980 nm compact optical isolators using Cd1-x-yMnxHgyTe single crystals for high power pumping laserdiodes

The author have developed compact optical isolators operating at 480 nm wavelength with an insertion loss of 1.0 dB, isolation of 30 dB, size of 4φ×4.5 mm and endurance against laser power of ~500 mW using Cd_1-x-yMn_xHg_yTe single crystals for the first time     

Monolithic Integration of a Waveguide Optical Isolator With a Distributed Feedback Laser Diode in the 1.5- μm Wavelength Range

We present first monolithic integration of a waveguide optical isolator with a distributed feedback laser diode (DFB LD) in the 1.5-mum wavelength range. The integrated devices are composed of 0.25-mm-long index-coupled DFB LDs and 0.75-mm-long semiconductor active waveguide optical isolators. The semiconductor active waveguide optical isolators are based on the nonreciprocal loss in the semiconductor optical amplifier (SOA) waveguides with ferromagnetic metals (Fe). The fabrication process consists of two steps of metal-organic vapor phase epitaxy to grow the DFB LD/SOA layer structures, one dry-etching process for the waveguide stripe formation, and three steps of electron-beam evaporation for the electrodes and ferromagnetic metals deposition. They showed single-mode emission at 1543.8nm and 4-dB optical isolation under a magnetic field of 0.1 T.     

Semiconductor Waveguide Optical Isolators Towards Larger Optical Isolation Utilizing Nonreciprocal Phase Shift by Ferromagnetic Co

We theoretically investigated optical isolation in Co–InGaAsP semiconductor active waveguide optical isolators based on a nonreciprocal phase shift. By appropriate design of the waveguide layer structure and ferromagnetic metal, a large alpha parameter can be obtained, and the optical isolation was estimated to be larger than 30 dB in Mach–Zehnder interferometric waveguide optical isolators. The length of the nonreciprocal phase shifting region is as short as 1.3 mm.      

Silica-based 8×8 optical matrix switch integrating newswitching units with large fabrication tolerance

An 8×8 optical matrix switch consisting of asymmetric Mach-Zehnder (MZ) interferometer switching units with a waveguide intersection was fabricated using silica-based planar lightwave circuits (PLC's) on a silicon substrate. This switching unit can realize a high extinction ratio and a wide operation wavelength range even if the coupling ratios of the directional couplers (DC's) consisting the switching unit, deviate greatly from the ideal value of 50%. A matrix switch with a DC-coupling ratio of 30% was fabricated to test the validity of the proposed geometry. The average insertion loss was 7.3 dB in the transverse electric (TE) mode and 7.5 dB in the transverse magnetic (TM) mode. The average extinction ratio was 31.2 dB in the TE mode and 31.3 dB in the TM mode. The wavelength range with an extinction ratio greater than 20 dB was over 100 nm     

A novel processing technique to fabricate planar InGaAsP/InP electroabsorption waveguide modulators

A novel processing technique has been developed to fabricate planar electroabsorption waveguide modulators in compound semiconductor heterostructures. The lateral confinement of light is achieved by introducing controllable, reproducible, and stable stresses into semiconductor heterostructures using WNi surface stressor stripes, which also serve as electrodes for the waveguide modulators. Self-aligned helium implantation is employed to achieve electrical isolation using the Stressors as the templates for the ion masks. An increase as large as 33000 times has been obtained in the dc resistance between the neighboring waveguide modulators 25 μm apart. Propagation loss of 1.7 dB/cm is observed in the photoelastic waveguides at a wavelength of 1.53 μm following the He implantation. A post-implant thermal annealing at 310°C for 40 min increases the dc resistance between the neighboring devices to the maximum value, and at the same time reduces the optical loss to its value before ion implantation (less than 1 dB/cm). Using a combination of the photoelastic effect and helium implantation, planar InGaAsP/InP Franz-Keldysh-effect waveguide modulators 430 μm long with a 10 dB extinction ratio at 3 V for the TM mode have been fabricated. Planar electroabsorption quantum-confined Stark effect waveguide modulators have also been demonstrated. This planar device processing technique may prove valuable in future photonic integrated circuit technology.     

