Structural, optical and electrical properties of reactively sputtered Ag2Cu2O3 films

Ag₂Cu₂O₃ thin films were deposited on glass substrates by RF magnetron sputtering of an equiatomic silver-copper target (Ag_0.5Cu_0.5) in reactive Ar-O₂ mixtures. The reactive sputtering was done at varying power, oxygen flow rate and deposition temperature to study the influence of these parameters on the deposition of Ag₂Cu₂O₃ films. The film structure was determined by X-ray diffraction, while the optical properties were examined by spectrophotometry (UV-vis-NIR) and photoluminescence. Furthermore, the film thickness and resistivity were measured by tactile profilometry and 4-point probe, respectively. Additional mobility, resistivity and charge carrier density Hall effect measurements were done on a few selected samples. The best films in terms of stoichiometry and crystallography were achieved with a sputtering power of 100 W, oxygen and argon flow rates of 20 sccm (giving a deposition pressure of 1.21 Pa) and a deposition temperature of 250 °C. The optical transmittance and photoluminescence spectra of films deposited with these parameters indicate several band gaps, most prominently, a direct one of around 2.2 eV. Electrical characterization reveals charge carrier concentrations and mobilities in the range of 10²¹-10²² cm^− 3 and 0.01-0.1 cm²/Vs, respectively.     

Growth and characterization of group-III impurity-doped semiconducting BaSi2 films grown by molecular beam epitaxy

Ga- or In-doped BaSi₂ films were grown on Si(111) by molecular beam epitaxy (MBE). The Ga-doped BaSi₂ showed n-type conductivity. The electron concentration and resistivity of the Ga-doped BaSi₂ depended on the Ga temperature; however, the electron concentration and resistivity could not be controlled properly. In contrast, the In-doped BaSi₂ showed p-type conductivity and its hole concentration was controlled in the range between 10¹⁶ and 10¹⁷ cm^− 3 at RT.     

New arsenates (V) NaKAl2O[AsO4]2 and Na2KAl3[AsO4]4

The title compounds have been synthesized by a solid state reaction route using a salt flux. Their crystal structures were determined from single crystal X-ray data. NaKAl₂O[AsO₄]₂ crystallizes with the orthorhombic K₂Fe₂O[AsO₄]₂-type, Pnma, a = 8.2368(6) Å, b = 5.5228(3) Å, c = 17.0160(13) Å and Z = 4, whereas Na₂KAl₃[AsO₄]₄ crystallizes with the orthorhombic K₃Fe₃[AsO₄]₄-type, Cmce, a = 10.5049(9), b = 20.482(2), c = 6.3574(6) Å and Z = 4. The NaKAl₂O[AsO₄]₂ structure is built up of [Al₂As₂O₉]²⁻ layers perpendicular to the c-axis which are separated by A⁺ alkali layers. The [Al₂As₂O₉]²⁻ layers consist of ribbons of edge-sharing AlO₆ octahedra, running along the a direction and which are connected through AsO₄ tetrahedra by sharing corners. The Na₂KAl₃[AsO₄]₄ structure contains [Al₃As₄O₁₆]³⁻ layers perpendicular to the b-axis separated by A⁺ alkali layers. The [Al₃As₄O₁₆]³⁻ layer consists of a layer of corner-sharing AlO₆ octahedra which are also connected to the AsO₄ tetrahedra by sharing corners.     

Effect of the cooling rate on the thermoelectric properties of p-type (Bi0.25Sb0.75)2Te3 and n-type Bi2(Te0.94Se0.06)3 after melting in the bismuth-telluride system

The p-type (Bi_0.25Sb_0.75)₂Te₃ and n-type Bi₂(Te_0.94Se_0.06)₃ ingots were prepared by cooling at various cooling rates C after melting so that they have an intermediate state between the polycrystalline and Bridgman ingots which lowers their thermal conductivity κ, where C was changed from 0.10 to 2375 K/min in an evacuated glass tube. When the ingots were cooled at C = 0.50 K/min under the uniaxial temperature gradient of 5 K/cm, it was observed that the c axis of some grains points to the freezing direction. The electrical resistivity ρ, Seebeck coefficient α and κ of ingots were measured at 298 K along the freezing direction, so that ρ and κ at C = 0.50 K/min were lower by 20-30% and 9% than those of the corresponding Bridgman ingots. The thermoelectric figure of merits ZT(=α²T/ρκ) estimated for the p- and n-type ingots then reached high values of 1.27 and 1.25 at 298 K, respectively.     

