Phase Equilibria in the Ga2O3In2O3 System

Subsolidus phase relationships in the Ga₂O₃–In₂O₃ system were studied by X-ray diffraction and electron probe microanalysis (EPMA) for the temperature range of 800°–1400°C. The solubility limit of In₂O₃ in the β-gallia structure decreases with increasing temperature from 44.1 ± 0.5 mol% at 1000°C to 41.4 ± 0.5 mol% at 1400°C. The solubility limit of Ga₂O₃ in cubic In₂O₃ increases with temperature from 4.X ± 0.5 mol% at 1000°C to 10.0 ± 0.5 mol% at 1400°C. The previously reported transparent conducting oxide phase in the Ga-In-O system cannot be GaInO₃, which is not stable, but is likely the In-doped β-Ga₂O₃ solid solution.     

Effects of Sm2O3 and Gd2O3+ Nd2O3 on Electromechanical Properties of PbTiO3 Ceramics

The electromechanical properties of PbTiO₃ ceramics, modified by substitution of Sm or Gd + Nd (same average atomic radius as Sm) for Pb, were studied in the range of 6% to 14% substitution. The modified PbTiO₃ ceramics were stable, and the Curie temperature decreased linearly over this composition range. The 10% Sm composition had a large anisotropy in the coupling factor ratio, k _t / k _p , and a similar, but weaker, effect developed for 12% (1/2 Gd + 1/2 Nd). This indicates that other than average ion size may influence the electromechanical coupling factor ratio.     

Vaporization Studies of the La2O3–Ga2O3 System

The vaporization of the samples of the compositions Ga₂O₃+ LaGaO₃, LaGaO₃+ La₄Ga₂O₉, and La₄Ga₂O₉+ La₂O₃ was investigated using Knudsen effusion mass spectrometry in the temperature range 1494–1937 K. The partial pressures of the gaseous species O₂, Ga, GaO, Ga₂O, and LaO were determined over the samples investigated. The equilibrium partial pressures were used for the calculation of the thermodynamic activities of the components at 1700 K. Gibbs energies of formation of LaGaO₃( s ) and La₄Ga₂O₉( s ) at 1700 K from the component oxides were derived from the thermodynamic activities as −46.4 ± 4.7 and −99.2 ± 7.9 kJ·mol⁻¹, respectively. The results were compared with the literature data obtained using other methods.     

Subsolidus Phase Relations in the Ga2O3-In2O3-SnO2 System

Subsolidus phase relationships in the Ga₂O₃–In₂O₃–SnO₂ system were studied by X-ray diffraction over the temperature range 1250–1400°C. At 1250°C, several phases are stable in the ternary system, including Ga₂O₃( ss ), In₂O₃( ss ), SnO₂, Ga_{3− x} In_{5+ x} Sn₂O₁₆, and several intergrowth phases that can be expressed as Ga_{4−4 x} In_{4 x} Sn _{n −4}O_{2 n −2} where n is an integer. An In₂O₃–SnO₂ phase and Ga₄SnO₈ form at 1375°C but are not stable at 1250°C. GaInO₃ did not form over the temperature range 1000–1400°C.     

Effect of Small Additions of Al2O3 and Ga2O3 on the Immiscibility Temperature of Na2O-SiO2 Glasses

Alumina and gallia were substituted separately for Na₂O in amounts of 0.2, 0.5, 1.0, 1.5, 2.0, and 3.0 wt% in three Na₂O-SiO₂ glass compositions (82, 84, and 86 wt% SiO₂) within the immiscibility region. The immiscibility regions for each system extend to ∼1.5 mol% of the added oxide. In general, the addition reduced the immiscibility temperature ( T _m), but at the edge of the immiscibility region (82% SiO₂) the Na₂O loss effect initially increased T _m. A structural model of the miscibility of Al₂O₃ added to silicate glasses is presented.     