基于Bragg光栅的超高消光比SOI波导偏振器设计

波导偏振器是片上集成相干光学系统中的关键器件之一,超高消光比、低损耗、紧凑型波导偏振器的设计一直是研究的热点。基于绝缘体上硅平台的倾斜Bragg光栅被用于实现超高消光比波导偏振器结构。利用一维光子晶体能带理论分别计算TE和TM模式光的能带结构分布,选择TE模式禁带与TM导带重叠带隙设计光栅,可实现TM模式低损传输,而TE模式被Bragg光栅高效反射,从而产生超高偏振消光比。3D FDTD仿真表明:16 μm倾斜Bragg光栅波导偏振器可在中心波长1550 nm附近70 nm的带宽内,实现大于37 dB的超高消光比,器件的损耗小于0.64 dB;进一步增加光栅周期数,当长度为25 μm时,消光比可提高至46 dB。Bragg光栅倾斜角与刻蚀宽度偏差仿真表明:设计的结构加工误差容限较大,同时该结构仅需一次曝光刻蚀,工艺流程简单。     

Four-channel integrated-optic wavelength demultiplexer with weakpolarization dependence

A planar four-channel wavelength demultiplexer with weak polarization dependence is proposed and demonstrated. This demultiplexer is based on an optical-phased array. An experimental device with dimensions 4.5×3.2 mm² was designed and fabricated, using conventional (high-quality) optical lithography. The demultiplexer operates in the wavelength range 776.5-781.2 nm, with a channel spacing of 1.55 nm. Insertion loss was 0.6 dB for the central channels and 1.2 dB for the outer channels for transverse-electric (TE) polarization, excluding 1.3-dB waveguide propagation loss. Crosstalk values measured 15.4-29.7 dB for the TE and 13.4-22.2 dB for the transverse-magnetic (TM) polarization     

激光直写技术制备SiO2-TiO2条形光波导工艺研究

为了研究激光直写技术在光波导制备中的应用,采用波长为1.07μm的连续光纤激光器制备了硅基SiO2-TiO2条形光波导。探讨了激光直写技术制备条形光波导的原理,研究了激光参数对条形光波导宽度的影响,最后测试了光波导的通光模场以及光传输损耗。结果表明,条形光波导的宽度随着激光功率密度的增加而增大。当激光扫描速率在0.1mm/s~1mm/s范围内变化时,条形光波导的宽度随着激光扫描速率的增加而降低;高于1mm/s时对波导宽度无明显影响。在优化的工艺参数下,激光直写得到的条形波导的厚度约为0.4μm,宽度为120μm,整条波导非常均匀、准直性很好,对于1550nm波长的光呈多模传输,最小传输损耗为1.7dB/cm。     

Angled-Facet Spot-Size-Converter Integrated Semiconductor Optical Amplifiers Using Asymmetric Twin Waveguide Technology

The extinction ratio (defined as the difference in the optical power between 0-dB fiber-to-fiber loss and the off state level) is enhanced with the introduction of an S-bend waveguide structure using asymmetric twin waveguide techniques for a spot-size converter integrated semiconductor optical amplifier (SSC-SOA) with a polarization-insensitive offset superlattice. Angled waveguides are introduced in order to obtain low facet reflectivity without the need for antireflection coating. A curved waveguide is introduced to connect the angled and straight waveguide, minimizing their coupling loss while achieving a lateral spatial mode filter. The SSC-SOA, operating at 1.62-mum wavelength, achieves an extinction ratio up to 70 dB and a fiber-to-fiber gain of 10 dB using cleaved, flat end single-mode optical fibers.     

