Structural,electrical and optical properties of copper selenide thin films deposited by chemical bath deposition technique

A low cost chemical bath deposition (CBD) technique has been used for the preparation of Cu_2–xSe thin films on glass substrates. Structural, electrical and optical properties of these films were investigated. X-ray diffraction (XRD) study of the Cu_2–xSe films annealed at 523 K suggests a cubic structure with a lattice constant of 5.697 Å. Chemical composition was investigated by X-ray photoelectron spectroscopy (XPS). It reveals that absorbed oxygen in the film decreases remarkably on annealing above 423 K. The Cu/Se ratio was observed to be the same in as-deposited and annealed films. Both as-deposited and annealed films show very low resistivity in the range of (0.04–0.15) × 10^–5 -m. Transmittance and Reflectance were found in the range of 5–50% and 2–20% respectively. Optical absorption of the films results from free carrier absorption in the near infrared region with absorption coefficient of 10⁸ m^–1. The band gap for direct transition, E_g.dir varies in the range of 2.0–2.3 eV and that for indirect transition E_g.indir is in the range of 1.25–1.5 eV.     

Deposition of luminescent a-SiN<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>:H Films with SiH<Subscript>4</Subscript>–N<Subscript>2</Subscript> gas mixture by VHF–PECVD using novel impedance matching method

Hydrogenated amorphous silicon nitride (a-SiN _x :H) films are produced from a SiH₄–N₂ gas mixture by plasma enhanced chemical vapor deposition (PECVD) system with a newly developed impedance matching method at frequencies 13.6–150 MHz. An increase in the rf power from 35 to 350 mW/cm² at the highest frequency of 150 MHz increases the optical bandgap (E _opt) from 2.0 to 4.5 eV. Optical emission spectroscopy (OES) of the SiH₄–N₂ plasma shows that the emission intensity of SiH* (414 nm) is almost proportional to deposition rate. Films of a-SiN _x :H deposited at 150 MHz and 210 mW/cm² has an optical bandgap of E _opt ≈ 4.1 eV and emits visible photoluminescence (PL) at room temperature (RT).     

Thermal induced transformations in glassy chalcogenides SixTe60−xAs30Ge10

Temperature-induced transformations are considered to be interesting characteristic properties of amorphous materials including the Si _x Te_60–x As₃₀Ge₁₀ system, withx=5, 10, 12 and 20. Density (), X-ray diffraction and differential thermal analysis (DTA) were used to characterize the compositions. DTA traces of each glass composition at different heating rates from 5 to 30° C min^–1 were obtained and interpreted. Fast and slow cooling cycles were used to determine the rate of structure formation. Cycling studies of materials show no memory effect but only ovonic switching action. The compositional dependence of the crystallization activation energy (E) and the coefficient of glass-forming tendency (K _gl) have been calculated. The thermal transition temperatures and associated changes in specific heat have been examined as a function of the Te/Si ratio by differential scanning calorimetry. It was found that andE increase linearly with increasing tellurium content, while the heat capacity (c _p) andK _gl, decrease with increasing tellurium content.E=1.54 eV andc _p=0.246 J g^–1 K^–1 forx=20 whileE=2.74eV andc _p=0.22 J g^–1 K^–1 forx=5.     

Cu2+ ions in sodium fluoride-sodium borate glasses studied by EPR and optical absorption techniques

