共查询到20条相似文献,搜索用时 15 毫秒
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Fushan Li Yongzhi ZhangChaoxing Wu Zhixiao LinBeibei Zhang Tailiang Guo 《Vacuum》2012,86(12):1895-1897
Multilayer transparent electrode based on Al-doped zinc oxide (AZO)/Ag/Al-doped zinc oxide (AZO) was fabricated by sputtering, and a green organic light-emitting diode (OLED) device utilizing AZO/Ag/AZO as anode was fabricated. The AZO/Ag/AZO multilayer film exhibited superior square resistance and optical transmittance to those of commercial indium tin oxide (ITO). In comparison with the green OLEDs based on ITO and pure AZO anode, the green OLED based on AZO/Ag/AZO showed the highest light-emitting efficiency. The results indicate that AZO/Ag/AZO multilayer electrodes are a promising low-cost, low-toxic and low-temperature processing electrode scheme for OLED application. 相似文献
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Yen-Sheng Lin Yung-Hao Huang 《Journal of Materials Science: Materials in Electronics》2013,24(8):3058-3062
In this study, growth nano-layer metals (Al, Cu, Ag) and Al-doped ZnO (AZO) thin films are deposited on glass substrates as the transparent conducting oxides (TCOs) to form AZO/nano-layer metals/AZO sandwich structures. The conductivity properties of thin films are enhanced when the average transmittance over the wavelengths 400–800 nm is maintained at higher than 80 %. A radio frequency magnetron sputtering system is used to deposit the metal layers and AZO thin films of different thickness, to form AZO/Al/AZO (ALA), AZO/Cu/AZO (ACA) and AZO/Ag/AZO (AGA) structures. X-ray diffraction and field emission scanning electron microscopy are used to analyze the crystal orientation and structural characteristic. The optical transmission and resistivity are measured by UV–VIS–NIR spectroscopy and Hall effect measurement system, respectively. The results show that when the Ag thickness is maintained at approximately 9 nm, the TCOs thin film has the lowest resistivity of 8.9 × 10?5 Ω-cm and the highest average transmittance of 81 % over the wavelengths 400–800 nm. The crystalline Ag nano-crystal structures are observed by high-resolution transmission electron microscopy. In addition, the best figure of merit for the AZO/Ag/AZO tri-layer film is 2.7 × 10?2 (Ω?1), which is much larger than that for other structures. 相似文献
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Dagang Miao Shouxiang Jiang Songmin Shang Hongmei Zhao Zhuoming Chen 《Journal of Materials Science: Materials in Electronics》2014,25(12):5248-5254
AZO/Cu/AZO multilayer films were prepared on glass substrate by radio frequency magnetron sputtering technology. The prepared films were investigated by a four-point probe system, X-ray diffraction, optical transmittance spectra, scanning electron microscope, atomic force microscopy and Fourier transform infrared spectroscopy. The results showed that Cu inner layer started forming a continuous film at the thickness around 11 nm. The prepared AZO/Cu/AZO samples exhibited the visible transmittance of 60–80 % and sample with 15 nm Cu inner layer showed the highest infrared reflection rate of 67 % in FIR region and the lowest sheet resistance of 16.6 Ω/sq. The proper visible transmittance and infrared reflection property of the AZO/Cu/AZO multilayer film make it a promising candidate for future energy conservation materials. 相似文献
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磁控溅射制备AZO/Ag/AZO透明导电膜的性能研究 总被引:1,自引:0,他引:1
选择ZnO2与Al2O3质量比为97:3的靶材为溅射源,用射频磁控溅射法室温下在玻璃基底上沉积AZO/Ag/AZO薄膜,讨论了氧流量变化对薄膜透光率、方阻及表面形貌的影响并深入分析了机理。研究结果表明,氧流量变化会导致薄膜沉积厚度的变化,氧流量为4时薄膜沉积速率最快。沉积AZO时充入氧气会使整个膜系的透光率不随Ag层增厚明显降低,并且会使膜系的方阻降低。在最优氧流量为4L/min(标准状态下,下同)上下各沉积59nm的AZO与氧流量为0时沉积33nm银层相匹配的复合膜在可见光区(包括基底)的透光率达到90%,方阻为2.5Ω/□。 相似文献
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Qian Jiang Weiyan Wang Yuheng Zeng Wei Xu Jinhua Huang Ti Zhou Weijie Song 《Journal of Materials Science: Materials in Electronics》2014,25(12):5356-5361
