Templated growth of tungsten oxide micro/nanostructures using aerosol assisted chemical vapour deposition

Porous anodized alumina (PAA) and macroporous silicon (MS) substrates have been used to template the growth of tungsten oxide via aerosol assisted chemical vapour deposition from the precursor tungsten hexaphenoxide. The results show that thin PAA substrates have potential as templates for growing microstructured tungsten oxide films and MS substrates cause the growth of ‘grids’ of polycrystalline tungsten oxide.     

新型脉冲激光能量计用无铅(Na_(1-x)K_x)_(0.5)Bi_(0.5)TiO_3铁电薄膜的制备及其激光感生热电电压信号的研究

采用脉冲激光沉积(PLD)技术,分别在LaA lO3(LAO)、(La,Sr)(A l,Ta)O3(LAST)及SrTiO3(STO)三种不同的单晶衬底上制备了一系列无铅(Na1-xKx)0.5B i0.5TiO3(x=0.00,0.08,0.19,0.30,NKBT)铁电薄膜材料。利用X射线衍射(XRD)仪对薄膜结构进行了分析,结果表明在单晶平衬底上生长的薄膜都是单取向生长的外延膜,其中摇摆曲线的半高宽(FWHM)显示在(La,Sr)(A l,Ta)O3单晶衬底上生长的薄膜结晶质量最好。另外,在20°倾斜的(La,Sr)(A l,Ta)O3单晶衬底上生长的(Na1-xKx)0.5B i0.5TiO3铁电薄膜中还首次观察到了激光感生热电电压(LITV)信号。发现在能量为0.48mJ/pulse的紫外脉冲激光辐照下,其最大激光感生热电电压为31mV,完全满足了制作脉冲激光能量计探测元件的要求,有望开发出可集成的新型脉冲激光能量计。     

Enhanced Flux Pinning Properties of BaZrO3-doped YBCO Films Grown by Pulsed Laser Deposition on LaAlO3(100) Substrates Decorated with Y2O3 Nanoislands

In this work, we intend to investigate the interaction between two types of nanoscaled artificial pinning centers and their pinning properties in YBCO thin films grown by pulsed laser deposition technique. The two types of artificial pinning centers were prepared in different processes, (1) Y₂O₃ nanoislands decorated on substrates prior to the deposition of YBCO thin film, and (2) BaZrO₃ nanoparticles self-assembled within YBCO matrix during the deposition of YBCO thin film. We compared the transport characteristics of the YBCO thin films containing these two types of artificial pinning centers with those of pure YBCO thin films grown on decorated substrates and BZO-doped YBCO thin films grown on undecorated substrates. It was found that these two types of artificial pinning centers, which are simultaneously present, acted constructively to enhance the pinning properties of YBCO thin films.     

Si(100)衬底上PLD法制备高取向度AlN薄膜

采用脉冲激光沉积法(PLD),以KrF准分子为脉冲激光源,Si(100)为衬底,同时引 入缓冲层TiN和Ti_0.8Al_0.2N,制备了结晶质量优异的A1N薄膜,X射线衍射(XRD)及反射 式高能电子衍射(RHEED)分析表明A1N薄膜呈(001)取向、二维层状生长.研究发现,薄膜 的生长模式依赖于缓冲层种类,直接在Si衬底上或MgO／Si衬底上的A1N薄膜呈三维岛状生 长;而同时引入缓冲层TiN和Ti_0.8Al_0.2N时,A1N薄膜呈二维层状生长.此外,激光能量密 度大小对A1N薄膜的结晶性有显著的影响,激光能量密度过大,薄膜表面粗糙,有颗粒状沉积 物生成.在氮气气氛中沉积,能使薄膜的取向由(001)改变为(100).     

Optisch dünne Schichten aus Sicht eines Anwenders

Optical thin films are used for example, in precision optics. Their effect is important for lenses with many elements. In special plants, materials are evaporated in order to deposit to a thin film on substrates. Cleaning before and smoothing after deposition are also steps in thin film production. Because of its advantages, ion-assisted deposition of cold substrates overcomes conventional physical vapour deposition of heated substrates.     

The preparation and characterization of preferred (110) orientation aluminum nitride thin films on Si (100) substrates by pulsed laser deposition

The preferred (110) oriented aluminum nitride (AlN) thin films have been prepared by pulsed laser deposition on p-Si (100) substrates. The films were characterized with X-ray diffraction, Raman spectroscopy, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and atomic force microscope (AFM). The results indicate that the AlN thin films are well-crystallized when laser energy is higher than 300 mJ/puls. The AFM images show that the surface roughness of the deposited AlN thin films gradually increases with increasing laser energy, but the surface morphologies are still very smooth. The crystallinity and morphology of the thin films are found to be strongly dependent on the laser energy.     

