Tribological properties of Ta‐C‐N and Ta‐N thin films

The amorphous Ta‐C‐N and Ta‐N thin films were deposited using magnetron sputtering on silicon wafer under the similar condition. The as‐prepared thin films were characterized using scanning electron microscope (SEM), optical profiling system, nano‐indentation and friction test instruments. The results show that, compared with the Ta‐N thin film, the Ta‐C‐N thin film has higher nano‐hardness (9.45 GPa) and elastic modulus (225.71 GPa). Furthermore, the lower friction coefficient and wear rate of the Ta‐C‐N thin film are 0.238 and 5.94×10^–6 mm^–3· N^–1·m^–1, respectively. The wear surface of Ta‐C‐N thin film is smoother than that of the Ta‐N thin film. Therefore, it shows better anti‐wear properties.     

Interfacial adhesion of polymeric adhesive film on different surfaces in the fabrication of polymer photonic devices

One main critical issue in the fabrication of polymer optical devices is the adhesion strength of polymeric layer to the substrate. High adhesion strength is desirable and critical in order to avoid peeling out of polymeric layer from the substrate due to stress generated during fabrication, handling and lifetime. Therefore, the aim of this study is to investigate the interfacial adhesion of polymeric adhesive film on different possible substrate surfaces such as pure silicon wafer, silica on silicon wafer, and thin metal layer (Chromium–Cr) on silicon wafer under different processing conditions. Surface morphology of the substrates before deposition was characterized by atomic force microscope (AFM). Adhesive shear button was made on those substrates by using photolithography process and the interfacial adhesion was measured by using a Dage D2400 shear tester. The effect of exposing in high temperature and typical damp heat condition on the interfacial adhesion was also studied. We found that the best adhesion performance was obtained for the case using Cr thin in all processing conditions, especially under heat treatment and damp heat test. From this study, we suggest that a thin layer of metal film on silicon wafer can be use to improve the adhesion and the reliability of the polymer photonic devices. The oxidized silica on silicon wafer is an alternative choice at the expense of reducing adhesion performance. Moreover, using silica layer has the advantage over Cr layer that one fabrication step can be reduced since the silica layer itself can effectively act as the lower cladding of the devices.     

Ultrafast laser-induced microstructure/nanostructure replication and optical properties

This paper demonstrates replication of ultrafast laser-induced micro/nano surface textures on poly(dimethylsiloxane) (PDMS). The surface texture replication process reduces the processing steps for microtexturing while improving light trapping. Two methods are demonstrated to replicate surface microtexture, a simple mold method and an embossing method. The laser microtextured silicon and titanium surfaces with micro to nanoscale features have been successfully replicated. Optical characterization of the replicated microtextured PDMS surfaces is performed and the results agree with model predictions. The replicated microtextured PDMS film is applied on a silicon surface and optical characterization shows that surface reflectance can be suppressed over 55% compared to the control value.     

Effect of spatial confinement on the glass-transition temperature of patterned polymer nanostructures

Poly(methyl methacrylate) (PMMA) nanostructures embedded with a fluorescence tag are fabricated using electron beam lithography on oxidized silicon substrates. The glass transition temperatures (Tgs) of these one-dimensional (1-D) nanostructures (parallel lines) are measured by monitoring their temperature-dependent fluorescence intensities, revealing substantial differences between the Tgs of the nanostructures and the thin films from which they were fabricated. For example, the Tg of 50-nm-wide PMMA nanolines on silica is approximately 15 K lower than that of a PMMA film on silica of the same 18 nm thickness. Attractive PMMA-silica interfacial interactions increase the Tg, while free surfaces decrease the Tg of PMMA in ultrathin films relative to bulk PMMA. Thus, the significant differences between the Tgs of the 1-D and two-dimensional (2-D) forms of PMMA on silica are the result of a substantial increase in the ratio of free-surface area to interfacial area in the PMMA nanolines relative to ultrathin films.     