Electron paramagnetic resonance (EPR) and optical absorption spectra of Cu²⁺ ions in 80Na₂B₄O₇-(20 – x)NaF – xCuO (NFNB) glass system with 0 x 6 mol% have been studied. EPR spectra of all the glass samples exhibit resonance signals characteristic of Cu²⁺ ions. The values of spin-Hamiltonian parameters indicate that the Cu²⁺ ions in sodium fluoride-sodium borate (NFNB) glasses were present in octahedral sites with tetragonal distortion. The number of spins (N) participating in resonance was calculated as a function of temperature for NFNB glass sample containing 1 mol% of Cu²⁺ ions and the activation energy was calculated. From the EPR data, the paramagnetic susceptibility () was calculated at various temperatures and the Curie constant was calculated from the 1/ – T graph. The optical absorption spectra of these samples show a broad absorption band centered at 13280 cm^–1 which is assigned to the ² B _1g ² B _2g transition of Cu²⁺ ions in distorted octahedral sites. The optical band gap energy (E _opt) and Urbach energy (E) are calculated from their ultraviolet edges. It is observed that as the copper ion concentration increases, E _opt decreases while E increases. This has been explained as due to the creation of additional localized states by CuO, which overlap and extend in the mobility gap of the matrix. By correlating the EPR and optical data, the molecular orbital coefficients have been evaluated.     

Superconducting Density of States from the Magnetic Penetration Depth of Electron-Doped Cuprates La2−x Ce x CuO4−y and Pr2−x Ce x CuO4−y

From measurements of the magnetic penetration depth, (T), from 1.6 K to T _c in films of electron-doped cuprates La_2–x Ce _x CuO_4–y and Pr_2–x Ce _x CuO_4–y we obtain the normalized density of states, N _s(E) at T=0 by using a simple model. In this framework, the flat behavior of ^–2(T) at low T implies N _s(E) is small, possibly gapped, at low energies. The upward curvature in ^–2(T) near T _c seen in overdoped films implies that superfluid comes from an anomalously small energy band within about 3k _B T _c of the Fermi surface.     

Space charge limited current, variable range hopping and mobility gap in thermally evaporated amorphous InSe thin films

We have analyzed the properties of as-deposited InSe thin films, deposited onto well cleaned glass substrates under a vacuum of 10^–5 Torr, using X-ray diffraction, Rutherford back scattering, energy dispersive analysis of X-rays, optical transmittance and current–voltage (120–390 K) measurements. Allowed and indirect transition was identified and the mobility gap was determined as 1.44 eV. Under low field (<1×10⁵ V cm^–1) and in the temperature range of 130–200 K, the conductivity in the films was behaving like that of Mott's variable-range hopping (VRH) type. Mott's parameters such as characteristics temperature (T ₀), hopping range (R _hop), hopping energy (W _hop), values of localized states density N (E _F), and activation energy (E _a) were estimated. In the temperature range 210–290 K, thermionic conduction mechanism plays a dominant role and its activation energy was calculated. At high field (>2×10⁵ V cm^–1) and in the temperature range of 300–390 K, space charge limited conduction currents (SCLC) mechanism was observed and the related parameters, such as electron density (n ₀), trap density (n _t), the ratio between free electron density to the total electron density (), mobility () and the effective mobility (_eff) of the InSe film of typical thickness 265 nm were calculated and the results are discussed.     

Proton Conductivity in H2 – x (NH4) x V9Mo3O32.5 – δ · nH2O Xerogel Films

The electrical conductivity of _{2 – x} (NH₄) _x V₉Mo₃O_{32.5 –} · nH₂O xerogel films containing different amounts of ammonium ions and water was measured as a function of temperature. The results demonstrate that, in a wide temperature range, the proton conductivity of the films reaches a maximum atx= 1.5. The activation energy of conductivity in the films, equal to 0.1–0.2 eV at low temperatures, rises upon partial dehydration above 100°C. The possible mechanisms of proton formation and transport are discussed.     

