Ab␣Initio Study of Aluminium Impurity and Interstitial-Substitutional Complexes in Ge Using a Hybrid Functional (HSE)

The results of an ab?initio modelling of aluminium substitutional impurity (\({\hbox {Al}}_{\rm Ge}\)), aluminium interstitial in Ge [\({\hbox {I}}_{\rm Al}\) for the tetrahedral (T) and hexagonal (H) configurations] and aluminium interstitial-substitutional pairs in Ge (\({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\)) are presented. For all calculations, the hybrid functional of Heyd, Scuseria, and Ernzerhof in the framework of density functional theory was used. Defects formation energies, charge state transition levels and minimum energy configurations of the \({\hbox {Al}}_{\rm Ge}\), \({\hbox {I}}_{\rm Al}\) and \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) were obtained for ?2, ?1, 0, \(+\)1 and \(+\)2 charge states. The calculated formation energy shows that for the neutral charge state, the \({\hbox {I}}_{\rm Al}\) is energetically more favourable in the T than the H configuration. The \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) forms with formation energies of ?2.37 eV and ?2.32 eV, when the interstitial atom is at the T and H sites, respectively. The \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) is energetically more favourable when the interstitial atom is at the T site with a binding energy of 0.8 eV. The \({\hbox {I}}_{\rm Al}\) in the T configuration, induced a deep donor (\(+\)2/\(+1\)) level at \(E_{\mathrm {V}}+0.23\) eV and the \({\hbox {Al}}_{\rm Ge}\) induced a single acceptor level (0/?1) at \(E_{\mathrm {V}}+0.14\) eV in the band gap of Ge. The \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) induced double-donor levels are at \(E_{\rm V}+0.06\) and \(E_{\rm V}+0.12\) eV, when the interstitial atom is at the T and H sites, respectively. The \({\hbox {I}}_{\rm Al}\) and \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) exhibit properties of charge state-controlled metastability.     

New refractive index profiles of dispersion-flattened highly nonlinear fibers for future all-optical signal processing in wdm optical networks

In this paper, we demonstrate new dissimilar refractive index profiles for highly nonlinear ultra-flattened dispersion fibers with noteworthy effective area \((A_\mathrm{eff})\) for future optical signal processing. The newly proposed fibers named from Type 1 to Type 5 have a flattened dispersion over S, C, L and U bands. Predominantly, few-mode HNL-UFF fiber of Type 3 yields dispersion-flattened characteristics over a range of 250 nm of optical communication spectrum with a mere 0.2 ps/nm km variation in dispersion and a dispersion slope of \(0.0057\hbox { ps}/\hbox {nm}^{2}\) km due to the contribution of higher-order modes to the dispersion characteristics of the fiber. Moreover, it has a moderate nonlinear coefficient of \(8.03\hbox { W}^{-1}\,\hbox {km}^{-1}\). By modifying the refractive index profile of Type 3 fiber, Type 4 and Type 5 fibers are obtained in order to ensure single-mode operation, while the zero flattened dispersion characteristics of the fiber are compromised. Among the newly proposed fibers, Type 4 fiber offers a very low ITU-T cutoff wavelength of \(1.33~\upmu \hbox {m}\), whereas in the case of Type 5 fiber it is \(1.38~\upmu \hbox {m}\). Moreover, Type 4 and Type 5 fibers have good nonlinear coefficients of \(12.26\hbox { W}^{-1}\,\hbox {km}^{-1}\) and \(11.45\hbox { W}^{-1}\,\hbox {km}^{-1}\), respectively. By virtue of the proposed optimized index profile, an insensitive behavior toward bending is displayed by Type 3, Type 4 and Type 5 fibers. In addition, Type 4 fiber provides a better splice loss of 0.25 dB.     

