开管扩镓改善器件电参数性能的机理分析

叙述了SiO2/Si系开管扩镓工艺和镓掺杂原理,研究了镓掺杂与器件电参数的关系,并分析了改善器件性能的机理.实验证明,采用SiO2/Si系开管扩镓工艺,扩镓硅片表面状况、均匀性和重复性良好,镓杂质浓度分布理想,并能明显改善器件电参数性能,提高电参数一致性,增加成品率等,优于闭管扩镓、裸Si系开管扩镓和硼扩散.     

半导体技术

TN301 2003010668开管扩神改善器件电参数性能的机理分析/孙瑛(山东师范大学)11半导体学报一2 002,23(7)一746一751叙述了5102/Si系开管扩嫁工艺和稼掺杂原理研究了稼掺杂与器件电参数的关系,并分析了改善器件性能的机理.实验证明,采用51 02/Si系开管扩稼工艺,扩稼硅片表面状况、均匀性和重复性良好,稼杂质浓度分布理想,并能明显改善器件电参数性能,提高电参数一致性,增加成品率等,优于闭管扩嫁、裸Si系开管扩稼和硼扩散.图4参5‘木)显减弱.测试温度的变化对Si纳米量子点光致发光特性的影响,则源自于光生载流子通过5102/Si纳米量子点界面…     

SiO2／Si系开管扩镓工艺对器件性能的改善

本文采用SiO2/Si系开管扩镓工艺，消除了合金点和腐蚀抗，扩散均匀性，重复性和一致性较好，该工艺用于生产高反压晶体管和晶闸管，能显著的改善器件性能，扩散质量和电气性能均优于现行的硼铝涂层及闭管镓（或铝镓）扩散工艺，根据在裸系Si和SiO2/Si系中镓的扩散行为，对镓扩散质量进行了分析。     

镓杂质RS效应的研究与分析

在确定的开管扩镓装置中,以氢气作为镓源Ga2O3的反应和输运气体,凭借准确地控制扩散条件,控制Ga在SiO2/Si系统中扩散,可获得良好的杂质RS效应.根据Ga在Si和SiO2中的扩散行为,研究和分析了镓在裸Si系和SiO2/Si系扩散所产生的杂质RS效应机理,及其热氧化、氧化膜质量和厚度对RS的影响.     

p型扩散区(SiO2/Si系扩Ga)的俄歇分析

采用Ga在SiO2/Si系扩散途径,对扩Ga硅片进行了俄歇分析,在p型区未发现重金属杂质,表明热氧化SiO2层对外来重金属有良好的屏蔽作用,而且有利于提高硅器件的电参数性能、稳定性和可靠性.     

p型扩散区(SiO2/Si系扩Ga)的俄歇分析

采用Ga在SiO2/Si系扩散途径,对扩Ga硅片进行了俄歇分析,在p型区未发现重金属杂质,表明热氧化SiO2层对外来重金属有良好的屏蔽作用,而且有利于提高硅器件的电参数性能、稳定性和可靠性.     

镓杂质R_S效应的研究与分析

在确定的开管扩镓装置中,以氢气作为镓源Ga2 O3的反应和输运气体,凭借准确地控制扩散条件,控制Ga在Si O2 / Si系统中扩散,可获得良好的杂质RS效应.根据Ga在Si和Si O2 中的扩散行为,研究和分析了镓在裸Si系和Si O2 / Si系扩散所产生的杂质RS效应机理,及其热氧化、氧化膜质量和厚度对RS的影响     

一种气(Ga)-固(Al掺杂氧化物)-固(Si)掺杂新工艺

针对制造高压晶闸管p型杂质扩散工艺的不足,进行了开管式受主双质掺杂技术的研究.通过大量试验和工艺论证,研制成一种气(Ga) -固(Al掺杂氧化物) -固(Si)掺杂新工艺.经应用证明,该掺杂技术能明显提高器件的电参数一致性、综合性能和成品率,为电力半导体器件研究和生产开辟了一条可行的受主双质掺杂新工艺     

一种气(Ga)-固(Al掺杂氧化物)-固(Si)掺杂新工艺

针对制造高压晶闸管p型杂质扩散工艺的不足,进行了开管式受主双质掺杂技术的研究.通过大量试验和工艺论证,研制成一种气(Ga)-固(Al掺杂氧化物)-固(Si)掺杂新工艺.经应用证明,该掺杂技术能明显提高器件的电参数一致性、综合性能和成品率,为电力半导体器件研究和生产开辟了一条可行的受主双质掺杂新工艺.     

高压大电流晶闸管受主双质掺杂新技术的研究

针对现行Ｐ型杂质扩散工艺的不足，开展了受主双质掺杂新技术的研究．经对比实验和工艺论证，首先研究成功开管铝镓一步扩散法．应用证明，该项技术用于制造高压大电流晶闸管是可行的，产品电参数一致性和综合性能好，合格率高，为电力半导体器件研究和生产开创了一条先进的工艺途径．     

Ga阶梯分布改善快速晶闸管耐压特性

利用开管扩Ｇａ系统，分段控制掺杂量，使杂质Ｇａ在硅中形成阶梯形分布，用于快速晶曾管的研制，理论分析与测试结果表明，器件阻断耐压值比原高分布提高２００Ｖ左右，且通态特性和动态特性保持优良。实验证明，Ｇａ的阶梯分布是的晶闸管后条新途径。     

Open tube diffusion of zinc in gallium arsenide

The diffusion of zinc in gallium arsenide has been performed under open tube conditions utilizing a zinc oxide layer as the diffusion source, silicon dioxide as an intermediate layer between the zinc oxide and the gallium arsenide, and phosphosilicate glass as a cap. The thickness of the silicon dioxide layer was used to control the amount of zinc diffused in the gallium arsenide. We have obtained a diffusion system which protects the gallium arsenide surface during the thermal cycle in a nitrogen/hydrogen flowing gas ambient. The results demonstrate the capability of reproducibly forming heavily doped p-type regions whose penetration depths were controlled from 1 to 25 µm for one to five hour-diffusions at 800°C.     

