Plasma dynamic synthesis of composite ZnO-Bi2O3 material with a core-shell structure for varistor ceramics

Zinc oxide has been studied for many years and found many applications in different areas, including the power engineering, where the ZnO-based ceramics could be used as a varistor. However, there is a necessity to add different oxides to ZnO to make a uniform ceramics structure with well enough nonlinear characteristics. In this regard, the uniform distribution of additives in the structure of a composite based on ZnO becomes an urgent task to prepare the high-quality ceramics. This work shows the possibility to obtain the composite powdered material with the uniformly distributed Bi₂O₃ addition in the ZnO crystallites by a plasma dynamic method. The features of this method and flowing reactions allow forming the ZnO-Bi₂O₃ particles with the core-shell structure. The spark plasma sintering of the ZnO-Bi₂O₃ composite material with such particles structure provides the production of varistor ceramics characterized by a fine-grained ZnO structure (average grain size is about 1?µm) with uniformly filled intergranular spaces by Bi₂O₃. The comparison of voltage-current characteristics with the ceramics made of ball-milled commercial powders showed the prospects of using as-prepared ZnO-Bi₂O₃ composite with core-shell structure.     

Inversion boundary induced grain growth in TiO2 or Sb2O3 doped ZnO-based varistor ceramics

In low-voltage varistor ceramics, the phase equilibrium and the temperature of liquid-phase formation are defined by the TiO₂/Bi₂O₃ ratio. The selection of a composition with an appropriate TiO₂/Bi₂O₃ ratio and the correct heating rate is important for the processing of low-voltage varistor ceramics. The total amount of added Bi₂O₃ is important as the grain growth is slowed down by a larger amount of Bi₂O₃-rich liquid phase at the grain boundaries. Exaggerated grain growth in low-voltage varistor ceramics is related to the occurrence of the liquid phase and the presence of TiO₂ which triggers the formation of inversion boundaries (IBs) in only a limited number of grains, and as a result the final microstructure is coarse grained. The Zn₂TiO₄ spinel phase only affects grain growth in compositions with a TiO₂/Bi₂O₃ ratio higher than 1.5. In high-voltage varistor ceramics, just a small amounts of Sb₂O₃ trigger the formation of IBs in practically every ZnO grain, and in compositions with a Sb₂O₃/Bi₂O₃ ratio lower than 1, grain growth that is controlled entirely by an IBs-induced grain growth mechanism results in a fine-grained microstructure. The spinel phase interferes with the grain growth only at higher Sb₂O₃/Bi₂O₃ ratios.     

Thermoelectric properties of Bi2O3-added WO3 ceramics

Tungsten trioxide (WO₃) ceramics were prepared by firing Bi₂O₃-added WO₃ compacts with atomic ratios of Bi/W?=?0.00, 0.01, 0.03, or 0.05, in which Bi₂O₃ was mixed as a sintering agent. Dense ceramics consisting of remarkably grown WO₃ grains were obtained for Bi-containing samples with Bi/W?=?0.01, 0.03, and 0.05. The grain growth was enhanced by the liquid phase of Bi₂W₂O₉ formed among the WO₃ grains while firing. The XRD patterns did not show evidence for Bi inclusion into the WO₃ lattice, but the SEM-EDX showed an intensive distribution of Bi into the grain boundaries. Electrical conductivity σ and Seebeck coefficient S were measured in a temperature range of 373–1073?K. The temperature dependences indicated that the Bi₂O₃-added WO₃ ceramics were n-type semiconductors. It was considered that the electron carriers were generated from oxygen vacancies included into the WO₃ grains. The thermoelectric power factors S²σ for the ceramics ranged from 1.5?×?10^?7 W?m^?1 K^?2 to 2.8?×?10^?5 W?m^?1 K^?2, and the highest value occurred at 970?K for the ceramic with Bi/W?=?0.01.     

