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《固体电子学研究与进展》2017,(1)
采用Aixtron 2600G3MOCVD设备外延生长了GaAs/GaInP材料,并结合金相显微镜、X射线衍射仪以及二次离子质谱仪系统地研究了掺杂源Te对GaInP外延层材料特性的影响。实验发现,Te会破坏GaInP外延层的表面形貌,在GaInP表面形成丘状结构及线条,且该丘状结构的尺寸随着GaInP厚度的增加而逐渐增大。在掺杂浓度较高时,Te会破坏GaInP的晶格,造成晶格膨胀。GaInP中Te的并入效率随着厚度的增加而增加,且掺杂浓度越高就越快趋于平稳。此外,Te在As化物中的并入效率大于在P化物中的并入效率。 相似文献
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在特定温控下对掺杂气体分子的状态和活性进行控制 ,建立了一套具有自主知识产权的气源分子束外延工艺生长 Si Ge/Si材料的原位掺杂控制技术。采用该技术生长的 Si Ge/Si HBT外延材料 ,可将硼杂质较好地限制在 Si Ge合金基区内 ,并能有效地提高磷烷对 N型掺杂的浓度和外延硅层的生长速率 ,获得了理想 N、P型杂质分布的 Si Ge/Si HBT外延材料 相似文献
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可用于Ⅲ族氮化物生长的50mm 3C-SiC/Si(111)衬底的制备 总被引:1,自引:0,他引:1
利用新研制出的垂直式低压CVD(L PCVD) Si C生长系统,获得了高质量的5 0 mm 3C- Si C/ Si(111)衬底材料.系统研究了3C- Si C的n型和p型原位掺杂技术,获得了生长速率和表面形貌对反应气体中Si H4 流量和C/ Si原子比率的依赖关系.利用Hall测试技术、非接触式方块电阻测试方法和SIMS,分别研究了3C- Si C的电学特性、均匀性和故意调制掺杂的N浓度纵向分布.利用MBE方法,在原生长的5 0 mm 3C- Si C/ Si(111)衬底上进行了Ga N的外延生长,并研究了Ga N材料的表面、结构和光学特性.结果表明3C- Si C是一种适合于高质量无裂纹Ga N外延生长的衬底或缓冲材料. 相似文献
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目前,应变Si1-xGex薄膜材料杂质浓度尚未有准确且简便易行的测试方法。为了快速准确地确定应变Si1-xGex薄膜材料的掺杂浓度,在研究应变Si1-xGex材料多子迁移率模型的基础上,采用Matlab编程模拟仿真,求解并建立了不同Ge组分下应变Si1-xGex薄膜材料掺杂浓度与其电阻率的关系曲线,讨论了轻、重掺杂两种情况下该关系曲线的变化趋势。通过Si1-xGex薄膜材料样品的四探针电阻率测试及电化学C-V掺杂浓度测试的对比实验,对本关系曲线进行了验证。 相似文献
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研究了垂直梯度凝同法(VGF法)生长的掺Si低阻GaAs单品材料的晶格缺陷和性质,并将VGF法和LEC法生长的非掺半绝缘GaAs单晶进行了比较.利用A-B腐蚀显微方法比较了两种材料中的微沉积缺陷,对其形成原因进行了分析.利用荧光光谱研究了掺Si-GaAs单晶中Si原子和B原子的占位情况和复合体缺陷.Hall测量结果表明,掺Si低阻VGF-GaAs单晶中存在很强的Si自补偿效应,造成掺杂效率降低.VGF-GaAs单品生长过程中高的Si掺杂浓度造成晶体中产生大量杂质沉积,而杂质B的存在加重了这种现象.对降低缺陷密度,提高掺杂效率的途径进行了分析. 相似文献
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研究了垂直梯度凝固法(VGF法)生长的掺Si低阻GaAs单晶材料的晶格缺陷和性质,并将VGF法和LEC法生长的非掺半绝缘GaAs单晶进行了比较. 利用A-B腐蚀显微方法比较了两种材料中的微沉积缺陷,对其形成原因进行了分析. 利用荧光光谱研究了掺Si-GaAs单晶中Si原子和B原子的占位情况和复合体缺陷. Hall测量结果表明,掺Si低阻VGF-GaAs单晶中存在很强的Si自补偿效应,造成掺杂效率降低. VGF-GaAs单晶生长过程中高的Si掺杂浓度造成晶体中产生大量杂质沉积,而杂质B的存在加重了这种现象. 对降低缺陷密度,提高掺杂效率的途径进行了分析. 相似文献
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Liu W. Seabaugh A.C. Henderson T.S. Yuksel A. Beam E.A. III Fan S. 《Electron Devices, IEEE Transactions on》1993,40(8):1384-1389
Negative differential resistance (NDR) has been observed at room temperature in GaInP/GaAs double-heterojunction bipolar transistors (DHBTs). Both the common-emitter and common-base current-voltage characteristics and their magnetic field dependence have been studied to confirm that the observed NDR is due to resonant tunneling. The collector-base voltages at which the collector current resonances occur are calculated and are consistent with the measured values. The devices exhibit an offset voltage of 57 mV and saturation voltage of ⩽ 2-V, both of which are the lowest reported values for GaInP/GaAs DHBTs. The collector-base breakdown voltage in these DHBTs is 31 V, and its variation with junction temperature is measured and described 相似文献
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We report the first large-signal power result from a double heterojunction bipolar transistor (DHBT) based on the GaInP/GaAs/GaInP material system. A CW output power of 1.51 W and a power added efficiency of 52% were achieved at 3 GHz. Because the GaInP collector has a relatively high bandgap of 1.89 eV, high DC bias voltage operation with collector bias extending to 20 V (for a 40-V swing) is possible in this GaInP/GaAs/GaInP DHBT. This high DC bias voltage operation represents a unique advantage over the more conventional AlGaAs/GaAs HBT 相似文献
