基于析因实验设计的QFN热可靠性分析

在微电子封装器件的生产或使用过程中,由于封装材料热膨胀系数不匹配,不同材料的交界处会产生热应力,热应力是导致微电子封装器件失效的主要原因之一。文章采用MSC．Marc有限元软件,分析了QFN器件在回流焊过程中的热应力、翘曲变形、主应力及剪应力,并由析因实验设计得到影响热应力的关键因素。研究表明：在回流焊过程中,QFN器件的最大热应力出现在芯片与粘结剂接触面的边角处;主应力和剪切应力的最大值也出现在芯片与粘结剂连接的角点处,其值分别为21．42MPa和-28．47MPa;由析因实验设计可知粘结剂厚度对QFN热应力的影响最大。     

基于析因实验设计的QFN热可靠性分析

在微电子封装器件的生产或使用过程中,由于封装材料热膨胀系数不匹配,不同材料的交界处会产生热应力．热应力是导致微电子封装器件失效的主要原因之一。采用MSC．Marc有限元软件．分析了QFN器件在回流焊过程中的热应力、翘曲变形、主应力及剪应力,并由析因实验设计得到影响热应力的关键因素。研究表明：在回流焊过程中,QFN器件的最大热应力出现在芯片与粘结剂接触面的边角处：主应力和剪切应力的最大值也出现在芯片与粘结剂连接的角点处．其值分别为21．42MPa和-28．47MPa：由析N实验设计可知粘结剂厚度对QFN热应力的影响最大。     

基于析因实验设计的QFN热可靠性分析

在微电子封装器件的生产或使用过程中,由于封装材料热膨胀系数不匹配,不同材料的交界处会产生热应力,热应力是导致微电子封装器件失效的主要原因之一。本文采用MSC．Marc有限元软件,分析了QFNN件在回流焊过程中的热应力、翘曲变形、主应力及剪应力,并由析因实验哼殳计得到影响热应力的关键因素。研究表明：在回流焊过程中,QFN器件的最大热应力出现在芯片与粘结剂接触面的边角处;主应力和剪切应力的最大值也出现在芯片与粘结剂连接的角点处,其值分别为21．42MPa和-28．47MPa;由析因实验设计可知粘结剂厚度对QFN热应力的影响最大。     

硅微机械陀螺仪封装应力研究

封装热应力会降低硅微机械陀螺仪性能,为了减小封装热应力,对封装热应力与封装材料之间的关系进行了研究.首先对封装的硅微机械陀螺仪结构进行了简化,建立了有限元模型,仿真并分析了在封装过程中陶瓷基底材料和粘接剂对热应力的影响.仿真结果表明,陶瓷基底和粘接剂的热膨胀系数与硅的热膨胀系数匹配,且粘接剂的杨氏模量较小时,热应力较小.粘接层厚度超过60μm,平面尺寸大于陀螺仪芯片尺寸时,热应力较小.     

EMC材料特性对SCSP器件应力及层裂的影响

利用动态机械分析仪测定环氧模塑封(EMC)材料的粘弹特性数据,使用有限元软件MSCMarc分别模拟了EMC材料粘弹性、随温度变化的弹性以及恒弹性三种情况下,SCSP器件在–55～+125℃的等效应力分布及界面层裂。结果表明:125℃和–55℃时最大等效应力分别出现在恒弹性模型、粘弹性模型顶层芯片的悬置区域;将EMC材料视为恒弹性性质时等效应力比粘弹性时大了15.10MPa;–55℃时EMC材料粘弹性模型中裂纹尖端的J积分值比恒弹性模型增长了45%左右,容易引起分层裂纹扩展。     