Inelastic Interaction of an Electron with a C60 Cluster

The method of intersecting beams of C₆₀ fullerene clusters and of electrons is used to investigate the production of C ₆₀ ⁺ and C ₆₀ ^– ions and the radiation in the wavelength range from 300 to 800 nm for the electron energy E _e ranging from zero to 100 eV. The absolute values of the ionization and electron-attachment cross sections [⁺(E _e ) and ^–(E _e ), respectively] are determined. A maximum of ⁺(E _e ) of 0.53 nm²is observed at E _e = 52 eV. For a C₆₀ cluster excited by electron impact, delayed (150 s) ionization initiated by collision with the surface and ionization due to thermionic emission (its characteristic time at E _e = 60 eV is 6 s) is observed. It is found that, for E _e < 0.4 eV, the formation of C ₆₀ ^– is defined by the polarization capture of an s-electron (^– E _e ^–1 ), and a formula is suggested for determining ^–(E _e ). In the region of E _e from 1 to 6 eV, the cross section ^–(E _e ) shows only slight variations about ^–(E _e ) = 0.36 ± 0.03 nm². For E _e > 7.5 eV, C ₆₀ ^– ions proved to be unstable to electron autodetachment. In the region of intersection of C₆₀ and electron beams, radiation of a quasicontinuous spectrum described by a modified Planck formula for the thermal emission of spherical particles of diameter d is recorded. For E _e > 47 eV, the brightness temperature proved to be 3150 ± 50 K. It is found that this radiation is emitted predominantly by hot C ₆₀ ^+* ions produced as a result of thermionic emission from C ₆₀ ^* . The rate of radiation loss of energy by a C ₆₀ ^+* ion and the cross section for the formation of radiating C ₆₀ ^+* ions are found to be, respectively, 5.5 × 10⁵ eV/s at T = 3150 K and 2 × 10^–2 nm² at E _e = 60 eV.     

Thermal stability of hafnium silicate dielectric films deposited by a dual source liquid injection MOCVD

The hafnium and silicon precursors, Hf(NMe₂)₄ and Bu^tMe₂SiOH, have been investigated for the MOCVD of high- hafnium silicate, (HfO₂)_1–x –(SiO₂) _x films for gate dielectric applications. Control of the silica concentration in the hafnium silicate can be achieved by varying the relative precursor ratios up to a saturation level of 35–40% SiO₂. The thermal stability of the resulting hafnium silicate films in air has been investigated using medium energy ion scattering. Internal oxidation of the underlying silicon substrate is discernable when the films are annealed in dry air for 15 min over the temperature range 800–1000 °C.     

A novel method of introducing PbO dopant and (the study of) its influence on the electrical properties of semiconducting Cd2−x Pb x SnO4 thick films

The sheet resistance of Cd₂SnO₄ thick films was reduced from 15580 to 0.09 k with respect to dopant concentration and peak firing temperature (600 to 900° C). Distinct colour changes were observed in these films. The inorganic binder introduced an impurity which greatly induce changes in its electrical properties. The Arrhenius relation (logR–10³/T) generally indicated slopes of 2 to 3 for all the compositions of Cd_2–x Pb _x SnO₄ (x=0.002, 0.01, 0.02, 0.04 and 0.1). The donor ionization energies (E _d) varied from 0.01 to 0.76 eV. Resistance measurements during heating-cooling cycles indicated the possible presence of structural defects such as oxygen vacancies and cadmium interstitials. The oxidation of dopant (Pb²⁺Pb⁴⁺+2e) contributed in a major way to the overall conductivity. Scanning electron micrographs showed a progressive network formation due to sintering, thus contributing to the carrier mobility.     

Calculation of the Optical Spectra of Fluorite

Experimental, experimental–calculated, and theoretical absorption, reflection, and E ²₂(E) spectra of fluorite crystals were analyzed in the range 6–35 eV. General trends and characteristic features of the spectra were revealed, and the most reliable R(E) data were identified. The experimental–calculated (E) and E ²₂(E) data were shown to agree well with predictions of two theoretical models.     