Cold sintering ZnO based varistor ceramics with controlled grain growth to realize superior breakdown electric field

Controlling the grain growth and grain boundary morphology is of great importance in the manipulation of electrical properties of electro-ceramics. However, it has been a challenge to achieve dense varistor ceramics with grain sizes in submicrons and nanometers using conventional thermal sintering at high temperatures. Here we present a strategy to fabricate dense ZnO based ceramics with controlled grain growth and thin grain boundaries using cold sintering process (CSP). With CSP, the sintering temperature of ZnO based ceramics dramatically drops from 1100 °C to 300 °C. The Bi₂O₃, Mn₂O₃, and CoO dopants suppress the grain growth of ZnO under CSP conditions, and Bi-rich intergranular films (2?5 nm) can be observed along grain boundaries. The cold sintered ZnO-Bi₂O₃-Mn₂O₃-CoO ceramic shows a non-linear coefficient of 33.5, and a superior breakdown electric field of 3550 V/mm. This work thus demonstrates that CSP is a promising technique for designing new submicron-/nano-ceramics with superior performances.     

Effect of Bi2O3 and B2O3 additives on the sintering temperature, microstructure, and microwave dielectric properties for Sm(Mg0.5Ti0.5)O3 ceramics

The microwave dielectric properties of Sm(Mg_0.5Ti_0.5)O₃ incorporated with various amount of Bi₂O₃ and B₂O₃ additives have been investigated systematically. In this study, both Bi₂O₃ and B₂O₃ additives acting as a sintering aid can effectively lower the sintering temperature from 1550 °C to 1300 °C. The ionic radius of Bi³⁺ for a coordination number of 6 is 0.103 nm, whereas the ionic radius of B³⁺ is 0.027 nm. Clearly, the ionic radius of Bi³⁺ is greatly larger than one of B³⁺, which resulted in the specimens incorporated with Bi₂O₃ having larger lattice parameters and cell volume than those incorporated with B₂O₃. The experimental results show that no second phase was observed throughout the entire experiments. Depending on the interfacial tension, the liquid phase may penetrate the grain boundaries completely, in which case the grains will be separated from one another by a thin layer as shown in Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with Bi₂O₃. Whereas, in Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with B₂O₃, the volume fraction of liquid is high, the grains may dissolve into the liquid phase, and rapidly rearrange, in which case contact points between agglomerates will be dissolved due to their higher solubility in the liquid, leading plate-like shape microstructure.A dielectric constant (?_r) of 29.3, a high Q × f value of 26,335 GHz (at 8.84 GHz), and a τ_f of −32.5 ppm/°C can be obtained for Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with 10 mol% Bi₂O₃ sintered at 1300 °C. While Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with 5 mol% B₂O₃ can effectively lower temperature coefficient of resonant frequency, which value is −21.6 ppm/°C. The Sm(Mg_0.5Ti_0.5)O₃ ceramic incorporated with heavily Bi₂O₃ and B₂O₃ additives exhibits a substantial reduction in temperature (∼250 °C) and compatible dielectric properties in comparison with that of an un-doped one. This implied that this ceramic is suitable for miniaturization in the application of dielectric resonators and filters by being appropriately incorporated with a sintering aid.     

Shock-sintering of low-voltage ZnO-based varistor ceramics with Bi4Ti3O12 additions

Microstructure development in ZnO ceramics with Bi₄Ti₃O₁₂ (BIT) additions was studied in dependence of sintering temperature, inversion boundary (IBs) nucleation, heating rate and doping with transition metal oxides (NiO, MnO₂ and Co₃O₄). We demonstrated that one of the essential conditions for homogeneous microstructure development in this system is rapid release and efficient distribution of TiO₂, necessary for the formation of Ti-rich (tail-to-tail) IBs in ZnO grains. This can be achieved via the so-called shock-sintering procedure described in this article. Immediate decomposition of BIT to TiO₂-rich Bi₂O₃ liquid phase above 1200 °C leads to nucleation of ZnO grains with IBs. Exploiting the growth of ZnO grains with IBs, microstructure development can be easily controlled via the IB-induced grain growth mechanism, previously described in SnO₂-doped and Sb₂O₃-doped ZnO. In contrast to conventional sintering, where erratic nucleation of IBs leads to bimodal grain size distribution, shock-sintering sintering regime produces microstructures with uniform coarse-grain sizes, required for low-voltage varistor ceramics.     

