Investigation on 2D photonic crystal-based eight-channel wavelength-division demultiplexer

In this paper, eight-channel wavelength-division demultiplexer (WDDM) is proposed and designed using two-dimensional photonic crystal (2DPC) ring resonator whose corresponding functional parameters such as transmission efficiency, resonant wavelength, Q factor are investigated. The proposed structure consists of bus waveguide, dropping waveguide and square ring resonators. Eight different channels are dropped by altering the cavity size and radius of the defect rods. The plane-wave expansion (PWE) and finite-difference time-domain (FDTD) methods are employed to analyse the photonic band gap (PBG) of periodic and non-periodic structure and to arrive normalized transmission spectra, respectively. The resonant wavelengths of eight-channel demultiplexers are 1496.9, 1502.3, 1506.9, 1512.3, 1515.0, 1520.4, 1525.3 and 1530.6 nm. The average transmission efficiency, Q factor and spectral width of proposed demultiplexer are 81%, 825 and 1.8 nm, respectively. The mean channel spacing is about 4.2 nm. The size of the demultiplexer is small; hence, it can be utilized for photonic integrated circuits (PIC).     

Microwave Dielectric Properties of BiCu<Subscript>2</Subscript>PO<Subscript>6</Subscript> Ceramics with Low Sintering Temperature

A BiCu₂PO₆ microwave dielectric ceramic was prepared using a solid-state reaction method. As the sintering temperature increased from 800°C to 880°C, the bulk density of BiCu₂PO₆ ceramic increased from 6.299 g/cm³ to 6.366 g/cm³; the optimal temperature was 860°C. The best microwave dielectric properties [permittivity (? _r ) = ～16, a quality factor (Q × f) = ～39,110 GHz and a temperature coefficient of resonant frequency (τ _f ) = ～?59 ppm/°C] were obtained in the ceramic sintered at 860°C for 2 h. Then, TiO₂ with a positive τ _f (～+400 ppm/°C) was added to compensate the τ _f value. The composite material was found to have a near-zero τ _f (+2.7 ppm/°C) and desirable microwave properties (? _r  = 19.9, Q × f = 24,885 GHz) when synthesized at a sintering temperature of 880°C. This system could potentially be used for low-temperature co-fired ceramics technology applications.     

A Rectangular SRR Switched Slotted Microstrip Patch for Frequency Diversity Application

Planar antenna with a specific resonant mode is essential to meet the diversity demand for wireless communication. This paper presents modeling and experimental validation of a microstrip antenna design in which multiple resonant frequencies are excited based on different negative permeability response of the rectangular split ring resonator (SRR). The antenna geometry consists of a slotted patch with split ring resonator loaded between its two arms. The patch was fabricated on FR-substrate of relative permittivity ε_r?=?4.4, and has a size of 30.5 mm?×?34 mm. In the antenna desing, PIN diodes connect the outer ring and inner ring resonator of the SRR to the adjacent arms of the patch. Under various bias conditions, quad-band resonance was observed at 2.07 GHz, 2.11 GHz, 2.31 GHz, and 2.46 GHz. The measured S₁₁ results are found comparable to the simulated data, and demonstrate proper functioning of the proposed antenna with stable gain and radiation patterns.     

RF channelizer architectures using 3-way iterative down conversion for concurrent or fast-switching spectrum analysis

A wide-band RF channelizer architecture using the concept of 3-way iterative down-conversion is introduced. An example RF channelizer implementation splits the input spectrum of 0.6–9 GHz into 7 channels each with a 1.2 GHz bandwidth. This RF channelizer implementation has the ability of concurrently down-converting 3 channels enabling multi-Gbps aggregate data reception. It further demonstrates the ability to rapidly switch from receiving one channel to another which is crucial for rapid spectrum analysis. A prototype of the RF channelizer has been fabricated in a 65 nm standard CMOS process. A 400 Mbps (BPSK) data reception has been demonstrated by down-converting two channels concurrently. Channel switching can be as fast as 8 ns and is always faster than \(1\,\upmu s\). The chip occupies an area of 2 mm \(\times\) 1 mm and consumes an average power of 435 mW while offering a dynamic range between 58 and 63 dB.     

