Electric and dielectric properties of solution-gas interface-grown PbS films

Dielectric properties andI–V characteristics of solution-gas interface-formed PbS thin-film capacitors (Al/PbS/Al) of various thicknesses have been studied in the frequency range 10-10⁶ Hz at various temperatures (300–443 K). Current-voltage (I–V) characteristics show space-charge-limited conduction. Dielectric constant (ε) increases with increasing film thickness and temperature and decreases with increase of frequency. The loss factor (tanδ) peaks observed in tanδ vs frequency and tanδ vs temperature reveal relaxation effect from dipolar orientation. These maxima shift to higher-temperature region with increasing frequency. The large increase in capacitance (C) and dielectric constant (ε) towards low-frequency (f) region indicates the possibility of an interfacial polarization mechanism in this region.     

Study of dielectric properties of RbNO3 single crystals

Dielectric properties, dielectric constant (k), dielectric loss (tan δ) and a.c. conductivity (σ) in the solution-grown single crystals of RbNO₃ are presented from room temperature to about 200°C covering the frequency range 10² to 10⁵ Hz. A broad peak observed in tan δ-frequency data between 10³ and 10⁵Hz is thought to be due to impurity-vacancy dipoles. The sudden rise of three parameters near 160°C is attributed to the known phase transition from trigonal to CsCl structure.     

Dielectric properties of NaF-B2O3 glasses doped with certain transition metal ions

Dielectric constant ε, loss tan δ, a.c. conductivity Σ and dielectric breakdown strength of NaF-B₂O₃ glasses doped with certain transition metal ions (viz. Cu²⁺, VO²⁺, Ti⁴⁺ and Mn⁴⁺) are studied in the frequency range 10²-10⁷ Hz and in the temperature range 30–250°C. The values of ε, tan δ, Σ_a.c. are found to be the highest for Cu²⁺ doped glasses and the lowest for Mn⁴⁺ doped glasses. Activation energy for a.c. conduction and the value of dielectric breakdown strength are found to be the lowest for Cu²⁺ doped glasses and the highest for Mn⁴⁺ doped glasses. With the help of infrared spectra, increase in the values of ε and tan δ of these glasses with frequency and temperature are identified with space charge polarization. An attempt has been made to explain a.c. conduction phenomenon on the basis of quantum mechanical tunneling model (QMT)/carrier barrier hopping model.     

Evaluation of a.c. conductivity behaviour of graphite filled polysulphide modified epoxy composites

Composites of epoxy resin having different amounts of graphite particles have been prepared by solution casting method. Temperature dependence of dielectric constant, tan δ and a.c. conductivity was measured in the frequency range, 1–20 kHz, temperature range, 40–180°C for 0.99, 1.96 and 2.91 wt% graphite filled and unfilled epoxy composites. It was observed that the dielectric constant, tanδ and a.c. conductivity increase with increasing temperature. Near the transition temperature the materials show anomalous behaviour for the observed properties. Peaks of dielectric constant, tan δ and a.c. conductivity were observed to shift towards lower temperature with increasing frequency. Clear relaxation (tan δ) peaks around 169°C were observed in epoxy resin, which shifted to lower temperature side on increasing the frequency. Addition of 2.91 wt% graphite shifted the tan δ peaks towards higher temperature side by creating hindrances to the rotation of polymer dipoles. Addition of 2–91 wt% graphite leads to an increased relaxation time τ of dipoles in polysulphide epoxy from 1.44 × 10⁻⁵− 3.92 × 10⁻⁵ (s) at 90°C by creating the hindrance to the rotation of dipoles.     

Characterization and dielectric properties of almandine-pyrope garnet

Some garnets collected from the Kothagudem area of Khammam district in Andhra Pradesh were characterized by chemical analysis. The results show the garnets to be of almandine (Fe⁺² ₃ Al₂Si₃O₁₂) pyrope (Mg₃Al₂Si₃O₁₂) group. Dielectric constant (ɛ) and dielectric loss (tanδ) were measured as a function of frequency and temperature in the frequency range of 100 Hz to 100 KHz and from room temperature to 400°C. The room temperature measurement was extended to 10 MHz, AC conductivity was calculated from the data on ε and tan δ. DC conductivity was also measured.     