Microstructure and ferroelectric properties of Ta-doped Bi3.25La0.75Ti3O12/ZnO thin film capacitors

Ta-doped Bi_3.25La_0.75Ti₃O₁₂(BLTT)/ZnO films were fabricated on Pt(111)/Ti/SiO₂/Si substrates by a magnetron sputtering method. Firstly, ZnO crystal thin films were grown on the substrates by a reactive sputtering method. Then, BLTT thin films were deposited on the ZnO layers at room temperature and post-annealed at 600 °C. The micromorphology, ferroelectric and dielectric properties of BLTT/ZnO films were analyzed. The XRD analysis shows that ZnO buffer layer significantly reduces the crystallization temperature of BLTT thin film. The TEM results show that lamellar BLTT grains are grown on ZnO layer at a certain angle with few elements diffusion at the interface of ZnO phase and Bi₄Ti₃O₁₂ phase. The ferroelectric properties indicate that BLTT/ZnO films exhibit different remanent polarization and coercive fields under electric field with different directions. The novel mechanism of tailoring ferroelectric properties may open new possibilities for designing special ferroelectric devices.     

Effect of Bi2O3 on phase formation and microstructure evolution of mullite ceramics from mechanochemically activated oxide mixtures

Mullite ceramics with hollow whisker structure have been synthesized firstly through ordinary sintering process. The effects of Bi₂O₃ and processing, on mullitization behavior and morphology development of mullite ceramics, derived from the mechanochemically activated mixture of Al₂O₃ and SiO₂, were investigated in this paper. When the content of Bi₂O₃ was less than 10?mol%, the mullite grains show a short rod-like morphology, without the formation of whisker. As the content of Bi₂O₃ was increased to more than 10?mol%, the formation temperature of mullite was decreased from 1400?°C to 1100?°C. After sintering at 1400?°C, well-developed mullite whiskers with hollow structure were formed. The formation process and growth mechanism of hollow structural whiskers in mullite ceramic doped with high content of Bi₂O₃ were discussed in detail.     

The effect of Bi2O3 compensation during thermal treatment on the crystalline and electrical characteristics of bismuth titanate thin films

Bismuth titanate thin films are deposited on ITO/glass substrates by rf magnetron sputtering at room temperature using a Bi₄Ti₃O₁₂ ceramic target. The deposited Bi₄Ti₃O₁₂ films are annealed in a conventional furnace in ambient air for 10 min at temperatures ranging from 550 to 640 °C. One specimen is annealed in a crucible containing additional Bi₂O₃ compensation powder, while the other specimen is annealed in ambient air. XRD analysis shows that the crystal phases of films annealed with Bi₂O₃ powder are better than those of films annealed without Bi₂O₃ powder. Furthermore, the EDS results reveal that the bismuth weight percentage of the former is higher than that of the latter. SIMS analysis shows that the bismuth decreases near the surface of Bi₄Ti₃O₁₂ film annealed without Bi₂O₃ powder, but reveals a stable distribution throughout the film annealed with Bi₂O₃ powder. These results imply that bismuth is readily evaporated during the thermal treatment process, particularly from the region near the film surface. Finally, the dielectric and polarization properties of the thin films annealed with Bi₂O₃ powder are found to be superior to those of the films annealed in ambient air.     

Influence of Bi2O3/TiO2, Sb2O3 and Cr2O3 doping on low-voltage varistor ceramics

The influence of the amount of Bi₂O₃ and TiO₂ additions at a TiO₂/Bi₂O₃ ratio of 1, as well as Sb₂O₃ and/or Cr₂O₃ doping, on the microstructural development and electrical properties of varistor ceramics in the ZnO–Bi₂O₃–TiO₂–Co₃O₄–Mn₂O₃ system was investigated. In samples with a low level of Bi₂O₃ and TiO₂ (0·3 mol%) and therefore small amount of liquid phase, exaggerated growth of the ZnO grains results in high microstructural inhomogeneity. Co-doping with Sb₂O₃ significantly changes the phase composition of TiO₂ doped low-voltage varistor ceramics. The Bi₃Zn₂Sb₃O₁₁ type pyrochlore phase forms at the expense of the γ-Bi₂O₃ and Bi₄Ti₃O₁₂ phases and decreases the amount of liquid phase in the early stages of sintering. Already small amounts of Sb₂O₃ and/or Cr₂O₃ added to a TiO₂ doped low-voltage varistor ceramics limit ZnO grain growth and increase the threshold voltage V_T of the samples.     