A 3.1–10.6 GHz UWB LNA Based on Self Cascode Technique for Improved Bandwidth and High Gain

In this work, we present a self cascode based ultra-wide band (UWB) low noise amplifier (LNA) with improved bandwidth and gain for 3.1–10.6 GHz wireless applications. The self cascode (SC) or split-length compensation technique is employed to improve the bandwidth and gain of the proposed LNA. The improvement in the bandwidth of SC based structure is around 1.22 GHz as compared to simple one. The significant enhancement in the characteristics of the introduced circuit is found without extra passive components. The SC based CS–CG structure in the proposed LNA uses the same DC current for operating first stage transistors. In the designed UWB LNA, a common source (CS) stage is used in the second stage to enhance the overall gain in the high frequency regime. With a standard 90 nm CMOS technology, the presented UWB LNA results in a gain \(\hbox {S}_{21}\) of \(20.10 \pm 1.65\,\hbox {dB}\) across the 3.1–10.6 GHz frequency range, and dissipating 11.52 mW power from a 1 V supply voltage. However, input reflection, \(\hbox {S}_{11}\), lies below \(-\,10\) dB from 4.9–9.1 GHz frequency. Moreover, the output reflection (\(\hbox {S}_{22}\)) and reverse isolation (\(\hbox {S}_{12}\)), is below \(-\,10\) and \(-\,48\) dB, respectively for the ultra-wide band region. Apart from this, the minimum noise figure (\(\hbox {NF}_{min}\)) value of the proposed UWB LNA exists in the range of 2.1–3 dB for 3.1–10.6 GHz frequency range with a a small variation of \(\pm \,0.45\,\hbox {dB}\) in its \(\hbox {NF}_{min}\) characteristics. Linearity of the designed LNA is analysed in terms of third order input intercept point (IIP3) whose value is \(-\,4.22\) dBm, when a two tone signal is applied at 6 GHz with a spacing of 10 MHz. The other important benefits of the proposed circuit are its group-delay variation and gain variation of \(\pm \,115\,\hbox {ps}\) and \(\pm \,1.65\,\hbox {dB}\), respectively.     

High-Accuracy Time-Mode Duty-Cycle-Modulation-Based Temperature Sensor for Energy-Efficient System Applications

This paper presents a new time-mode duty-cycle-modulation-based high-accuracy temperature sensor. Different from the well-known \({\varSigma }{\varDelta }\) ADC-based readout structure, this temperature sensor utilizes a temperature-dependent oscillator to convert the temperature information into temperature-related time-mode parameter values. The useful output information of the oscillator is the duty cycle, not the absolute frequency. In this way, this time-mode duty-cycle-modulation-based temperature sensor has superior performance over the conventional inverter-chain-based time domain types. With a linear formula, the duty-cycle output streams can be converted into temperature values. The design is verified in 65nm standard digital CMOS process. The verification results show that the worst temperature inaccuracy is kept within 1\(\,^{\circ }\mathrm{C}\) with a one-point calibration from \(-\)55 to 125 \(^{\circ }\mathrm{C}\). At room temperature, the average current consumption is only 0.8 \(\upmu \)A (1.1\(\,\upmu \)A in one phase and 0.5 \(\upmu \)A in the other) with 1.2 V supply voltage, and the total energy consumption for a complete measurement is only 0.384 \({\hbox {nJ}}\).     

Capacity and Channel Coding for Wireless Point-to-Point <Emphasis Type="Italic">Z</Emphasis><Superscript>2</Superscript> Channel

In this paper, we derive the capacity of the asymmetric \({\text{Z}}^{2}\)-channel, which has been presented for the first time as an optimization problem. Similar to the Z-Channel, the proposed \({\text{Z}}^{2}\)-channel can be modelled as a practical interference wireless channel. In addition, the capacity behavior of \({\text{Z}}^{2}\)-channel is discussed and some examples and simulation results for the capacity is presented. Also a code plan has been applied for \({\text{Z}}^{2}\)-channel, based on repetition code to simulate its performance and compare it with the original Z-channel. In conclusion, simulation results show that the \({\text{Z}}^{2}\)-channel can be used widely for different operating points.     

