Microstructures and Microwave Dielectric Characteristics of Ca(Zn1/3Nb2/3)O3 Complex Perovskite Ceramics

Ca(Zn_1/3Nb_2/3)O₃ microwave dielectric ceramics were prepared using a solid-state reaction process, and their microwave dielectric properties were evaluated as functions of sintering and postdensification annealing conditions. The relationship between microwave dielectric properties and processing was interpreted through the variation of microstructures. The dielectric constant showed slight variation with sintering and annealing conditions, but the Q × f value increased at first and then decreased with increased sintering temperature, and annealing in oxygen indicated significant improvement in Q × f , especially for the specimens sintered at higher temperatures. The good microwave dielectric properties were obtained in the ceramics sintered at 1225°C in air for 3 h and annealed at 1100°C in oxygen for 8 h: ɛ= 34.1, Q × f = 15 890 GHz, τ_f=−48 ppm/°C.     

Dielectric Properties of Ceramics in Ba (Co1/3 Nb2/3)O3–Ba(Zn1/3Nb2/3)O3 Solid Solution

The dielectric properties of the Ba (Co_1/3 Nb_2/3)O₃–Ba(Zn_1/3Nb_2/3)O₃ system were determined. Ba (Co_1/3 Nb_2/3)O₃–Ba(Zn_1/3Nb_2/3)O₃ has a complex perovskite structure, a high dielectric constant, a low dielectric loss, and a low temperature coefficient of the resonant frequency. A solid-solution ceramic with 0.7Ba (Co_1/3 Nb_2/3)O₃·0.3 Ba(Zn_1/3Nb_2/3)O₃ has a dielectric constant of K=33.5, Q=11000 at 6.5 GHz, and a temperature coefficient of the resonant frequency of τ_f=0 ppm/°C. The temperature coefficient of resonant frequency can be varied by changing the composition. The Q values of the ceramics can be increased by annealing in a nitrogen atmosphere. These ceramics can be used for resonant elements and stabilized oscillators.     

Phase transition in Sol-Gel processed barium titanate ceramics

Ferroelectric barium titanate (BaTiO₃) ceramics have been prepared from barium acetate [Ba(CH₃COO)₂] and titanium isopropoxide [Ti(CH₃)₂CHO)₄] precursors by sol-gel technique The as-grown powder was found to be amorphous which crystallized to tetragonal phase after annealing at 700°C in air for one hour. The ceramics showed well saturated polarization-field (P-E) hysteresis loops at room temperature. The values of spontaneous polarization(P_s), remanent polarization (P_r) and coercive field (E_c) of the ceramics were found to be19.0, 12.66μC-cm^-2 and 30KVcm^-1 respectively. The room temperature dielectric constant (ε) and loss tangent (tanδ) of the ceramics were found to be 1135 and 0.012 respectively. The dielectric constant and tanδ showed anomaly peaks at 125°C showing ferroelectric to paraelectric phase transition. The polarization parameters also vanish at 125°C confirming the phase transition.     

Effect of Bottom Electrode Materials and Annealing Treatments on the Electrical Characteristics of Ba0.47Sr0.53TiO3 Film Capacitors

The dielectric constant and leakage current density of Ba_0.47Sr_0.53TiO₃ (BST) thin films deposited by radio-frequency magnetron sputtering on various bottom electrode materials (Pt, Ir, IrO₂/Ir, Ru, RuO₂/Ru) before and after annealing in O₂ and N₂ ambient were investigated. Improvement in crystallinity of BST films deposited on various bottom electrodes was observed with annealing. The refractive index, dielectric constant, loss tangent, and leakage current of the films were also strongly dependent on annealing conditions. A BST thin film deposited on an Ir bottom electrode at 500°C, after 700°C annealing in O₂ for 20 min, had a dielectric constant of 593 ± 5%, a loss tangent of 0.019 ± 10% at 100 kHz, a leakage current of (2.1 ± 13%) 10⁻⁸ A/cm² at an electric field of 100 kV/cm with a delay time of 30 s, and a charge storage density of 53 ± 5% fC/μm² at an applied field of 150 kV/cm. Based on the dielectric constant, leakage current, and reliability, the optimum material for the bottom electrode with annealing was Ir. Interdiffusion of Ru and Ti at the interface between the BST film and Ru electrode was observed in 500°-700°C annealed samples. The 10 year lifetime of time-dependent dielectric breakdown (TDDB) studies indicated that BST on Pt, Ir, IrO₂/Ir, Ru, and RuO₂/Ru had long lifetime over 10 years of operation at a voltage bias of 1 V.     