Microstructure and microwave dielectric properties of Al2O3 added Li2ZnTi3O8 ceramics

Recently, the rapid development of advanced communication systems increasingly strongly demands high-performance microwave dielectric ceramics in microwave circuits. Among them, Li₂ZnTi₃O₈ ceramics have been one of the most widely investigated species, due to its high quality factor, moderate firing conditions and low cost. However, the dielectric constants of the already reported Li₂ZnTi₃O₈ ceramics are fixed in a narrow range, limiting their wider applications. To adjust the dielectric constant of the Li₂ZnTi₃O₈ based ceramics, in this work Li₂ZnTi₃O₈ ceramics added with different amounts of Al₂O₃ (0–8?wt%) were prepared by conventional solid-state reaction. The microstructure and microwave dielectric properties of the samples were investigated. Due to the addition of Al₂O₃, the sintering temperature of the ceramics would be increased somewhat. Some Al³⁺ ions could substitute for Ti⁴⁺ ions in Li₂ZnTi₃O₈, and the added Al₂O₃ would react with ZnO to produce a ZnAl₂O₄ phase accompanying with the formation of TiO₂ phase, which would inhibit the growth of Li₂ZnTi₃O₈ grains. The dielectric constant of the finally obtained ceramics would be reduced from 26.2 to 17.9, although the quality factors of the obtained ceramics would decrease somewhat and the temperature coefficient of resonant frequency would deviate further from zero.     

Texture development and dielectric relaxor behavior of 0.80Na0.5Bi0.5TiO3–0.20K0.5Bi0.5TiO3 ceramics templated by plate-like NaNbO3 particles

Plate-like NaNbO₃ particles were used as templates to fabricate grain-oriented 0.96(0.8Na_0.5Bi_0.5TiO₃–0.2 K_0.5Bi_0.5TiO₃)–0.04NaNbO₃ (NKBT) ceramics. The effects of the sintering temperature and the soaking time on the grain orientation and the microstructure of the textured NKBT ceramics were investigated, and the dielectric relaxor behavior is discussed. The results show that textured ceramics were successfully obtained with orientation factor more than 0.8. The textured ceramics have a microstructure with strip-like grains aligning in the direction parallel to the casting plane. The degree of grain orientation increases initially, then decreases with increasing sintering temperature, and increases continuously with increasing soaking time. The textured NKBT ceramics shows obvious dielectric relaxor characteristics which can be well explained by microdomain–macrodomain transition theory with calculating criterion K. The results show that formation of texture is beneficial to microdomain–macrodomain transition, which lead to weaken relaxor behavior and raise the dielectric constant at T_tr.     

Flexural fracture mechanisms and fatigue behaviors of Bi4Ti3O12-based high-temperature piezoceramics sintered at different temperatures

In this paper, a series of Aurivillius phase Bi₄Ti_2.95W_0.05O_12.05 +?0.2?wt% Cr₂O₃ (ab. BTWC) ceramics were prepared by a solid-reaction process and sintered at different temperatures (1050?℃~1150?℃), their microstructures, fracture mechanisms and fatigue behaviors were investigated under three-point-bending mode. The results show that the grain size of BTWC ceramics increases with increasing the sintering temperature. The typical transgranular mode dominates the fracture behavior of the samples sintered at lower temperatures, while the intergranular fracture can be also observed in the samples sintered at higher temperatures. Besides, the storage modulus (E’) and mechanical loss (tan_mδ) of BTWC ceramics have a subtle variation with the increase of sintering temperature. In addition, the high-temperature environment could not only decrease the fracture toughness and bending strength of ceramics but also change their fracture mode. On the other hand, the bending strength also decreases with the decrease of loading rates, which could be attributed to the slow crack growth referring to the dynamic fatigue behavior of brittle materials. The slow crack growth parameter (n) of BTWC ceramics shows a downtrend with increasing their sintering temperature, indicating that those high temperature sintering samples possess a higher susceptibility when subjected to the long-term stress corrosion. Furthermore, the sample sintered at 1125?℃ exhibits an excellent fatigue resistance when subjected to the cyclic stress. The corresponding fatigue mechanism is not only related to the ferroelectric domain configuration but also involved with the pores or impurities.     