In this work, aluminum-doped zinc oxide (AZO)/p-Si heterojunction solar cells were prepared by sputtering of ~120 nm AZO thin films in Ar or Ar–H2 atmosphere on textured p-Si wafers, and the effects of hydrogen incorporation on the solar cell performance were investigated. Results showed that the performance of AZO/p-Si heterojunction solar cells was improved with the increase of hydrogen volume concentration from 0 to 23 %. The AZO:H/p-Si heterojunction solar cells prepared in Ar–23 % H2 exhibited a short-circuit current density of 29 mA/cm2 and a conversion efficiency of 2.84 %. The reflectance measurement indicated that the reflectance of p-Si surface in the range of 400–1,100 nm decreased from 13 to 4 % after AZO:H films coating; and the capacitance–voltage measurement indicated that the density of defect states at AZO/p-Si interface was decreased after hydrogen incorporation. Passivation and antireflection functions can be realized in AZO:H films deposited in Ar–H2, which opens a novel route to prepare cost-effective AZO/p-Si heterojunction solar cells. 相似文献
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Effect of Cu layer thickness on the structural, optical and electrical properties of AZO/Cu/AZO tri-layer films 总被引:1,自引:0,他引:1
Highly conducting AZO/Cu/AZO tri-layer films were successfully deposited on glass substrates by RF magnetron sputtering of Al-doped ZnO (AZO) and ion-beam sputtering of Cu at room temperature. The microstructures of the AZO/Cu/AZO multilayer films were studied using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and atomic force microscope (AFM). X-Ray diffraction measurements indicate that the AZO layers in the tri-layer films are polycrystalline with the ZnO hexagonal structure and have a preferred orientation with the c-axis perpendicular to the substrates. With the increase of Cu thickness, the crystallinity of AZO and Cu layers is simultaneously improved. When the Cu thickness increases from 3 to 13 nm, the resistivity decreases initially and then varies little, and the average transmittance shows a first increase and then decreases. The maximum figure of merit achieved is 1.94 × 10−2 Ω−1 for a Cu thickness of 8 nm with a resistivity of 7.92 × 10−5 Ω cm and an average transmittance of 84%. 相似文献
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Highly conducting tri-layer films consisting of a Cu layer sandwiched between Al-doped ZnO (AZO) layers (AZO/Cu/AZO) were prepared on glass substrates at room temperature by radio frequency (RF) magnetron sputtering of AZO and ion-beam sputtering of Cu. The tri-layer films have superior photoelectric properties compared with the bi-layer films (Cu/AZO, AZO/Cu) and single AZO films. The effect of AZO thickness on the properties of the tri-layer films was discussed. The X-ray diffraction spectra show that all films are polycrystalline consisting of a Cu layer with the cubic structure and two AZO layers with the ZnO hexagonal structure having a preferred orientation of (0 0 2) along the c-axis, and the crystallite size and the surface roughness increase simultaneously with the increase of AZO thickness. When the AZO thickness increases from 20 to 100 nm, the average transmittance increases initially and then decreases. When the fixed Cu thickness is 8 nm and the optimum AZO thickness of 40 nm was found, a resistivity of 7.92 × 10−5 Ω cm and an average transmittance of 84% in the wavelength range of visible spectrum of tri-layer films have been obtained. The merit figure (FTC) for revaluing transparent electrodes can reach to 1.94 × 10−2 Ω−1. 相似文献
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Leonardo C. Gontijo Alfredo G. Cunha Pedro A.P. Nascente 《Materials Science and Engineering: B》2012,177(20):1783-1787