Correction to: A subthreshold low-power CMOS LC-VCO with high immunity to PVT variations

This paper presents a capacitor-free low dropout (LDO) linear regulator based on a dual loop topology. The regulator utilizes two feedback loops to satisfy the challenges of hearing aid devices, which include fast transient performance and small voltage spikes under rapid load-current changes. The proposed design works without the need of a decoupling capacitor connected at the output and operates with a 0–100 pF capacitive load. The design has been taped out in a \(0.18\,\upmu \hbox {m}\) CMOS process. The proposed regulator has a low component count, area of \(0.012\, \hbox {mm}^2\) and is suitable for system-on-chip integration. It regulates the output voltage at 0.9 V from a 1.0–1.4 V supply. The measured results for a current step load from 250 to 500 \(\upmu \hbox {A}\) with a rise and fall time of \(1.5\,\upmu \hbox {s}\) are an overshoot of 26 mV and undershoot of 26 mV with a settling time of \(3.5\,\upmu \hbox {s}\) when \({C_L}\) between 0 and 100 pF. The proposed LDO regulator consumes a quiescent current of only \(10.5\,\upmu \hbox {A}\). The design is suitable for application with a current step edge time of 1 ns while maintaining \(\Delta V_{out}\) of 64 mV.     

Study on the Effect of Mn,Zn, and Sb on Undercooling Behavior of Sn-Ag-Cu Alloys Using Differential Thermal Analysis

Differential thermal analysis (DTA) has been conducted on directionally solidified near-eutectic Sn-3.0 wt.%Ag-0.5 wt.%Cu (SAC), SAC \(+\) 0.2 wt.%Sb, SAC \(+\) 0.2 wt.%Mn, and SAC \(+\) 0.2 wt.%Zn. Laser ablation inductively coupled plasma mass spectroscopy was used to study element partitioning behavior and estimate DTA sample compositions. Mn and Zn additives reduced the undercooling of SAC from 20.4\(^\circ \hbox {C}\) to \(4.9^\circ \hbox {C}\) and \(2^\circ \hbox {C}\), respectively. Measurements were performed at cooling rate of \(10^\circ \hbox {C}\) per minute. After introducing 200 ppm \(\hbox {O}_2\) into the DTA, this undercooling reduction ceased for SAC \(+\) Mn but persisted for SAC \(+\) Zn.     

A Low-Voltage Fully Differential Pure Current Mode Current Operational Amplifier

In this paper a novel high-frequency fully differential pure current mode current operational amplifier (COA) is proposed that is, to the authors’ knowledge, the first pure MOSFET Current Mode Logic (MCML) COA in the world, so far. Doing fully current mode signal processing and avoiding high impedance nodes in the signal path grant the proposed COA such outstanding properties as high current gain, broad bandwidth, and low voltage and low-power consumption. The principle operation of the block is discussed and its outstanding properties are verified by HSPICE simulations using TSMC \(0.18\,\upmu \hbox {m}\) CMOS technology parameters. Pre-layout and Post-layout both plus Monte Carlo simulations are performed under supply voltages of \(\pm 0.75\,\hbox {V}\) to investigate its robust performance at the presence of fabrication non-idealities. The pre-layout plus Monte Carlo results are as; 93 dB current gain, \(8.2\,\hbox {MHz}\,\, f_{-3\,\text {dB}}, 89^{\circ }\) phase margin, 137 dB CMRR, 13 \(\Omega \) input impedance, \(89\,\hbox {M}\Omega \) output impedance and 1.37 mW consumed power. Also post-layout plus Monte Carlo simulation results (that are generally believed to be as reliable and practical as are measuring ones) are extracted that favorably show(in abovementioned order of pre-layout) 88 dB current gain, \(6.9\,\hbox {MHz} f_{-3\text {db}} , 131^{\circ }\) phase margin and 96 dB CMRR, \(22\,\Omega \) input impedance, \(33\,\hbox {M}\Omega \) output impedance and only 1.43 mW consumed power. These results altogether prove both excellent quality and well resistance of the proposed COA against technology and fabrication non-idealities.     