Waveguide polarizer based on resonant tunneling

A novel and highly efficient waveguide polarizer which is based on the phenomenon of resonant tunneling is proposed. Designs for both transverse-electric (TE) and transverse-magnetic (TM) pass polarizers based on this principle are suggested, and it is shown that with such a device it is possible to achieve TM mode loss greater than 80 dB/mm and TE mode loss less than 0.5 dB/mm for the TE pass polarizer, and TE mode loss of 24 dB/mm with a TM mode loss less than 0.8 dB/mm for the TM pass polarizer     

Buried optical waveguide polarizer by titanium indiffusion andproton-exchange in LiNbO3

Buried optical waveguide polarizers on LiNbO₃ have been realized by titanium indiffusion, followed by proton-exchange and annealing. The proton-exchange process decreases the ordinary refractive index and so modifies the index profile of the titanium indiffused waveguide. The measured intensity profile is in good agreement with calculation. An aluminum film absorbs the surface TM mode on z-cut LiNbO₃, leaving a buried nearly symmetric TE mode with lower optical loss than surface-guided TE modes. The extinction ratio obtained is estimated to be greater than 50 dB/cm at 0.633 μm     

A hybrid integrated waveguide isolator on a silica-based planarlightwave circuit

La and Ga substituted yttrium iron garnet single-mode buried channel waveguides, prepared using liquid-phase-epitaxial growth and Ar ion beam etching, have been successfully applied as 45° nonreciprocal waveguide rotators (NRWR) for hybrid integrated waveguide isolators at λ=1.55 μm. The optical and magneto-optical properties of the prepared 45° NRWRs and the epitaxial films are investigated in detail. We describe the assembly procedure and present optical measurement results for the hybrid integrated waveguide isolators. The hybrid isolators are composed of a 45° NRWR, a half-wave plate sheet, thin film-type polarizers, a thin plate-type permanent magnet and a silica-based waveguide on a silicon substrate. We obtained good waveguide isolators with low insertion losses (<3.2 dB) and high isolation (>25 dB) in the 1.5 μm wavelength band     

Fabrication and Evaluation of Nano-Scale Optical Circuits Using Sol-Gel Materials With Photo-Induced Refractive Index Variation Characteristics

Nano-scale optical circuits with core thickness of ~ 230 nm and core width of ~ 1 mum were fabricated and evaluated, using the photo-induced refractive index variation sol-gel materials, whose refractive index gradually increases by UV light exposure and baking. Propagation loss of linear waveguides was 1.86 dB/cm for TE mode and 1.89 dB/cm for TM mode at 633 nm in wavelength, indicating that there were small polarization dependences of ~ 0.03 dB/cm. Spot sizes of guided beams along core width direction and along core thickness direction were, respectively, 0.6 and 0.3 mu m for both TE mode and TM mode. Bending loss of S-bending waveguides was reduced from 0.44 to 0.24 dB for TE mode with increasing the bending curvature radius from 5 to 60 mu m. Although the bending loss for TM mode was slightly higher than that for TE mode, the difference was less than 10%. Branching loss of Y-branching waveguides was reduced from 1.33 to 0.08 dB for TE mode, and from 1.34 to 0.12 dB for TM mode with decreasing the branching angle from 80deg to 20deg. From these results, it is concluded that the photo-induced refractive index variation sol-gel materials can realize miniaturized optical circuits with sizes of several tens of microns and guided beam confinement within a cross section area less than 1.0 mum² with small polarization dependences, indicating potential applications to intra-chip optical interconnects.     

Design of a single-mode tapered waveguide for low-losschip-to-fiber coupling

The novel waveguide structures described in this paper have nonlinearly tapered shapes that result in low radiation losses despite their relatively short lengths. The core at the waveguide endface connected with the fiber has a very small cross section and an expanded mode field with a non-Gaussian shape. The taper structures are analyzed by using an improved step-transition method. This method is a based on the theory of enclosing a waveguide within electrical walls and that can therefore treat the radiation modes in a tapered waveguide as discrete mode spectra. Analyzing the relationships between the lengths and shapes of the tapers and the radiation loss due to the tapers show that appropriately tapered semiconductor waveguides operating at an optical wavelength of 1.55 μm and having a taper length of less than 0.7 mm can have a radiation loss of only 0.1 dB and a coupling loss with a conventional single-mode fiber of less than 0.5 dB     