Epitaxial growth of semiconducting β-FeSi2 and its application to light-emitting diodes

In this paper, we review the detailed study of epitaxial growth of β-FeSi₂ films by reactive deposition epitaxy (RDE), multilayer technique and molecular beam epitaxy (MBE). The p- and n-type β-FeSi₂ was formed when it was grown under an Fe-rich and an Si-rich condition, respectively. The maximum electron and hole mobilities of the β-FeSi₂ epitaxial films reached 6900 and 13000 cm²/V·s for the n- and p-type β-FeSi₂, respectively, at around 50 K. Room temperature (RT) 1.6 μm electroluminescence (EL) was realized by optimizing the growth conditions for p-Si/β-FeSi₂ particles/n-Si structures prepared by RDE for β-FeSi₂ and by MBE for Si.     

Determination of the chemical diffusion coefficient of lithium in Li3V2(PO4)3

The chemical diffusion of lithium ion in Li₃V₂(PO₄)₃ were investigated by cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) methods. The CV results show that there exists a linear relationship between the peak current (i_p) and the square root of the scan rate (ν^1/2). The impedance spectrum exhibits a single semicircle and a straight line in a very low frequency region. A linear behavior was observed for every curve of the real resistance as a function of the inverse square root of the angular frequency in a very low frequency region. The obtained chemical diffusion coefficient from EIS measurements varies within 10^− 9 to 10^− 8 cm²·s^− 1, in good agreement with those from CV results.     

Quantum size effect in thin Cd3As2 films

An investigation has been carried out of the resistivity ?, Hall coefficient R_H and Hall mobility μ_H as functions of film thickness for vacuum-evaporated thin Cd₃As₂ films. The films were evaporated in a vacuum of 10^?5 torr onto mica substrates heated to a temperature t_s of about 160 °C at a rate of deposition v of about 40 Å s^?1. The thicknesses of the films were in the range 0.02–0.2 μm. An oscillating character of the resistivity and the carrier mobility was observed for thicknesses of 0.03–0.1 μm. No distinct oscillations of the Hall coefficient were found. The analysis of the results obtained was performed on the basis of theories of the quantum size effect (QSE). The period of the oscillations measured from the experimental data was about 100 Å, which is in good agreement with the calculated value of about 80 Å.     

Structural and electrical properties of HfO2/Dy2O3 gate stacks on Ge substrates

In the present work we report on the structural and electrical properties of metal-oxide-semiconductor (MOS) devices with HfO₂/Dy₂O₃ gate stack dielectrics, deposited by molecular beam deposition on p-type germanium (Ge) substrates. Structural characterization by means of high-resolution Transmission Electron Microscopy (TEM) and X-ray diffraction measurements demonstrate the nanocrystalline nature of the films. Moreover, the interpretation of the X-ray reflectivity measurements reveals the spontaneous growth of an ultrathin germanium oxide interfacial layer which was also confirmed by TEM. Subsequent electrical characterization measurements on Pt/HfO₂/Dy₂O₃/p-Ge MOS diodes show that a combination of a thin Dy₂O₃ buffer layer with a thicker HfO₂ on top can give very good results, such as equivalent oxide thickness values as low as 1.9 nm, low density of interfacial defects (2-5 × 10¹² eV^− 1 cm^− 2) and leakage currents with typical current density values around 15 nA/cm² at V_g = V_FB − 1V.     

Formation of β-FeSi2 thin films on non-silicon substrates

β-FeSi₂ films were prepared on non-silicon substrates by sputtering. The crystalline growth, stress induced cracks and adhesive ability to the substrate were investigated on substrate temperature and thermal expansion coefficient of substrate materials. It was found that crack formation in β-FeSi₂ films was dependent on the thermal expansion coefficients of CaF₂, MgO and quartz glass insulating materials. High-density cracks were observed from β-FeSi₂ films on CaF₂ and quartz glass substrates with large difference of the thermal expansion coefficient between β-FeSi₂ film and substrate materials, and it was crack-free on MgO substrate with a thermal expansion coefficient close to that of β-FeSi₂ films. Polycrystalline β-FeSi₂ films grew on Mo, Ta, W, Fe and stainless steel (SS) substrates at low substrate temperature around 400 °C. There was no α-FeSi₂ phase confirmed in the films. All the films had continuous structures without noticeable cracks even though they have different thermal expansion coefficients. Capacity-voltage measurements showed that β-FeSi₂ films formed on SS substrates has n-type conductivity, with residual carrier concentrations of about 1.3∼6.4 × 10¹⁸ cm^− 3. Auger electron spectroscopy depth profile measurements identified homogeneous distribution of Fe and Si atoms in the film region, but with a large interface region between the film and the substrate.     

Crystal structures of CdTi2O4(OH)2 and LaTiSbO6

The crystal structures of two PbSb₂O₆-type compounds containing titanium, CdTi₂O₄(OH)₂ and LaTiSbO₆ were refined by X-ray powder diffraction data. For both compounds structure refinements with the space group were successful and the R-factors were R_WP = 6.46% and R_P = 4.90% for CdTi₂O₄(OH)₂ and R_WP = 9.55% and R_P = 7.17% for LaTiSbO₆. These crystal structures were the same as that of the typical PbSb₂O₆-type compound in spite of the existence of protons in the interlayer or two different metal ions in the layer.     

