Effect of V2O5 Doping on the Sintering and Dielectric Properties of M-Phase Li1+x−yNb1−x−3yTix+4yO3 Ceramics

The effect of the addition of V₂O₅ on the structure, sintering and dielectric properties of M -phase (Li_{1+ x − y} Nb_{1− x −3 y} Ti _x +4 _y )O₃ ceramics has been investigated. Homogeneous substitution of V⁵⁺ for Nb⁵⁺ was obtained in LiNb_{0.6(1− x )}V_{0.6 x} Ti_0.5O₃ for x ≤ 0.02. The addition of V₂O₅ led to a large reduction in the sintering temperature and samples with x = 0.02 could be fully densified at 900°C. The substitution of vanadia had a relatively minor adverse effect on the microwave dielectric properties of the M -phase system and the x = 0.02 ceramics had [alt epsilon]_r= 66, Q × f = 3800 at 5.6 GHz, and τ_f= 11 ppm/°C. Preliminary investigations suggest that silver metallization does not diffuse into the V₂O₅-doped M -phase ceramics at 900°C, making these materials potential candidates for low-temperature cofired ceramic (LTCC) applications.     

Citrate Route to Sn-Doped BaTi4O9 with Microwave Dielectric Properties

Highly reactive and nanometer-sized (30–50 nm) Sn-doped BaTi₄O₉ (BaTi_{4- x} Sn _x O₉; x = 0.0–0.03) powders have been prepared by the citrate-precursor method. The effect of Sn substitution on the crystallization and microwave dielectric properties has also been investigated on the basis of microstructure and crystal structure. Addition of a small amount of SnO₂ resulted in a lowering of the sintering temperature of BaTi₄O₉, and at 1250–1300°C for 2–5 h, dense compounds with a theoretical density up to 99% could be obtained. The Sn-doped BaTi₄O₉ materials were found to have excellent microwave dielectric properties with epsilon_r = 34–37, Q = 8300–8900 at 11 GHz and tau_f = 3.6–16.1 ppm/°C.     

Microwave Dielectric Properties of CaTiO3-CaAl1/2Nb1/2O3 Ceramics Doped with Li3NbO4

The microwave dielectric properties of CaTi_{1− x} (Al_1/2Nb_1/2) _x O₃ solid solutions (0.3 ≤ x ≤ 0.7) have been investigated. The sintered samples had perovskite structures similar to CaTiO₃. The substitution of Ti⁴⁺ by Al³⁺/Nb⁵⁺ improved the quality factor Q of the sintered specimens. A small addition of Li₃NbO₄ (about 1 wt%) was found to be very effective for lowering sintering temperature of ceramics from 1450–1500° to 1300°C. The composition with x = 0.5 sintered at 1300°C for 5 h revealed excellent dielectric properties, namely, a dielectric constant (ɛ_r) of 48, a Q × f value of 32 100 GHz, and a temperature coefficient of the resonant frequency (τ_f) of −2 ppm/K. Li₃NbO₄ as a sintering additive had no harmful influence on τ_f of ceramics.     

Low-Fired (Zn,Mg)TiO3 Microwave Dielectrics

A dielectric ceramic comprised of (Zn_{1- x} Mg _x )TiO₃ ( x = 0 to x = 0.5) with low sintering temperature and promising microwave properties was prepared by applying a semichemical synthesis route and a microbeads milling technique. X-ray diffractometry and thermal analyses results indicated that the phase stability region of the hexagonal (Zn,Mg)TiO₃ extended to higher temperatures as the amount of magnesium increased. The dielectric properties in this system exhibited a significant dependence on the sintering conditions, especially near the phase decomposition temperature. From 950°C, the temperature compensation characteristics occurred as the phase composition changed from hexagonal (Zn,Mg)TiO₃ to two phases: (Zn,Mg)₂TiO₄ and rutile. The magnesium content for zero temperature coefficient (tau_f) was ~3 mol% at 950°C; however, tau_f increased with the sintering temperatures because of the shift of the decomposition temperature.     