Dielectric behaviour of erbium substituted Mn-Zn ferrites

Dielectric properties such as dielectric constant (ε′) and dielectric loss tangent (tan□δ) of mixed Mn-Zn-Er ferrites having the compositional formula Mn_0.58Zn_0.37Fe_2.05−xEr_x0₄ (where itx = 0.2, 0.4, 0.6, 0.8 and 1.0) were measured at room temperature in the frequency range 1–13 MHz using a HP 4192A impedance analyser. Plots of dielectric constant (ε′) vs frequency show a normal dielectric behaviour of spinel ferrites. The frequency dependence of dielectric loss tangent (tan δ) was found to be abnormal, giving a peak at certain frequency for all mixed Mn-Zn-Er ferrites. A qualitative explanation is given for the composition and frequency dependence of the dielectric constant and dielectric loss tangent. Plots of dielectric constant vs temperature have shown a transition near the Curie temperature for all the samples of Mn-Zn-Er ferrites. However, Mn_0.58Zn_0.37Er_1.0Fe_1.05O₄ does not show a transition. On the basis of these results an explanation for the dielectric mechanism in Mn-Zn-Er ferrites is suggested.     

Study of ac electrical conductivity and dielectric properties of ortho-hydroxy acetophenone azine thin films

AC electrical conductivity measurements were carried out in the temperature range 290–473 K over the frequency range 0.1–20 kHz of vacuum deposited Ortho-hydroxy acetophenone azine films. It was found that the ac electrical conductivity increases with frequency according to the relation σ_ac(ω) = A ω^s. The values of the dielectric constant, , slightly changed in higher frequencies irrespective of temperature change, whereas its value increases in higher temperature with the decrease in frequency. Also, the dielectric loss, ɛ′′, and tan δ, has been found to increase with raise in temperature and decrease in frequency. The obtained experimental data has been analyzed with reference to various theoretical models. The analysis shows that the correlated barrier hopping (CBH) model is the most appropriate mechanism for the ac electrical conduction in these films.     

Electrical properties of thermally evaporated tellurium thin films

Results of dielectric and conduction properties of vacuum evaporated tellurium (Te) thin film capacitors (Al-Te-Al) have been reported in the frequency range 1–100 kHz at various temperatures (303–423 K). Loss factor (tanδ) which shows a maximum with frequency increases with rise of temperature and tanδ _max shift towards high frequency region. The large values of capacitance and dielectric constant (ɛ′) in the low frequency region indicate the possibility of an interfacial polarization mechanism.I-V characteristics show ohmic, space charge limited (SCLC) and thermionic emission conduction mechanisms to operate at low, intermediate and high voltages respectively. Various transport parameters have been calculated. It has been observed that the Schottky type of conduction is predominant in the high field region and the Schottky barrier height has been determined. The Hall coefficient, Hall mobility and carrier concentration are also discussed.     

Studies on electrical properties of ( x ) BaTiO3?+?(1? x ) Ni0.92Co0.03Mn0.05Fe2O4 ME composites

The (1−x) Ni_0.92Co_0.03Mn_0.05Fe₂O₄ + (x) BaTiO₃ magnetoelectric (ME) composite have been prepared using conventional double sintering ceramic process where x varies as 1.00, 0.85, 0.70, 0.55 and 0.00. The presence of both phases has been confirmed by X-ray diffraction and the microstructure study will be carried out by SEM technique. The dc resistivity and thermo-emf of the samples have been studied with variation in temperature. The variation of dielectric constant (έ) and loss tangent (tan δ) will be measured in the frequency range 100 Hz–1 MHz. The ac conductivity has been derived from dielectric constant (έ) and loss tangent (tan δ). The static value of magnetoelectric conversion factor dc (ME)_H has been studied as a function of intensity of magnetic field.     