Copper phthalocyanine thin-film field-effect transistor with SiO2/Ta2O5/SiO2 multilayer insulator

Top-contact Copper phthalocyanine (CuPc) thin-film field-effect transistor (TFT) with SiO₂/Ta₂O₅/SiO₂ (STS) multilayer as the dielectric was fabricated and investigated. With the multi-layer dielectric, drive voltage was remarkably reduced. A relatively large on-current of 1.1 × 10⁻⁷ A at a V_GS of −15 V was obtained due to the strong coupling capability provided by the STS multilayer gate insulator. The device shows a moderate performance: saturation mobility of μ_sat = 6.12 × 10⁻⁴ cm²/V s, on-current to off-current ratio of I_on/I_off = 1.1 × 10³, threshold voltage of V_TH = −3.2 V and sub-threshold swing SS = 1.6 V/dec. Atomic force microscope images show that the STS multilayer has a relative smooth surface. Experiment results indicate that STS multilayer is a promising insulator for the low drive voltage CuPc-based TFTs.     

Structural,optical and electrical properties of In4Sn3O12 films prepared by pulsed laser deposition

Highly conducting (σ ∼ 2.6 × 10³ Ω⁻¹ cm⁻¹) In₄Sn₃O₁₂ films have been deposited using pulsed laser deposition (PLD) on glass and quartz substrates held at temperatures between 350 and 550 °C under chamber pressures of between 2.5 and 15 mTorr O₂. The crystallinity and the surface roughness of the films were found to increase with increasing substrate temperature. Electron concentrations of the order of 5 × 10²⁰ cm⁻³ and mobilities as high as 30 cm² V⁻¹ s⁻¹ were determined from Hall effect measurements performed on the films. Fitting of the transmission spectral profiles in the ultra-violet–visible spectrum has allowed the determination of the refractive index and extinction coefficient for the films. A red-shift in the frequency of plasmon resonance is observed with both increasing substrate temperature and oxygen pressure. Effective masses have been derived from the plasma frequencies and have been found to increase with carrier concentration indicating a non-parabolic conduction band in the material In₄Sn₃O₁₂. The optical band-gap has been determined as 3.8 eV from the analysis of the absorption edge in the UV. These results highlight the potential of these films as lower In-content functional transparent conducting materials.     

Tl2Ba2CaCu2O8 thin films on 2 in. LaAlO3(0 0 1) substrates

High quality Tl₂Ba₂CaCu₂O₈ (Tl-2212) superconducting thin films are prepared on both sides of 2 in. LaAlO₃(0 0 1) substrates by off-axis magnetron sputtering and post-annealing process. XRD measurements show that these films possess pure Tl-2212 phase with C-axis perpendicular to the substrate surface. The thickness unhomogeneity of the whole film on the 2 in. wafer is less than 5%. The superconducting transition temperatures T_cs of the films are around 105 K. At zero applied magnetic field, the critical current densities J_cs of the films on both sides of the wafer were measured to be above 2 × 10⁶ A/cm² at 77 K. The microwave surface resistance R_s of film was as low as 350 μΩ at 10 GHz and 77 K. In order to test the suitability of Tl-2212 thin films for passive microwave devices, 3-pole bandpass filters have been fabricated from double-sided Tl-2212 films on LaAlO₃ substrates.     

Materials with layered structures XIII: electrical and optical properties of layered chalcogenides in the system CoIn2S4-CoIn2Se4

The system CoIn₂S_4xSe_4(1−x) has been investigated by X-ray powder methods on samples quenched at 700 °C. The spinel type phase has a phase width of 1≥x>0.9. A new layered compound is formed for 0.9>x>0.45 which crystallizes with the α-FeGa₂S₄-type with a=392.6 pm and c=1270.3 pm (x=0.5) for the hexagonal cell. Platelike crystals of the layered phase are obtained by transport reactions with iodine in a temperature gradient 750→700 °C. The band gaps of these crystals measured by optical absorption vary from 1.2 to 1.4 eV. The electrical conductivities of the crystals are found in the order of 10⁻⁵ Ω⁻¹ cm⁻¹.     