A Novel Temperature-Compensated Microwave Dielectric (1−x)(Mg0.95Ni0.05)TiO3−xCa0.6La0.8/3TiO3 Ceramics System

The microstructure and microwave dielectric properties of a (1− x )(Mg_0.95Ni_0.05)TiO₃− x Ca_0.6La_0.8/3TiO₃ ceramics system have been investigated. The system was prepared using a conventional solid-state ceramic route. In order to produce a temperature-stable material, Ca_0.6La_0.8/3TiO₃ was added for a near-zero temperature coefficient (τ_f). With partial replacement of Mg²⁺ by Ni²⁺, the dielectric properties of the (1− x )(Mg_0.95Ni_0.05)TiO₃− x Ca_0.6La_0.8/3TiO₃ ceramics can be promoted. The microwave dielectric properties are strongly correlated with the sintering temperature and the composition. An excellent Q × f value of 118,000 GHz can be obtained for the system with x =0.9 at 1325°C. For practical application, a dielectric constant (ɛ_r) of 24.61, a Q × f value of 102,000 GHz, and a temperature coefficient of resonant frequency (τ_f) of −3.6 ppm/°C for 0.85(Mg_0.95Ni_0.05)TiO₃−0.15Ca_0.6La_0.8/3TiO₃ at 1325°C are proposed. A parallel-coupled line band-pass filter is designed and simulated using the proposed dielectric to study its performance.     

Low-Temperature Sintering and Dielectric Properties of Ag(Nb,Ta)O3 Composite Ceramics

The sintering behavior and dielectric properties of perovskite Ag(Nb_{1− x} Ta _x )O₃ (0 < x < 1) solid solutions and two-phase composite assemblages were explored. A small amount of CuO (1 wt%) was used for liquid-phase sintering and led to high densification at temperatures <950°C. The temperature coefficient of capacitance, TCC, was adjusted by varying the Nb:Ta ratio within the solid-solution series and by creating composite microstructures. Two-phase assemblages consisting of Ag(Nb_3/4Ta_1/4)O₃ and Ag(Nb_1/4Ta_3/4)O₃ were synthesized to achieve a temperature-stable dielectric material for high-frequency applications. The composite dielectric with CuO addition had an average dielectric constant of 390 and a Q × f factor of 410 GHz at 2 GHz, with a stable TCC (0 to −180 ppm/°C) in the temperature range from −20° to +60°C. In addition, process compatibility with a silver conductor was confirmed by high-frequency ring-resonator measurements and microstructural characterization. The Ag(Nb_{1− x} Ta _x )O₃ solid solutions and composites are promising candidates as embedded capacitors for radio-frequency/microwave applications.     

Microwave Dielectrics in the (La1/2Na1/2)TiO3–Ca(Fe1/2Nb1/2)O3 System

Dielectric properties of the system (1 − x)(La_1/2Na_1/2)TiO₃– _x Ca(Fe_1/2Nb_1/2)O₃, where 0.4 # x # 0.6, have been investigated at microwave frequencies. The temperature coefficient of resonant frequency (τ_f), nearly 0 ppm/°C, was realized at x = 0.58. These ceramics had perovskite structure and showed relatively low dielectric losses. A new dielectric material applicable to microwave devices having Q · f of 12000–14000 GHz and a dielectric constant (ε_r) of 59–60 has been obtained at 1300–1350°C for 5–15 h sintering.     

