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基于液晶开放表面的微流体操纵技术是一种利用微流体学原理和微加工技术,在微纳尺度上对液体进行操纵和控制的方法,对新型微流控平台的开发至关重要。本文通过注液光滑表面的理论设计,利用液晶聚合物薄膜的可控制备,开发了取向序各向异性的功能聚合物薄膜,包括向列相聚合膜和近晶相聚合膜。研究表明,与近晶相聚合膜相比,向列相聚合膜在同等条件下,为水滴提供更快的输运速度,比近晶相聚合膜约快1个数量级。近晶相聚合膜和向列相聚合膜对于水滴的输运均具有方向选择性,实现了液滴在液晶功能表面的各向异性输运,为开发基于图案化液晶功能表面的特异性微流控技术奠定了基础。 相似文献
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用卤素钨灯作辐射热源快速热氮化(RTN)10nmSiO2膜,制备了<100>和<111>晶向Si衬底上的Si-SiOxNy-Al电容结构,研究了电子从<100>和<111>不同晶向N型硅积累层到RTN后SiO2膜(或原始SiO2膜)的漏电流和高场F-N隧穿电流。研究结果表明:经RTN SiO2膜化原始SiO2膜从低场到隧穿电场范围都明显地看到电导增强现象,比较RTN后两种不同晶向样品,低场漏电流没有多大的差别而在高场从<100>晶向比从<111>晶向Si隧穿SiOxNy膜的F-N电流却明显增加,借用一种基于横向晶格动量守恒的理论模型解释了这种现象。 相似文献
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用卤素钨灯作辐射热源快速热氮化(RTN)10 nm SiO2膜,制备了<100>和<111>晶向Si衬底上的Si-SiOxNy-Al电容结构.研究了电子从〈100〉和〈111>不同晶向N型硅积累层到RTN后SiO2膜(或原始SiO2膜)的漏电流和高场F-N隧穿电流.研究结果表明:经RTN SiO2膜比原始SiO2膜从低场到隧穿电场范围都明显地看到电导增强现象.比较RTN后两种不同晶向样品,低场漏电流没有多大的差别而在高场从<100>晶向比从<111>晶向Si隧穿SiOxNy膜的F-N电流却明显增加,借用一种基于横向晶格动量守恒的理论模型解释了这种现象. 相似文献
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用卤素钨灯作辐射热源快速热氮化 (RTN) 10 nm Si O2 膜 ,制备了〈10 0〉和〈111〉晶向 Si衬底上的 Si- Si Ox Ny-Al电容结构 .研究了电子从〈10 0〉和〈111〉不同晶向 N型硅积累层到 RTN后 Si O2 膜 (或原始 Si O2 膜 )的漏电流和高场 F- N隧穿电流 .研究结果表明 :经 RTN Si O2 膜比原始 Si O2 膜从低场到隧穿电场范围都明显地看到电导增强现象 .比较 RTN后两种不同晶向样品 ,低场漏电流没有多大的差别而在高场从〈10 0〉晶向比从〈111〉晶向 Si隧穿Si Ox Ny 膜的 F- N电流却明显增加 ,借用一种基于横向晶格动量守恒的理论模型解释了这种现象 相似文献
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从场致晶化和热致晶化的角度对固体电介质钽电容器介质膜晶化现象和机理进行了讨论,并结合CA45-H-35V-470μF固体电解质钽电容器的失效分析对介质膜晶化引起电容器失效进行了进一步的说明.采用筛选、物理分析和降额使用的方法,可有效避免介质膜晶化引起的钽电解电容器失效. 相似文献
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本文研究了Ge/Bi叠层膜在不同退火温度的晶化及扩散行为。通过X射线衍射和拉曼散射的结果发现:在200℃至340℃之间退火的样品,其Bi晶粒的结晶取向经历了一个由择优取向变为随机取向,最后又变顺择优取向的过程;而与此同时,Ge晶粒的结晶取向变化不大。 相似文献
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X衍射法分析CVD制备SnO2多晶膜的构成及其对气敏特性… 总被引:1,自引:0,他引:1
通过X光衍射图分析,确认了较低温度下CVD法生长的非掺杂SnO2晶膜含有较多的偏离SnO2配位的晶体成分,从而定性地解释了该晶膜具有较高的气体敏感度的现象。 相似文献
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通过X光衍射图分析,确认了较低温度下CVD法生长的非掺杂SnO2晶膜含有较多的偏离SnO2配位的晶体成份,从而定性地解释了该晶膜具有较高的气体敏感度的现象。 相似文献
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在空腔模型理论基础上,利用微扰法对切角矩形微带天线进行严密的数学推论.并设计了GPS双馈点双频圆极化陶瓷微带天线.根据设计公式计算出结构参数,在Ansoft-HFSS软件中建立天线模型,通过参数优化得到天线参数,并利用LTCC工艺进行样品制作.结果表明:样品天线工作在1575 MHz和1 227 MHz时,10 dB带宽均大于10 MHz,回波损耗均小于-15 dB,轴比均小于4 dB,仿真结果与测试结果相似.总结了天线小批量生产的经验,提出了进一步小型化的研究方向. 相似文献
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The doping dependence of the velocity-field characteristic in InGaAs has been investigated by an analysis of measurements
with transferred-electron devices. The electron peak velocity has been determined directly as a function of electron concentration
and low-field mobility. The carrier-concentration dependence of the velocity-field characteristic has been deduced by comparing
experimental and theoretical transient device behaviour. The experimental results support a theoretical approach for the velocity-field
