CISPR／H

1关于IEC61000—6—4第一工作组会议的召集人Mr．Griffin,报告了收到的关于IEC61000—6—4Amd．1／Ed．2．0工业环境的骚扰标准及IEC61000—6—3Amd．1／Ed．2．0居住、商业和轻工业环境的骚扰标准这两项报批稿中的回复意见,这些意见将在两个通用标准的下一稿修订版中考虑修订。     

Nordic单片433／868／915MHz收发器nRF905

nRF905是单片射频收发器,工作电压为1．9～3．6V,32引脚QFN封装（5mm×5mm）,工作干433／868／915MHz三个ISM（工业、科学和医学）频道,频道之间的转换时间小于650μs。其由频率合成器、接收解调器、功率放大器、晶体振荡器和调制器组成,     

CISPR／F

1家用电器、电动工具和类似器具部分 1．1关于参考方法的争论 会议根据CISPR／F／484／RQ文件,讨论了对CISPR／F／475／Q文件的调查结果（关于在CISPR／F／453／CDV中引人参考方法的调查。     

LTC3788／-1：同步升压型控制器

Linear推出双输出、大功率同步升压型开关DC／DC控制器LTC3788／-1,该器件用一个高效率N沟道MOSFET取代了升压二极管。这消除了在中到大功率升压型转换器中通常需要的散热器。LTC3788／．1在5A输出时能以97％的效率产生24V电压,从而使其适用于大功率汽车音频放大器、工业和医疗应用,     

2007年ISO／IEC JTC1／SC6全会工作动向

4月9～13日，ISO／IECJTC1／SC6全会在中国西安召开，参加此次会议的代表有包括中、美、英、法、日、韩、捷克、中国香港等八个国家和地区的70余位代表，中国代表团由信息产业部电子工业标准化研究所林宁副所长任团长、国内22家企事业单位的32名正式团员组成。本次SC6全会由WG1、WG7、WG9、团长会议和全会组成。     

SD45215／16／17：DC／DC转换器

杭州士兰微电子公司推出了适用于车载电子系统的限流值可调、高效降压型SD4521X系列DC／DC转换器,包括SD45215／16／17。该系列芯片采用恒压／恒流控制模式,具有抖频功能,系统效率达90％以上。SD45215／16117分别拥有1．5A／2．1A／2．1A的输出电流能力,可广泛应用于车载充电器领域。     

基于PC／104总线的数字伺服系统

PC／104作为新型的工业总线标准，功能强大，扩展方便，通用性好，在工业和军用设备中得到广泛的应用，本文简要介绍了PC／104的特点，并介绍一种实用的以PC／104为核心的数字伺服系统的设计。     

CISPR／D

1 CISPR／D／340／INF文件 CISPR／D／340／INF文件是针对CISPR 16—1—4和CISPR16—1—5提出的议案，即用参考场（RSM）法作为归一化场地衰减法（NSA）的一个替代，来确定场地的符合性。     

TRACOPOWER发布微型AC／DC电源模块,可提供单／双输出

TRACOPOWER推出TMT系列新一代超小型AC／DC电源模块，功率为15和30W，输入电压范围在5至24VDC之间，可提供单输出和双输出电压。这些完全密封的模块采用焊接引脚以用于PCB安装，或螺钉终端模块用于机箱安装。此外，还提供利于DIN导轨直接扣入安装的适配器。15瓦型号的大小仅为2．16×1．77×1．10”，30瓦的大小仅为2．99 x 2．00×1．10”。这些电源采用通用交流输入(85-264VAC)，工作温度范围在-25℃至 50℃之间，功率性能不会下降。这些电源模块已经通过IEC／UL60950-1-2(工业)和IEC／UL0601-1-2(医疗)的二级安全(无接地…     

高温稳定电路用的AlGaAs／GaAs／AlGaAsDHBT

高温稳定电路用的ＡｌＧａＡｓ／ＧａＡｓ／ＡｌＧａＡｓＤＨＢＴ在深级钻探、工业加工控制和航天航空等领域所使用的电子设备都要设计得能在３５０℃，甚至更高的温度下工作。ＧａＡｓ／ＡＩＧａＡｓ系统正好能够适合这一温度范围的要求，因为其带隙大于１．４ｅＶ。据《...     

Performance improvement in tensile-strained In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As metamorphic HEMT

This paper proposes a In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As (x=0.3-0.5-0.3) metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel structure exhibits significant improvements in dc and RF characteristics, including extrinsic transconductance, current driving capability, thermal stability, unity-gain cutoff frequency, maximum oscillation frequency, output power, power gain, and power added efficiency.     