Growth of nano-needles of manganese(IV) oxide by atomic layer deposition

Needles of manganese (IV) oxide in the nanometer range have been synthesised using the atomic layer deposition technique. Traditionally the atomic layer deposition technique is used for the fabrication of thin films, however, we find that needles of beta-MnO2 are formed when manganese (IV) oxide is deposited as relatively thick (ca. 800 nm) thin films on substrates of alpha-Al2O3 [(001) and (012) oriented]. There is no formation of needles when the film is deposited on substrates such as Si(100) or soda lime glass. The film is formed using Mn(thd)3 (Hthd = 2,2,6,6-tetramethylheptane-3,5-dione) and ozone as precursors. While thin films (ca. 100 nm) consist of epsilon'-MnO2, the same process applied to thicker films results in the formation of nano-needles of beta-MnO2. These needles of beta-MnO2 have dimensions ranging from approximately 1.5 microm at the base down to very sharp tips. The nano-needles and the bulk of the films have been analysed by atomic force microscopy, scanning electron microscopy, X-ray diffraction, and transmission electron microscopy.     

Photocatalytic TiO(2) deposition by chemical vapor deposition

Dip-coating, spray-coating or spin-coating methods for crystalline thin film deposition require post-annealing process at high temperature. Since chemical vapor deposition (CVD) process is capable of depositing high-quality thin films without post-annealing process for crystallization, CVD method was employed for the deposition of TiO(2) films on window glass substrates. Post-annealing at high temperature required for other deposition methods causes sodium ion diffusion into TiO(2) film from window glass, resulting in the degradation of photocatalytic efficiency. Anatase-structured TiO(2) thin films were deposited on window glass by CVD, and the photocatalytic dissociation rates of benzene with CVD-grown TiO(2) under UV exposure were characterized. As the TiO(2) film deposition temperature was increased, the (112)-preferred orientations were observed in the film. The (112)-preferred orientation of TiO(2) thin film resulted in a columnar structure with a larger surface area for benzene dissociation. Obviously, benzene dissociation rate was maximum when the degree of the (112) preferential orientation was maximum. It is clear that the thin film TiO(2) should be controlled to exhibit the preferred orientation for the optimum photocatalytic reaction rate. CVD method is an alternative for the deposition of photocatalytic TiO(2).     

Co掺杂量对ZnO薄膜结构及光学特性的影响

采用脉冲激光沉积法(PLD)在SiO2村底上成功制备了具有c轴择优生长特性的Zn1-xCoxO(x=0.05、0.1、0.2、0.3)系列薄膜.通过X射线衍射和能谱仪研究了Co掺杂量对薄膜晶体结构和成分的影响;同时利用光致发光谱(PL)和透过率研究了薄膜的光学特性.结果表明,当掺杂浓度为10%时,薄膜生长最好,c轴择优生长最为显著;Co元素的掺入改变了薄膜的紫外、绿光和蓝光发射,分析认为主要是Co元素的掺入量改变了薄膜的禁带宽度、氧错位缺陷浓度和锌填隙缺陷的浓度;Co元素掺杂浓度为5%时,薄膜的透过率超过90%.此外,探讨了不同波段光发射的可能机理.     

Deposition of conductive materials on textile and polymeric flexible substrates

This paper describes the study, analysis and selection of textile and similar materials to be used as flexible substrates for thin conductive film deposition, in the context of integrating electronics into textiles. Kapton^® polyimide was chosen as reference substrate material, was characterized regarding mechanical and electrical properties and was used as a basis for a comparison with several textile substrates. Samples were fabricated using physical vapour deposition (thermal evaporation) to deposit a thin layer of aluminium on top of Kapton and textile substrates. The measurement of electrical resistance of the thin aluminum films was carried out using the Kelvin method. To characterize the mechanical behaviour of the substrate and aluminum film, several mechanical tests were performed and results were compared between Kapton and these textile materials. The chemical composition of the textile substrates and aluminum films as well as the continuity of the films was characterized. This selection process identified the material that was closer to the behaviour of polyimide, a flexible, but non-elastic woven textile coated on both sides with PVC.     

Structure and dielectric properties of highly (100)-oriented PST thin films deposited on MgO substrates

High-quality Pb_0.4Sr_0.6TiO₃ (PST) thin films have been epitaxially grown on MgO (100) substrates at various substrate temperatures by the pulsed laser deposition (PLD) technique. Their crystalline phase structures and surface morphology were measured by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Their in-plane orientation was observed by the Phi scans on the (111) plane. Their dielectric properties were measured by a precision impedance analyzer. Results show that the perovskite phase was stable in PST thin film. The crystalline phase formation of the thin film depended on the deposition temperature. The phase formation ability and (100)-orientation of these films were increased with increasing deposition temperature. Both of the high tunabilities and low dielectric loss of the thin films show that the (100)-oriented PST is a potential material that can be used for tunable applications.     

