SiO2/4H-SiC界面氮化退火

通过1 300℃高温干氧热氧化法在n型4H-SiC外延片上生长了厚度为60 nm的SiO2栅氧化层.为了开发适合于生长低界面态密度和高沟道载流子迁移率的SiC MOSFET器件产品的栅极氧化层退火条件,研究了不同退火条件下的SiO2/SiC界面电学特性参数.制作了MOS电容和横向MOSFET器件,通过表征SiO2栅氧化层C-V特性和MOSFET器件I-V特性,提取平带电压、C-V磁滞电压、SiO2/SiC界面态密度和载流子沟道迁移率等电学参数.实验结果表明,干氧氧化形成SiO2栅氧化层后,在1 300℃通入N2退火30 min,随后在相同温度下进行NO退火120 min,为最佳栅极氧化层退火条件,此时,SiO2/SiC界面态密度能够降低至2.07×1012 cm-2·eV-1@0.2 eV,SiC MOSFET沟道载流子迁移率达到17 cm2·V-1·s-1.     

Nitrogen Plasma Processing of SiO2/4H-SiC Interfaces

A nitrogen plasma annealing process for gate dielectric applications in 4H-SiC metal oxide semiconductor (MOS) technology has been investigated. This process results in substantially greater interfacial N coverage at the SiO₂/4H-SiC interface and lower interface trap densities than the state-of-the-art nitric oxide (NO) annealing process. Despite these exciting results, the field-effect mobility of MOS field-effect transistors (MOSFETs) fabricated by use of this process is very similar to that of NO-annealed MOSFETs. These results emphasize the importance of understanding mobility-limiting mechanisms in addition to charge trapping in next-generation 4H-SiC MOSFETs.     

非晶SiO2纳米线的合成及其显微结构和光学性质的研究

本研究以硅片为衬底,热蒸发一氧化硅粉末在较低温度下合成了大量直径均匀的非晶SiO2纳米线.这些纳米线直径分布在15 nm～40 nm之间,长度几十微米.选区电子衍射(SAED)、能谱(EDS)、电子能量损失谱(EELS)分析结果表明这些纳米线为非晶SiO2纳米线.光致发光(PL)谱测试结果显示纳米线在波长550 nm处存在一个较强的PL峰.本文进一步指出了蒸发源SiO粉末的颗粒度和蒸发温度对纳米线生长有强烈的影响.     

SiC/SiO2核壳结构纳米线制备及光学性质研究

采用简单的气固反应,在Si衬底上成功制备了SiC一维纳米材料。用扫描电子显微镜(SEM)、透射电子显微镜(TEM)、X射线电子能谱(EDX)、X射线衍射谱(XRD)和光致发光谱(PL)等手段研究了材料的表面形貌、结构组成和光学性质。研究结果表明,制备的纳米材料为SiC/SiO2核壳结构纳米线,在室温时发射中心波长分别为380nm和505nm的紫外峰和绿光带。经分析认为,波长380nm的紫外峰来源于SiO2中的O空位缺陷;而中心波长505nm的绿光带则来源于受量子尺寸效应影响并包覆了SiO2外壳的SiC内核。     

SiO2/4H-SiC(0001)界面过渡区的ADXPS研究

采用角依赖X射线光电子谱技术(ADXPS)对高温氧化SiO2/4H-SiC(0001)界面过渡区的组成、成分分布等进行了研究.通过控制1%浓度HF酸刻蚀氧化膜的时间,制备出超薄膜(1～1.5nm)样品,同时借助标准物对照分析,提高了谱峰分解的可靠性.结果显示,高温氧化形成的SiO2/4H-SiC(0001)界面,同时存在着Si1+,Si2+,Si33+3种低值氧化物,变角分析表明,一个分层模型适合于描述该过渡区的成分分布.建立了过渡区的原子级模型并计算了氧化膜厚度.结合过渡区各成分含量的变化及电容-电压(C-V)测试分析,揭示了过渡区成分与界面态的直接关系.     