The effect of temperature on the nanoscale adhesion and friction behaviors of thermoplastic polymer films

Adhesion and friction tests were carried out in order to investigate the effect of temperature on the tribological characteristics of poly(methylmethacrylate) (PMMA) film using AFM. The pull-off and friction forces on the PMMA film were measured under a high vacuum condition (below 1 × 10(-4)?Pa) as the temperature of the PMMA film was increased from 300 to 420?K (heating) and decreased to 300?K (cooling). Friction tests were also conducted in both high vacuum and air conditions at room temperature. When the temperature was 420?K, which is 25?K higher than the glass-transition temperature (T(g)) of PMMA, the PMMA film surface became deformable. Subsequently, the pull-off force increased in proportion to the maximum applied load during the pull-off force measurement. In contrast, when the temperature was under 395?K, the pull-off force did not depend on the maximum applied load. The friction force began to increase when the temperature rose above 370?K, which is 25?K lower than the T(g) of PMMA, and rapidly increased at 420?K. Decrease of the PMMA film stiffness and plastic deformation of the PMMA film were observed at 420?K in force-displacement curves. After the heating to 420?K, the coefficient of friction was measured under air condition at room temperature and was found to be lower than that measured before the heating. Additionally, the RMS roughness increased as a result of heating.     

Fabrication of poly(methyl methacrylate) microfluidic chips by atmospheric molding

A greatly simplified method for fabricating poly(methyl methacrylate) (PMMA) separation microchips is introduced. The new protocol relies on UV-initiated polymerization of the monomer solution in an open mold under ambient pressure. Silicon microstructures are transferred to the polymer substrate by molding a methyl methacrylate solution in a sandwich (silicon master/Teflon spacer/glass plate) mold. The chips are subsequently assembled by thermal sealing of the channel and cover plates. The new fabrication method obviates the need for specialized replication equipment and reduces the complexity of prototyping and manufacturing. Variables of the fabrication process were assessed and optimized. The new method compares favorably with common fabrication techniques, yielding high-quality devices with well-defined channel and injection-cross structures, and highly smoothed surfaces. Nearly 100 PMMA chips were replicated using a single silicon master, with high chip-to-chip reproducibility (relative standard deviations of 1.5 and 4.7% for the widths and depths of the replicated channels, respectively). The relatively high EOF value of the new chips (2.12 x 10(-4) cm(2) x V(-1) x s(-1)) indicates that the UV polymerization process increases the surface charge and hence enhances the fluidic transport. The attractive performance of the new CE microchips has been demonstrated in connection with end-column amperometric and contactless-conductivity detection schemes. While the new approach is demonstrated in connection with PMMA microchips, it could be applied to other materials that undergo light-initiated polymerization. The new approach brings significant simplification of the process of fabricating PMMA devices and should lead to a widespread low-cost production of high-quality separation microchips.     

Residual stress in piezoelectric poly(vinylidene-fluoride-co-trifluoroethylene) thin films deposited on silicon substrates

The residual stress and its evolution with time in poly(vinylidene-fluoride-co-trifluoroethylene) (P(VDF-TrFE) (72/28)) piezoelectric polymer thin films deposited on silicon wafers were investigated using the wafer curvature method. Double-side polished silicon wafers with minimized initial wafer warpage were used to replace single-side polished silicon wafers to obtain significantly improved reliability for the measurement of the low residual stress in the P(VDF-TrFE) polymer thin films. Our measurement results showed that all the P(VDF-TrFE) films possessed a tensile residual stress, and the residual stress slowly decreased with time. Our analysis further indicates that the tensile stress could arise from the thermal mismatch between the P(VDF-TrFE) film and the silicon substrate. Besides possible viscoelastic creep mechanism in thermoplastic P(VDF-TrFE) films, microcracks with widths in the range of tens of nanometers appeared to release the tensile residual stress.     

