Seedless Pattern Growth of Quasi-Aligned ZnO Nanorod Arrays on Cover Glass Substrates in Solution

A hybrid technique for the selective growth of ZnO nanorod arrays on wanted areas of thin cover glass substrates was developed without the use of seed layer of ZnO. This method utilizes electron-beam lithography for pattern transfer on seedless substrate, followed by solution method for the bottom-up growth of ZnO nanorod arrays on the patterned substrates. The arrays of highly crystalline ZnO nanorods having diameter of 60 ± 10 nm and length of 750 ± 50 nm were selectively grown on different shape patterns and exhibited a remarkable uniformity in terms of diameter, length, and density. The room temperature cathodluminescence measurements showed a strong ultraviolet emission at 381 nm and broad visible emission at 585–610 nm were observed in the spectrum.     

Selective Growth of Vertical-aligned ZnO Nanorod Arrays on Si Substrate by Catalyst-free Thermal Evaporation

By thermal evaporation of pure ZnO powders, high-density vertical-aligned ZnO nanorod arrays with diameter ranged in 80–250 nm were successfully synthesized on Si substrates covered with ZnO seed layers. It was revealed that the morphology, orientation, crystal, and optical quality of the ZnO nanorod arrays highly depend on the crystal quality of ZnO seed layers, which was confirmed by the characterizations of field-emission scanning electron microscopy, X-ray diffraction, transmission electron microscopy, and photoluminescence measurements. For ZnO seed layer with wurtzite structure, the ZnO nanorods grew exactly normal to the substrate with perfect wurtzite structure, strong near-band-edge emission, and neglectable deep-level emission. The nanorods synthesized on the polycrystalline ZnO seed layer presented random orientation, wide diameter, and weak deep-level emission. This article provides a C-free and Au-free method for large-scale synthesis of vertical-aligned ZnO nanorod arrays by controlling the crystal quality of the seed layer.     

Effect of ZnO seed layers on the solution chemical growth of ZnO nanorod arrays

High density ZnO nanorod arrays were grown on Si substrates coated with ZnO seed layers via aqueous solution route. The ZnO seed layers were deposited on the substrate using DC reactive sputtering and RF magnetron sputtering. It was found that ZnO seed layer with (1 0 3) preferred orientation, prepared using DC reactive sputtering, did not facilitate the formation of ZnO nanorods in the solution grown process. Prior seeding of the surface by ZnO layer with (0 0 2) preferred orientation, deposited using RF magnetron sputtering, leads to nucleation sites on which ZnO nanorod arrays can grow in a highly aligned fashion. ZnO nanorods with well-defined hexagonal facets (0 0 2) were grown almost vertically over the entire substrate. The uniformity and alignment of the nanorod arrays are strongly related to the properties of underneath ZnO seed layers.     

Growth temperature dependent properties of ZnO nanorod arrays on glass substrate prepared by wet chemical method

In this work, ZnO nanorod arrays were grown on glass substrate by the wet chemical method, and the effect of synthesis temperature on the properties was investigated. The grown nanorods were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Raman and Photoluminescence (PL) measurements. XRD pattern showed that nanorod prepared at 80 °C and 90 °C has high crystallinity with wurtzite structure and orientated along the c-axis. However, nanorods were not formed at 60 °C and 70 °C due to less energy supply for the growth of the ZnO. FE-SEM results showed that the morphology and the size of ZnO can be effectively controlled. In particular, as the temperature increased, diameter of the nanorod was increased while length decreased. Raman scattering spectra of ZnO nanorod arrays revealed the characteristic E₂^high mode that is related to the vibration of oxygen atoms in the wurtzite ZnO. Room-temperature PL spectra of the ZnO nanorods revealed a near-band-edge (NBE) emission peak. The NBE (UV light emission) band at ~383 nm might be attributed to the recombination of free exciton. The narrow full-width at half-maximum (FWHM) of the UV emission indicated that ZnO nanorods had high crystallinity.     