Electrical properties and scaling behaviour of Sm<Superscript>3 + </Superscript> doped CaF<Subscript>2</Subscript>-bismuth borate glasses

The electrical properties for 20Bi₂O₃–60B₂O₃ (20−x)–CaF₂–xSm₂O₃ glasses (0 ≤ x ≤ 2) were measured in the temperature range 297 K up to 629 K and in the frequency range 0·1–100 kHz. The d.c. and a.c. conductivity values and the dielectric loss (tan δ) values were found to increase with increasing Sm₂O₃ content, whereas the activation energy of conductivities and the dielectric constant decreased. These results were attributed to the introduction of the rare earth ions; promote the formation of a high number of non-bridging oxygen atoms, which facilitate the mobility of charge carriers. The frequency dependence of the a.c. conductivity follows the power law σ _ac(ω) = Aω ^s . The frequency exponent (s) values (0·64 < s < 0·8) decrease with increasing temperature. This suggested that the a.c. conduction mechanism follows the correlated barrier hopping model (CBH). The dielectric constant (ε ^′) and dielectric loss (tan δ values) were found to increase with increasing temperature and increasing Sm₂O₃ concentration in the glass. The a.c. conductivities as a function of frequency at different temperatures of a given glass superimposed onto a master curve (Roling scaling model). Furthermore, we have performed to scale the data as a function of composition. Two master curves were obtained, which suggested that there are differences in dominant charge carriers between glasses having Sm₂O₃ concentration ≥1 and glass of Sm₂O₃ concentration <1.     

Influence of Bi substitution on microwave dielectric properties of BaO–La<Subscript>2</Subscript>O<Subscript>3</Subscript>–Sm<Subscript>2</Subscript>O<Subscript>3</Subscript>–TiO<Subscript>2</Subscript> ceramics

The influences of Bi substitution on microwave dielectric properties of Ba₄(La_0.5Sm_0.5)_9.33Ti₁₈O₅₄ solid solutions were investigated. Dielectric ceramics with general formula Ba₄(La_(0.5−z)Sm_0.5Bi _z )_9.33Ti₁₈O₅₄, z = 0.0–0.2 were prepared by conventional solid state route. The structural analysis of all the samples was carried out by X-ray diffraction and scanning electron microscopy. The dielectric properties were investigated as a function of Bi contents using open-ended coaxial probe method in the frequency range 0.3–3.0 GHz at room temperature. Dielectric constant varies from 83 to 88 and loss tangent from 2.1 × 10⁻³ to 5.5 × 10⁻³ at 3 GHz with temperature coefficient of resonant frequency changing from 106.7 to −8.4 ppm/oC as Bi contents increases from z = 0.00–0.20. It has been found that dielectric constant and temperature coefficient of resonant frequency improve whereas loss tangent is adversely affected with increase in Bi substitution.     

Investigating the vibration damping behavior of barium titanate (BaTiO<Subscript>3</Subscript>) ceramics for use as a high damping reinforcement in metal matrix composites

We have examined factors that affect the vibration damping behavior of the ferroelectric ceramic barium titanate (BaTiO₃) by measuring its low frequency (0.1–10 Hz) damping loss coefficient (tan δ) using dynamic mechanical analysis. In monolithic BaTiO₃, tan δ was found to increase with temperature up its Curie temperature (T _C), beyond which the damping capability exhibited a sharp drop. The abrupt drop as temperatures increase beyond T _C has been attributed to the disappearance of ferroelastic domains as the crystallographic structure of BaTiO₃ transforms from tetragonal to cubic. At temperatures below T _C, the damping coefficient is further shown to increase with decreasing frequency of the imposed vibration, and in microstructures with a high degree of tetragonality and large domain densities. Data further indicate that tan δ values tend to decrease with the number of cycles that are imposed; however, initial values can be restored if the material is allowed to age following loading.     

