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Tr anslator Xian Xiaomin 《电讯技术》1990,(4)
木文首先介绍了全微波集成电路(MMIC)化接收机的构成,然后讨论了低噪声放大器、宽带相移网络的镜像抑制型混频器、压控振荡器、模拟分频器、倍频器的MMlC电路设计和试验结果,以及利用这些MMIC电路构成镜像抑制型变频器和锁相环型本振,研制全MMIC化接收机的实践. 相似文献
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MMIC—单片式微波集成电路 总被引:1,自引:0,他引:1
由于近年来半导体制造技术的发展,例如氮化物自我排列工艺的成熟,离子掺入控制水平的提高,所以才能生产出MMIC器件。在这种器件内,电阻器采用适合高频率应用的薄膜电阻器,且制作在芯片上,使器件内部的各零件之间几乎无连线,电路感抗可降到最低值,提高了MMIC的高频特性、MMIC工作频率实际可达18GHz以上,频宽高达4GHz。它的用途很广,可应用于所有的发射机或接收机的射频和中频电路。下面分5个方面介绍MMIC。1.典型的MMIC放大电路MMIC放大电路如图1所示,虚线框内的元件都包含在MMIC器件中。为了使V1、V2晶体管具有确… 相似文献
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3 MMIC技术
在芯片上由GaN HEMT有源器件和无源元件(如MIM电容、薄膜电阻和衬底上的通孔等)所组成的微波单片集成电路(MMIC)和GaN HEMT分立晶体管几乎同步发展,MMIC技术的发展使GaNHEMT器件的电路应用能减少体积和质量,适应高频率的需求和批量生产.目前4英寸(1英寸=2.54 cm)圆片级GaN MMIC加工线已经成熟,GaN MMIC的工作频率已覆盖微波到3 mm波段,GaN MMIC的性能向高效率、高功率、宽频带和多功能集成的方向发展. 相似文献
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MMIC单片微波集成电路的原理及应用 总被引:1,自引:0,他引:1
介绍了MMIC单片微波集成电路的特点和分类,分析了其内部电路原理,列举了几种常用的MMIC的性能指标,给出了典型应用电路,最后就使用中的问题提出了几点建议。 相似文献
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本文借鉴低频电路中用电流传送器综合低频有源电感的思路提出一种设计微波有源电感的新方法.根据这种方法.获得了八种微波有源电感的电路结构.并且实际设计制作了一个小型化低损耗的芯片有源电感.这种方法非常适合于设计MMIC微波有源电感或有源滤波器. 相似文献
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Zhenqiang Ma Mohammadi S. Liang-Hung Lu Bhattacharya P. Katehi L.P.B. Alterovitz S.A. Ponchak G.E. 《Microwave and Wireless Components Letters, IEEE》2001,11(7):287-289
We report the design and fabrication of a compact microwave monolithic integrated circuit (MMIC) amplifier, which demonstrates high output power at X-Band. A single-stage power amplifier is demonstrated, with a double-mesa type SiGe/Si HBT as the active device and spiral inductors and MIM capacitors as lumped passive components. At 8.4 GHz, a linear gain of 8.7 dB, an output power at peak efficiency of 23 dBm, and a saturated output power Psat of 25 dBm, are measured. To our knowledge, this is the first MMIC X-Band power amplifier using SiGe/Si HBTs 相似文献
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通过分析InGaP/GsAsHBT器件的热学和电学特点,结合HBT大功率放大器芯片在技术性能、稳定性、可靠性及尺寸等方面的要求,通过优化设计HBT功率器件单元和匹配电路,开发了一个大功率、高效率、小尺寸的ISM波段功率放大器单片集成电路。该三级放大器的各级器件单元的发射极面积分别为320μm2,1280μm2,5760μm2,芯片内部包括了输入、输出50Ω匹配电路,面积仅为1.9mm×2.1mm。放大器采用5V单电源供电,在2.4~2.5GHz频率范围内线性增益为27dB,2dB增益压缩点输出饱和功率达到37dBm,功率附加效率为46%。 相似文献
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Yu M. Matloubian M. Petre P. Hamilton L.R. Bowen R. Lui M. Sun H.-C. Ngo C.M. Janke P. Baker D.W. Robertson R.S. 《Solid-State Circuits, IEEE Journal of》1999,34(9):1212-1218
In this paper, we report on the development of W-band monolithic microwave integrated circuit (MMIC) power amplifiers using 0.1-μm AlInAs/GaInAs/InP high electron mobility transistor (HEMT) technology and finite-ground coplanar waveguide (FGCPW) designs. In the device modeling, the Angelov nonlinear HEMT model was employed to predict the large signal performance of the device, and the results were validated by using state-of-the-art vector load-pull measurements. A two-stage single-ended W-band FGCPW MMIC using a 150-μm-wide HEMT as the driver and a 250-μm-wide HEMT for the output stage was designed, fabricated, and tested. The MMIC amplifier demonstrates a maximum output power of 18.6 dBm with 18.2% power-added efficiency and 10.6 dB associated gain at 94 GHz. This result is the best output power to date reported from an InP-based MMIC using FGCPW design at this frequency 相似文献