Transparent conductive oxides (TCO) are indispensable as front electrode for most of thin film electronic devices such as transparent electrodes for flat panel displays, photovoltaic cells, windshield defrosters, transparent thin film transistors, and low emissivity windows. Thin films of aluminum-doped zinc oxide (AZO) have shown to be one of the most promising TCOs. In this study, three layered Al-doped ZnO (AZO)/ZnMgO/AZO heterostructures were prepared by filtered cathodic arc deposition (FCAD) on glass substrates. The objective is to find a set of parameters that will allow for improved optical and electrical properties of the films such as low resistivity, high mobility, high number of charge carriers, and high transmittance. We have investigated the effect of modifications in thickness and doping of the ZnMgO inner layer on the structural, electrical, and optical characteristics of the stacked heterostructures. 相似文献
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An Al-doped ZnO (AZO) seed layer is prepared on the back side of a porous alumina membrane (PAM) substrate by spin coating followed by annealing in a vacuum at 400 °C. Zinc oxide in ordered arrays mediated by a high aspect ratio and an ordered pore array of AZO/PAM is synthesized. The ZnO nanowire array is prepared via a 3-electrode electrochemical deposition process using ZnSO4 and H2O2 solutions at a potential of − 1 V (versus saturated calomel electrode) and temperatures of 65 and 80 °C. The microstructure and chemical composition of the AZO seed layer and ZnO/AZO/PAM nanowire arrays are characterized by field emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). Results indicate that the ZnO/AZO/PAM nanowire arrays were assembled in the nanochannel of the porous alumina template with diameters of 110–140 nm. The crystallinity of the ZnO nanowires depends on the AZO seed layer during the annealing process. The nucleation and growth process of ZnO/AZO/PAM nanowires are interpreted by the seed-layer-assisted growth mechanism. 相似文献
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采用直流磁控溅射方法在玻璃衬底上室温生长了AZO/Cu双层薄膜,Cu层厚度控制在9nm,研究了AZO层厚度对薄膜电学和光学性能的影响。当AZO层厚度为20~80nm时,AZO/Cu双层薄膜具有良好的综合光电性能,方块电阻为12~14Ω/sq,可见光平均透过率为70~75%,品质因子为2×10-3~5×10-3Ω-1。AZO/Cu双层薄膜可以观察到Cu(111)和ZnO(002)的XRD衍射峰。通过退火研究表明,AZO/Cu双层薄膜的光电性能可在400℃下保持稳定,具有良好的热稳定性。本研究制备的透明导电AZO/Cu双层薄膜具有室温制程、综合光电性能良好、结晶性能较好、稳定性高的优点,可以广泛应用于光电器件透明电极及镀膜玻璃等领域。 相似文献
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酞菁氧钛/氯丹蓝偶氮单层复合光导体的制备与光导性能 总被引:1,自引:0,他引:1
本论文报道了酞菁氧钛 氯丹蓝偶氮单层复合光导体的制备方法 ,探讨了溶剂、光生材料与传输材料的配比等条件对光导性能的影响。光导性能测试结果表明 ,复合单层光导体比单一材料的单层光导体光导性能有明显提高 ,在可见光区和近红外区都表现出很高的光敏性 ,具有光导性能互补效应 相似文献
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Hong-Bo Wang Fei Ma Qian-Qian Li Miao Wang Jia-Bin Liu Meng-Long Sun Da-Yan Ma Hong-Tao Wang Ke-Wei Xu 《Journal of Materials Science》2014,49(17):6020-6028
Misfit strain relaxation-induced morphology instability is usually observed in epitaxial heterostructures at high temperatures. In this paper, we report that this morphology instability can occur even at room temperature in epitaxial ZnO/AZO (Al-doped ZnO) core–shell nanowires (NWs). As a result, densely distributed ZnO nanodots (NDs) were self-assembled on the NWs. The growth of NDs was slowed down during aging owing to the gradually reduced misfit strain. The final size and shape of the NDs were highly depended on the shell thickness and the doping ratio. It was proved that the morphology stability could be improved by surface passivation, thinning the shell thickness, or lowering the doping ratio. The results may provide instructive suggestions for the reliable design in strain and surface engineering of nanomaterials. 相似文献
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真空退火法对AZO薄膜的研究 总被引:1,自引:0,他引:1
磁控溅射法在玻璃衬底上制备了AZO(氧化锌掺铝)薄膜。对薄膜进行了真空退火。利用XRD、分光光度计以及四探针等测试装置,对AZO薄膜的晶粒度、透光率和导电性能进行了测试分析。结果表明,退火有利于薄膜结晶;退火有利于薄膜光电性能的提高。在本实验中,AZO薄膜的最高透光率可达90.617%;最低电阻率可达2.21×10-3(Ω.cm)。对比在真空中退火的ITO薄膜的光电性能参数,结果已有所超越。此结果说明,AZO薄膜有潜力成为透明导电膜ITO的替代产品。 相似文献