SiO2/4H-SiC(0001)界面过渡区的ADXPS研究

采用角依赖X射线光电子谱技术(ADXPS)对高温氧化SiO2/4H-SiC(0001)界面过渡区的组成、成分分布等进行了研究.通过控制1%浓度HF酸刻蚀氧化膜的时间,制备出超薄膜(1～1.5nm)样品,同时借助标准物对照分析,提高了谱峰分解的可靠性.结果显示,高温氧化形成的SiO2/4H-SiC(0001)界面,同时存在着Si1 ,Si2 ,Si33 3种低值氧化物,变角分析表明,一个分层模型适合于描述该过渡区的成分分布.建立了过渡区的原子级模型并计算了氧化膜厚度.结合过渡区各成分含量的变化及电容-电压(C-V)测试分析,揭示了过渡区成分与界面态的直接关系.     

Synthesis and growth mechanism of oriented amorphous SiO2 nanowires

Based on the catalytic property of gold, seemingly oriented amorphous SiO₂ nanowires were synthesized by radio frequency (RF) magnetron sputtering technique and annealing at 1100 °C for 40 min in the presence of a nitrogen flow using Silicon(Si) powder as the Si source. The length and diameter of nanowires growth are almost uniform, which are about 30 μm and 35 nm respectively. The growth of nanowires is consistent with vapor–liquid–solid mechanism, with Au particles being observed to remain at the tip of nanowires. They were characterized by scanning electron microscopy, transmission electron microscopy, selected area electron diffraction and photoluminescence. A sharp intensive green emission peak at around 519 nm was observed with an excitation wavelength of 325 nm;this has been ascribed to an oxygen deficiency.     

氧化后退火技术对SiO2/4H-SiC界面态密度的影响

采用等离子体增强化学气相沉积(PECVD)低温处理和高温快速退火的技术,研究了退火条件对SiO2/4H-SiC界面态密度的影响.在n型4H-SiC外延片上高温干氧氧化50 nm厚的SiO2层并经N2原位退火,随后在PECVD炉中对样品进行350℃退火气氛为PH3,N2O,H2和N2的后退火处理,之后进行高温快速退火,最后制备Al电极4H-SiC MOS电容.I-V和C-V测试结果表明,各样品的氧化层击穿场强均大于9 MV/cm,PH3处理可以降低界面有效负电荷和近界面氧化层陷阱电荷,但PH3处理样品的界面态密度比N2O处理的结果要高.经N2O氛围PECVD后退火样品在距离导带0.2和0.4 eV处的界面态密度分别约为1.7× 1012和4×1011eV-1·cm-2,有望用于SiC MOSFET器件的栅氧处理.     

nc-SiC/SiO_2镶嵌薄膜材料的制备、结构和发光特性

采用二氧化硅/碳化硅复合靶,用射频磁控共溅射技术和后高温退火的方法在Si(111)衬底上制备了碳化硅纳米颗粒/二氧化硅基质(nc-SiC/SiO2)镶嵌结构薄膜材料。用X射线衍射(XRD),傅里叶红外吸收(FTIR),扫描电子显微镜(SEM)和光致发光(PL)实验分析了薄膜的微结构以及光致发光特性。实验结果表明,样品薄膜经高温退火后,部分无定形SiC发生晶化,形成β-SiC纳米颗粒而较均匀地镶嵌在SiO2基质中。以280nm波长光激发薄膜表面,有较强的365nm的紫外光发射以及458nm和490nm处的蓝光发射,其发光强度随退火温度的升高显著增强,发光归结为薄膜中与Si—O相关的缺陷形成的发光中心。     

Synthesis and properties of Fe3O4/SiO2/TiO2 nanocomposites by hydrothermal synthetic method