Surface-enhanced Raman spectroscopy of the growth of ultra-thin organosilicon plasma polymers on nanoporous Ag/SiO2-bilayer films

A new method for the synthesis of thin bilayer films as surface-enhanced Raman spectroscopy (SERS) active substrates was developed which is based on the combination of plasma polymerization, plasma calcination and Ag-film deposition by means of physical vapor deposition. The surface morphology of prepared substrates was characterized by field emission scanning electron microscopy, atomic force microscopy and electrochemical impedance spectroscopy. These substrates lead to high surface enhancement factors proven by the spectroscopic analysis of adsorbed Trans-1,2 bis-(4-pyridyl) ethylene molecules. By this preparation technique, SERS-active films can be deposited on any substrate. The new SERS substrates were successfully applied to study the growth of ultra-thin hexamethyldisiloxane plasma polymer films. The Raman intensity of the CH-stretching vibration was studied as a function of the film thickness. The surface enhancement decreased sharply at about 20 nm. The resulting increase in the intensity of Raman peaks for thin adsorbed plasma polymer films was observed to be a combination of the electromagnetic enhancement mechanism and the high surface area increase of the rough Ag-surface.     

Fabrication and optical properties of Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3) thin films on Si substrates using the PLD method.

Epitaxial 0.67Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3)-0.33PbTiO(3) (PMN-PT) thin films with electro-optic effects were fabricated on (PMN-PT) thin films with electro-optic effects were fabricated on (La0(0.5)Sr0(0.5))CoO(3) (LSCO)/CeO(2)/YSZ-buffered Si(001) substrates using double-pulse excitation pulsed laser deposition (PLD) method with a mask placed between the target and the substrate. Epitaxial growth of PMN-PT thin films was undertaken using the two-step growth method of PMN-PT film. The PMN-PT seed layer was deposited at 500 degrees C on the LSCO/CeO(2)/YSZ/Si, which temperature was the same as that used for LSCO deposition. The PMN-PT thin films were deposited on the PMN-PT seed layer at 600 degrees C, which enables growth of high-crystallinity PMN-PT films with smooth surfaces. We obtained optimum fabrication conditions of PMNPT film with micrometer-order thickness. Resultant films showed high crystallinity with full width at half maximum (FWHM) = 0.73 deg and 1.6 mum thickness. Electro-optic properties and the refractive index value were measured at 633 nm wavelength using the prism coupling method. The obtained refractive index was 2.59. The electro-optic coefficients r(13) and r(33) were determined by applying the electrical field between a semitransparent, thin top electrode of Pt and a bottom LSCO electrode. The electro-optic coefficient was r(13) = 17 pm/V at transverse electric field (TE) mode and r(33) = 55 pm/V at transverse magnetic field (TM) mode.     

Dünne Schichten durch Deposition unter streifenden Einfall

Micro‐ and nanostructured thin films by Glancing angle deposition Physical vapour deposition under conditions of obliquely incident flux and limited adatom diffusion results in films with a columnar microstructure. These columns will be oriented toward the vapour source. An additional substrate rotation can be used to sculpt the columns into various morphologies (slanted and vertical posts, chevrons, screws or spirals). With this glancing angle deposition (GLAD) technique can prepared porous thin films with engineered structures from a variety of dielectric, semiconducting and metallic materials. The paper presents the In this paper the physical fundamentals of the GLAD technique are introduced, the production of micro‐ and nanostructures of different morphology on non‐patterned and patterned substrates is demonstrated and some possible applications of this new deposition technique are introduced.     

采用真空电弧源镀制纳米TiO2薄膜研究

在真空条件下利用真空电弧源在不同基底材料上镀制了TiO2薄膜.对影响镀膜过程和膜层质量的氧气工作压强和偏压等因素进行了研究.X射线衍射结构分析结果显示TiO2薄膜主要以锐钛矿相为主及少量的金红石相.对TiO2薄膜的物理性质、化学性质进行了初步检测.     