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Mochizuki K. Welty R.J. Asbeck P.M. Lutz C.R. Welser R.E. Whitney S.J. Pan N. 《Electron Devices, IEEE Transactions on》2000,47(12):2277-2283
This paper describes a novel heterojunction bipolar transistor (HBT) structure, the collector-up tunneling-collector HBT (C-up TC-HBT), that minimizes the offset voltage V/sub CE,sat/ and the knee voltage V/sub k/. In this device, a thin GaInP layer is used as a tunnel barrier at the base-collector (BC) junction to suppress hole injection into the collector, which results in small V/sub CE,sat/. Collector-up configuration is used because of the observed asymmetry of the band discontinuity between GaInP and GaAs depending on growth direction. To minimize V/sub k/, we optimized the epitaxial layer structure as well as the conditions of ion implantation into the extrinsic emitter and post-implantation annealing. The best results were obtained when a 5-nm-thick 5/spl times/10/sup 17/-cm/sup -3/-doped GaInP tunnel barrier with a 20-nm-thick undoped GaAs spacer was used at the BC junction, and when 2/spl times/10/sup 12/-cm/sup -2/ 50-keV B implantation was employed followed by 10-min annealing at 390/spl deg/C. Fabricated 40/spl times/40-/spl mu/m/sup 2/ C-up TC-HBTs showed almost zero V/sub CE,sat/ (<10 mV) and a very small V/sub k/ of 0.29 V at a collector current density of 4 kA/cm/sub 2/, which are much lower than those of a typical GaInP/GaAs HBT. The results indicate that the C-up TC-HBT's are attractive candidates for high-efficiency high power amplifiers. 相似文献
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The degradation on the GaInP/GaAs/Ge triple-junction solar cells was irradiated by proton, and the solar cells with various GaAs sub-cell doping concentrations are modeled by the technology computer aided design (TCAD) simulation. The degradation results of related electrical parameters and external quantum efficiency (EQE) are studied. The degradation mechanism irradiated by proton is discussed. The short-circuit current, maximum power and conversion efficiency decrease with the increasing of GaAs sub-cell doping concentration. When the base doping concentration of GaAs sub-cell is 1×1016 cm-3, the degradation of short-circuit current is less than that of other base doping concentrations. Furthermore, under proton irradiation, with the increase of doping concentration of GaAs sub-cell, the open-circuit voltage first increases and then decreases. Meanwhile, when the base doping concentration of GaAs sub-cell is 2×1017 cm-3, the degradation of open-circuit voltage is less than that of other base doping concentrations. The research will provide the basic theories and device simulation method for GaInP/GaAs/Ge triple-junction solar cells radiation damage evaluation study and radiation hardening, and can provide guidance for the production of triple-junction solar cells in orbit. 相似文献
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J. Garcia C. Dua S. Mohammadi J. W. Park D. Pavlidis 《Journal of Electronic Materials》1998,27(5):442-445
We report on the complete characterization of a hydride- and hydrogen-free chemical beam epitaxy (CBE) process for the realization
of GaAs/GaInP heterojunction bipolar transistors. Alternative group V sources tertiarybutylarsine, tertiarybutylphosphine,
and trisdimethylaminoarsenic are used instead of traditionally employed AsH3 and PH3. A very high degree of reproducibility of growth parameters (fluxes, substrate temperature, doping levels) is demonstrated.