Composition dependence of electrical properties of ZnF2-MO-TeO2 glasses

Dielectric constant (ε′), loss (tan δ), a.c. conductivity (σ) of ZnF₂-MO-TeO₂ glasses with varying concentrations of MO (P₂O₅, As₂O₃ and Bi₂O₃) were measured as a function of frequency and temperature over moderately wide ranges. From the analysis of these studies along with IR spectra and DTA results of these glasses, the structural changes in the systems with the concentration of metal oxides are discussed.     

Effect of La substitution on structural and electrical properties of Ba(Fe<Subscript>2/3</Subscript>W<Subscript>1/3</Subscript>)O<Subscript>3</Subscript> nanoceramics

The nanocrystalline fine powders (∼80 nm) of (Ba_1−x La _x )(Fe_2/3W_1/3)_1−x/4O₃, (BLFW) (x = 0.0, 0.05, 0.10 and 0.15) were synthesized with a combined mechanical activation and conventional high-temperature solid-state reaction methods. Preliminary X-ray structural analysis of pellet samples (prepared from fine powders) showed formation of a single-phase tetragonal system. Detailed studies of dielectric properties (ε_r and tan δ) exhibit that these parameters are strongly dependent on frequency, temperature and La composition. The La-substitution increases the dielectric constant and decreases the tan δ up to 10% substitutions of La at the Ba-site, and then reversed the variation, and hence this composition is considered as a critical composition. This observation was found valid for structure, microstructures, dielectric constant, electrical conductivity, J–E characteristics and impedance parameters also. Like in other perovskites (PZT, BZT), La substitution plays an important role in tailoring the properties of Ba(Fe_2/3W_1/3)O₃ ceramics.     

Study of the structural and dielectric properties of Bi<Subscript>2</Subscript>O<Subscript>3</Subscript> and PbO addition on BiNbO<Subscript>4</Subscript> ceramic matrix for RF applications

In this paper, the structural and dielectric properties of BNO (BiNbO₄) was investigated as a function of the external RF frequency and temperature. The BNO Ceramics, prepared by the conventional mixed oxide method and doped with 3, 5 and 10 wt. % Bi₂O₃–PbO were sintered at 1,025 °C for 3 h. The X-ray diffraction patterns of the samples sintered, shown the presence of the triclinic phase (β-BNO). In the measurements obtained at room temperature (25 °C) was observed that the largest values of dielectric permittivity (ε′ _r ) at frequency 100 kHz, were for the samples: BNO5Bi (5 wt. % Bi₂O₃) and BNO5Pb (5 wt. % PbO) with values ε′ _r ~ 59.54 and ε′ _r ~ 78.44, respectively. The smaller values of loss tangent (tan δ) were for the samples: BNO5Bi and BNO3Pb (3 wt. % PbO) with values tan δ ~ 5.71 × 10⁻⁴ and tan δ ~ 2.19 × 10⁻⁴, respectively at frequency 33.69 MHz. The analysis as a function of temperature of the dielectric properties of the samples, obtained at frequency 100 kHz, showed that the larger value of the relative dielectric permittivity was about ε′ _r ~ 76.4 at temperature 200 °C for BNO5Pb sample, and the value smaller observed of dielectric loss was for BNO3Bi sample at temperature 80 °C, with about tan δ ~ 5.4 × 10⁻³. The Temperature Coefficient of Capacitance (TCC) values at 1 MHz frequency, present a change of the signal from BNO (−55.06 ppm/°C) to the sample doped of Bi: BNO3Bi (+86.74 ppm/°C) and to the sample doped of Pb: BNO3Pb (+208.87 ppm/°C). One can conclude that starting from the BNO one can increase the doping level of Bi or Pb and find a concentration where one have TCC = 0 ppm/°C, which is important for temperature stable materials applications like high frequency capacitors. The activation energy (H) obtained in the process is approximately 0.55 eV for BNO sample and increase with the doping level. These samples will be studied seeking the development ceramic capacitors for applications in radio frequency devices.     