Microfiber-directed boundary flow in press-fit microdevices fabricated from self-adhesive hydrophobic surfaces

We report a rapid microfluidic device construction technique which does not employ lithography or stamping methods. Device assembly physically combines a silicon wafer, an elastomer (poly(dimethylsiloxane) (PDMS)), and microfibers to form patterns of hydrophobic channels, wells, elbows, or orifices that direct fluid flow into controlled boundary layers. Tweezers are used to place glass microfibers in a defined pattern onto an elastomeric (PDMS) hydrophobic film. The film is then manually pressed onto a hydrophobic silicon wafer, causing it to adhere to the silicon wafer and form a liquid-tight seal around the fibers. Completed in 15 min, the technique results in an operable microdevice with micrometer-scale features of nanoliter volume. Microfiber-directed boundary flow is achieved by use of the surface wetting properties of the hydrophilic glass fiber and the hydrophobicity of surrounding surfaces. The simplicity of this technique allows quick prototyping of microfluidic components, as well as complete biosensor systems, such as we describe for the detection of pathogenic bacteria.     

Optische und mechanische Eigenschaften von RLVIP HfO2‐Schichten

Optical and mechanical properties of RLVIP HfO₂ films In this paper HfO₂‐films were deposited on unheated fused silica, borosilicate glass, and silicon wafer substrates by reactive low voltage ion plating (RLVIP). Optical film properties, i. e. refractive index and absorption as well as mechanical properties, particularly film stress, were investigated. Their dependence on deposition parameters, i. e. arc current and oxygen partial pressure was studied. The film refractive index was calculated from spectrophotometric measurements. The low absorption was determined by photothermal deflection spectrometry. Stress measurements were performed by bending disc method with uncoated and coated silicon wafer substrates.     

Deposition of BaTiO3 thin films by plasma MOCVD

Barium titanium trioxide (BaTiO₃) thin films were deposited on fused silica or silicon wafer substrate from barium dipivaloylmethanate (II) (Ba(dpm)₂) and titanium tetraisopropoxide (IV) (TTIP) used as precursors in an oxygen microwave plasma. The substrates were dielectrically heated and the substrate temperatures were around 900 K during the film deposition. The deposition was performed for 15 min and the deposits were identified as BaTiO₃ by means of X-ray diffraction, X-ray photoelectron spectroscopy, infrared spectroscopy, and ellipsometry. Oxygen and barium atoms and TiO and CO molecules were identified in the plasma. These species would produce higher deposition rates at lower substrate temperatures than those did in the usual thermal metalorganic chemical vapor deposition (MOCVD). The dielectric constant of the BaTiO₃ thin film that was directly deposited on the silicon wafer substrate was as low as 10¹ order of magnitude. Because the deposit reacted with the substrate and an interdiffusional layer was formed, the platinum layer was coated on the silicon wafer substrate in order to prevent the formation of an interdiffusional layer. The dielectric constant then increased to 10³ order of magnitude.     

金属等离子体浸没离子注入与沉积技术合成类金刚石薄膜研究

采用金属等离子体浸没离子注入与沉积技术在9Cr18轴承钢基体表面合成了类金刚石薄膜.研究了注入脉宽和工作气压对合成薄膜性能及化学组成的影响;通过激光Raman光谱、维氏硬度、针盘试验和电化学腐蚀等测试手段分别表征了合成薄膜后试样表面的化学组成和微观结构、显微硬度、摩擦磨损性能和抗腐蚀性能.结果表明:合成薄膜后,试样的显微硬度增大了88.7%,摩擦磨损和抗腐蚀性能也明显改善.     