Electrochemical,Structural and Magnetic Analysis of Electrodeposited CoCu/Cu Multilayers: Influence of Cu Layer Deposition Potential

The electrochemical, structural and magnetic properties of CoCu/Cu multilayers electrodeposited at different cathode potentials were investigated from a single bath. The Cu layer deposition potentials were selected as \(-\,0.3,\,\hbox {V}\) \(-\,0.4\,\,\hbox {V}\), and \(-\,0.5\,\hbox {V}\) with respect to saturated calomel electrode (SCE) while the Co layer deposition potential was constant at \(-\,1.5\,\hbox {V}\) versus SCE. For the electrochemical analysis, the current-time transients were obtained. The amount of noble non-magnetic (Cu) metal materials decreased with the increase of deposition potentials due to anomalous codeposition. Further, current-time transient curves for the Co layer deposition and capacitance were calculated. In the structural analysis, the multilayers were found to be polycrystalline with both Co and Cu layers adopting the face-centered cubic structure. The (111) peak shifts towards higher angle with the increase of the deposition potentials. Also, the lattice parameters of the multilayers decrease from 0.3669 nm to 0.3610 nm with the increase of the deposition potentials from \(-\,0.3\,\hbox {V}\) to \(-\,0.5\,\hbox {V}\), which corresponds to the bulk values of Cu and Co, respectively. The electrochemical and structural results demonstrate that the amount of Co atoms increased and the Cu atoms decreased in the layers with the increase of deposition potentials due to anomalous codeposition. For magnetic measurements, the saturation magnetizations, \(M_s\) obtained from the magnetic curves of the multilayers were obtained as 212 kA/m, 276 kA/m, and 366 kA/m with \(-\,0.3\,\hbox {V}\), \(-\,0.4\,\hbox {V}\), and \(-\,0.5\,\hbox {V}\) versus SCE, respectively. It is seen that the \(M_s\) values increased with the increase of the deposition potentials confirming the increase of the Co atoms and decrease of the Cu amount. The results of electrochemical and structural analysis show that the deposition potentials of non-magnetic layers plays important role on the amount of magnetic and non-magnetic materials in the layers and thus on the magnetic properties of the multilayers.     

An Accurate Performance Analysis for Regenerative Multi-hop Relaying in Wireless Networks Over Composite Multipath/Shadowed Fading

This paper presents and evaluates the performance of wireless networks that utilize the decode-and-forward relay. This multi-hop relaying scheme communicates over Extended Generalized-\({\mathcal {K}}\) (\(\hbox {EG}{\mathcal {K}}\)) composite fading channels to create performance evaluation. To this effect, new exact and easy to compute formulas for several performance metrics are derived. More specifically, new and exact-form mathematical formulas are derived for the cumulative distribution function, the generalized moments of the overall end-to-end signal-to-noise ratio, the outage probability (\({\hbox {P}}_{\text{out}}\)), the ergodic capacity (\({\mathcal {C}}_{\text{Ergodic}}\)), the moment generating function, and the average error probability (\({\hbox {Pr(e)}}\)) for different modulation schemes. Moreover, we carried out a series of computer simulation experiments in order to testify the accuracy of the derived framework. Finally, we discussed the impact of different parameters including fading/shadowing parameters, transmitted power and the number of hops on the derived expressions.     