Effect of Aspect Ratio on Field Emission Properties of ZnO Nanorod Arrays

ZnO nanorod arrays are prepared on a silicon wafer through a multi-step hydrothermal process. The aspect ratios and densities of the ZnO nanorod arrays are controlled by adjusting the reaction times and concentrations of solution. The investigation of field emission properties of ZnO nanorod arrays revealed a strong dependency on the aspect ratio and their density. The aspect ratio and spacing of ZnO nanorod arrays are 39 and 167 nm (sample C), respectively, to exhibit the best field emission properties. The turn-on field and threshold field of the nanorod arrays are 3.83 V/μm and 5.65 V/μm, respectively. Importantly, the sample C shows a highest enhancement of factor β, which is 2612. The result shows that an optimum density and aspect ratio of ZnO nanorod arrays have high efficiency of field emission.     

Room-temperature nonequilibrium growth of controllable ZnO nanorod arrays

In this study, controllable ZnO nanorod arrays were successfully synthesized on Si substrate at room temperature (approx. 25°C). The formation of controllable ZnO nanorod arrays has been investigated using growth media with different concentrations and molar ratios of Zn(NO₃)₂ to NaOH. Under such a nonequilibrium growth condition, the density and dimension of ZnO nanorod arrays were successfully adjusted through controlling the supersaturation degree, i.e., volume of growth medium. It was found that the wettability and electrowetting behaviors of ZnO nanorod arrays could be tuned through variations of nanorods density and length. Moreover, its field emission property was also optimized by changing the nanorods density and dimension.     

ZnO纳米棒水热法生长与表征

采用两步法在FTO导电玻璃衬底上制备ZnO纳米棒,首先利用浸渍-提拉法在FTO导电玻璃衬底上制备ZnO晶种层,然后把有ZnO晶种层的FTO衬底放入盛有生长溶液的反应釜中利用水热法制备ZnO纳米棒.研究了生长溶液的浓度、生长温度和生长时间对所制备的对ZnO纳米棒阵列的微结构和光致发光性能的影响,利用X射线衍射(XRD)、扫描电子显微镜(SEM)和光致发光谱(PL)研究了ZnO样品的结构、形貌和光学性质.实验结果表明:所制备的ZnO纳米棒呈现六方纤锌矿结构,沿(002)晶面择优取向生长,纳米棒的平均直径约为100 nm,长度约为2.5 μm.所制备的ZnO纳米棒在390 nm附近具有很强的紫外发光峰和在550 nm附近有较弱的宽绿光发光峰.     

Effects of dye etching on the morphology and performance of ZnO nanorod dye-sensitized solar cells

Dye-sensitized solar cells based on electrodeposited ZnO nanorod arrays were fabricated and tested. Field-emission scanning electron microscopy (FESEM) and X-ray powder diffraction (XRD) were used to identify the characters of ZnO nanorod arrays. The effects of dye etching on the morphology and performance of ZnO nanorod dye-sensitized solar cells were studied. It was found that the surfaces of ZnO nanorods were both etched by dye solutions, no matter N3 or N719. Compared with N3, N719 had a larger damage to the structure of ZnO nanorod photoanode, and the photoelectric conversion efficiency of cells decreased quickly with the sensitizing time increasing. In a certain range, the increasing length of ZnO nanorods can clearly improve the photoelectric conversion efficiency of cells.     

SiC Nanorods Grown on Electrospun Nanofibers Using Tb as Catalyst: Fabrication, Characterization, and Photoluminescence Properties

Well-crystallized β-SiC nanorods grown on electrospun nanofibers were synthesized by carbothermal reduction of Tb doped SiO₂ (SiO₂:Tb) nanofibers at 1,250 °C. The as-synthesized SiC nanorods were 100–300 nm in diameter and 2–3 μm in length. Scanning electron microscopy (SEM) results suggested that the growth of the SiC nanorods should be governed by vapor-liquid-solid (VLS) mechanism with Tb metal as catalyst. Tb(NO₃)₃ particles on the surface of the electrospun nanofibers were decomposed at 500 °C and later reduced to the formation of Tb nanoclusters at 1,200 °C, and finally the formation of a Si–C–Tb ally droplet will stimulate the VLS growth at 1,250 °C. Microstructure of the nanorod was further investigated by transmission electron microscopy (TEM). It was found that SiC <111> is the preferred initial growth direction. The liquid droplet was identified to be Si₈₆Tb₁₄, which acted as effective catalyst. Strong green emissions were observed from the SiC nanorod samples. Four characteristic photoluminescence (PL) peaks of Tb ions were also identified.     