Free-Standing β-Ga<Subscript>2</Subscript>O<Subscript>3</Subscript> Thin Diaphragms

Free-standing, very thin, single-crystal β-gallium oxide (β-Ga₂O₃) diaphragms have been constructed and their dynamical mechanical properties characterized by noncontact, noninvasive optical measurements harnessing the multimode nanomechanical resonances of these suspended nanostructures. We synthesized single-crystal β-Ga₂O₃ using low-pressure chemical vapor deposition (LPCVD) on a 3C-SiC epilayer grown on Si substrate at temperature of 950°C for 1.5 h. The synthesized single-crystal nanoflakes had widths of ～ 2 μm to 30 μm and thicknesses of ～ 20 nm to 140 nm, from which we fabricated free-standing circular drumhead β-Ga₂O₃ diaphragms with thicknesses of ～ 23 nm to 73 nm and diameters of ～ 3.2 μm and ～ 5.2 μm using a dry stamp-transfer technique. Based on measurements of multiple flexural-mode mechanical resonances using ultrasensitive laser interferometric detection and performing thermal annealing at 250°C for 1.5 h, we quantified the effects of annealing and adsorption of atmospheric gas molecules on the resonant characteristics of the diaphragms. Furthermore, we studied the effects of structural nonidealities on these free-standing β-Ga₂O₃ nanoscale diaphragms. We present extensive characterization of the mechanical and optical properties of free-standing β-Ga₂O₃ diaphragms, paving the way for realization of resonant transducers using such nanomechanical structures for use in applications including gas sensing and ultraviolet radiation detection.     

Design and Simulation of a Novel Micromachined Frequency Reconfigurable Microstrip Patch Antenna

In this paper, a novel model of a frequency reconfigurable microstrip patch antenna based on MEMS (microelectromechanical system) technology is introduced. Fabrication process of the proposed antenna is comprised of bulk and surface micromachining. Patch of the antenna is deposited over a silicon platform. The platform is created by structuring the silicon membrane which is formed through bulk micromachining of a silicon chip. The patch and the platform beneath it are discretized to facilitate their vertical displacement over underside air gap. Thermal actuation is used as driving mechanism. Operational mechanism of the antenna is such that by downward relocation of the patch, its resonant frequency shifts downward. Thermal actuators are connected to the platform and applying voltage to them cause downward shift in resonant frequency of the antenna. FEM (finite element method) simulations confirm mechanical and microwave performances of the antenna which are investigated by theoretical analyses. From mechanical point of view, antenna has tolerable mechanical stability and microwave point of view indicates that return losses are good (below $-$ 10 dB) and radiation patterns are very close to each other with reasonable gains. Moreover VSWR is less than 2 throughout the frequency tuning range. In the proposed antenna by applying a CMOS compatible voltage in the range of 0–4.5 V to each thermal actuator, the resonant frequency of the antenna shifts from 17.37 GHz in up-sate position to 15.07 GHz in down-state position. As a result of this frequency shift, a frequency tuning range of 2.3 GHz with bandwidths of 3.9 % in up-state and 1.4 % in down-state positions is achieved.     

A 3.1–10.6 GHz UWB LNA Based on Self Cascode Technique for Improved Bandwidth and High Gain

In this work, we present a self cascode based ultra-wide band (UWB) low noise amplifier (LNA) with improved bandwidth and gain for 3.1–10.6 GHz wireless applications. The self cascode (SC) or split-length compensation technique is employed to improve the bandwidth and gain of the proposed LNA. The improvement in the bandwidth of SC based structure is around 1.22 GHz as compared to simple one. The significant enhancement in the characteristics of the introduced circuit is found without extra passive components. The SC based CS–CG structure in the proposed LNA uses the same DC current for operating first stage transistors. In the designed UWB LNA, a common source (CS) stage is used in the second stage to enhance the overall gain in the high frequency regime. With a standard 90 nm CMOS technology, the presented UWB LNA results in a gain \(\hbox {S}_{21}\) of \(20.10 \pm 1.65\,\hbox {dB}\) across the 3.1–10.6 GHz frequency range, and dissipating 11.52 mW power from a 1 V supply voltage. However, input reflection, \(\hbox {S}_{11}\), lies below \(-\,10\) dB from 4.9–9.1 GHz frequency. Moreover, the output reflection (\(\hbox {S}_{22}\)) and reverse isolation (\(\hbox {S}_{12}\)), is below \(-\,10\) and \(-\,48\) dB, respectively for the ultra-wide band region. Apart from this, the minimum noise figure (\(\hbox {NF}_{min}\)) value of the proposed UWB LNA exists in the range of 2.1–3 dB for 3.1–10.6 GHz frequency range with a a small variation of \(\pm \,0.45\,\hbox {dB}\) in its \(\hbox {NF}_{min}\) characteristics. Linearity of the designed LNA is analysed in terms of third order input intercept point (IIP3) whose value is \(-\,4.22\) dBm, when a two tone signal is applied at 6 GHz with a spacing of 10 MHz. The other important benefits of the proposed circuit are its group-delay variation and gain variation of \(\pm \,115\,\hbox {ps}\) and \(\pm \,1.65\,\hbox {dB}\), respectively.     