Al-doped ZnO varistors prepared by a two-step doping process

ABSTRACT

It is difficult to dope Al into main grains of ZnO varistor ceramics, especially for small doping amount. Generally, all raw materials including Al dopant are directly mixed together and sintered into ceramics. However, in this direct doping process, Al is apt to stay in grain boundaries, and almost does not enter grains. This does harm to the electrical properties of ZnO varistors. In this paper, we proposed a two-step doping process. Al₂O₃ powder was first mixed only with a part of the ZnO powder and pre-sintered. The pre-sintered powder was mixed with other additives such as Bi₂O₃ and the rest ZnO. Then ZnO varistor ceramics were prepared via solid state sintering processes. Results showed that two-step doped ZnO varistors exhibited improved electrical properties with a significant increased nonlinear coefficient and a great decreased leakage current compared to directly doped ones because more Al was incorporated into ZnO grains.     

Influence of the preparation process on the electrical properties of high-field co-doped zinc oxide varistors

High-field ZnO/Bi₂O₃ varistors co-doped with Mn and Co were synthesized using a two-step co-precipitating process. A Zn²⁺ solution containing the Mn and Co doping elements was first precipitated into hydroxides, further converted into oxalates and finally calcined to create the doped ZnO phase. Bi³⁺ precipitated at the grain boundaries thanks to an HNO₃ treatment of the ZnO grains. The influence of the precursor type (nitrates or chlorides) and the calcination temperature on the properties of the powders and ceramics were investigated. ICP-AES, microstructural analysis and non-linear voltage measurements were used to characterize the samples. The type of precursor solution was found to have a strong influence on the electrical properties. Furthermore, the calcination temperature modified the microstructure of the powder and consequently also that of the varistor.     

Synthesis of Bi2O3/TiO2 nanostructured films for photocatalytic applications

Dendritic growth of bismuth oxide nanostructured films was accomplished by reactive magnetron sputtering. The deposition of the Bi₂O₃ template layers was adapted to abide a vapour-liquid-solid mechanism in order to develop a 3D growth morphology with high surface area templates for photocatalytic applications. TiO₂ photocatalytic thin films were deposited at a later stage onto Bi₂O₃ layers. The obtained heterostructured films were characterized by scanning electron microscopy, X-ray diffraction and atomic force microscopy. Additionally, the photocatalytic efficiency was assessed by conducting an assay using methylene blue dye as testing pollutant under a UV-A illumination. The photocatalytic tests revealed that the Bi₂O₃ layers functionalized with TiO₂ thin films are more efficient at degrading the pollutant, by a factor of 6, when compared with the individual layered films.     

Dielectric relaxation and resistive switching of Bi0.96Sr0.04Fe0.98Co0.02O3/CoFe2O4 thin films with different thicknesses of the Bi0.96Sr0.04Fe0.98Co0.02O3 layer