Dielectric properties of LiF-B2O3 glasses doped with certain rare earth ions

Dielectric constantɛ, loss tanδ and a.c. conductivityσ of LiF-B₂O₃: Ln³⁺ (where Ln=Ce, Pr, Nd and Tb) glasses are studied as functions of frequency (in the range 10²–10⁶ Hz) and temperature (range 30–200°C). The dielectric breakdown strength of these glasses was also determined at room temperature in an air medium. The rate of increase ofɛ and tanδ with temperature decreases with decrease in the ionic radius of RE³⁺ ion whereas the dielectric breakdown strength, the activation energy for a.c. conduction in the high temperature region decreases with increase in the ionic radius of RE³⁺ ion. An attempt has been made to explain the a.c. conduction in these glasses on the basis of quantum mechanical tunnelling (QMT) model.     

Dielectric properties of SrTiO3 single crystals subjected to high electric fields and later irradiated with X-rays orγ-rays

The dielectric constant (K), loss (tanδ), and hence conductivity (σ) of SrTiO₃ single crystals have been measured in the frequency region 10²–10⁷ Hz and in the temperature range 30°–350° C. Quenching, subjecting the crystals to high electric fields (a.c. or d.c.) and X-ray orγ-ray irradiation, or a combination of these treatments, is found to bring about interesting changes in these properties. An attempt is made to understand the results.     

Dielectric properties of carbon black: SBR composites

A series of styrene–butadiene rubber (SBR) composites have been prepared with different weight ratios of polyacetylene based conducting carbon black (CCB) (0–90 phr). The SBR–CCB systems are characterized for dimensional stability which is enhanced by increasing the CCB loading because of enhancement in polymer-filler interaction. The electrical properties such as dielectric constant (ε_r), dissipation factor (tan δ) and dielectric loss (ε″) of the composites have been studied. The influence of different loading of CCB (0–90 phr), frequency of ac (100 Hz–30 MHz) and temperature (25–75 °C) on the electrical properties was studied. An increase in dielectric constant and tan δ of the SBR composites was observed with increase in CCB content and ac frequency. This is due to enhancement of filler–filler interaction and the increase in continuity of conducting phase. The surface morphology has been studied using scanning electron microscopy (SEM).     

Preparation and characterization of cordierite filled PTFE laminates for microwave substrate applications

Phase pure cordierite (2MgO · 2Al₂O₃ · 5SiO₂) powder was prepared through solid state ceramic route. Silane coated cordierite powder was filled in the PTFE matrix through SMECH process comprising of sigma mixing, extrusion, calendering, followed by hot pressing, to fabricate flexible microwave substrates. Filling fraction of cordierite in the PTFE matrix was varied from 10 to 70 wt% and its effects on density, dielectric properties, coefficient of thermal expansion and water absorption were investigated. The morphology and filler distribution of the filled composite were studied by SEM. Waveguide cavity perturbation technique was employed to measure the dielectric properties of the composites at X-band (8.2–12.4 GHz). Dielectric constant and loss tangent were found increasing with filler loading from 10 wt% (ε _r′ = 2.17, tan δ = 0.0007) to 60 wt% (ε _r′ = 3.17, tan δ = 0.0034).     

Impact of metal filler on the dielectric properties of Nylon 11

Dielectric measurements of pure Nylon 11 in comparison with metal (Zn) filled Nylon 11 have been carried out using an impendence analyzer in the frequency range of 10²–10⁷ Hz and temperature range 20–120 °C. Two different concentrations (1% and 5% (w/w)) of metal (Zn) fillers were used. It was observed that at low frequencies and particularly at high temperature dielectric permittivity (ε′) for 1% Zn filled sample is more than that of pure Nylon 11 whereas ε′ for 5% Zn filler is less as compared to that for pure Nylon 11. But at very high frequencies dielectric permittivity (ε′) for pure Nylon 11 is less than Zn filled samples. Also it is found that for all frequencies and particularly at high temperature ε′′ as well as tan δ are maximum for pure Nylon 11 and decrease for filled Nylon 11 samples. The Cole–Cole arcs have also been plotted for these samples. Using these plots the static and instantaneous values of dielectric permittivity and orientation polarization parameter ‘S’ have been calculated.