BST Varactor Loaded Frequency Agile Stacked Circular Microstrip Radiator

A new frequency agile BST varactor loaded stacked circular microstrip antenna is presented. The antenna is analysed using extended cavity model. One of two bands of antenna is tunable with the help of BST varactor. The upper band is useful for WiMAX and lower band for other wireless communication systems. Various antenna parameters like return loss, resonant frequency, frequency agility etc. have been investigated. The simulated results agree well with the numerical data. A frequency agility of 60.64 % is achieved, which is better than simple Varactor diode loaded antenna. Lowest resonant frequency of 0.866 GHz is obtainable that shows a significant physical area reduction. The group delay of S $_{11}$ remains constant for entire band of operation.     

All-fiber sensor based on few-mode fiber offset splicing structure cascaded with long-period fiber grating for curvature and acoustic measurement

An all-fiber sensor based on a single-mode–few-mode–single-mode fiber offset splicing structure cascaded with long-period fiber grating is proposed and demonstrated for curvature and acoustic signal measurement. High-order mode is inspired in the few-mode fiber by the offset splicing structure and coupled into the LPFG, resulting in a splitting into two dips of LPFG attenuation band, which are more sensitive to the external environment change. The results of the curvature sensing experiment show that the intensity of the two resonant dips has a linear response to curvature in the range of 0.124–0.304 \({\hbox {m}}^{-1}\), and the sensitivity is about 93.01 \({\hbox {dB/m}}^{-1}\), which is one order of magnitude higher than congeneric curvature sensors demonstrated by other researchers before. Based on the curvature sensing mechanism, the sensor is also demonstrated for acoustic measurement in the range 110–230 Hz. The sensor shows a sensitivity of about 15 mV/Pa at 110 Hz and 4.5 mV/Pa at other frequencies. High sensitivity and easy fabrication make it a preferable candidate for curvature and acoustic sensing in the field of structural health monitoring.     

A 0.18$$\upmu$$m CMOS voltage multiplier arrangement for RF energy harvesting

This work presents a two-stage voltage multiplier (VM) useful in RF energy harvesting based applications. The proposed circuit is based on the conventional differential drive rectifier, in which the input RF signal has been level shifted using a simple arrangement. This signal is then used to drive the next stage, which has been formed by using gate cross-coupled transistors. As a result, the load driving capability of the proposed architecture increases. The load in this work has been emulated in terms of a parallel RC circuit. The architecture has been implemented using standard 0.18 \(\mu\)m CMOS technology. The measurements of the two-stage conventional VM (CVM) and proposed VM circuits were performed at ISM frequencies 13.56, 433, 915 MHz and 2.4 GHz for R\(_L\) of values 1, 5, 10, 3 and 100 K\(\Omega\) with a fixed value of C\(_L\) equal to 20 pF. The performance evaluation has been done in terms of the power conversion efficiency (PCE) and average output DC voltage. The measured results show an improvement in PCE of 5% (minimum) for 13.56, 433 and 915 MHz frequencies, and up to 2% improvement for a frequency value of 2.4 GHz at the targeted load condition of 5 K\(\Omega ||\)20 pF, when compared with the measured results of the CVM circuit.     