Electrical Properties of ZnO-Bi2O3 Ceramics

The nonlinear volt-ampere characteristics and small-signal ac capacitance and resistance of sintered ZnO containing 0.5 mol% Bi₂O₃ were measured. Many of the electrical properties are related directly to the microstructure, which consists of conductive ZnO grains separated by a continuous amorphous Bl₂O₃, phase. The origin of the nonlinear conduction in the intergranular phase was confirmed by experiments with evaporated thin films. The proposed conduction mechanism in varistors containing ZnO and Bi₂O₃ is a combination of hopping and tunneling in the amorphous phase.     

Subsolidus Phase Relationships in the Ga2O3–Al2O3–TiO2 System

Subsolidus phase relationships in the Ga₂O₃–Al₂O₃–TiO₂ system at 1400°C were studied using X-ray diffraction. Phases present in the pseudoternary system include TiO₂ (rutile), Ga_{2−2 x} Al_{2 x} O₃ ( x ≤0.78 β-gallia structure), Al_{2−2 y} Ga_{2 y} O₃ ( y ≤0.12 corundum structure), Ga_{2−2 x} Al_{2 x} TiO₅ (0≤ x ≤1 pseudobrookite structure), and several β-gallia rutile intergrowths that can be expressed as Ga_{4−4 x} Al_{4 x} Ti _{n −4}O_{2 n −2} ( x ≤0.3, 15≤ n ≤33). This study showed no evidence to confirm that aluminum substitution of gallium stabilizes the n =7 β-gallia–rutile intergrowth as has been mentioned in previous work.     

Grain Growth of ZnO in ZnO-Bl2O3 Ceramics with Ai2O3 Additions

Grain growth of ZnO during liquid-phase sintering of a ZnO-6 wt% Bi₂O₃ ceramic was investigated for A1₂O₃ additions from 0.10 to 0.80 wt%. Sintering in air for 0.5 to 4 h at 900° to 1400°C was studied. The AI₂O₃ reacted with the ZnO to form ZnAl₂O₄ spinel, which reduced the rate of ZnO grain growth. The ZnO grain-growth exponent was determined to be 4 and the activation energy for ZnO grain growth was estimated to be 400 kJ/mol. These values were compared with the activation parameters for ZnO grain growth in other ceramic systems. It was confirmed that the reduced ZnO grain growth was a result of ZnAl₂O₄ spinel particles pinning the ZnO grain boundaries and reducing their mobility, which explained the grain-growth exponent of 4. It was concluded that the 400 kJ/mol activation energy was related to the transport of the ZnAl₂O₄ spinel particles, most probably controlled by the diffusion of O^2- in the ZnAl₂O₄ spinel structure.     

Cubic-to-Tetragonal Displacive Transformation in Gd2O3–Bi2O3 Ceramics

Gd₂O₃-doped Bi₂O₃ polycrystalline ceramics containing between 2 and 7 mol% Gd₂O₃ were fabricated by pressureless sintering powder compacts. The as-sintered samples were tetragonal at room temperature. Hightemperature X-ray diffraction (XRD) traces showed that the samples were cubic at elevated temperatures and transformed into the tetragonal polymorph during cooling. On the basis of conductivity measurements as a function of temperature and differential scanning calorimetry (DSC), the cubic → tetragonal as well as tetragonal → cubic → teansition temperatures were determined as a function of Gd₂O₃ concentration. The cubic → tetragonal transformation appears to be a displacive transformation. It was observed that additions of ZrO₂ as a dopant, which is known to suppress cation interdiffusion in rare-earth oxide–Bi₂O₃ systems, did not suppress the transition, consistent with it being a displacive transition. Annealing of samples at temperatures 660°C for several hundred hours led to decomposition into a mixture of monoclinic and rhombohedral phases. This shows that the tetragonal polymorph is a metastable phase.     