Unique Dielectric Behavior of 0.6Pb(Ni1/2W1/2)O3·0.4PbTiO3 Derived from Mechanical Activation

0.6Pb(Ni_1/2W_1/2)O₃·0.4PbTiO₃(0.6PNW·0.4PT) of complex perovskite structure is successfully synthesized by mechanical activation of mixed oxide composition, followed by sintering at 950°C. It exhibits a considerably stable temperature dependence of dielectric constant over the wide temperature range of −120° to 20°C, although there occurs a dielectric peak at around 74°C. Raman spectroscopic studies show the coexistence of tetragonal and pseudocubic perovskite phases on sintering at 950°C, which are attributed to the inhomogeneous distribution of PbTiO₃ arising from mechanical activation. The dielectric behavior can be fine tuned by thermal annealing at 750°C, leading to phase redistribution in PNW-PT.     

Synthesis of High Magnetoelectric Coefficient Composites Using Annealing and Aging Route

In this paper, aging temperature and time dependence of ferroelectric, ferromagnetic, and magnetoelectric properties of lead zirconate titanate and nickel ferrite composite (1– x ) Pb(Zr_0.52Ti_0.48)O₃– x NiFe_1.9Mn_0.1O₄ (PZT–NFM, x =0.03, 0.05, 0.1) are reported. The magnetoelectric composites of different compositions were fabricated by using a process based on the controlled precipitation route. The processing is a combination of conventional mixed oxide sintering and thermal treatment. The thermal treatment consists of annealing at a high temperature (800°C for 10 h), followed by aging in the range of 300–400°C for 3–15 h. X-ray diffractometry patterns show variation in the amount of spinel phase with different aging temperature and time. Scanning electron microscopy investigation showed that the annealing and aging treatment increases the homogeneity of NFM in the PZT matrix. The magnitude of piezoelectric constant ( d ₃₃), piezoelectric voltage constant ( g ₃₃), and the dielectric constant exhibited significant variation in magnitude with aging time and temperature. Aging at 400°C for 5 h exhibited a maximum magnitude of d ₃₃ and g ₃₃ and minimum magnitude of dielectric constant. The magnitude of the magnetoelectric (ME) voltage coefficient (d E /d H ) for 0.9PZT–0.1NFM samples sintered at 1125 °C was found to be of the order of 78 mV/cm Oe. This magnitude increased to 140 mV/cm Oe after annealing and aging at 300°C for 5 h. This significant enhancement in the magnetoelectric coefficient is probably due to the homogenization and precipitation of the spinel (NFM) phase in the perovskite matrix.     

Dielectric constant in the incommensurate phase of NH4HSeO4 under electric field

The temperature dependence of the dielectric constant has been measured in NH₄HSeO₄ crystal at bias electric field. It is shown that the temperature of phase transition from the incommensurate to the commensurate phases depends nonlinearly on the applied electric field. Lifshitz point has been reached at field 1.1 MV/m.     