Application of photonic crystal ring resonator nonlinear response for full-optical tunable add–drop filtering

In this paper, we investigate the application of Kerr-like nonlinear photonic crystal (PhC) ring resonator (PCRR) for realizing a tunable full-optical add–drop filter. We used silicon (Si) nano-crystal as the nonlinear material in pillar-based square lattice of a 2DPhC. The nonlinear section of PCRR is studied under three different scenarios: (1) first only the inner rods of PCRR are made of nonlinear materials, (2) only outer rods of PCRR have nonlinear response, and (3) both of inner and outer rods are made of nonlinear material. The simulation results indicate that optical power required to switch the state of PCRR from turn-on to turn-off, for the nonlinearity applied to inner PCRR, is at least \(2000\, \hbox {mW}{/}\upmu \hbox {m}^{2}\) and, for the nonlinearity applied to outer PCRR, is at least \(3000\, \hbox {mW}{/}\upmu \hbox {m}^{2}\) which corresponds to refractive index change of \(\Delta n_\mathrm{NL }= 0.085\) and \(\Delta n_\mathrm{NL }= 0.15\), respectively. For nonlinear tuning of add–drop filter, the minimum power required to 1 nm redshift the center operating wavelength \((\lambda _{0} = 1550\, \hbox {nm})\) for the inner PCRR scenario is \(125\, \hbox {mW}{/}\upmu \hbox {m}^{2}\) (refractive index change of \(\Delta n_\mathrm{NL}= 0.005)\). Maximum allowed refractive index change for inner and outer scenarios before switch goes to saturation is \(\Delta n_\mathrm{NL }= 0.04\) (maximum tune-ability 8 nm) and \(\Delta n_\mathrm{NL }= 0.012\) (maximum tune-ability of 24 nm), respectively. Performance of add–drop filter is replicated by means of finite-difference time-domain method, and simulations displayed an ultra-compact size device with ultra-fast tune-ability speed.     

An energy optimization in wireless sensor networks by using genetic algorithm

Wireless sensor networks (WSNs) are used for several commercial and military applications, by collecting, processing and distributing a wide range of data. Maximizing the battery life of WSNs is crucial in improving the performance of WSN. In the present study, different variations of genetic algorithm (GA) method have been implemented independently on energy models for data communication of WSNs with the objective to find out the optimal energy \(\hbox {(E)}\) consumption conditions. Each of the GA methods results in an optimal set of parameters for minimum energy consumption in WSN related to the type of selected energy model for data communication, while the best performance of the GA method [energy consumption \((\hbox {E}=3.49\times 10^{-4}\,\hbox {J})\)] is obtained in WSN for communication distance (d) \({\ge }87\,\hbox {m}\) in between the sensor cluster head and a base station.     

Electrical Transport Mechanisms and Photoconduction in Undoped Crystalline Flash-Evaporated Lead Iodide Thin Films

The flash-evaporation technique was utilized to fabricate undoped 1.35-μm and 1.2-μm thick lead iodide films at substrate temperatures \( T_{\rm{s}} = 150 \)°C and 200°C, respectively. The films were deposited onto a coplanar comb-like copper (Cu-) electrode pattern, previously coated on glass substrates to form lateral metal–semiconductor–metal (MSM-) structures. The as-measured constant-temperature direct-current (dc)-voltage (\( I\left( {V;T} \right) - V \)) curves of the obtained lateral coplanar Cu-PbI₂-Cu samples (film plus electrode) displayed remarkable ohmic behavior at all temperatures (\( T = 18 - 90\,^\circ {\hbox{C}} \)). Their dc electrical resistance \( R_{\rm{dc}} (T \)) revealed a single thermally-activated conduction mechanism over the temperature range with activation energy \( E_{\rm{act}} \approx 0.90 - 0.98 \,{\hbox{eV}} \), slightly less than half of room-temperature bandgap energy \( E_{\rm{g}} \) (\( \approx \,2.3\, {\hbox{eV}} \)) of undoped 2H-polytype PbI₂ single crystals. The undoped flash-evaporated \( {\hbox{PbI}}_{\rm{x}} \) thin films were homogeneous and almost stoichiometric (\( x \approx 1.87 \)), in contrast to findings on lead iodide films prepared by other methods, and were highly crystalline hexagonal 2H-polytypic structure with c-axis perpendicular to the surface of substrates maintained at \( T_{\rm{s}} { \gtrsim }150^\circ {\hbox{C}} \). Photoconductivity measurements made on these lateral Cu-PbI₂-Cu-structures under on–off visible-light illumination reveal a feeble photoresponse for long wavelengths (\( \lambda > 570\,{\hbox{nm}} \)), but a strong response to blue light of photon energy \( E_{\rm{ph}} \) \( \approx \,2.73 \, {\hbox{eV}} \) (\( > E_{\rm{g}} \)), due to photogenerated electron–hole (e–h) pairs via direct band-to-band electronic transitions. The constant-temperature/dc voltage current–time \( I\left( {T,V} \right) - t \) curves of the studied lateral PbI₂ MSM-structures at low ambient temperatures (\( T < 50^\circ {\hbox{C}} \)), after cutting off the blue-light illumination, exhibit two trapping mechanisms with different relaxation times. These strongly depend on \( V \) and \( T \), with thermally generated charge carriers in the PbI₂ mask photogenerated (e–h) pairs at higher temperatures.     