characteristic which has been proposed recently. 相似文献
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A glucose biosensor based on a high-transconductance ISFET transduction element with aspect ratio (channel width/length) of 400 has been developed. This biosensor is an N-channel enhancement mode device with interdigitated drain-source geometry, fabricated by the NMOS process, in which glucose oxidase (GOD) enzyme has been immobilized over the silicon dioxide-silicon nitride dual-dielectric gate. The device has been operated in the active mode by applying a gate voltage through Ag/AgCl reference electrode. Electrical characterization has been performed in terms of I-V characteristics like output characteristics and leakage current. The pH response characteristics have been measured and the pH sensitivity factor has been found to be?≥?50?mV/decade. Device characterization has also been performed by a signal conditioning circuit developed for direct readout of pH from the ISFET device. Temperature behaviour and drift phenomenon have been investigated. The glucose response characteristics of the ISFET have been determined, without and with the glucose oxidase enzyme layer. Improvement of the glucose sensitivity by deposition of the enzyme layer has been studied and cross-sensitivity of the device towards urea has been examined. The advantage of the high transconductance was evident from the ability of the sensor to detect small glucose concentrations without the enzyme layer. The paper describes the design, fabrication and characterization of the sensor. 相似文献
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A theoretical treatment of the rectangular microstrip radiating element has been performed. The element has been modeled as a line resonator with radiation taking place at the open-circuited ends. This has been verified by using a liquid crystal visual detector. With the simplified model, the input impedance and the far fields have been calculated for different resonant modes. The interaction between the radiating ends will effect the input impedance, and this has been considered by defining a mutual conductance. Also, a mutual conductance between microstrip elements has been expressed in far-field quantities and plotted as a function of spacing along theE - andH - planes. The directivity of an isolated element has been calculated as the directivity of one radiating end times the contribution due to the array factor. 相似文献
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二频机抖激光陀螺温度漂移补偿的初步研究 总被引:5,自引:1,他引:4
从实验上研究了二频机抖陀螺的零偏和温度的关系。通过重复性温度实验,利用最小二乘法得到了拟合曲线表达式。结果表明,二频机抖陀螺的零偏和温度具有较好的线性关系和重复性,可以通过温度补偿来提高陀螺的精度。 相似文献
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评估指标体系的构建是一个复杂的系统工程,优化是其中重要的一步。指标相关性和冗余指标的存在一直都是体系构建工作中的重要问题。采用相关系数赋权方法降低指标间的相关性对评估结果造成的影响,并采用粗糙集属性约简方法减少冗余指标,从而完成评估指标体系的优化。采用该方法对通信网可靠性指标体系进行了相应优化,降低了指标体系的相关性与冗余度。 相似文献