A brain-spinal interface (BSI) system-on-chip (SoC) for closed-loop cortically-controlled intraspinal microstimulation

This paper presents a novel microstrip quad-channel diplexer based on stub loaded U-shape resonators, which are coupled to the step impedance feed lines. The stubs are loaded inside the U-shape cells creating extra channels without increasing the size of diplexer. The proposed diplexer is miniaturized with an overall size of 0.029 λ _g ² . It operates at 1.67, 2.54, 3.45 and 4.57 GHz for GPS, wireless and WiMAX applications. Due to its narrowband channels, it is appropriate for the modern long-range communication systems, which are widely accepted by the industry. The proposed diplexer has high performance in terms of low insertion and return losses and wide stopband. The insertion losses at the resonance frequencies are 0.5, 0.38, 0.53 and 0.58 while the common port return losses are better than ? 20 dB at all channels. In order to verify the simulation results, we fabricated and measured the designed diplexer. A good agreement between both results is obtained.     

Millimeter-wave Detectors Based on Antenna-coupled Low-barrier Schottky Diodes

The principles of construction of millimeter wave detectors based on low-barrier Schottky diodes and planar antennas are discussed. The modified planar slot antenna with low beam spillover at the resonant frequency of 94 GHz has been developed. Experiments have been carried out to investigate detecting characteristics of the diodes with differential contact resistances \( R_{j} = 1 \div 1000\;{\text{k}}\Omega \) at zero bias. Experimental data are well correspond to calculations in a simple model of detector. At \( R_{j} = 20 \div 100\;{\text{k}}\,\OmegaΩ \) the maximum of rf-to-dc voltage sensitivity - more than 10000 V/W - is obtained. At lower values of \( R_{j} = 2 \div 6\;{\text{k}}\,\Omega Ω \) a better noise equivalent power (NEP), around 10^?12 W Hz^?1/2, is predicted.     

Room-Temperature Quantum Cascade Laser: ZnO/Zn1−x Mg x O Versus GaN/Al x Ga1−x N

A ZnO/Zn_1?x Mg _x O-based quantum cascade laser (QCL) is proposed as a candidate for generation of THz radiation at room temperature. The structural and material properties, field dependence of the THz lasing frequency, and generated power are reported for a resonant phonon ZnO/Zn_0.95Mg_0.05O QCL emitting at 5.27 THz. The theoretical results are compared with those from GaN/Al _x Ga_1?x N QCLs of similar geometry. Higher calculated optical output powers [ $ {P}_{\rm{ZnMgO}} $  = 2.89 mW (nonpolar) at 5.27 THz and 2.75 mW (polar) at 4.93 THz] are obtained with the ZnO/Zn_0.95Mg_0.05O structure as compared with GaN/Al_0.05Ga_0.95N QCLs [ $ {P}_{\rm{AlGaN}} $  = 2.37 mW (nonpolar) at 4.67 THz and 2.29 mW (polar) at 4.52 THz]. Furthermore, a higher wall-plug efficiency (WPE) is obtained for ZnO/ZnMgO QCLs [24.61% (nonpolar) and 23.12% (polar)] when compared with GaN/AlGaN structures [14.11% (nonpolar) and 13.87% (polar)]. These results show that ZnO/ZnMgO material is optimally suited for THz QCLs.     

Measurement of Thermoelectric Properties of Single Semiconductor Nanowires

We have measured the thermopower and the thermal conductivity of individual silicon and indium arsenide nanowires (NWs). In this study, we evaluate a self-heating method to determine the thermal conductivity λ. Experimental validation of this method was performed on highly n-doped Si NWs with diameters ranging from 20 nm to 80 nm. The Si NWs exhibited electrical resistivity of $\rho = (8\pm4)\, \hbox{m}\Upomega\,\hbox{cm}$ ρ = ( 8 ± 4 ) m Ω cm at room temperature and Seebeck coefficient of ?(250 ± 100) μV/K. The thermal conductivity of Si NWs measured using the proposed method is very similar to previously reported values; e.g., for Si NWs with 50 nm diameter, λ = 23 W/(m K) was obtained. Using the same method, we investigated InAs NWs with diameter of 100 nm and resistivities of $\rho = (25\pm5)\, \hbox{m}\Upomega\,\hbox{cm}$ ρ = ( 25 ± 5 ) m Ω cm at room temperature. Thermal conductivity of λ = 1.8 W/(m K) was obtained, which is about 20 to 30 times smaller than in bulk InAs. We analyzed the accuracy of the self-heating method by means of analytical and numerical solution of the one-dimensional (1-D) heat diffusion equation taking various loss channels into account. For our NWs suspended from the substrate with low-impedance contacts the relative error can be estimated to be ≤25%.     