Very low-noise Al/sub 0.3/Ga/sub 0.7/As/Ga/sub 0.65/In/sub 0.35/As/GaAs single quantum-well pseudomorphic HEMTs

AlGaAs/GaInAs/GaAs pseudomorphic HEMTs with an InAs mole fraction as high as 35% in the channel has been successfully fabricated. The device exhibits a maximum extrinsic transconductance of 700 mS/mm. At 18 GHz, a minimum noise figure of 0.55 dB with 15.0 dB associated gain was measured. At 60 GHz, a minimum noise figure as low as 1.6 dB with 7.6 dB associated gain was also obtained. This is the best noise performance yet reported for GaAs-based HEMTs.<>     

A 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode array

We report a 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode (APD) array. The mean breakdown voltage of the APD was 57.9 V and the standard deviation was less than 0.1 V. The mean dark current was /spl sim/2 and /spl sim/300 nA, and the standard deviation was /spl sim/0.19 and /spl sim/60 nA at unity gain (V/sub bias/ = 13.5 V) and at 90% of the breakdown voltage, respectively. External quantum efficiency was above 40% in the wavelength range from 1.0 to 1.6 /spl mu/m. It was /spl sim/57% and /spl sim/45% at 1.3 and 1.55 /spl mu/m, respectively. A bandwidth of 13 GHz was achieved at low gain.     

Al/sub 0.3/Ga/sub 0.7/As/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) doped-channel field-effect transistors (DCFET's)

The properties of both lattice-matched and strained doped-channel field-effect transistors (DCFET's) have been investigated in AlGaAs/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) heterostructures with various indium mole fractions. Through electrical characterization of grown layers in conjunction with the dc and microwave device characteristics, we observed that the introduction of a 150-/spl Aring/ thick strained In/sub 0.15/Ga/sub 0.85/As channel can enhance device performance, compared to the lattice-matched one. However, a degradation of device performance was observed for larger indium mole fractions, up to x=0.25, which is associated with strain relaxation in this highly strained channel. DCFET's also preserved a more reliable performance after biased-stress testings.<>     

Morphological and electrical characterization of SixCryCzBv thin films

Si_xCr_yC_zB_v thin films with several compositions have been studied for integration of high precision resistors in 0.8 μm BICMOS technology. These resistors, integrated in the back-end of line, have the advantage to provide high level of integration and attractive electrical behavior in temperature, for analog devices. The film morphology and the structure have been investigated through transmission electron microscopy analysis and have been then related to the electrical properties on the base of the percolation theory. According to this theory, and in agreement with experimental results, negative thermal coefficient of resistance (TCR) has been obtained for samples with low Cr content, corresponding to a crystalline volume fraction below the percolation threshold.Samples with higher Cr content exhibit, instead, a variation of the TCR as a function of film thickness: negative TCR values are obtained for thickness lower than 5 nm, corresponding to a crystalline volume fraction below the percolation threshold; positive TCR are obtained for larger thickness, indicating the establishment of a continuous conductive path between the Cr rich grains. This property seems to be determinant in order to assure the possibility to obtain thin film resistors almost independent on the temperature.     

Highly linear Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMTs

We report an Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMT with enhanced linearity. By engineering the channel region, i.e., inserting a 6-nm-thick AlGaN layer with 5% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 /spl times/100 /spl mu/m HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. The composite-channel HEMT exhibits a peak transconductance of 150 mS/mm, a peak current gain cutoff frequency (f/sub T/) of 12 GHz and a peak power gain cutoff frequency (f/sub max/) of 30 GHz. For devices grown on sapphire substrate, maximum power density of 3.38 W/mm, power-added efficiency of 45% are obtained at 2 GHz. The output third-order intercept point (OIP3) is 33.2 dBm from two-tone measurement at 2 GHz.     

Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices

Nonvolatile memories have emerged in recent years and have become a leading candidate towards replacing dynamic and static random-access memory devices. In this article, the performances of TiO₂ and TaO₂ nonvolatile memristive devices were compared and the factors that make TaO₂ memristive devices better than TiO₂ memristive devices were studied. TaO₂ memristive devices have shown better endurance performances (10⁸ times more switching cycles) and faster switching speed (5 times) than TiO₂ memristive devices. Electroforming of TaO₂ memristive devices requires~4.5 times less energy than TiO₂ memristive devices of a similar size. The retention period of TaO₂ memristive devices is expected to exceed 10 years with sufficient experimental evidence. In addition to comparing device performances, this article also explains the differences in physical device structure, switching mechanism, and resistance switching performances of TiO₂ and TaO₂ memristive devices. This article summarizes the reasons that give TaO₂ memristive devices the advantage over TiO₂ memristive devices, in terms of electroformation, switching speed, and endurance.     

Electrooptic ferroelectric Na/sub 0.5/K/sub 0.5/NbO/sub 3/ films

We report on waveguiding and electrooptic properties of epitaxial Na/sub 0.5/K/sub 0.5/NbO/sub 3/ films grown by radio-frequency magnetron sputtering on Al/sub 2/O/sub 3/(11_02) single crystal substrates. High optical waveguiding performance has been demonstrated in infrared and visible light. The in-plane electrooptic effect has been recorded in transmission using a transverse geometry. At dc fields, the effective linear electrooptic coefficient was determined to 28 pm/V, which is promising for modulator applications.