QFN器件在无铅焊工艺中湿热导致的界面开裂失效研究

界面开裂是塑封IC器件的主要失效模式之一。电子封装用高聚物具有的多孔特性致使封装材料易于吸潮。在无铅回流焊工艺中，整个器件处于相对较高的温度下，致使高聚物吸收的潮湿会膨胀并在材料内部空洞产生很高的蒸汽压力。界面开裂在热机械、湿机械和蒸汽压力的耦合作用下极易发生。本文的主要目的就是研究无铅回流焊工艺中，温度、潮湿和蒸汽压力耦合作用对QFN器件开裂失效的影响。文章对塑料封装QFN器件从168小时的JEDECLevell标准（85℃／85％RH）下预置吸潮到后面的的无铅回流焊的整个过程进行了有限元仿真，并且对温度、湿度和蒸汽压力耦合作用下裂纹的裂尖能量释放率也通过J积分进行了计算。论文的研究结果表明QFN器件吸潮后封装体界面的潮湿成为界面开裂扩展的主要潜在因素，EMC材料、芯片和粘合剂的交点处应力最大，在该处预置裂纹后分析表明回流峰值温度时刻裂纹最易扩展且随裂纹长度增加扩展的可能性在提高。     

硅基HgCdTe面阵焦平面器件结构热应力分析

红外焦平面器件是一个多层结构,包含外延衬底、HgCdTe芯片、Si读出电路、互连In柱、粘结胶以及引线基板等,由于各层材料之间的热膨胀系数不同导致焦平面器件在工作中承受很大的热应力,热应力是导致红外焦平面器件失效的重要因素之一。本文运用一维模型以及有限元分析方法对硅基HgCdTe320×240焦平面器件结构进行热应力分析,结果表明,改变Si衬底厚度、粘结胶的杨氏模量以及基板的热膨胀系数,都会不同程度地影响HgCdTe薄膜上的受力,其中基板的热膨胀系数对HgCdTe薄膜所受的应力影响最大。通过选用合适的基板可以有效降低HgCdTe薄膜所受的应力,从而降低器件失效率。     

DFN封装翘曲和应力分析与优化

回流焊过程中,双边扁平无引脚(DFN)封装会因为巨大的温度变化产生翘曲和应力,影响超高频射频识别(RFID)芯片的性能和可靠性.选取DFN3封装为例从理论方面分析结构和材料参数对封装翘曲和应力的影响,发现减小环氧塑封料(EMC)热膨胀系数(CTE)、增大其杨氏模量均能减小封装翘曲;通过有限元仿真分析得出的结论与理论分析相一致.为了减小封装翘曲和应力,选定具有更小CTE的9240HF10AK-B3(Type R)作为新型EMC.通过有限元仿真结果对比发现,在25℃时,采用新型EMC的封装翘曲增大了 16.8％,应力减小了 4.1％;260℃时,其封装翘曲减小了 45.7％,应力减小了 9.2％.同时,新型EMC的RFID芯片标签回波损耗较之前优化了 6.59％.     

用有限元方法分析Si/GaAs的键合热应力

在考虑材料热膨胀系数随温度变化后,采用有限元方法结合ANSYS软件对Si/GaAs键合热应力进行了分析,研究了普通应力、轴向应力和剪切力的分布云图和沿界面的分布.同时提出了新的键合结构以减小热应力的影响,计算结果证明了该结构的有效性.     

用有限元方法分析Si/GaAs的键合热应力

在考虑材料热膨胀系数随温度变化后,采用有限元方法结合ANSYS软件对Si/GaAs键合热应力进行了分析,研究了普通应力、轴向应力和剪切力的分布云图和沿界面的分布.同时提出了新的键合结构以减小热应力的影响,计算结果证明了该结构的有效性.     

Study on effect of coupling agents on underfill material in flipchip packaging

Coupling agents are widely used in order to improve the adhesion property of underfill. In this study, three different silane coupling agents, two titanate coupling agents, and one zirconate coupling agent were added into an epoxy underfill material. Their effects on the flow behavior and curing profile of the epoxy underfill were studied with a rheometer and a differential scanning calorimeter, respectively. The thermal stability of the cured underfill material was studied with a thermogravimetric analyzer. A thermal mechanical analyzer and a dynamic mechanical analyzer were used to measure the coefficient of thermal expansion, the glass transition temperature (T_g), and the storage modulus (E'). In addition, the adhesion of the underfill on benzocyclobutene passivated silicon die and polyimide passivated silicon die was measured through die shear test. The effects of aging in an 85°C/85% relative humidity chamber were also studied through moisture absorption test and die shear test     