ZnO-capped nanorod gas sensors

This paper reports on the synthesis of pristine α-Fe₂O₃ nanorods and Fe₂O₃–ZnO core–shell nanorods using a combination of thermal oxidation and atomic layer deposition (ALD) techniques; the completed nanorods were then used for ethanol sensing studies. The crystal structure and morphology of the synthesized nanostructures were examined by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The sensing properties of the pristine and core–shell nanorods for gas-phase ethanol were examined using different concentrations of ethanol (5–200 ppm) at different temperatures (150–250 °C). The XRD and SEM revealed the excellent crystallinity of the Fe₂O₃–ZnO core–shell nanorods, as well as their uniformity in terms of shape and size. The Fe₂O₃–ZnO core–shell nanorod sensor showed a stronger response to ethanol than the pristine Fe₂O₃ nanorod sensor. The response (i.e., the relative change in electrical resistance R_a/R_g) of the core–shell nanorod sensor was 22.75 for 100 ppm ethanol at 200 °C whereas that of the pristine nanorod sensor was only 3.85 under the same conditions. Furthermore, under these conditions, the response time of the Fe₂O₃–ZnO core–shell nanorods was 15.96 s, which was shorter than that of the pristine nanorod sensor (22.73 s). The core–shell nanorod sensor showed excellent selectivity to ethanol over other VOC gases. The improved sensing response characteristics of the Fe₂O₃–ZnO core–shell nanorod sensor were attributed to modulation of the conduction channel width and the potential barrier height at the Fe₂O₃–ZnO interface accompanying the adsorption and desorption of ethanol gas as well as to preferential adsorption and diffusion of oxygen and ethanol molecules at the Fe₂O₃–ZnO interface.     

Growth of vertically aligned ZnO nanorods using textured ZnO films

A hydrothermal method to grow vertical-aligned ZnO nanorod arrays on ZnO films obtained by atomic layer deposition (ALD) is presented. The growth of ZnO nanorods is studied as function of the crystallographic orientation of the ZnO films deposited on silicon (100) substrates. Different thicknesses of ZnO films around 40 to 180 nm were obtained and characterized before carrying out the growth process by hydrothermal methods. A textured ZnO layer with preferential direction in the normal c-axes is formed on substrates by the decomposition of diethylzinc to provide nucleation sites for vertical nanorod growth. Crystallographic orientation of the ZnO nanorods and ZnO-ALD films was determined by X-ray diffraction analysis. Composition, morphologies, length, size, and diameter of the nanorods were studied using a scanning electron microscope and energy dispersed x-ray spectroscopy analyses. In this work, it is demonstrated that crystallinity of the ZnO-ALD films plays an important role in the vertical-aligned ZnO nanorod growth. The nanorod arrays synthesized in solution had a diameter, length, density, and orientation desirable for a potential application as photosensitive materials in the manufacture of semiconductor-polymer solar cells.

PACS

61.46.Hk, Nanocrystals; 61.46.Km, Structure of nanowires and nanorods; 81.07.Gf, Nanowires; 81.15.Gh, Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)     

A simple electrochemical deposition route for the controllable growth of Ce-doped ZnO nanorods

Here we report that the various Ce⁴⁺-doped ZnO nanorods can be successfully synthesized by electrochemical deposition route, which represents a simple, quick and economical method for the controllable growth of Ce⁴⁺-doped ZnO nanorods. The high-resolution transmission electron microscopy (HRTEM) and the selected area electron diffraction (SAED) both proved that the prepared Ce⁴⁺-doped ZnO nanorods consisted of single crystal with preferential growth in the [0 0 0 1] direction. The morphology and size of the nanorods can be tailored by optimizing the synthetic parameters. Furthermore, the flowerlike Ce⁴⁺-doped ZnO nanorod clusters can also be successfully prepared. An obvious blue-shifted absorption peak of Ce⁴⁺-doped ZnO nanorod compared with that of the bulk ZnO phase was observed.     

