a resolution of 12 b. The converter dissipates only 200 mW from a single 5-V supply and occupies an area of 2.5 mm × 3.7 mm     

A 34-ns 1-Mbit CMOS SRAM using triple polysilicon

A 128-kb word/spl times/8-b CMOS SRAM with an access time of 3 ns and a standby current of 2 /spl mu/A is described. This RAM has been fabricated using triple-polysilicon and single-aluminum CMOS technology with 0.8-/spl mu/m minimum design features. A high-resistive third polysilicon load has been developed to realize a low standby current. In order to obtain a faster access time, a 16-block architecture and a data-output presetting technique combined with address transition detection (ATD) are used. This RAM has a flash-clear function in which logical zeros are written into all memory cells in less than 1 /spl mu/s.     

A 10-bit 1-GSample/s Nyquist current-steering CMOS D/A converter

In this paper, a 10-bit 1-GSample/s current-steering CMOS digital-to-analog (D/A) converter is presented. The measured integral nonlinearity is better than ±0.2 LSB and the measured differential nonlinearity lies between -0.08 and 0.14 LSB proving the 10-bit accuracy. The 1-GSample/s conversion rate has been obtained by an, at transistor level, fully custom-designed thermometer decoder and synchronization circuit. The layout has been carefully optimized. The parasitic interconnect loads have been estimated and have been iterated in the circuit design. A spurious-free dynamic range (SFDR) of more than 61 dB has been measured in the interval from dc to Nyquist. The power consumption equals 110 mW for a near-Nyquist sinusoidal output signal at a 1-GHz clock. The chip has been processed in a standard 0.35-μm CMOS technology and has an active area of only 0.35 mm²     

A 10-bit 200-MS/s CMOS parallel pipeline A/D converter

This paper describes a 10-bit 200-MS/s CMOS parallel pipeline analog-to-digital (A/D) converter that can sample input frequencies above 200 MHz. The converter utilizes a front-end sample-and-hold (S/H) circuit and four parallel interleaved pipeline component A/D converters followed by a digital offset compensation. By optimizing for power in the architectural level, incorporating extensively parallelism and double-sampling both in the S/H circuit and the component ADCs, a power dissipation of only 280 mW from a 3.0-V supply is achieved. Implemented in a 0.5-μm CMOS process, the circuit occupies an area of 7.4 mm². The converter achieves a differential nonlinearity and integral nonlinearity of ±0.8 LSB and ±0.9 LSB, respectively, while the peak spurious-free-dynamic-range is 55 dB and the total harmonic distortion better than 46 dB at a sampling rate of 200 MS/s     

A monolithic video A/D converter

The design and measured performance of a fully parallel monolithic 8-bit A/D converter is reported. The required comparators and combining logic were designed and fabricated with a standard high-performance triple-diffused technology. A bipolar comparator circuit giving good performance with high input impedance is described. Circuit operation is reported at sample rates up to 30 megasamples per second (MS/s), with analog input signal power at frequencies up to 6 MHz. Full 8-bit linearity was achieved. An SNR of 42-44 dB was observed at input signal frequencies up to 5.3 MHz.     

3V 10b 70 MHz CMOS D/A converter for video applications

This work describes a 10 b 70 MHz CMOS digital-to-analogue converter (DAC) for video applications. The proposed DAC is composed of a unit decoded matrix for 7 MSBs and a binary weighted array for 3 LSBs, considering linearity, power consumption, routing area and glitch energy. A new switching scheme for the unit decoded matrix is developed to further improve the linearity. Cascode current sources and differential switches with a new deglitching circuit improve the dynamic performance     

A 10 bit 20 MS/s 3 V supply CMOS A/D converter

A 10 bit CMOS A/D converter with 3 V power supply has been developed for being integrated into system VLSI's. In this A/D converter, redundant binary encoders named “twin encoders” enhance tolerance to substrate noise, together with employing differential amplifiers in comparators. The bias circuit using a replica of the amplifier is developed for biasing differential comparators with 3 V power supply. Subranging architecture along with a multilevel tree decoding structure improves dynamic performance of the ADC at 3 V power supply. The A/D converter is fabricated in double-polysilicon, double-metal, 0.8 μm CMOS technology. The experimental results show that the ADC operates at 20 MS/s and the twin encoders suppress the influence of substrate noise effectively. This ADC has a single power supply of 3 V, and dissipates 135 mW at 20 MS/s operation     