Size effect on dielectric properties of fine-grained BaTiO3 ceramics

The effect of grain size on the dielectric behavior of high-purity, fine-grained BaTiO₃ ceramic has been investigated. It was found that the dielectric constant and dissipation factor changed much with the decreasing of average grain size. The specimen with grain size of 280 nm had a high dielectric constant at room temperature, and the _r-T and tanδ-T curves remarkably changed with the grain size. Part of the grains remaining ferroelectric structure was ascribed to the high value of dielectric constant. ©     

Intrinsic Size Effects in a Barium Titanate Glass-Ceramic

A series of glass ceramics have been synthesized to produce bulk materials with nanometer-sized barium titanate (BaTiO₃) crystals grown in a residue glass matrix. Structure-property relations have been made to determine the size distribution and the dielectric temperature dependence of the ceramics. Through dielectric and density mixing laws, it has been inferred that depolarization fields limit the dielectric polarizability of the particles and influence the transition temperature. The transition temperature, dielectric anomaly broadening, and peak dielectric constant all scale systematically with the mean size of the BaTiO₃ crystals, which is consistent with an intrinsic size effect. In addition, scaling the transition temperature with the Ishikawa relation predicts a critical size of 17 nm, for which BaTiO₃ cannot support a ferroelectric transition. These results are discussed in relation to other size studies on ferroelectric materials.     

Reverse Micellar Route to Nanocrystalline Titanates (SrTiO3, Sr2TiO4, and PbTiO3): Structural Aspects and Dielectric Properties

Nanoparticles of strontium titanates (SrTiO₃, Sr₂TiO₄) and lead titanate (PbTiO₃) have been obtained using reverse micelles as nanoreactors. Powder X-ray diffraction studies of the powders after calcining at 800°C show monophasic SrTiO₃, Sr₂TiO₄, and PbTiO₃. X-ray line broadening studies and transmission electron microscopic studies show spherical grains of 30–40 nm size for strontium titanates, while PbTiO₃ is obtained in the form of nanorods. The dielectric constant of SrTiO₃ and Sr₂TiO₄ is found to be 90 and 30, respectively, (at 100 kHz) for samples sintered at 1000°C. PbTiO₃ shows a dielectric constant of 160 (at 100 kHz) after sintering at 900°C. The dielectric constant of Sr₂TiO₄ (with temperature) is highly stable. The temperature variation studies of the dielectric constant of PbTiO₃ show a ferroelectric phase transition at 490°C (1 kHz). The T _c varies with frequency and is found to decrease to 470°C at 100 kHz.     

Acoustic emission, dielectric constant, thermal expansion and domain structure of BaTiO3 crystals near the phase transition

By the acoustic emission, dielectric constant and thermal expansion methods BaTiO₃ crystals have, been investigated near the phase transition. Domain structive have been photographed on the reflected polarized light. The crystale composite etched and its properties have been recorded after every etching. The dielectric constant and the thermal expansion curves have been carried out the anomalies are accomponied by the acoustic emission. Being lied at 7-10°C below T_c, the temperature of these anomalies have been approaching to T_c as far as one etch the crystals. The quantities of these anomalies and the acoustic emission activity has been decreasing, and the domain structure has been simplefied too. It is shown, these observed anomalies lire a result of the internal stresses into the surface layers.     

Influence of Stress and Chemical Homogeneity on Dielectric Properties of BaTi0.9Zr0.1O3

The influence of mechanical stress and chemical homogeneity on the permittivity of BaTi_0.9Zr_0.1O₃ ceramics prepared from mixed-oxide and hydrothermal powders was studied. To reduce stress, liquid-phase sintering was applied in conjunction with a low heating rate to stimulate the formation of large grains. The influence of chemical homogeneity was studied by variations in sintering temperatures and times. For both types of ceramics, the dielectric constant at the Curie temperature was influenced by both factors, but to a different extent. In the mixed oxide ceramic, chemical homogeneity played a more prominent role, while internal stress appeared to exert a larger influence in the hydrothermal ceramics. The dielectric constant at the Curie temperature could be increased by 5%–10% by an annealing treatment at 200°C, followed by slow cooling.     