Spectral and power efficiency investigation in single- and multi-line-rate optical wavelength division multiplexed (WDM) networks

In order to tackle the increasing heterogeneous global Internet traffic, mixed-line-rate (MLR) optical wavelength division multiplexed (WDM) networks have emerged as the cost- and power-efficient solution. In MLR WDM networks, channels are structured as sub-bands, each of which consists of wavelengths operating at a similar data rate. By reducing the (1) spacing within a sub-band, or (2) spacing between sub-bands operating at different data rates, spectral efficiency can be improved. However, owing to high physical layer impairment levels, decrease in sub-band spacing adversely affects transmission reach of the channels, which results in higher power consumption due to requirement of increased signal regeneration. In this work, we compare power efficiency of various MLR and single-line-rate (SLR) solutions, and also investigate the trade-off that exists between spectral and power efficiency in a WDM network. Simulation results indicate that (1) for high transmission capacities, a combination of 100 Gbps transponders and 40 Gbps regenerators will obtain the highest power efficiency; (2) for long connection distances, a point of merging occurs for various SLR and MLR designs, where power consumption is independent of the frequency band distribution; and (3) for MLR systems, both spectral and power efficiency can be improved by using either shorter links with higher bandwidth assignment to 100 Gbps wavelengths, or longer links with higher bandwidth assignment to 40 Gbps wavelengths. Finally, the results indicate that focusing on spectral efficiency alone results in extra power consumption, since high quality of transmission and spectral efficiency leads to increased regeneration.     

Demonstration of using multi-band 16-QAM OFDM modulation with direct-detection in 10 GHz bandwidth for 37.3-Gb/s PON

We propose and experimentally demonstrate a 37.3 Gb/s passive optical network using four-band orthogonal-frequency-division-multiplexing (OFDM) channels within 10 GHz bandwidth. Here, the required sampling rate and resolution of digital-to-analog/analog-to-digital (DA/AD) converter are only 5 GS/s and 8 bits to accomplish the 40 Gb/s OFDM downstream rate. Moreover, to reduce the power fading and fiber chromatic dispersion issues, a $-$ 0.7 chirp parameter Mach-Zehnder modulator is used for the four-band OFDM modulation scheme. Downstream negative power penalty of $-$ 0.37 dB can be obtained at the bit error rate of $3.8\times 10^{-3}$ after 20 km standard single mode fiber transmission without dispersion compensation.     

5.18–7.42 GHz LC-VCO in subthreshold regime with low power low phase noise and immunity to PVT variations in 130 nm CMOS technology

In this paper, we propose an LC-VCO using automatic amplitude control and filtering technique to eliminate frequency noise around 2\(\omega _0\). The LC-VCO is designed with TSMC 130 nm CMOS RF technology, and biased in subthreshold regime in order to get more negative transconductance to overcome the losses in the LC-Tank and achieve less power consumption. The designed VCO operates at 5.17 GHz and can be tuned from 5.17 to 7.398 GHz, which is corresponding to 35.5% tuning range. The VCO consumes through it 495–440.5 \(\upmu\)W from 400 mV dc supply. This VCO achieves a phase noise of \(-\,122.3\) and \(-\,111.7\) dBc/Hz at 1 MHz offset from 5.17 and 7.39 GHz carrier, respectively. The calculated Figure-of-merits (FoM) at 1 MHz offset from 5.17 and 7.39 GHz is \(-\,199.7\) and \(-\,192.4\) dBc/Hz, respectively. And it is under \(-\,190.5\) dBc/Hz through all the tuning range. The FoM\(_T\) at 1 MHz offset from 5.17 GHz carrier is \(-\,210.6\) dBc/Hz. The proposed design was simulated for three different temperatures (\(-\,55\), 27, \(125\,^{\circ }\hbox {C}\)), and three supply voltages (0.45, 0.4, 0.35 V), it was concluded that the designed LC-VCO presents high immunity to PVT variations, and can be used for multi-standard wireless LAN communication protocols 802.11a/b/g.     