An improved methodology for determining temperature dependentmoduli of underfill encapsulants

Finite element analyses (FEAs) have been widely used to preventively predict the reliability issues of flip-chip (FC) packages. The validity of the simulation results strongly depends on the inputs of the involved material properties. For FC packages Young's modulus-temperature relationship is a critical material property in predicting of the package reliability during -55°C to 125°C thermal cycling. Traditional tensile tests can obtain the modulus at selected temperatures, but are tedious, expensive, and unable to accurately predict the Young's modulus-temperature relationship within a wide temperature range. Thus, this paper is targeted to provide a simple but relatively accurate methodology to obtain the Young's modulus-temperature relationship. In this paper, three commercial silica filled underfill materials were studied. A simple specimen (based on ASTM D638M) preparation method was established using a Teflon mold. A dynamic-mechanical analyzer (DMA) was used to obtain the stress-strain relationship under controlled force mode, storage and loss modulus under multi-frequency mode, and stress relaxation under stress relaxation mode. A simple viscoelastic model was used and an empirical methodology for obtaining Young's modulus-temperature relationship was established     

Numerical analysis of the warpage problem in TSOP

The reliability and the solderability of thin small outline package (TSOP) are significantly affected by the warpage that is generated after epoxy molding compound (EMC) molding process. This warpage problem mainly results from the mismatch of material properties such as Young's modulus, Poisson's ratio and coefficient of thermal expansion (CTE) and the geometric structure of each component for TSOP. The optimization of both material properties and geometric structures using the numerical analysis is necessary to reduce the warpage of TSOP. However, there are still some limitations for the numerical analysis to obtain proper results consistent with the practical warpage values. In this paper, the numerical analysis is performed under the assumption of elastic behavior for EMC. Furthermore, to solve the limitations, the material properties at the molding temperature and the degree of reaction rate at the end of the molding process of EMC are considered together for the analysis. This numerical analysis gives the higher warpage values than the measured ones, and is applicable to the practical design of the reliable electronic package.     

非制冷红外探测器多孔硅绝热层的研究

以多孔硅作为绝热层材料,采用超高真空对靶磁控溅射镀膜法,在多孔硅样品表面和硅基底表面沉积氧化钒薄膜。实验采用电化学腐蚀法制备多孔硅,利用场致发射扫描电子显微镜观测了孔隙率为50%,60%,70%三个多孔硅样品的微观形貌。利用显微喇曼光谱法测量其热导率,分别为8.16,7.28和0.624W/mK;利用纳米压入仪测量氧化钒薄膜的显微硬度和杨氏模量,测得沉积在孔隙率为50%,60%,70%的多孔硅基底上氧化钒薄膜的显微硬度分别为1.917,0.928和0.13GPa,杨氏模量分别为31.087,16.921和2.285GPa,而沉积在单晶硅基底的氧化钒薄膜的显微硬度和杨氏模量分别为10.919GPa和193.792GPa,并分析了微观结构差异对多孔硅绝热性能和机械性能的影响,为非制冷红外探测器的工艺制作过程提供一定的热学力学参数。     

热分析设备测试层压板固化因素的差别

测试PCB板材的Tg以及ΔTg的方法主要有DSC（差示扫描量热法）、TMA（静态热机械分析仪）及DMA（动态热机械分析仪），IPC-TM-650中对DSC、TMA及DMA的测试方法均有介绍，但是相关的IPC标准中并没有对TMA及DMA测试结果的评价机制，目前只有对于DSC评估标准有明确的要求。DSC、TMA及DMA各自根据不同的原理测量玻璃化转变温度，因此其测试结果也具有一些差别。文章通过实验对比统计的方法测试得到TMA及DMA与DSC之间测试Tg及ΔTg存在的差异，分析了其中存在差异的原因。为同行业使用DSC、TMA及DMA三种热分析设备测试Tg及ΔTg的评估提供一些参考。     