Slow Crack Growth Behavior in Transformation-Toughened Al2O3-ZrO2(Y2O3) Ceramics

Significant increases in the critical fracture toughness (K _IC ) over that of alumina are obtained by the stress-induced phase transformation in partially stabilized ZrO₂ particles which are dispersed in alumina. More importantly, improved slow crack growth resistance is observed in the alumina ceramics containing partially stabilized ZrO₂ particles when the stress-induced phase transformation occurs. Thus, increasing the contribution of the ZrO₂ phase transformation by tailoring the Y₂O₃ stabilizer content not only increases the critical fracture toughness (K_IC) but also the K _Ia to initiate slow crack growth. For example, crack velocities ( v )≥10^–9 m/s are obtained only at K _Ia≥5 MPa.m^1/2 in transformation-toughened ( K _IC=8.5 MPa.m^1/2) composites vs K _Ia≥2.7 MPa.m^1/2 for comparable velocities in composites where the transformation does not occur ( K _IC=4.5 MPa.m^1/2). This behavior is a result of crack-tip shielding by the dissipation of strain energy in the transformation zone surrounding the crack. The stress corrosion parameter n is lower and A greater in these fine-grained composite materials than in fine-grained aluminas. This is a result of the residual tensile stresses associated with larger (≥1 μm) monoclinic ZrO₂ particles which reside along the intergranular crack path.     

Grain-Oriented PbNb2O6 Ceramics

Grain-oriented ceramics of ferroelectric lead metaniobate have been prepared by molten salt synthesis of anisotropic crystallites followed by doctor blade casting. The sintered ceramics have an orthorhombic texture with elongated c axis grains parallel to the casting direction. This allows efficient poling in directions perpendicular to the tape.     

La2Ti2O7 Ceramics

La₂Ti₂O₇ powders were prepared using three different techniques. Single-phase material was obtained at 1150°C by calcination of mixed oxides, at 1000°C by molten salt synthesis, and at 850°C by evaporative decomposition of solutions. Particle sizes and morphologies of the powders differed substantially, as did the sintered microstructures and dielectric properties. Very dense (99%), translucent, grain-oriented lanthanum titanate was fabricated by hot-forging at 1300°C under a 200-kg load. Anisotropy was demonstrated by X-ray diffraction, scanning electron microscopy, thermal expansion, and dielectric measurements.     

Fabrication of Transparent, Sintered Sc2O3 Ceramics

We report here the fabrication of transparent Sc₂O₃ ceramics via vacuum sintering. The starting Sc₂O₃ powders are pyrolyzed from a basic sulfate precursor (Sc(OH)_2.6(SO₄)_0.2·H₂O) precipitated from scandium sulfate solution with hexamethylenetetramine as the precipitant. Thermal decomposition behavior of the precursor is studied via differential thermal analysis/thermogravimetry, Fourier transform infrared spectroscopy, X-ray diffractometry, and elemental analysis. Sinterability of the Sc₂O₃ powders is studied via dilatometry. Microstructure evolution of the ceramic during sintering is investigated via field emission scanning electron microscopy. The best calcination temperature for the precursor is 1100°C, at which the resultant Sc₂O₃ powder is ultrafine (∼85 nm), well dispersed, and almost free from residual sulfur contamination. With this reactive powder, transparent Sc₂O₃ ceramics having an average grain size of ∼9 μm and showing a visible wavelength transmittance of ∼60–62% (∼76% of that of Sc₂O₃ single crystal) have been fabricated via vacuum sintering at a relatively low temperature of 1700°C for 4 h.     

Densification of Cr2O3-ZrO2 Ceramics by Sintering

Cr₂O₃ and ZrO₂ were mixed in various ratios and pressed to form compacts, which were then sintered in carbon powder. Compacts with >30 wt% Cr₂O₃ were sintered to densities >98% of true density at 1500°C. This method of sintering in carbon powder can be used to prepare very dense Cr₂O₃-ZrO₂ ceramics at a relatively low temperature, (∼1500°C) without additives.