Fe₃O₄/SiO₂/TiO₂ nanocomposites with well-defined core-shell structures were successfully prepared by a facile hydrothermal synthetic method for titania coating on Fe₃O₄/SiO₂ magnetic core. The as-prepared Fe₃O₄/SiO₂/TiO₂ composite particles were characterized by X-ray diffraction (XRD),transmission electron microscopy (TEM),Fourier transform infrared spectroscopy (FT-IR). The results showed that Fe₃O₄/SiO₂/TiO₂ was well crystallized at 140 °C with well-defined core-shell structures. Fe₃O₄/SiO₂/TiO₂ nanocomposites as well as pure TiO₂ showed good photocatalytic performance in the decolorization of methyl orange aqueous solution. Magnetic core coated by SiO₂ and TiO₂ layer still retained the good magnetic properties (Ms:3.04 emu g^-1) to facilitate catalyst recovery using external magnetic field.     

Successful enhancement of lifetime for SiO/sub 2/ on 4H-SiC by N/sub 2/O anneal

Time-dependent dielectric breakdown (TDDB) measurement by constant current stress has been performed to investigate the oxide (SiO/sub 2/) reliability grown on n-type 4H-SiC. At 300K, the intrinsic injected charge to breakdown (Q/sub BD/) of thermally grown SiO/sub 2/ in wet O/sub 2/ ambience is about 0.1 C/cm/sup 2/, whereas N/sub 2/O anneal after the thermal oxidation results in the drastic improvement of the reliability. The intrinsic Q/sub BD/ of N/sub 2/O annealed SiO/sub 2/ is found to be 10 C/cm/sup 2/, which is two orders of magnitude larger than that of the oxide without N/sub 2/O anneal, suggesting that the quality of SiO/sub 2/ and/or SiO/sub 2//SiC interface is improved. TDDB measurement has been also performed at high temperatures up to 423 K. The activation energy of oxide lifetime estimated from time to failure of 80% is 0.35 and 0.10 eV for the oxide with and without N/sub 2/O anneal, respectively.     

SiO2/SiC界面对4H-SiC n-MOSFET反型沟道电子迁移率的影响

提出了一种基于器件物理的4H-SiC n-MOSFET反型沟道电子迁移率模型.该模型包括了界面态、晶格、杂质以及表面粗糙等散射机制的影响,其中界面态散射机制考虑了载流子的屏蔽效应.利用此模型,研究了界面态、表面粗糙度等因素对迁移率的影响,模拟结果表明界面态和表面粗糙度是影响沟道电子迁移率的主要因素.其中,界面态密度决定了沟道电子迁移率的最大值,而表面粗糙散射则制约着高场下的电子迁移率.该模型能较好地应用于器件模拟.     

SiO_2/SiC界面对4H-SiC n-MOSFET反型沟道电子迁移率的影响

提出了一种基于器件物理的4 H- Si C n- MOSFET反型沟道电子迁移率模型.该模型包括了界面态、晶格、杂质以及表面粗糙等散射机制的影响,其中界面态散射机制考虑了载流子的屏蔽效应.利用此模型,研究了界面态、表面粗糙度等因素对迁移率的影响,模拟结果表明界面态和表面粗糙度是影响沟道电子迁移率的主要因素.其中,界面态密度决定了沟道电子迁移率的最大值,而表面粗糙散射则制约着高场下的电子迁移率.该模型能较好地应用于器件模拟.     

退火对6H-SiC晶体的光学性质及光致发光的影响

利用双光束分光光度计对高温退火前后的掺氮和未掺杂6H-SiC晶体的透射及反射谱进行了分析,发现无论退火前后,两种SiC晶体在紫外区均存在强烈的吸收.在可见和近红外区,尤其是未掺杂SiC样品具有很高的透射率,退火后,两种样品的透射率均明显提高.利用荧光分光光度计研究了退火前后样品的光致发光特性,结果表明:在390 nm Xe灯激发下.两种样品在417 nm和436 nm处均可观察到蓝光发射,417 nm处的发光归结于C簇的发光,436 nm处的发光机理为从晶粒的核心激发载流子转移到晶粒表面,并与其上的发光中心辐射复合;同时,掺氮SiC在575 nm处还存在发光峰,为氮掺入后引起的非晶SiC的发光,在325 nm Xe灯激发下,525 nm处存在发光峰,其详细发光机制有待进一步研究.     