High sensitive photonic crystal ring resonator structure applicable for optical integrated circuits

Quality factor and refractive sensitivity are significant parameters in designing optical devices such as filters, demultiplexers, switches and sensors. In this paper, we proposed a novel structure for photonic crystal ring resonator with octagon-shaped core. The transmission efficiency of the proposed ring resonator at \(\lambda =1551\,\hbox {nm}\) is about 99.6 % with bandwidth and quality factor values equal to 0.3 nm and 5170. The proposed structure is very sensitive upon the variation of refractive index of total structure and core part of the resonator, such that the refractive index sensitivity to the refractive index of total structure and the resonant ring core is \(\Delta \lambda /\Delta \lambda =3.1\,\hbox {nm}\,/\,0.01\) and \(\Delta \lambda /\Delta \hbox {n}=2.9\,\hbox {nm}\,/\,0.01\), respectively.     

Dependence of thermal sensitivity of LPFG on waveguide and material parameters

This article demonstrates the effect of waveguide and material parameters on thermal sensitivity trends adopted by different cladding modes based on long-period fiber grating. Three-layer fiber geometry-based mathematical model has been implemented to estimate cladding modes. It is observed that for a cladding mode, the sign and magnitude of thermal sensitivity slope depend upon the designed grating period closer to period at dispersion turn around point. The \(\hbox {LP}_{10}\) and \(\hbox {LP}_{11}\) cladding modes have shown blueshift and maximum thermal sensitivity above all other modes at designed grating periods of 225 and \(195\,\upmu \hbox {m}\), respectively. The material parameter of fiber (thermo-optic coefficient) has also resulted in increment in sensitivity with the increase in difference amid its values for core and cladding region.     

A 0.36 μW/channel recorder for external ambulatory ECG recorders

There is an increasing demand for long-term ECG monitoring applications which are very low power, small size and capable of wireless data transmission. This paper presents an analog front-end and also modulator for long-term ECG recording purpose. The fully integrated system features three independent channels and a modulator. The analog front-end includes a voltage-to-time conversion and a tunable modulator to achieve a very low power consumption for wireless transmission of the data without analog to digital converter. The proposed system is designed and simulated in a \(0.18\,\upmu \hbox {m}\) CMOS technology and occupies only \(0.245\,\mathrm{mm}^{2}\). It can record ECG signal with 9.2-bit resolution while consuming only \(0.36\,\upmu {\mathrm{W}}\) per channel from a 0.9 V supply. Also, it can transmit data consuming just \(0.72\,{\upmu }\mathrm{W}\) per channel from a 0.9 V supply. The input referred noise of the readout channel is \(2.01\,\upmu {\mathrm{V}}_{{{\rm rms}}}\).     