Preparation and Characterization of BaxSr1-x, TiO3 Thin Films by a Sol-Gel Technique

Barium strontium titanate, (Ba_x,Sr_1-x TiO₃, thin films of various compositions were prepared by a sol-gel method. Solutions consisting of acetate powders and titanium IV isopropoxide in a mixture of acetic acid and ethylene glycol were spin-coated onto silicon and platinum-coated silicon substrates. Processing parameters were optimized to develop stable solutions which yielded films with relatively low crystallization temperatures. It was determined that ethylene glycol was a necessary component of the solution to increase stability to precipitation and to decrease the crystallization temperature of the films. The grain size of the films varied with annealing temperature and atmosphere and directly affected the dielectric properties. A dielectric constant of 400 and a dissipation factor of 0.04 were measured at 1 kHz for (Ba_0.8,Sr_0.2) TiO₃ films heated to 700°C for 1 h with a thickness of approximately 400 nm. Films of this composition maintained low leakage current densities for extended time periods when measured at an applied field of 75 kV/cm.     

Preparation of Dense Ta2O5-Based Ceramics by a Coated Powder Method for Enhanced Dielectric Properties

A hybrid solution-coated powder method was used to reduce the sintering temperature of TiO₂-modified Ta₂O₅ ceramics. This simple and effective method allowed chemical homogenization and densification to take place below a densification-impeding phase transformation, something that has not been achieved by traditional mixed oxide processing. Combining the coated powder method with a two-stage heat treatment (by which specimens were first densified and then transformed into the high dielectric constant H-Ta₂O₅ phase) enabled the realization of dense and homogeneous 92Ta₂O₅–8TiO₂ ceramics with dielectric constant values up to 280 at room temperature.     

Preparation and Electrical Properties of Lanthanum-Doped Lead Titanate Thin Films by Sol–Gel Processing

Lanthanum-doped lead titanate thin films have been prepared by sol–gel processing. These studies reveal the structural and electrical properties of 18 mol% La-doped PbTiO₃ thin films to be dependent on the annealing conditions. With appropriate annealing conditions, a relative dielectric constant of about 900 was obtained, comparable to the bulk composition.     

Preparation and dielectric properties of B2O3–Li2O-doped BaZr0.35Ti0.65O3 ceramics sintered at a low temperature

BaZr_0.35Ti_0.65O₃ (BZT) ceramics have been fabricated via a traditional ceramic process at a relatively low sintering temperature using liquid-phase sintering aids B₂O₃ and Li₂O. The dielectric properties of BZT ceramics have been investigated with the emphasis placed on the dielectric properties under an applied dc electric field. The temperature-dependent dielectric constant reveals that the pure BZT and B₂O₃–Li₂O-doped BZT ceramics all have a typical relaxor behavior and diffuse phase transition characteristics. The temperature-dependent dielectric constant under the applied dc electric field shows that the Curie temperature is slightly shifted to higher temperature and the peaks are suppressed and broadened. The dielectric loss is still under 0.005 and tunability is above 20% at an applied dc electric field of 30 kV/cm.     

Chemical Heterogeneity in PMN–35PT Ceramics and Effects on Dielectric and Piezoelectric Properties