Total defect densities lower than 10 def/cm2 are routinely obtained. Large-area GaInP/GaAs heterojunction bipolar transistors (HBTs) show a high current gain of 225 for
base sheet resistance of 400 ohm/sq. The devices also exhibit excellent high-frequency characteristics. A cut-off frequency
of 48 GHz and a maximum oscillation frequency of 60 GHz have been obtained. These results demonstrate the high potential capability
of CBE for high-throughput GaInP/GaAs HBT production. 相似文献
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Heckmann S. Sommet R. Nebus J.-M. Jacquet J.-C. Floriot D. Auxemery P. Quere R. 《Microwave Theory and Techniques》2002,50(12):2811-2819
It is usual to say that power GaInP/GaAs heterojunction bipolar transistors (HBTs) have many advantages for power amplification at microwave frequencies, because of their high gain and high power density. Furthermore, the possibility of controling the base biasing conditions (voltage, current, self-bias control) compared to a field-effect transistor offers additive degrees of freedom to make a tradeoff between linearity and power-added efficiency. Nevertheless existing devices are limited because of the relatively low breakdown voltage whereas high collector voltage swings are required to achieve high power. This drawback makes them not appropriate for use in the next generation of mobile communication base station or radar systems. Silicon technologies such as LDMOS and III-V devices (MESFET and HFET) present competitive performances in term of high power level but for medium power added efficiency. Important improvements have been made in recent years which make possible large breakdown voltages for GaInP/GaAs HBTs. Breakdown value close to 67 V has been achieved. The aim of this work is to significantly improve the modeling of the breakdown voltage on this type of transistor. Furthermore, the in depth characterization and modeling of self-heating effects have been greatly improved in order to improve thermal management solutions which enable us to enhanced design solutions of HBT high power amplifiers. 相似文献
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Ng G.I. Pavlidis D. Samelis A. Pehlke D. Garcia J.C. Hirtz J.P. 《Electron Device Letters, IEEE》1994,15(10):380-382
GaInP/GaAs heterojunction bipolar transistors (HBT's) have been fabricated on epitaxial layers grown by chemical beam epitaxy (CBE) using an all metalorganic approach. Reduced toxicity tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) were used for group V sources. DC results showed good base and collector current ideality factors of 1.23 and 1.05 respectively. The maximum DC current of 50 was obtained. A comparison of these results with HBT characteristics obtained using AsH 3/PH3 or TBA/PH3 demonstrates the feasibility of replacing the toxic AsH3 and PH3 by less toxic TBA and TBP sources in the growth of GaInP/GaAs HBT's 相似文献
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运用2×1.7MV串列静电加速器提供的质子束,对MOCVD方法制备的GaInP/GaAs/Ge三结电池进行低能质子辐射效应研究.选质子能量为0.28,0.62和2.80MeV,辐照注量为1×1010,1×1011,1×1012和1×1013cm-2.对电池的辐射效应用I-V特性和光谱响应测试进行分析.研究结果表明:随辐照注量的增加,太阳电池性能参数Lsc,Voc和Pmax的衰降幅度均增大;但随质子辐照能量的增加,Lsc,Voc和Pmax的衰降幅度均减小.实验中0.28MeV质子辐照引起电池Lsc,Voc,Pmax衰降最显著,三结电池中光谱响应衰降最明显的是中间GaAs电池. 相似文献
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Wen-Chau Liu Wen-Lung Chang Wen-Shiung Lour Kuo-Hui Yu Kun-Wei Lin Chin-Chuan Cheng Shiou-Ying Cheng 《Electron Devices, IEEE Transactions on》2001,48(7):1290-1296
A newly designed inverted delta-doped V-shaped GaInP/InxGa1-xAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) has been successfully fabricated and studied. For a 1×100 μm2 device, a high gate-to-drain breakdown voltage over 30 V at 300 K is found. In addition, a maximum transconductance of 201 mS/mm with a broad operation regime for 3 V of gate bias (565 mA/mm of drain current density), a very high output drain saturation current density of 826 mA/mm, and a high DC gain ratio of 575 are obtained. Furthermore, good temperature-dependent performances at the operating temperature ranging from 300 to 450 K are found. The unity current gain cutoff frequency fT and maximum oscillation frequency fmax up to 16 and 34 GHz are obtained, respectively. Meanwhile, the studied device shows the significantly wide and flat gate bias operation regime (3 V) for microwave performances 相似文献