Preparation and Characterization of a Novel Epoxy Molding Compound with Low Storage Modulus at High Temperature and Low Glass-Transition Temperature

Epoxy molding compound (EMC) has been widely used as a main material for encapsulation and protection of semiconductor packages because of its low cost, high moisture resistance, high heat resistance, and good mechanical performance. Due to the extensive application of lead-free solder in place of Sn-Pb, soldering temperature is higher than before; this demands that EMC, which is usually used for lead-free solder, should have extremely low thermal stress and excellent stability at elevated temperatures. In this work, 1,3-propanediol bis(4-aminobenzoate) (PBA) was added to an EMC product to form a novel epoxy molding compound (FEMC). PBA had very limited effect on the process feasibility of EMC, and caused reduction of the storage modulus by 40% to 50% at high temperatures and reduction of the glass-transition temperature by more than 10°C, which are very helpful to reduce thermal stress buildup during high-temperature soldering processes. The increases of the tab pull force of copper- and silver-plated lead frames within EMC due to PBA were up to 58% and 117%, respectively. With increasing PBA content in the EMC, water absorption increased in a linear fashion, so the amount of PBA added to the EMC should be limited, preferably to not more than 1%.     

Effects of Thermal Cycling on Material Properties of Nonconductive Pastes (NCPs) and the Relationship Between Material Properties and Warpage Behavior During Thermal Cycling

In this paper, the effects of thermal cycling on material properties such as coefficient of thermal expansion (CTE), modulus, and glass transition temperature $({rm T}_{rm g})$ of nonconductive pastes (NCPs) for flip chip applications were investigated. Using a thermomechanical analyzer, the dimensional changes of NCPs and an underfill material were measured. The dimensional changes of all materials during the first cycle rapidly increased near ${rm T}_{rm g}$. However, the rapid increase of dimensional change near ${rm T}_{rm g}$ was not observed during the second and third cycles. Furthermore, using a dynamic mechanical analyzer, the modulus and ${rm T}_{rm g}$ were measured. The modulus in the first cycle was smaller than that in the second cycle for all materials. After the first cycle, the modulus curves followed the second cycle curve. Next, the warpage behavior of the flip chip assemblies was observed using the Twyman–Green interferometry method to investigate how material property changes affect warpage behavior during thermal cycling (T/C) and it was found that the warpage of the flip chip assembly decreased after the first cycle. However, after the first cycle, the amount of warpage was constant for the following five cycles. As a result, it was verified that the material properties of NCPs and the underfill material change after the first thermal cycle, and the material property changes are closely related to the warpage hysteresis behavior during T/C. Finally, warpage hysteresis was understood as shear strain.      

D2-FBGA热循环载荷下的结构参数优化

利用动态机械分析仪(DMA),测定环氧模塑封材料(EMC)的粘弹性数据;经过数据拟合处理,得到有限元仿真所需的相关参数.将D2-FBGA中芯片厚度、粘结剂厚度、部分EMC厚度及基板厚度作为优化参数,选用正交实验设计,建立了这四个参数的正交表;并用MSC、 Marc,计算了D2-FBGA在热循环载荷下的热应力分布.通过统计软件stata,建立了最大等效应力与上述参数的关系的回归方程;分析了各个结构参数对器件最大等效应力的影响程度;使用单纯形法,得出一组最优结构参数及对应的最大等效应力值.结果表明:通过优化,器件的最大等效应力从(90.58 MPa)下降到66.84 MPa,优化效果明显.     

涂覆层参数对FBG温度灵敏度的影响

分析了涂覆层的物理参数对光纤光栅（FBG）温度灵敏度的影响,数值分析结果表明,大涂覆厚度、高弹性模量、高泊松比、高线膨胀系数有助于提高FBG的温度灵敏度。FBG温度灵敏度的饱和值主要取决于涂覆层的弹性模量和泊松比,因此不能单纯依靠选取大弹性模量或泊松比的涂覆来提高温度灵敏度,还须综合考虑弹性模量和泊松比对温度灵敏度的影响,以确定两参数的最佳值。