Growth of a single-wall carbon nanotube film and its patterning as an n-type field effect transistor device using an integrated circuit compatible process

This study presents the synthesis of a dense single-wall carbon nanotube (SWNT) network on a silicon substrate using alcohol as the source gas. The nanosize catalysts required are made by the reduction of metal compounds in ethanol. The key point in spreading the nanoparticles on the substrate, so that the SWNT network can be grown over the entire wafer, is making the substrate surface hydrophilic. This SWNT network is so dense that it can be treated like a thin film. Methods of patterning this SWNT film with integrated circuit compatible processes are presented and discussed for the first time in the literature. Finally, fabrication and characteristic measurements of a field effect transistor (FET) using this SWNT film are also demonstrated. This FET is shown to have better electronic properties than any other kind of thin film transistor. This thin film with good electronic properties can be readily applied in the processing of many other SWNT electronic devices.     

Fabrication of highly ordered nanoscale poly (lactic acid) surface based on self-assembled silica microspheres

A simple process was developed to fabricate poly (lactic acid) (PLA) film possessing a highly ordered nanoscale surface. For the first step, an array of silica microspheres was prepared by self-assembly on a completely hydrophilic silicon wafer. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) images showed that a highly ordered array was formed, and then this array was used as the template for fabricating polymer film with highly ordered nanoscale surface. Next, a PLA solution was spin coated on the template. After solidifying, silica microspheres were embedded in the thin layer of PLA, maintaining their highly organized structures. Finally, silica microspheres were etched away by hydrofluoric acid, and only the PLA film with a close-packed hexagonally pattern structure was left on the silicon wafer substrate.     

Optical and structural characteristics of silicon nanoparticles thin film prepared by laser ablation

In this paper thin film of silicon nanoparticles on glass substrates have been prepared by dip-coating method using colloidal silicon nanoparticles generated by nanosecond laser ablation of silicon wafer in ethanol. The resulting nanoparticles and structural properties and morphology of thin film were characterized by UV-Visible absorption spectrometry, transmission electron microscopy, Fourier transform infrared spectroscopy, X-ray diffraction pattern and atomic force microscopy image. Nanoparticles with diameters ~ 9 nm were observed to be formed in the colloidal solution. The atomic force microscopy image of Si nanoparticles thin film shows that the overall average width is about 80 nm.     

Facile synthesis of thick films of poly(methyl methacrylate), poly(styrene), and poly(vinyl pyridine) from Au surfaces

Atom transfer radical polymerization (ATRP) is commonly used to grow polymer brushes from Au surfaces, but the resulting film thicknesses are usually significantly less than with ATRP from SiO(2) substrates. On Au, growth of poly(methyl methacrylate) (PMMA) blocks from poly(tert-butyl acrylate) brushes occurs more rapidly than growth of PMMA from initiator monolayers, suggesting that the disparity between growth rates from Au and SiO(2) stems from the Au surface. Radical quenching by electron transfer from Au is probably not the termination mechanism because polymerization from thin, cross-linked initiators gives film thicknesses that are essentially the same as the thicknesses of films grown from SiO(2) under the same polymerization conditions. However, this result is consistent with termination through desorption of thiols from noncross-linked films, and reaction of these thiols with growing polymer chains. The enhanced stability of cross-linked initiators allows ATRP at temperatures up to ～100 °C and enables the growth of thick films of PMMA (350 nm), polystyrene (120 nm) and poly(vinyl pyridine) (200 nm) from Au surfaces in 1 h. At temperatures >100 °C, the polymer brush layers delaminate as large area films.     

聚甲基丙烯酸甲酯掺杂剂对7,7,8,8-四氰基苯醌二甲烷薄膜特性的影响

采用旋涂法制备了7,7,8,8-四氰基苯醌二甲烷(TCNQ)及聚甲基丙烯酸甲酯(PMMA)掺杂后的TCNQ敏感薄膜,探讨了PMMA掺杂剂及不同转速对薄膜性能的影响.结果表明,TCNQ/PMMA复合薄膜中TCNQ颗粒变得更细小和均匀,但对NH3的响应不稳定;纯TCNQ薄膜对NH3具有相当高的灵敏度,但响应和恢复时间较长.     