Structure and Microwave Dielectric Properties of Hexagonal Ba[Ti1−x(Ni1/2W1/2)x]O3 Ceramics

Microwave dielectric ceramics with the composition of Ba[Ti_{1− x} (Ni_1/2W_1/2) _x ]O₃ ( x =0.4–0.6) were prepared by a solid-state reaction method. The evolution of the crystalline phases was investigated by X-ray powder diffraction analysis. A cubic-to-hexagonal phase transition occurred between 1000° and 1300°C. The phase transition is irreversible; thus, the hexagonal phase remains stable at room temperature. The X-ray powder diffraction data for x =0.5 were refined using the Rietveld method. It was identified as a h -BaTiO₃-type hexagonal perovksite with the space group of P 6₃/ mmc . It also reveals that random occupancy of Ti⁴⁺ and W⁶⁺ ions occurs in the B-site substructures, whereas Ni²⁺ ions exclusively occupy the octahedral site in the corner-sharing octahedron. The dielectric properties of dense-sintered ceramics were characterized at microwave frequencies. With an increase in x from 0.4 to 0.6, the Q × f value increased from 26 700 to 42 000 GHz, whereas ɛ_r decreased from 29.8 to 20.0, and τ_f from +6.5 to −9.9 ppm/°C.     

Synthesis of BaCu(B2O5) Ceramics and their Effect on the Sintering Temperature and Microwave Dielectric Properties of Ba(Zn1/3Nb2/3)O3 Ceramics

BaCu(B₂O₅) ceramics were synthesized and their microwave dielectric properties were investigated. BaCu(B₂O₅) phase was formed at 700°C and melted above 850°C. The BaCu(B₂O₅) ceramic sintered at 810°C had a dielectric constant (ɛ_r) of 7.4, a quality factor ( Q × f ) of 50 000 GHz and a temperature coefficient of resonance frequency (τ_f) of −32 ppm/°C. As the BaCu(B₂O₅) ceramic had a low melting temperature and good microwave dielectric properties, it can be used as a low-temperature sintering aid for microwave dielectric materials for low temperature co-fired ceramic application. When BaCu(B₂O₅) was added to the Ba(Zn_1/3Nb_2/3)O₃ (BZN) ceramic, BZN ceramics were well sintered even at 850°C. BaCu(B₂O₅) existed as a liquid phase during the sintering and assisted the densification of the BZN ceramic. Good microwave dielectric properties of Q × f =16 000 GHz, ɛ_r=35, and τ_f=22.1 ppm/°C were obtained for the BZN+6.0 mol% BaCu(B₂O₅) ceramic sintered at 875°C for 2 h.     

The Li2O–Nb2O5–TiO2 Composite Microwave Dielectric Ceramics with Adjustable Permittivities

A group of new y M-phase/(1− y ) Li_{2+ x} Ti_{1−4 x} Nb_{3 x} O₃ composite ceramics with adjustable permittivities for low-temperature co-fired ceramic applications was initially investigated in the study. The 0.5 M-phase/0.5 Li_{2+ x} Ti_{1−4 x} Nb_{3 x} O₃ ( x =0.01, 0.02, 0.04, 0.06, 0.081) composite ceramics were first investigated to find the appropriate "Li₂TiO₃ss" composition ( x value). The best dielectric properties of ɛ_r=40.1, Q × f values up to 9318 GHz, τ_f=25 ppm/°C, were obtained for the ceramics composites at x =0.02. Based on the good dielectric properties, the suitable "Li₂TiO₃ss" composition with x =0.02 was mixed with the Li_1.0Nb_0.6Ti_0.5O₃ powder as the ratio of y "M-phase"/(1− y ) "Li₂TiO₃ss" ( y =0.2, 0.4, 0.5, 0.6, 0.8). By adjusting the y values, the group of composite ceramics could exhibit largely are adjustable permittivities varying from ∼20 to ∼60, while Q × f and τ_f values relatively good. Nevertheless, in this study, because there are interactions between the M-phase and Li₂TiO₃ss during sintering process, their microwave dielectric properties could not be predicted precisely by the empirical model.     