A Reduced-sp-$$\hbox {D3L}_{\mathrm{sum}}$$ Adder-Based High Frequency $$4\times 4$$4×4 Bit Multiplier Using Dadda Algorithm

A low-power, high-speed \(4\times 4\) multiplier using Dadda algorithm is proposed. The full adder blocks used in this multiplier have been designed using reduced-split precharge-data driven dynamic sum logic. Flip flops used in the pipeline registers have been designed to increase input signal noise margin, resulting in the minimization of output signal glitches. The multiplier circuit is implemented in 1P-9M Low-K UMC 90nm CMOS process technology. Post-layout simulations are carried out using Cadence Virtuoso. The proposed multiplier operates at a clock frequency of 3.5 GHz, with an average dynamic power consumption of 1.096 mW at a temperature of \(27\,^{\circ }\hbox {C}\) and 1 V supply voltage and occupies a chip area of \(76\,\upmu \hbox {m}\times 102\,\upmu \hbox {m}\).     

A low-power high-performance digital predistorter for wideband power amplifiers

In this paper, we present a low-power high-performance digital predistorter (DPD) for the linearization of wideband RF power amplifiers (PAs). It is based on the novel FIR memory polynomial (FIR-MP) predistorter model, which significantly augments the performance of the conventional memory polynomial predistorter with the use of complex baseband digital FIR filter prior to the memory polynomial. The adjacent channel leakage ratio (ACLR) performance comparison between the conventional MP and the proposed FIR-MP is done based on simulations with multi-carrier modulated signals of 20 and 80 MHz bandwidths. The PA models used for the simulations are extracted from the measurements of a commercial \(1\,\hbox {W}\) GaAs HBT PA. At the ideal system-level simulations, the improvements in ACLR over the conventional MP are 7.2  and 15.6 dB, respectively, for 20 and 80 MHz signals. The choice of selection of various parameters of the predistorter along with the subsequent digital-to-analog converter (DAC) is presented. The impact of fixed-point representation is assessed using ACLR metrics, which shows that a wordlength of 14 bits is sufficient to obtain ACLR beyond \(45\,\hbox {dBc}\) with a margin of \(10\,\hbox {dB}\). The proposed predistorter is synthesized in \(28\,\hbox {nm}\) fully-depleted silicon-on-insulator (FDSOI) CMOS process. It is shown that with a fraction of the power and die area of that of the MP a huge improvement in ACLR is attained. With an overall power consumption of 8.2 and 88.8 mW, respectively, for 20 and 80 MHz signals, the FIR-MP DPD proves to be a suitable candidate for small-cell base station PA linearization.     

Ultra-Fast Current Mode Sense Amplifier for Small $$I_{\mathrm{CELL}}$$ SRAM in FinFET with Improved Offset Tolerance

In this paper, a novel, high-performance and robust sense amplifier (SA) design is presented for small \(I_\mathrm{CELLl}\) SRAM, using fin-shaped field effect transistors (FinFET) in 22-nm technology. The technique offers data-line-isolated current sensing approach. Compared with the conventional CSA (CCSA) and hybrid SA (HSA), the proposed current feed-SA (CF-SA) demonstrates 2.15\(\times \) and 3.02\(\times \) higher differential current, respectively, for \({V}_{\mathrm{DD}}\) of 0.6 V. Our results indicate that even at the worst corner, CF-SA can provide 2.23\(\times \) and 1.7\(\times \) higher data-line differential voltage compared with CCSA and HSA, respectively. Further, 66.89 and 31.47 % reductions in the cell access time are achieved compared to the CCSA and HSA, respectively, under similar \(I_\mathrm{CELLl}\) and bit-line and data-line capacitance. Statistical simulations have proved that the CF-SA provides high read yield with 32.39 and 22.24 % less \(\upsigma _{\mathrm{Delay}}\). It also offers a much better read effectiveness and robustness against the data-line capacitance as well as \({V}_{\mathrm{DD}}\) variation. Furthermore, the CF-SA is able to tolerate a large offset of the input devices, up to 80 mV at \({V}_{\mathrm{DD}}=0.6\hbox {V}\).