Kinetic and electrical characterization of thin silicon oxide films obtained by electron cyclotron resonance plasma

We report the use of ECR plasma to grow and deposit silicon oxides ranged between 2.5 and 10 nm with rates between 0.04 and 2.0 nm s^–1. The thickness of the films, well grown or deposited, were characterized by means of a spectroscopic ellipsometer, operating in the 1.5–4.5 eV range. Uniformities of thin oxide films were better than 4% on 3 silicon wafers, and ranged from 4% to 6% between different runs. The concentrations of the different chemical species during the first stages of the plasma formation were followed by optical emission spectroscopy to give some insight into the origin of the properties of the different thin SiO _x films. FT-IR spectra show bands with larger FWHM in ECR oxides than in the thermal ones, but the main peak positions were close to one another in the spectra of the three kinds of oxides. The observed mode strength for the LO₄-TO₄ pair of each spectrum is the main aspect that distinguishes the deposited from the grown film, indicating unequal degrees of disorder in both oxides. C–V measurements were performed in MOS capacitors. In the as-deposited SiO _x films a positive net oxide charge density similar to the one in the thermal SiO₂ films is observed. It is worth noting that a post-metallization anneal causes a reduction of the initial net charge density and even a sign change, depending on the treatment conditions.     

Transport properties of InSe x flash evaporated thin films

Thin films of InSe _x were obtained by vacuum evaporation of polycrystalline materials onto substrates at moderate temperatures,T _s. Electrical properties of films grown from different stoichiometries of flash source materials are reported in this work. The temperature dependence of the conductivities shows two conduction regimes. The low temperature regime exhibits aT ^–1/4 conductivity dependence which fits well, using the Mott model, with an average localized states density value ofN(E _F ) 8×10¹⁸cm^–3eV^–1. Hall measurements as a function of temperature show that the predominant conduction mechanism is scattering by grain boundaries in polycystalline films.     

Characterization of thermally evaporated AgGaTe<Subscript>2</Subscript> films grown on KCl substrates

Silver gallium telluride (AgGaTe₂) films have been grown by thermal evaporation technique onto the KCl substrates kept at different temperatures (483–563 K) in a vacuum of 1.3 × 10^–3Pa. The experimental conditions were optimised to obtain better crystallinity of the films. The films so prepared have been studied for their structural, optical and electrical properties. Observations reveal that the crystallinity of the films increases with increase in substrate temperature. Average crystallite size of 0.2–0.5 m has been observed in case of films deposited at 563 K. Analysis of optical spectra of the films in the range 300–1100 nm show an allowed direct transition near the fundamental absorption edge (E_g1) in addition to a transition originating from crystal field split levels (E_g2). It has been observed that the carrier concentration and Hall mobility of films increases with increase in substrate temperature.     

Effect of structural defects on optical properties of amorphous selenium films

Thickness of film, energy of incident photons and glass transition temperature all affect the structural bonding between neighbours and are considered to be the main factors in studying the optical properties of amorphous selenium films. The results indicate that in the lowtemperature range (T <T _g), a shift in the absorption edge to lower photon energies with increasing film thickness occurs. Increasing the thickness is accompanied by a decrease in the optical energy gap,E _g ^opt , with a gradient of 5×10^–4eV nm^–1. In the high-temperature range (T >T _g), the value ofE _g ^opt for a given thickness decreases by more than 50% due to pronounced modulation of the structural defects under incidence of isoenergetic photons of 1.8 eV. The isothermal curves ofT,R=f(t), atT >T _g, take place via three time-dependent stages. These results are interpreted and are correlated with the temperature dependence of the morphological changes declaring the formation of spherulites having a lamellar structure. The kinetic parameters controlling the structural transition are computed and the results are discussed.     