Pb[(Mg_1/3Nb_2/3)_0.65Ti_0.35]O₃ (PMN–35PT) powder was prepared using the columbite precursor method. Fully dense compacts were formed by hot-pressing the powder at 950°C, and then the compacts were annealed at 1150°C for 5 and 10 h, respectively. Dielectric and piezoelectric properties of the as-hot-pressed and annealed samples were measured and correlated with microstructure. The as-hot-pressed material exhibited relaxor–ferroelectric-like behavior, with a relatively low dielectric constant maximum measured at 1 kHz ( K _m@1kHz) of 8160. Annealing resulted in a transition to weak normal-ferroelectric behavior, a shift in the dielectric maximum temperature from 190°C to 169°C, and a dramatic increase of K _m@1kHz to a maximum value of 41 720 for the longer anneal. The as-hot-pressed microstructure was chemically heterogeneous, characterized by submicrometer-sized regions of varying magnesium, niobium, and titanium content that likely originated from chemical heterogeneities that were present in the as-prepared PMN-PT powder. The as-hot-pressed properties have been explained as being the integrated response of many discrete ferroelectric responses as dictated for each of these regions by the local chemistry. The transition on annealing has been explained in terms of chemical homogenization to a near-morphotropic phase-boundary composition that is intrinsically weak normal-ferroelectric. Differences in polarization-versus-electric-field and strain-versus-electric-field behavior between the hot-pressed and annealed materials have been discussed in terms of differences in domain mobility.     

Crystallization and Dielectric Properties of SrO–BaO–Nb2O5–SiO2 Tungsten-Bronze Glass-Ceramics

The crystallization and dielectric properties of SrO–BaO–Nb₂O₅–SiO₂ glass-ceramics have been investigated. Glass-ceramics that contain strontium barium niobate (SBN) as a primary crystalline phase, which has a tungsten bronze structure, are produced. The formation of crystalline secondary phases also has been studied. The SBN phase shows evidence of both surface nucleation and bulk nucleation, and the crystals have an average composition of Sr_0.47Ba_0.53Nb₂O₆. The dendritic morphology of the SBN crystals has been examined. The SBN content and composite dielectric constant each has been studied as a function of heating temperature/time. The highest SBN content and dielectric constant obtained in the present study are 42 vol% and 180, respectively. The dielectric constant of the glass-ceramics is determined primarily by the SBN content and the residual glass phase. The dielectric constant of the randomly oriented SBN crystal in the glass-ceramics is calculated, using dielectric mixture rules, to be ∼400.     

Microstructure and Dielectric Characteristics of (PbxBa0.5−xSr0.5)TiO3 Ceramics

Microstructural and dielectric properties of the Pb _x Ba _0.5__x —Sr_0.5TiO₃ system have been studied. It is found that this system forms a solid solution in the entire composition range (0.0≤ x ≤0.5) and is cubic for the x = 0, 0.1, and 0.2 compositions and tetragonal for other compositions. Measurements of the dielectric constant as a function of temperature reveal that this material is ferroelectric at room temperature for the x > 0.2 compositions and has a broad paraelectric-ferroelectric transition region. No shift in the dielectric maxima was noted; however, there is a slight spread in the dielectric constant with frequency for the x = 0.4 composition. A quantitative model to mathematically analyze the effect of composition fluctuations on the dielectric broadening for a ternary system is presented. Transmission electron microscopic studies reveal the presence of 90° ferroelectric domains oriented along the {01     } planes for the x = 0.3 and 0.4 compositions.     

Influence of Rare-Earth Dopants on Barium Titanate Ceramics Microstructure and Corresponding Electrical Properties

In this article, ytterbium and erbium oxides are used as doping materials for barium titanate (BaTiO₃) materials. The amphoteric behavior of these rare-earth ions leads to the increase of dielectric permittivity and decrease of dielectric losses. BaTiO₃ ceramics doped with 0.01–0.5 wt% of Yb₂O₃ and Er₂O₃ were prepared by conventional solid-state procedure and sintered at 1320°C for 4 h. In BaTiO₃ doped with a low content of rare-earth ions (0.01 wt%) the grain size ranged between 10 and 25 μm. With the higher dopant concentration of 0.5 wt%, the abnormal grain growth is inhibited and the grain size ranged between 2 and 10 μm. The measurements of capacitance and dielectric losses as a function of frequency and temperature have been carried out in order to correlate the microstructure and dielectric properties of doped BaTiO₃ ceramics. The temperature dependence of the dielectric constant as a function of dopant amount has been investigated.