Microcontact Printing of Organic Self-Assembled Monolayers for Patterned Growth of Well-Aligned ZnO Nanorod Arrays and their Field-Emission Properties

This paper describes a simple method for preparing well-aligned ZnO nanorod arrays in a more tunable fashion, which enables the synthesis of nanorods directly in various patterns and the easy control of the array density. This method is based on a combination of the microcontact printing process for patterning and a solution approach for depositing ZnO nanorods. The growth behavior between the contact and noncontact areas is investigated. Different formation mechanisms are proposed, and it is found that the key difference between nanorod and microrod forms was the ZnO seed layer and the van der Waals force at specific conditions. The role of self-assembled monolayers of octadecyl-trichloro-silane in the reaction solution is also discussed. Wettability of the surfaces is assessed by measuring the water contact angle, and the results show significant variation with surface morphology, from 17.6° to 123.6°. The lowest turn-on applied field strength is 4.65 V/μm at the current density of 10 μA/cm², which is achieved by the lowest array density of nanorods. The field-emission characteristics of the nanorods are found to be highly reproducible. The results could be valuable for the application of field-emission-based devices using ZnO nanorod arrays as cathode materials.     

Controllable size and photoluminescence of ZnO nanorod arrays on Si substrate prepared by microwave-assisted hydrothermal method

High-quality ZnO nanorod arrays were grown on silicon substrates by microwave-assisted hydrothermal method. A ZnO seed layer deposited by magnetron sputtering was used for promoting nanorod growth. Process optimization indicates that the size and surface density of nanorods can be controlled individually by varying process parameters including precursor concentration, heating temperature, and heating time. The photoluminescence performance of the nanorods is closely dependent on the mean size of the rods. Reducing rod diameter leads to decreased UV emission and visible emission intensity ratio, which has been attributed to the increased impurities or defects on the rod surface. The present results provide a feasible approach to modify the optical properties of transparent ZnO nanorod arrays.     

Growth of three-dimensional ZnO nanorods by electrochemical method for quantum dots-sensitized solar cells

There-dimensional (3D) superstructure was expected to fabricate high performance photoelectrodes of quantum dot-sensitized solar cells (QDSCs). In this paper, the ZnO 3D superstructure with multi-layer structure (3D ZnO nanorods) was grown on ITO glass by a novel electrochemical method at low temperature (60–90 °C). The 3D ZnO nanorods were composed of close-packed ZnO nanorod bundles with wide dimension distribution ranging from hundreds of nanometers to several micrometers. The effects of some important parameters, such as concentration of Zn(NO₃)₂, deposition temperature and concentration of ZnO nanoparticles (served as growth seeds for ZnO nanorods), on the morphology of 3D ZnO nanorods were also studied by scanning electron microscopy. Once being applied in QDSCs, the 3D ZnO nanorods showed more superior photoelectrochemical performance to ZnO nanorod array. The conversion efficiency of 1.42% achieved by the QDSC based on 3D ZnO nanorods was a very promising value for the QDSCs based on ZnO electrodes.     

Facile solution growth of vertically aligned ZnO nanorods sensitized with aqueous CdS and CdSe quantum dots for photovoltaic applications

Vertically aligned single crystalline ZnO nanorod arrays, approximately 3 μm in length and 50-450 nm in diameter are grown by a simple solution approach on a Zn foil substrate. CdS and CdSe colloidal quantum dots are assembled onto ZnO nanorods array using water-soluble nanocrystals capped as-synthesized with a short-chain bifuncional linker thioglycolic acid. The solar cells co-sensitized with both CdS and CdSe quantum dots demonstrate superior efficiency compared with the cells using only one type of quantum dots. A thin Al2O3 layer deposited prior to quantum dot anchoring successfully acts as a barrier inhibiting electron recombination at the Zn/ZnO/electrolyte interface, resulting in power conversion efficiency of approximately 1% with an improved fill factor of 0.55. The in situ growth of ZnO nanorod arrays in a solution containing CdSe quantum dots provides better contact between two materials resulting in enhanced open circuit voltage.     