Structural and Electrical Properties of Ag/<Emphasis Type="Italic">n</Emphasis>-TiO<Subscript>2</Subscript>/<Emphasis Type="Italic">p</Emphasis>-Si/Al Heterostructure Fabricated by Pulsed Laser Deposition Technique

We have investigated the structural and electrical characteristics of the Ag/n-TiO₂/p-Si/Al heterostructure. Thin films of pure TiO₂ were deposited on p-type silicon (100) by optimized pulsed laser ablation with a KrF-excimer laser in an oxygen-controlled environment. X-ray diffraction analysis showed the formation of crystalline TiO₂ film having a tetragonal texture with a strong (210) plane as the preferred direction. High purity aluminium and silver metals were deposited to obtain ohmic contacts on p-Si and n-TiO₂, respectively. The current–voltage (I–V) characteristics of the fabricated heterostructure were studied by using thermionic emission diffusion mechanism over the temperature range of 80–300 K. Parameters such as barrier height and ideality factor were derived from the measured I–V data of the heterostructure. The detailed analysis of I–V measurements revealed good rectifying behavior in the inhomogeneous Ag/n-TiO₂/p-Si(100)/Al heterostructure. The variations of barrier height and ideality factor with temperature and the non-linearity of the activation energy plot confirmed that barrier heights at the interface follow Gaussian distributions. The value of Richardson’s constant was found to be 6.73 × 10⁵ Am^?2 K^?2, which is of the order of the theoretical value 3.2 × 10⁵ Am^?2 K^?2. The capacitance–voltage (C–V) measurements of the heterostructure were investigated as a function of temperature. The frequency dependence (Mott–Schottky plot) of the C–V characteristics was also studied. These measurements indicate the occurrence of a built-in barrier and impurity concentration in TiO₂ film. The optical studies were also performed using a UV–Vis spectrophotometer. The optical band gap energy of TiO₂ films was found to be 3.60 eV.     

Fabrication of a <Emphasis Type="Italic">p</Emphasis>–<Emphasis Type="Italic">n</Emphasis> Heterojunction Using Topological Insulator Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript>–Si and Its Annealing Response

A junction device has been fabricated by growing p-type Bi₂Te₃ topological insulator (TI) film on an n-type silicon (Si) substrate using a thermal evaporation technique. Annealing using different temperatures and durations was employed to improve the quality of the film, as confirmed by microstructural study using x-ray diffraction (XRD) analysis and atomic force microscopy (AFM). The p–n diode characteristics of the junction devices were studied, and the effect of annealing investigated. An improved diode characteristic with good rectification ratio (RR) was observed for devices annealed for longer duration. Reduction in the leakage or reverse saturation current (\( I_{\rm{R}} \)) was observed with increase in the annealing temperature. The forward-bias current (\( I_{\rm{F}} \)) dropped in devices annealed above 400°C. The best results were observed for the sample device annealed at 450°C for 3 h, showing figure of merit (FOM) of 0.621 with RR ≈ 504 and \( I_{\rm{R}} \) = 0.25 μA. In terms of ideality factor, the sample device annealed at 550°C for 2 h was found to be the best with \( n \) = 6.5, RR ≈ 52.4, \( I_{\rm{R}} \) = 0.61 μA, and FOM = 0.358. The majority-carrier density \( \left( {N_{\rm{A}} } \right) \) in the p-Bi₂Te₃ film of the heterojunction was found to be on the order of 10⁹/cm³ to 10¹¹/cm³, quite close to its intrinsic carrier concentration. These results are significant for fundamental understanding of device applications of TI materials as well as future applications in solar cells.     

Demonstration of a Dual-Band Mid-Wavelength HgCdTe Detector Operating at Room Temperature

In this paper, the performance of sequential dual-band mid-wavelength N⁺-n-p-p-P⁺-p-p-n-n⁺ back-to-back HgCdTe photodiode grown by metal-organic chemical vapor deposition (MOCVD) operating at room temperature is presented. The details of the MOCVD growth procedure are given. The influence of p-type separating-barrier layer on dark current, photocurrent and response time was analyzed. Detectivity without immersion D^* higher than 1 × 10⁸ cmHz^1/2/W was estimated for λ_Peak = 3.2 μm and 4.2 μm, respectively. A response time of τ_s ～ 1 ns could be reached in both MW1 and MW2 ranges for the optimal P⁺ barrier Cd composition at the range 0.38–0.42, and extra series resistance related to the processing R_Series equal to 500 Ω.