Preparation and Dielectric Properties of Low-Temperature-Sinterable (Zr0.8Sn0.2)TiO4 Powder

Low-temperature-sinterable (Zr_0.8Sn_0.2)TiO₄ powders were prepared using 3 mol% Zn(NO₃)₂ additive and then compared with powders prepared using 3 mol% ZnO additive and no additives. Sintering at 1200°C for 2 h produced a dielectric ceramic with ρ= 98.6% of theoretical density (TD), ɛ_r= 38.4, Q × f (GHz) = 42000, and τ _f =−1 ppm/°C. Sintering at 1250°C resulted in an excellent dielectric with ρ= 99% of TD, epsilon_r= 40.9, Q × f (GHz) = 49000, and τ _f =−2 ppm/°C. Scanning electron microscopy showed a microstructure with grains measuring 0.5 to 1 μm, and transmission electron microscopy revealed secondary phase in the grain boundaries.     

Low-Temperature Sintering and Microwave Dielectric Properties of Zinc Metatitanate-Rutile Mixtures Using Boron

Mixtures of zinc metatitanate and rutile (ZnTiO₃+ x TiO₂, where x = 0-0.5) have been prepared via the conventional mixed-oxide method. Centrifugal planetary milling with zirconia beads 1 mm in diameter produced very fine powders (mean particle size of 0.2 µm), which allowed the synthesis of ZnTiO₃ and sintering at temperatures <945°C, which is the decomposition temperature of ZnTiO₃. Sintering of the mixtures was enhanced further by the addition of B₂O₃. Densities of >94% of the theoretical density have been attained for the specimens that were sintered at 875°C for 4 h with B₂O₃ additions of <1 wt%. Microwave dielectric properties of the aforementioned compositions were as follows: dielectric constant of 29-31, normalized quality factor of 56000-69000 GHz, and a temperature coefficient of resonance frequency between -10 and +10 ppm/°C. Sintering was enhanced by the formation of a ZnO-B₂O₃ liquid phase, which affected the microwave properties, because of variation in the phase composition.     

Sintering Behavior, Phase Evolution, and Microwave Dielectric Properties of Bi(Sb1−xTax)O4 Ceramics

Sintering behavior, phase evolution, and microwave dielectric properties of Bi(Sb_{1− x} Ta _x )O₄ ceramics (0.05≤ x ≤0.60) were studied and their relationships were discussed in detail. Phase studies revealed that a pure monoclinic phase could be formed when x ≤0.20 and a pure orthorhombic phase could be obtained when x ≥0.50. As the x value increased from 0.05 to 0.60, the densified temperature of Bi(Sb_{1− x} Ta _x )O₄ ceramics decreased from 1050° to about 960°C whereas the density increased from 8.07 to 8.41 g/cm³. The microwave dielectric constant increased from 20.5 to 34 whereas the Q × f value decreased from 60 000 to 29 000 GHz. In the monoclinic phase region, the temperature coefficients of resonant frequency shifted linearly from −58 to −45 ppm/°C as the x value increased from 0.05 to 0.2 and then remained constant at about −12 ppm/°C when x ≥0.40. The Bi(Sb_{1− x} Ta _x )O₄ ceramics are promising for application of low-temperature cofired ceramics technology.     

Phase Structure, Microstructure, and Electrical Properties of Sb-Modified (K, Na, Li) (Nb, Ta) O3 Piezoelectric Ceramics

Lead-free (K_0.44Na_0.52Li_0.04)(Nb_{0.80− x} Ta_0.20Sb _x )O₃ piezoelectric ceramics were prepared by the ordinary sintering method. The much higher Pauling electronegativity of Sb compared with Nb makes the ceramics more covalent. By increasing x from 0.00 to 0.06, the phase structure of the ceramics changed from the tetragonal to the pseudocubic phase, and both the bands in the Raman scattering spectra shifted to lower frequency numbers. The grain growth of the ceramics was improved by substituting Sb⁵⁺ for Nb⁵⁺. By increasing x , the dielectric properties were optimized and the variation of dielectric constants before and after poling became smaller. Only the tetragonal–cubic phase transition was observed above room temperature in all the ɛ_r– T curves. The degree of diffuseness increased from 1.29 at x =0.00 to 1.96 at x =0.06, indicating that the ceramics at x =0.06 changed to an approximate ideal relaxor ferroelectric. The temperature dependences of f _r and k _p became better by increasing x properly. Significantly, the ceramics with x between 0.00 and 0.04 had high density and outstanding electrical properties ( d ₃₃=241–272pC/N, k _p=0.42–0.52, ɛ_r=1258–1591, tan δ=0.015–0.025, T _c=280°–355°C, E _c=10.62–12.60 kV/cm, and P _r=16.19–20.13 μC/cm²). Besides, the underlying mechanism for variations of the electrical properties due to Sb⁵⁺ substitution was explained in this work.     