Nd2[MoC2] and RE2[WC2], RE=Ce, Pr, Nd: New carbometalates with Pr2[MoC2] structure type

Four new ternary rare-earth-metal carbometalates, Nd₂[MoC₂] and RE₂[WC₂] with RE=Ce, Pr, Nd, have been synthesized by argon arc melting and subsequent heat treatment at 1170 K for 30 days. They crystallize with the Pr₂[MoC₂] structure type with isolated C⁴⁻ species and are typical carbometalates with (i) low metal-to-carbon ratio, (ii) tetrahedral coordination of the transition metals (T) by carbon, and (iii) a polyanionic network . According to resistivity measurements the compounds are bad metals. Volume chemistry and magnetic susceptibility measurements indicate Pr³⁺, Nd³⁺, and Ce⁴⁺ species, respectively. In the latter case, the additional electron is not transferred to the polyanionic network, instead it mainly populates the Ce partial structure.     

Ohmic contacts and n-type doping on TixCr2 − xO3 films and the temperature dependence of their transport properties

A procedure to dope n-type Cr_2 − xTi_xO₃ thin films is proposed. Besides doping the material, at the same time the method forms ohmic contacts on Ti_xCr_2 − xO₃ films. It consists on the deposition of 10 nm Ti and 50 nm Au, followed by thermal annealing at 1000 °C for 20 min in N₂ atmosphere. Ohmic contacts were formed on three samples with different composition: x = 0.17, 0.41 and 1.07 in a van der Pauw geometry for Hall effect measurements. These measurements are done between 35 K and 373 K. All samples showed n-type nature, with a charge carrier density (n) on the order of 10²⁰ cm^− 3, decreasing as x increased. As a function of temperature, n shows a minimum around 150 K, while the mobilities have an almost constant value of 11, 28 and 7 cm²V^− 1 s^− 1 for x = 0.17, 0.41 and 1.07, respectively.     

Magnetic flux pinning and flux jumps in polycrystalline MgB2

MgB₂ polycrystalline samples were fabricated under varying conditions of isostatic pressing in argon gas. The critical current densities (J_C) were determined through measurements of hysteresis loops, and the highest value of J_C at 10 K was 1.9 × 10⁴ A/cm² at 4.8 T. The depinning temperatures were measured at various magnetic fields using the vibrating reed technique. Flux jumps appeared below 7.4 K. The hysteresis loops were carefully examined to determine the temperature and magnetic field range where flux jumps appeared.     

Crystal structure and ionic conductivity of ruthenium diphosphate ARu2(P2O7)2, A=Li, Na, and Ag, with a tunnel structure

Crystal structure and ionic conductivity of ruthenium diphosphates, ARu₂(P₂O₇)₂ A=Li, Na, and Ag, were investigated. The structure of the Ag compound was determined by single crystal X-ray diffraction techniques. It crystallized in the triclinic space group P−1 with a=4.759(2) Å, b=6.843(2) Å, c=8.063(1) Å, α=90.44(2)°, β=92.80(2)°, γ=104.88(2)°, V=253.4(1) Å³. The host structure of it was composed of RuO₆ and P₂O₇ groups and formed tunnels running along the a-axis, in which Ag⁺ ions were situated. The ionic conductivities have been measured on pellets of the polycrystalline powders. The Li and Ag compounds showed the conductivities of 1.0×10⁻⁴ and 3.5×10⁻⁵ S cm⁻¹ at 150 °C, respectively. Magnetic susceptibility measurement of the Ag compound showed that it did not obey the Curie-Weiss law and the effective magnetic moment decreased as temperature decreased due to the large spin-orbital coupling effect of Ru⁴⁺ ions.     

Characteristics of nano-crystalline diamond films prepared in Ar/H2/CH4 microwave plasma

Characteristics of nano-crystalline diamond (NCD) thin films prepared with microwave plasma chemical vapor deposition (CVD) were studied in Ar/H₂/CH₄ gas mixture with a CH₄ gas ratio of 1-10% and H₂ gas ratio of 0-15%. From the Raman measurements, a pair of peaks at 1140 cm^− 1 and 1473 cm^− 1 related to the trans-polyacetylene components peculiar to nano-crystalline diamond films was clearly observed when the H₂ gas ratio of 5% was added in Ar/H₂/CH₄ mixture. With an increase of H₂ gas content up to 15%, their peaks decreased, while a G-peak at roughly 1556 cm^− 1 significantly increased. The degradation of NCD film quality strongly correlates with the decrease of C₂ optical emission intensity with the increase of hydrogen gas contents. From the surface analysis with atomic force microscopy (AFM), it was found that grain sizes of NCD films were typically of 10-100 nm in case of 5% H₂ gas addition.     

Low-voltage-operating organic complementary circuits based on pentacene and C60 transistors

Low-voltage-operating organic complementary inverters and ring oscillators were fabricated using high field effect mobility pentacene and C₆₀ thin-film transistors (TFTs). The mobilities of pentacene and C₆₀ TFTs were 0.44 and 0.61 cm²/V s, respectively. The complementary inverters composed of these TFTs operated in the voltage range of 2-10 V with large gain values up to 65. The inverter yields 5-stage ring oscillators with a high oscillation frequency of 80 Hz at 10 V.