一种开管铝镓扩散工艺的研究

就现行P型杂质扩散工艺的不足，进行了开旮铝镓掺杂技术的研究。经过大量实验和工艺论证，该研究取得成功，具有先进性和实用性，可明显地提高器件电参数一致性、综合性能和成品率，为电力半导体器件研究和生产开辟了一条可行的受主掺杂工艺。     

大功率VDMOS（200V）的设计研究

介绍了大功率VDMOS（200V）的设计方法。对设计参数进行了理论分析,并使用仿真工具对设计参数进行了验证和优化。设计中主要考虑了漏源电压和导通电阻等参数指标,通过器件和工艺的仿真,确定了该器件合理的参数范围：外延厚度为20μm,外延电阻率为5Ω·cm栅氧厚度为52nm;P阱注入剂量为3×3^12cm^2,推阱时间65min。将流片结果与仿真结果进行了比较。     

通信系统优化对分布式机器学习系统性能提升的分析

随着人工智能技术的迅猛发展,分布式机器学习系统的应用不断加速,对该系统性能提升的研究愈发紧迫。聚焦用于分布式机器学习的通信系统对整体系统性能提升的重大影响,从机器学习计算的独特性及分布式系统性能现有分析理论的局限性入手,对理论和工程实现两个维度深度分析了通信系统优化对于分布式机器学习系统实现线性乃至超线性加速的可行性,提出了影响分布式机器学习系统性能提升最为关键的三个通信系统优化核心要素,并对机器学习分布式系统中的通信优化理论及未来实践方向作出了展望。     

Design and experiment of a laser ionization source for ion mobility spectrometer

Ion mobility spectrometry (I MS) is based upon theseparation of gas phaseionsthroughsize-to-charge rath-er than mass-to-chargeratios[1].Morerecentlythe appli-cationsinindustry and environment have increased,notonly because of the si mplicity of theinstrum…     

Experiments on hot electron noise in semiconductor materials forhigh-speed devices

Experimental results on noise temperature and spectral density of current fluctuations (electron diffusion) at high electric fields in silicon, gallium arsenide, and indium phosphide are presented. The dominant noise sources are discussed in their relation to electron scattering mechanisms. Physical backgrounds of high speed-low noise performance (noise-speed tradeoff) are considered. Suppression in short samples of the fluctuations having long correlation time constant and (or) high threshold energy is discussed     

工艺路线对TFT工厂能源消耗的影响

为了在TFT工厂的设计、建设及运营阶段采取有针对性的节能降耗措施,有效降低器件制备过程中的能耗,本文根据我院多年从事TFT生产线节能评估工作的经验数据,针对不同技术路线,选取具有代表性的TFT-LCD及AMOLED生产线,并对其能耗进行对比分析,以讨论不同技术路线对TFT-LCD及AMOLED显示器件生产能耗的影响。分析结果表明:阵列制备是最主要用能工序,其制备复杂程度可采用光罩次数(Mask)表征。随着光罩次数的增加,器件制造对电力、氮气、新鲜水等能源及耗能工质的需求呈急剧增长:采用10-13Mask技术的LTPS及AMOLED显示器件,其综合能耗达到a-Si及Oxide技术路线的约350%之多;在不同技术路线下,电力均为最主要的用能需求,其消耗量占总能耗的80%~87%。能耗的增加导致用能成本的大幅上升。在国家大力提倡绿色经济的环境下,建议各大厂商采取科学有效的能耗管控措施,以降低能源消耗及用能成本,实现产业的健康可持续发展。     

Infrared photoconductivity via deep copper acceptors insilicon-doped, copper-compensated gallium arsenide photoconductiveswitches

Silicon-doped, copper-compensated, semi-insulated gallium arsenide of various doping parameters was studied with respect to infrared photoconductivity. This material is used as a photoconductive switch, the bistable optically controlled semiconductor switch (BOSS). One limitation was the relatively low conductivity of the device during the on-state. Typically, silicon-doped gallium arsenide is converted to semi-insulating gallium arsenide by the thermal diffusion of copper into the GaAs:Si. It is shown that variation of the diffusion parameters can improve the on-state conductivity by the enhancement of the concentration of a copper center known as Cu_B. The conductivity of the device 150 ns after irradiation from a 20-ns FWHM laser pulse (λ=1.1 μm) is recorded for various incident energies. This on-state conductivity saturates at a value that is predicted by the densities of the copper levels and the mobility     

A novel partial-SOI LDMOSFET (>800 V) with n-type floating buried layer in substrate

In this paper, a novel high voltage lateral double diffused metal–oxide–semiconductor (LDMOS) field effect transistor based on partial silicon-on-insulator (PSOI) technology is proposed and investigated based on the numerical simulations. The structure is characterized by an n-type floating buried layer (NFBL) in the substrate under the silicon window near the drain. The buried layer in the substrate modulates the lateral and vertical electric field, which results in the electric field of the drift region distributed uniformly. Therefore, the breakdown voltage (BV) of the device is significantly improved. The influences of the key parameters on device performance of the proposed structure are discussed. Moreover, the self-heating effect (SHE) is greatly alleviated duo to the silicon window helps thermal conduction to the substrate, which improved the reliability of device application.