A/B Site Modified CaTiO3 Dielectric Ceramics for Microwave Application

(Li_1/2Nd_1/2)²⁺ substitution into the A site and (Mg_1/3Ta_2/3)⁴⁺ substitution into the B site of CaTiO₃ ceramic were investigated, respectively. The modified CaTiO₃ dielectric ceramics prepared by conventional solid-state method exhibit single perovskite structure and improved dielectric properties. Optimal microwave dielectric properties of ɛ_r=112.6, Q × f =4480 GHz, τ_f=8.2 ppm/°C in [Ca_0.4(Li_1/2Nd_1/2)_0.6] TiO₃ and ɛ_r=60.2, Q × f =36900 GHz, τ_f=−10.1 ppm/°C in Ca[Ti_0.4(Mg_1/3Ta_2/3)_0.6] O₃ are obtained, which indicates their potential for microwave application. The effects of change of crystal structure on dielectric properties are also discussed.     

Microstructures and Microwave Dielectric Characteristics of Ca(Zn1/3Nb2/3)O3 Complex Perovskite Ceramics

Ca(Zn_1/3Nb_2/3)O₃ microwave dielectric ceramics were prepared using a solid-state reaction process, and their microwave dielectric properties were evaluated as functions of sintering and postdensification annealing conditions. The relationship between microwave dielectric properties and processing was interpreted through the variation of microstructures. The dielectric constant showed slight variation with sintering and annealing conditions, but the Q × f value increased at first and then decreased with increased sintering temperature, and annealing in oxygen indicated significant improvement in Q × f , especially for the specimens sintered at higher temperatures. The good microwave dielectric properties were obtained in the ceramics sintered at 1225°C in air for 3 h and annealed at 1100°C in oxygen for 8 h: ɛ= 34.1, Q × f = 15 890 GHz, τ_f=−48 ppm/°C.     

Phase Transitions and Electrical Properties of (Na1−xKx)(Nb1−ySby)O3 Lead-Free Piezoelectric Ceramics With a MnO2 Sintering Aid

Lead-free piezoelectric ceramics (Na_{1− x} K _x )(Nb_{1− y} Sb _y )O₃+ z mol% MnO₂ have been prepared by a conventional solid-state sintering technique. Our results reveal that Sb⁵⁺ diffuses into the K_0.5Na_0.5NbO₃ lattices to form a solid solution with a single-phase orthorhombic perovskite structure. The partial substitution of Sb⁵⁺ for B-site ion Nb⁵⁺ decreases the paraelectric cubic-ferroelectric tetragonal phase transition ( T _c) and the ferroelectric tetragonal-ferroelectric orthorhombic phase transition ( T _O–F), and retains strong ferroelectricity. A small amount of MnO₂ is enough to improve the densification of the ceramics. The co-effects of MnO₂ doping and Sb substitution lead to significant improvements in ferroelectric and piezoelectric properties. The ceramics with x =0.45–0.525, y =0.06–0.08, and z =0.5–1 exhibit excellent ferroelectric and piezoelectric properties: d ₃₃=163–204 pC/N, k _P=0.47–0.51, k _t=0.46–0.52, ɛ=640–1053, tan δ=1.3–3.0%, P _r=18.1–22.6 μC/cm², E _c=0.72–0.98 kV/mm, and T _C=269°–314°C.     