Fabrication and characterization of silicon wire solar cells having ZnO nanorod antireflection coating on Al-doped ZnO seed layer

In this study, we have fabricated and characterized the silicon [Si] wire solar cells with conformal ZnO nanorod antireflection coating [ARC] grown on a Al-doped ZnO [AZO] seed layer. Vertically aligned Si wire arrays were fabricated by electrochemical etching and, the p-n junction was prepared by spin-on dopant diffusion method. Hydrothermal growth of the ZnO nanorods was followed by AZO film deposition on high aspect ratio Si microwire arrays by atomic layer deposition [ALD]. The introduction of an ALD-deposited AZO film on Si wire arrays not only helps to create the ZnO nanorod arrays, but also has a strong impact on the reduction of surface recombination. The reflectance spectra show that ZnO nanorods were used as an efficient ARC to enhance light absorption by multiple scattering. Also, from the current-voltage results, we found that the combination of the AZO film and ZnO nanorods on Si wire solar cells leads to an increased power conversion efficiency by more than 27% compared to the cells without it.     

Facile Synthesis of ZnO Nanorods by Microwave Irradiation of Zinc–Hydrazine Hydrate Complex

ZnO nanorods have been successfully synthesized by a simple microwave-assisted solution phase approach. Hydrazine hydrate has been used as a mineralizer instead of sodium hydroxide. XRD and FESEM have been used to characterize the product. The FESEM images show that the diameter of the nanorods fall in the range of about 25–75 nm and length in the range of 500–1,500 nm with an aspect ratio of about 20–50. UV–VIS and photoluminescence spectra of the nanorods in solution have been taken to study their optical properties. A mechanism for microwave synthesis of the ZnO nanorods using hydrazine hydrate precursor has also been proposed.     

A two-step route to synthesize highly oriented ZnO nanotube arrays

Large-scale and highly oriented ZnO nanotube arrays are synthesized on transparent conductive glass substrates by a two-step route. First, ZnO nanorod arrays were prepared by electrochemical deposition from an aqueous solution of zinc nitrate. Then, hollow ZnO nanotubes were obtained by the selective dissolution of the electrodeposited ZnO nanorods in potassium hydroxide solution. Field emission scanning electron microscopy (FESEM) and X-ray powder diffraction (XRD) have been used to characterize the morphology and structure of the derived products. The effect of the concentration of alkali, dissolution time, and temperature on the formation process and morphologies of ZnO nanotube arrays has been discussed.     

Broadband anti-reflective properties of grown ZnO nanopyramidal structure on Si substrate via low-temperature electrochemical deposition

Anti-reflection coatings (ARCs) are widely used in various optical and optoelectronic devices to minimize the reflection of light. In this study, we demonstrated the fabrication of ZnO nanopyramidal structures on Si substrate via low-temperature electrochemical deposition. We also investigated the anti-reflection (AR) properties of these nanostructures compared with nanorods and planar ZnO texture on Si substrates. We changed the growth conditions, namely, growth temperature and applied current density, to modify the shape of the ZnO nanorod tips. Nanopyramidal structures with continuously varying refractive index profiles in a single layer were obtained. Reflectance spectra show that the nanopyramid-based texture reduced the reflection of light in a broad spectral range from 380 nm to 1000 nm and is much more effective than nanorod and planar textures. For nanopyramid arrays (NPAs) with average tip diameter of 20 nm, we achieved a 6.5% reflectance over a wide range of wavelengths, which is superior to an optimized single-layer ARC such as SiO₂ or TiO₂. These textured ZnO ARCs may be applied to a wide variety of photovoltaic devices and other anti-reflection applications with large areas because of their low temperature, fast growth, and simple fabrication.