Influence of Deposition Pressure (O2) on the YBCO (Y123) Thin Films Prepared by Pulsed Laser Deposition

In this paper, the influence of oxygen pressure on film quality and superconducting properties of YBa₂Cu₃O_7?δ (YBCO-Y123) thin films prepared by Pulsed Laser Deposition (PLD) was investigated. For this purpose, YBCO thin films were deposited on polished LaAlO₃ (l00) (LAO) substrates at three different oxygen pressures (150, 200, and 250 mTorr). X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM) techniques were used to make comparative studies of film microstructure. Except for oxygen pressures, all other variables such as number of pulses, repetition rate, deposition temperature, heating and cooling rate, target-substrate distance, laser excitation energy, annealing temperature, and annealing pressure were fixed. For this fixed set of parameters, SEM, XRD analysis, and AC susceptibility measurements of these films revealed that the crystal structure quality and superconducting properties of YBCO thin films are optimum at the oxygen deposition pressure of 150 mTorr. As the deposition pressure increased, Y₂BaCuO₅ (Y211) phase peaks were seen in XRD patterns. The reason for this was believed to be caused by decreased concentration of CuO and BaO as determined by Energy Dispersive X-Ray Spectroscopy (EDX) of thin films.     

Ti/La_(0.7)Ca_(0.3)MnO_3/Pt结构器件中“负”电阻开关特性研究

以Pt/Ti/SiO2/Si为衬底,制备了具有电阻转变特性的Ti/La0.7Ca0.3MnO3(LCMO)/Pt结构器件.X射线衍射分析表明LCMO薄膜呈纳米晶或非晶态,扫描电子显微镜及原子力显微镜分析表明LCMO薄膜表面平整、光滑致密.电学测试结果表明Ti/LCMO/Pt结构具有明显的双极型"负"电阻转变特性,低电阻态的导电过程为空间电荷限制电流机制,高电阻态的导电过程为Poole-Frenkel发射机制.利用氧化还原反应的随机性和TiOx中间层空间分布的不均匀性,定性地解释了高电阻态的不稳定性以及电流-电压曲线上的电流突变现象.     

Structural, dielectric and optical properties of Ba(Ti, Zr)O3 thin films prepared by chemical solution deposition

Ba(Ti_0.95Zr_0.05)O₃ (BTZ) thin films grown on Pt/Ti/SiO₂/Si(100) substrates were prepared by chemical solution deposition. The structure and surface morphology of BTZ thin films has been studied by X-ray diffraction (XRD) and scanning electron microscope (SEM). At 100 kHz, the dielectric constant and dissipation factor of the BTZ film are 121 and 0.016, respectively. The ellipsometric spectrum of the BTZ thin film annealed at 730 °C was measured in the range of wavelength from 355 to 1700 nm. Assuming a five-layer model (air/surface roughness layer/BTZ/interface layer/Pt) for the BTZ thin films on platinized silicon substrates, the optical constant spectra (refractive index n and the extinction coefficient k) of the BTZ thin films were obtained.     

Preparation of (001)-oriented Pb(Zr,Ti)O3 thin films and their piezoelectric applications

Preparation of (001)-oriented Pb(Zr,Ti)O(3) (PZT) thin films and their applications to a sensor and actuators were investigated. These thin films, which have a composition close to the morphotropic phase boundary, were epitaxially grown on (100)MgO single-crystal substrates by RF magnetron sputtering. These (001)-oriented PZT thin films could be obtained on various kinds of substrates, such as glass and Si, by introducing (100)-oriented MgO buffer layers. In addition, the (001) oriented PZT thin films could be obtained on Si substrates without buffer layers by optimizing the sputtering conditions. All of these thin films showed excellent piezoelectric properties without the need for poling treatment. The PZT thin films on the MgO substrates had a high piezoelectric coefficient, d(31), of -100 pm/V, and an extremely low relative dielectric constant, epsilon(r), of 240. The PZT thin films on Si substrate had a very high d(31) of -150 pm/V and an epsilon(r) = 700. These PZT thin films were applied to an angular rate sensor with a tuning fork in a car navigation system, to a dual-stage actuator for positioning the magnetic head of a high-density hard disk drive, and to an actuator for an inkjet printer head for industrial on-demand printers.     

连续式离子层吸附与反应法沉积CuSCN薄膜及其微观结构、光学特性研究

采用乙二醇作溶剂,以连续式离子层吸附与反应法(SILAR)实现硫氰酸亚铜(CuSCN)薄膜在ITO、TiO2薄膜以及玻璃衬底上的沉积.通过X射线衍射、扫描电镜和紫外-可见光透过谱等手段表征薄膜结晶性、表面和断面微观形貌以及光学特性.结果表明,衬底以及溶剂性质均对SILAR法薄膜沉积过程存在重要影响.ITO衬底上获得的CuSCN薄膜更为致密,呈结晶态,而TiO2薄膜衬底上的CuSCN薄膜主要由颗粒组成,为非晶态.随沉积次数增加,薄膜表面粗糙度增大,光学透过率逐渐下降.在优化条件下(ITO衬底,20次沉积循环),所得CuSCN薄膜表面致密均匀,可见光透过率约60%.