Incoupling waveguide hologram with reduced polarization sensitivity

An incoupling waveguide hologram (IWGH) with significantly reduced polarization sensitivity was designed and fabricated in InP for 1550 nm wavelength. The IWGH couples the light from an optical fiber, irrespectively of the state of polarization, into the InP waveguide and simultaneously focuses it to a desired position in the waveguide. Conventional IWGHs are strongly polarization sensitive with a measured 19 dB difference in the incoupling efficiency between the TE and TM mode. In contrast, although some design parameters turned out to be slightly in error, the fabricated IWGHs designed for reduced polarization sensitivity exhibited a 3.1 dB difference in the incoupling efficiency between the TE and TM modes     

Fabrication and characterization of annealed proton exchanged long period waveguide grating in x-cut LiNbO3

In this paper, a long-period waveguide grating was fabricated in x-cut lithium niobate substrate by patterned annealed proton exchange waveguide fabrication process. The waveguide mode characteristic was evaluated using a charge-coupled device (CCD) camera. It shows that the waveguide is single mode transmission at a wavelength of 1 550 nm. The transmission spectra of the long period waveguide gratings were measured by optical spectrum analyzer (OSA) and show an extinction ratio of ~17 dB and a 3 dB bandwidth of ~10 nm at the resonant wavelength. The resonant wavelength moves toward to the long wavelength direction as the waveguide width-difference increases in the same period, and also shifts toward to the long wavelength direction with the increase of the period in the case of the same waveguide width-difference. The method of fabricating a long period waveguide grating based on a patterned annealed proton exchange technique simplifies the fabrication process, and at the same time, reduces the fabrication cost.     

Polarization-independent and ultra-high bandwidth electroabsorption modulator in multiquantum-well deep-ridge waveguide technology

Electroabsorption modulators with polarization-independence of transmission (TE/TM sensitivity <0.4 dB at 1550 nm) over a wide wavelength range from 1540-1560 nm have been realized using tensile-strained InGaAs and InGaAsP quantum wells. Both designs show 42-GHz modulation bandwidth with a high bandwidth-to-drive-voltage ratio of >23 GHz/V. Polarization insensitivity of modulator transmission and chirp is demonstrated. Technical realization has been done in ridge waveguide technology with low-pressure MOVPE, reactive ion etching (RIE) for semiconductor etching and polyimide for planarization.     

光子晶体粗波分-模分混合复用/解复用器

提出了一种基于光子晶体的粗波分-模分混合复用/解复用器,可在光子晶体上实现波分-模分的一体集成.根据时域耦合模理论,该器件采用点缺陷微腔和波长选择反射微腔的结构实现滤波.根据横向耦合模理论,利用非对称平行波导的结构实现模式转换.应用时域有限差分法对其性能进行分析,仿真结果表明,该器件可以实现1 550nm TE0模、1 570 nm TE0模、1 550 nm TE1模和1 570 nm TE1模四个信道信号的复用和解复用,且具有较低的插入损耗(0.23 d B)和信道串扰(-15.21 d B),该器件在CWDM-MDM中有重要作用,对提升城域网的容量具有重要价值.     

基于宽度调制谐振腔的光子晶体电光调制器

针对目前电光调制器插入损耗高的问题,提出了一种基于宽度调制(WM)型谐振腔的光子晶体电光调制器.该器件由输入端纳米线波导、硅基光子晶体波导和WM型谐振腔组成,前二者的连接处采用锥形结构,用于减少2种波导之间的级联损耗.根据时域耦合模理论与等离子体色散效应,采用WM型谐振腔和PN掺杂结构实现对横电(TE)模的调制,并应用...     

Integrated optical waveguide polarizer on glass with a birefringentpolymer overlay

An integrated optical waveguide polarizer on glass is described. It is based on a filtering zone propagating only TE mode whereas the TM mode leaks out into a birefringent polymer simply deposited on the glass. The polymer is poled by a corona process. The measured polarization extinction ratio between TE and TM modes is better than 39 dB and the excess loss due to the filtering zone is less than 4 dB. The total loss is in the order of 7 dB