A 25-Ms/s 8-bit CMOS A/D converter for embedded application

The design of an 8-bit CMOS A/D converter is described which is intended for embedded operation in VLSI chips for video applications. The requirements on accuracy are analyzed and a comparator circuit is shown which realizes a high bandwidth. The full-flash architecture operates on wideband signals like CVBS in television systems. The A/D converter core measures 2.8 mm² in a 1 μm CMOS process. The embedded operation of the A/D converter is illustrated on a video line-resizing chip     

10 bit 200 MS/s CMOS D/A converter employing high-speed limiter

A 10 bit 200 MS/s CMOS current-steering digital-to-analogue converter (DAC) employing a new voltage limiter to reduce the feedthrough of the control signals is presented. For high-speed operation of the limiter, a design technique based on the parasitic capacitor of a PMOS transistor is proposed. At 200 MS/s, a spurious-free dynamic range of 65 dBc for a 40 MHz output signal has been achieved from the proposed DAC.     

An 8-bit 20-MS/s CMOS A/D converter with 50-mW power consumption

Low power consumption and small chip area (2.09 mm×2.15 mm) are achieved by introducing a new architecture to a subranging A/D converter. In this architecture, both coarse and fine A/D conversions can be accomplished. Consequently, a large number of comparators and processing circuits have been removed from the conventional subranging A/D converter. This architecture has been realized by the introduction of a chopper-type comparator with three input terminals which makes both coarse and fine comparisons by itself. The A/D converter has two 8-b sub/A/D converters which employ this new architecture, and they are pipelined to improve the conversion rate. Good experimental results have been obtained. Both the differential and the integral nonlinearity are less than ±0.5 LSB at a 20-megasample/s sample frequency. The effective resolution at 20-megasample/s sampling frequency is 7.4 b at a 1.97-MHz input frequency and 6.7 b at a 9.79-MHz input frequency. The A/D converter has been fabricated in a 1-μm CMOS technology     

A 70-MS/s 110-mW 8-b CMOS folding and interpolating A/D converter

A CMOS analog to digital converter based on the folding and interpolating technique is presented. This technique is successfully applied in bipolar A/D converters and now also becomes available in CMOS technology. The analog bandwidth of the A/D converter is increased by using a transresistance amplifier at the outputs of the folding amplifiers and, due to careful circuit design, the comparators need no offset compensation. The result is a small area (0.7 mm² in 0.8 μm CMOS), high speed (70 MS/s), and low-power (110 mW at 5 V supply, including reference ladder) A/D converter. A 3.3 V supply version of the circuit runs at 45 MS/s and dissipates 45 mW     

A self-calibrating 15 bit CMOS A/D converter

A self-calibrating analog-to-digital converter using binary weighted capacitors and resistor strings is described. Linearity errors are corrected by a simple digital algorithm. A folded cascode CMOS comparator resolves 30 /spl mu/V in 3 /spl mu/s. An experimental converter fabricated using a 6-/spl mu/m-gate CMOS process demonstrates 15-bit resolution and linearity at a 12-kHz sampling rate.     

A 16-bit low-voltage CMOS A/D converter

A/D converters used in telemetry, instrumentation, and measurements require high accuracy, excellent linearity, and negligible DC offset, but need not be fast. A simple and robust instrumentation A/D converter, fabricated in a low-voltage 4-/spl mu/m CMOS technology, is described. The measured overall accuracy was 16 bits. Using a digital compensation for parasitic effects, both offset and nonlinearity were below 12 /spl mu/V. With analog compensation, the offset was 60 /spl mu/V and the nonlinearity below 15 /spl mu/V. These results indicate that even higher accuracy can be achieved using higher voltage technology.