Nanostructural depth-profile and field-effect properties of poly(alkoxyphenylene-thienylene) Langmuir-Schäfer thin-films

The correlations between morphological features and field-effect properties of poly(alkoxyphenylene-thiophene) thin Langmuir-Schäfer film deposited on differently terminated gate dielectric surfaces, namely bare and methyl functionalized thermal silicon dioxide (t-SiO₂), have been systematically studied. The film morphology has been investigated at different film thickness by Scanning Force Microscopy. Films thicker than a few layers show comparable morphology on both dielectric surfaces while differences are seen for the ultra-thin polymer deposit in close proximity to the substrate. Such deposit is notably more heterogeneous on bare t-SiO₂, while a more compact and uniform nanogranular structure is observed on the silylated t-SiO₂. As to the field-effect properties, the methyl-terminated gate dielectric surface leads to a two order of magnitude mobility enhancement along with a field-effect thickness independent conductance.     

Fabrication of nanostructure and formation of nanocrystal for non-volatile memory

In this work, we have demonstrated that the nanocrystal created by combining the self-assembled block copolymer thin film with regular semiconductor processing can be applicable to non-volatile memory device with increased charge storage capacity over planar structures. Self-assembled block copolymer thin film for nanostructures with critical dimensions below photolithographic resolution limits has been used during all experiments. Nanoporous thin film from PS-b-PMMA diblock copolymer thin film with selective removal of PMMA domains was used to fabricate nanostructure and nanocrystal. We have also reported about surface morphologies and electrical properties of the nano-needle structure formed by RIE technique. The details of nanoscale pattern of the very uniform arrays using RIE are presented. We fabricated different surface structure of nanoscale using block copolymer. We also deposited Si-rich SiNx layer using ICP-CVD on the silicon surface of nanostructure. The deposited films were studied after annealing. PL studies demonstrated nanocrystal in Si-rich SiNx film on nanostructure of silicon.     

水热法制备不同形貌的氧化锌纳米结构

采用水热法,用甲酰胺水溶液和锌片建立反应体系,在不同种晶层上制备出不同形貌的ZnO纳米结构,所用基底有Si片、镀有ZnO薄膜的Si片、镀有ITO薄膜的Si片、涂有ZnO粉末的Si片等,研究了不同的种晶层对ZnO纳米结构的形貌的影响。在不同温度下,分别在镀有ZnO薄膜和ITO薄膜的医用载玻片衬底上生长ZnO纳米结构,研究了温度在水热法中的作用及种晶层对纳米杆长度的影响。实验中用扫描电子显微镜（SEM）和X射线衍射仪（XRD）对纳米聚集体进行了表征。SEM表征结果表明不同种晶层上获得的ZnO纳米结构形貌差异很大;反应时间、甲酰胺水溶液浓度以及反应温度对ZnO纳米阵列形貌都有着一定的影响;在ZnO薄膜上生长的纳米杆较在ITO薄膜上生长的纳米杆长。SEM图像同时表明氧化锌纳米杆随着温度的增大,纳米杆的长度和杆径增大。X射线衍射峰在34.6℃有很强的（002）纤锌矿衍射峰,该峰表明衬底上有高度c轴取向的大面积纳米杆阵列和较好的结晶质量。     

Poly(vinyl acetate)/clay nanocomposite materials for organic thin film transistor application

Nanocomposite materials of poly(vinyl acetate) (PVAc) and organoclay were fabricated, in order to be utilized as dielectric materials of the organic thin film transistor (OTFT). Spin coating condition of the nanocomposite solution was examined considering shear viscosity of the composite materials dissolved in chloroform. Intercalated structure of the PVAc/clay nanocomposites was characterized using both wide-angle X-ray diffraction and TEM. Fracture morphology of the composite film on silicon wafer was also observed by SEM. Dielectric constant (4.15) of the nanocomposite materials shows that the PVAc/clay nanocomposites are applicable for the gate dielectric materials.