Effect of process variations and ambient temperature on electron mobility at the SiO/sub 2//4H-SiC interface

We report the effect of processing variables on the inversion layer electron mobility of (0001)-oriented 4H-SiC n-channel MOSFETs. The process variables investigated include: i) implant anneal temperature and ambient; ii) oxidation procedure; iii) postoxidation annealing in nitric oxide (NO); iv) type of gate material, and v) high-temperature ohmic contact anneal. Electron mobility is significantly increased by a postoxidation anneal in NO, but other process variations investigated have only minor effects on the channel mobility. We also report the temperature dependence of electron mobility for NO and non-NO annealed n-channel MOSFETs.     

CdSe/ZnSe量子点的合成与荧光特性

采用低温成核生长与一步法相结合的方式合成了CdSe/ZnSe核壳结构量子点,并通过吸收光谱、荧光光谱、X射线衍射等分析手段证明了ZnSe壳层包覆成功.对加入空穴传输材料后CdSe/ZnSe量子点的荧光变化情况进行了深入的研究.稳态光谱结果表明.空穴传输材料对量子点发光有较强的淬灭作用;时间分辨光谱结果显示,随着空穴传输材料分子浓度的增加,量子点的荧光寿命明显缩短,其荧光淬灭过程可以解释为静态淬灭和动态淬灭过程.静态淬灭来源于量子点表面与空穴传输材料间的相互作用;而动态淬灭则来源于量子点到空穴传输材料的空穴转移过程.因此,量子点的壳层结构及空穴传输材料的种类对量子点的荧光淬灭起关键作用.     

High resolution observation of defects at SiO2/4H-SiC interfaces using time-resolved scanning nonlinear dielectric microscopy

High resolution observation of density of interface states (D_it) at SiO₂/4H-SiC interfaces was performed by time-resolved scanning nonlinear dielectric microscopy (tr-SNDM). The sizes of the non-uniform contrasts observed in the map of D_it were in the order of several tens of nanometres, which are smaller than the value reported in the previous study (>100 nm). The simulation of the tr-SNDM measurement suggested that the spatial resolution of tr-SNDM is down to the tip radius of the cantilever used for the measurement and can be smaller than the lateral spread of the depletion layer width.     

多孔状的Eu:Y2O3/SiO2的合成与光学性能

采用凝胶溶胶法合成了亚微米尺寸的多孔Eu:Y2O3/SiO2(摩尔比Eu:Y2O3:SiO2=5:100:100)样品,并用扫描电镜、傅立叶变换红外光谱仪、拉曼光谱仪和荧光光谱仪对其形貌、结构和光学性能进行了研究.结果表明,退火后的合成产物是一种含有大量孔隙的块体.这是因为在退火之后,样品中绝大部分的-OH、-C=O基团和一些晶格缺陷等被消除.荧光光谱测量结果显示,样品在退火前Eu3 离子基本上不发光,但在经过720℃下退火6 h以后.Eu3 离子发出的荧光非常强.     

Effect of post oxidation annealing on electrical characteristics of Ni/SiO2/4H-SiC capacitor with varying oxide thickness

This paper describes an experimental observation of post oxidation annealing (POA) treatment on current-voltage and capacitance-voltage characteristics of Ni/SiO₂/4H-SiC system with varying oxide thickness. The leakage current of fabricated structures shows an asymmetric behavior having noticeable effect of POA with the polarity of gate bias (+V or −V at the anode). When compared with the conventional wet oxidation, the POA processes greatly reduce interface-state density and enhance reliability of devices. An extensive increment in the barrier height at SiO₂/4H-SiC interface was observed due to POA, which resulted into lower forward leakage current. A significant improvement in the oxide charges are also demonstrated using C-V characteristics of POA treated structures.