Properties of LT-AlGaN films and HT-GaN films using LT-AlGaN buffer layers grown on (0001) sapphire substrates

Low-temperature (LT) Al_xGa_1–xN (0.1 < x < 0.8) films, 0.4 m in thickness, were prepared on (0001) sapphire substrates at 500,C by alternate supply of Ga and Al alkyls and ammonia (NH₃). Al composition in the solid phase was identified based on the shift of the (0002) Bragg angle of X-ray diffraction. A series of high temperature (HT) GaN films, 1.0 m in thickness, were also grown at 1000,C on the LT-Al_xGa_1–xN coated (0001) sapphire substrates with buffer layer thickness ranging from 7.5 to 20 nm. It was found that the optimized LT-Al_xGa_1–xN buffer layer thickness decreases linearly with the Al-content. As-grown HT-GaN films having LT-LT-Al_0.43Ga_0.57N buffer layers show smooth surface based on optical microscopic (OM) observations. Transmission electron microscopy (TEM) confirms the mono-crystalline nature of the HT-GaN films. The quenched near band-edge photoluminescence (PL) emissions and an apparent yellow luminescence of the HT-GaN films are attributed to the LT-Al_xGa_1–xN buffer layer induced mosaic microstructure and bonding defects in the films.     

Structural and electrical properties of cadmium-sulpho-selenide solid solutions

Complete solid solutions of CdS _x Se_1–x (0x1) were synthesized by vacuum fusion of stoichiometric proportions of CdS and CdSe. X-ray diffraction data revealed that they possess the hexagonal wurtzite structure. The unit cell lattice constants vary linearly with the composition parameter,x, following Vegard's law.Thin films of CdS _x Se_1–x (0x1) solid solutions could be deposited onto glass substrates by thermal evaporation of the bulk material in 10^–4 Pa vacuum. Structural investigation showed that the films are polycrystalline with predominant appearance of the (002) reflecting plane. On annealing at 250°C in 10^–2 Pa vacuum atmosphere, aggregation and rearrangement of the as-deposited tiny crystallite occurred, preserving the same crystal structure.The dark electrical resistivity of the films is independent on the film thickness, but it varies appreciably with the composition parameter,x, showing a minimum resistivity of 0.02 cm atx=0.55. The temperature dependence of the resistivity follows the semiconducting behaviour with an extrinsic and an intrinsic conduction below and above 70°C, respectively. The determined activation energies 0.2 eV and 0.8 eV, respectively, correspond to shallow and deep trap levels, respectively.     

Schottky barrier height enhancement on n-In0.53Ga0.47As by (NH4)2S x surface treatment

(NH₄)₂S _x Surface treatment was found to increase the barrier height (_Bn) for Au/In_0.53Ga_0.47As Schottky junctions from 0.26 eV to 0.58 eV at 300 K as determined from Richardson plots. The ideality factorn thus decreased from 2.7 to 1.6 and the reverse saturation current densityJ ₀ from 9.4 Acm^–2 to 3.4×10^–5A cm^–2. The values of the effective Richardson constant were also evaluated. The chemical state of In_0.53Ga_0.47As surfaces before and after (NH₄)₂S _x modification, examined by X-ray photoelectron spectroscopy (XPS), indicated bond formation of S with In, Ga and As.     

Microstructure and secular instability of the (Ti1 − x,Alx)N films prepared by ion-beam-assisted-deposition

(Ti_{1 – x} ,Al _x )N films were prepared by ion beam assisted deposition (IBAD). The films were synthesized by depositing titanium and aluminum metal individual vapor under simultaneous bombardment with nitrogen ions in the energy range of 0.2–20 keV with the (Ti_{1 – x} ,Al _x )/N transport ratio in the range of 0.5–2.0. The films were formed onto Si(111) wafers at room temperature. Structural characterization of the films was performed with x-ray diffraction and selected area electron diffraction. The crystalline structure of the (Ti_0.64,Al_0.36)N and (Ti_0.33,Al_0.67)N films were found to be a metastable single-phase B1-NaCl structure. The (Ti_0.29,Al_0.71)N films revealed a two-phase mixture consisting of NaCl and würtzite structural phases. The AlN solubility limit into TiN, which approximately equal with x value, calculated by using electron theory was about x = 0.65, which shows good agreement to the experimental results. Phase separation after half a year of aging at room temperature in air was observed on the (Ti_0.33,Al_0.67) films whose AlN content is close to the solubility limits.