Bi_0.96Sr_0.04Fe_0.98Co_0.02O₃/CoFe₂O₄(BSFCO/CFO) bilayered thin films with different thicknesses of the BSFCO layer are synthesized on FTO/glass substrates by chemical solution deposition method (CSD). The influence of BSFCO thickness on the microstructure, dielectric relaxation, ferroelectric properties and resistive switching (RS) of the thin films are researched. Strain exists in the prepared thin films and gives rise to structural distortion, which has an effect on charged defects and ferroelectric polarization. Dielectric relaxation that is closely related to the interfacial polarization at the BSFCO/CFO interface is observed, and the dielectric loss peaks along with decreasing intensity shift to high frequency with decreasing strain. The Maxwell-Wagner two-layer model is adopted to investigate the mechanism of dielectric relaxation, and the relaxation time τ is calculated and it shown to be directly proportional to the strain. It is found that the dielectric properties, including low dielectric loss, can be improved by controlling the BSFCO layer thickness. The ferroelectric properties improve with the decreasing strain, the 12-BSFCO/CFO thin film possesses a large P_r ~ 102.9?μC/cm² at 660?kV/cm. The observed resistive switching (RS) behavior is attributed to the interfacial conduction mechanism, it is found that strain-dependent the ferroelectric polarization switching modulates the width of depletion layer and the height of potential barrier at the interface, resulting in the different resistance states.     

Optical and structural properties of ZnO NPs and ZnO–Bi2O3 nanocomposites

Pure ZnO and ZnO–Bi₂O₃ nanocomposites with 5 wt% and 10 wt% of Bi₂O₃ content were synthesized using the co-precipitation method. Optical properties such as refractive index (n), extinction coefficient (k), bandgap (E_g), and Urbach energies, as well as the band structure, were determined by modeling the experimental transmittance and reflectance UV–Vis spectra. The deduced bandgap and Urbach energies for pure ZnO (3.758 eV) increase with the increase of the doping degree of Bi₂O₃ in ZnO–Bi₂O₃ nanocomposite films. X-ray diffraction and scanning electron microscopy (SEM) was used to study the structural and morphological properties of these nanocomposite films. Pure ZnO and nanocomposites with Bi₂O₃ exhibit crystalline domains with wurtzite hexagonal structures, and as the doping degree of Bi₂O₃ increases, the crystallite size decreases. Based on SEM micrographs, the ZnO nanoparticles (NPs) structure shows the presence of aggregation. Moreover, Bi₂O₃ NPs in the nanocomposite film led to the further aggregation in the form of large rods. The elemental and chemical properties of the nanocomposites were investigated using infrared and energy-dispersive X-ray spectroscopy. The charge transfer process in the studied system is between ZnO and Bi₂O₃ conduction bands. Density-functional theory (DFT) calculations were performed for ZnO, Bi₂O₃, and ZnO-Bi₂O₃ compounds to investigate structural, optical, and electronic properties, being in agreement with the experimental results.     

Grain growth behaviour of ZnO-based multilayer varistors

In the present study, a model multilayer structure composing of seven Bi₂O₃-doped ZnO layers and AgPd inner electrodes is prepared. The Bi₂O₃-doped ZnO bulk specimens are also prepared for comparison purpose. The size of ZnO grains in the multilayer specimens is smaller than that in the bulk specimen. Furthermore, the size of ZnO grains in the multilayer specimens decreases with the decrease of layer thickness. Microstructure analysis demonstrates that the Bi₂O₃-rich liquid phase wets not only the ZnO grains but also the AgPd electrodes.     

Microstructure, electrical properties, and aging behavior of ZnO-Pr6O11-CoO-Cr2O3-Y2O3-Er2O3 varistor ceramics

The microstructure, electrical properties, and aging behavior of the ZnO-Pr₆O₁₁-CoO-Cr₂O₃-Y₂O₃-Er₂O₃ varistor ceramics were investigated for different contents of Er₂O₃. The microstructure consisted of ZnO grain and an intergranular layer (Pr, Y, and Er-rich phases) as a secondary phase. The increase of Er₂O₃ content decreased the average grain size and increased the sintered density. As the Er₂O₃ content increased, the breakdown field increased from 4206 V/cm to 5857 V/cm and the nonlinear coefficient increased from 32.6 to 48.6. The varistor ceramics added with 1.0 mol% Er₂O₃ exhibited excellent stability by exhibiting −0.2% in the variation rate of the breakdown field and −2.7% in the variation rate of the nonlinear coefficient for aging stress of 0.95 E_1 mA/150 °C/24 h.