Reduced Dielectric Loss of Modified ZnNb2O6 Ceramics by Substituting Nb5+ with Ta5+

The effects of substituting Nb⁵⁺ with Ta⁵⁺ on the microwave dielectric properties of the ZnNb₂O₆ ceramics were investigated in this study. The forming of Zn(Nb_{1− x} Ta _x )₂O₆ ( x =0–0.09) solid solution was confirmed by the measured lattice parameters and the EDX analysis. By increasing x , not only could the Q × f of the Zn(Nb_{1− x} Ta _x )₂O₆ ( x =0–0.09) solid solution be tremendously boosted from 83 600 GHz at x =0 to a maximum 152 000 GHz at x =0.05, the highest ɛ_r∼24.6 could also be achieved simultaneously. It was mainly due to the uniform grain morphology and the highest relative density of the specimen. A fine combination of microwave dielectric properties (ɛ_r∼24.6, Q × f ∼152 000 GHz at 8.83 GHz, τ_f∼–71.1 ppm/°C) was achieved for Zn(Nb_0.95Ta_0.05)₂O₆ solid solution sintered at 1175°C for 2 h.     

A- and B Site Cosubstituted Ba6−3xSm8+2xTi18O54Microwave Dielectric Ceramics

Tin (Sn) substitution into the B-site and Nd/Sn cosubstitution into the A- and B-sites were investigated in a Ba _{6−3 x} Sm_{8+2 x} Ti₁₈O₅₄solid solution ( x = 2/3). A small amount of tin substitution for titanium improved the temperature coefficient of resonant frequency (τ_f) but led to a decrease of the relative dielectric constant (ɛ) and the quality factor ( Qf ). The Ba_{6−3 x} Sm_{8+2 x} (Ti_{1− z} Sn_z)₁₈O₅₄-based tungsten-bronze phase became unstable for compositions with a tin content of ≥10 mol%, where BaSm₂O₄and Sm₂(Sn,Ti)₂O₇appeared, and finally, these phases became the major phases. On the other hand, Nd/Sn cosubstitution led to a good combination of high ɛ, high Qf , and near-zero τ_f. Excellent microwave dielectric properties were achieved in Ba_{6−3 x} (Sm_{1− y} Nd _y )_{8+2 x} (Ti_{1− z} Sn _z )₁₈O₅₄ceramics with y = 0.8 and z = 0.05 sintered at 1360°C for 3 h: ɛ= 82, Qf = 10 000 GHz, and calculated τ_f=+17 ppm/°C. The tolerance factor and electronegativity difference exhibited important effects on the microwave dielectric properties, especially the Qf value. A large tolerance factor and high electronegativity difference generally led to a higher Qf value.     

Microwave Dielectric Properties of A-Site Modified Ba(Co0.7Zn0.3)1/3Nb2/3O3 by La3+

The sintering behavior, ordering state, and microwave dielectric properties of Ba_{1− x} La_{2 x /3}(Zn_0.3Co_0.7)_1/3Nb_2/3O₃ Ceramics (0≤ x ≤0.06) were investigated in this paper. The X-ray diffraction (XRD) results show that all samples exhibit a single perovskite phase except for the sample with x ≥0.03. The sinterability is slightly improved by La doping. The long range order (LRO) degree on B-site is greatly increased with the increase of x value up to x =0.015 and then slightly decreased with the further increase of x due to the increasing amount of second phases. The dielectric constant at microwave frequency decreases slightly with the increase of x when x <0.015 and increases slightly with further increasing x for the samples sintered at 1375°C/10 h. The Q × f value increases with x up to x =0.015 and then decreases with further increase of x , which is consistent with the variation trend of LRO degree. The τ_f value decreases slightly with the increase of x up to 0.006, then increases greatly with the further increase of x . An optimized dielectric properties of ɛ _r =34, Q × f =63 159, GHz and τ_f=5.21 ppm/°C were obtained for the x =0.01 sample sintered at 1425°C/10 h.