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Hong-Zhi Liu Che-Hung Lin Chen-Kuo Chu Hou-Kuei Huang Mau-Phon Houng Ching-Hsueh Chang Chang-Luen Wu Chian-Sern Chang Yeong-Her Wang 《Microwave and Wireless Components Letters, IEEE》2006,16(6):330-332
In this letter, the design of a self-bias 1.8-mm AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor with a compact source capacitor for operation in Ku-band frequency is described. Based on the proposed device, a self-bias Ku-band 1-W two-stage power amplifier monolithic microwave integrated circuit (MMIC) is also demonstrated. Under a single bias condition of 8 V and 630 mA, the self-bias MMIC possesses 14.2-dB small-signal gain, 30.2-dBm output power at 1-dB gain compression point with 19.2% power added efficiency and 31.3-dBm saturated output power with 22.5% power added efficiency at 14GHz. With the performance comparable to the dual-bias MMIC counterpart, the proposed self-bias MMIC is more attractive to system designers on very small aperture terminal applications. 相似文献
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突破了GaN MMIC功率放大器的设计、制造、测试等关键技术,研制成功X波段GaN MMIC功率放大器。设计及优化了电路拓扑结构及电路参数,放大器芯片采用了国产外延材料及标准芯片制作工艺。单片功率放大器包含两级放大电路,采用了功率分配及合成匹配电路,输入输出阻抗均为50Ω。制作了微波测试载体及夹具,最终实现了X波段GaN MMIC功率放大器微波参数测试。在8.7~10.9 GHz频率范围内,该功率放大器输出功率大于16 W,功率增益大于14 dB,增益波动小于0.4 dB,输入驻波比小于2∶1,功率附加效率大于40%,带内效率最高达52%。 相似文献
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研制了一款60~90 GHz功率放大器单片微波集成电路(MMIC),该MMIC采用平衡式放大结构,在较宽的频带内获得了平坦的增益、较高的输出功率及良好的输入输出驻波比(VSWR)。采用GaAs赝配高电子迁移率晶体管(PHEMT)标准工艺进行了流片,在片测试结果表明,在栅极电压为-0.3 V、漏极电压为+3 V、频率为60~90 GHz时,功率放大器MMIC的小信号增益大于13 dB,在71~76 GHz和81~86 GHz典型应用频段,功率放大器的小信号增益均大于15 dB。载体测试结果表明,栅极电压为-0.3 V、漏极电压为+3 V、频率为60~90 GHz时,该功率放大器MMIC饱和输出功率大于17.5 dBm,在71~76 GHz和81~86 GHz典型应用频段,其饱和输出功率可达到20 dBm。该功率放大器MMIC尺寸为5.25 mm×2.10 mm。 相似文献
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介绍了一种新研制的W频段固态GaN功率放大器毫米波源,给出了系统组成与工作原理,提供了其主要部件W频段固态Gunn驱动源、W频段波导-微带转换器、主放大器芯片基本性能及实验测试结果。该固态毫米波源工作频率94 GHz,输出连续波功率大于300 mW,线性增益10 dB,附加效率(PAE)大于16%。在W频段固态毫米波源研制过程中,其单片微波集成电路(MMIC)功率放大器半导体材料选择经历了GaAs、InP到GaN演变,结果清楚表明, W频段毫米波源的GaN MMlC功率放大器输出功率、增益、效率、高温性能要优于其他固态MMIC功率放大器性能。 W频段大功率固态GaN MMlC技术将在毫米波领域带来新的技术革命和应用。 相似文献
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Wu C.S. Pao C.K. Yau W. Kanber H. Hu M. Bar S.X. Kurdoghlian A. Bardai Z. Bosch D. Seashore C. Gawronski M. 《Microwave Theory and Techniques》1995,43(2):257-266
We have demonstrated very good performance, high yield Ka-band multifunctional MMIC results using our recently developed 0.25-μm gate length pseudomorphic HEMT (PHEMT) manufacturing technology. Four types of MMIC transceiver components-low noise amplifiers, power amplifiers, mixers, and voltage controlled oscillators-were processed on the same PHEMT wafer, and all were fabricated using a common gate recess process. High performance and high producibility for all four MMIC components was achieved through the optimization of the device epitaxial structure, a process with wide margins for critical process steps and circuit designs that allow for anticipated process variations, resulting in significant performance margins. We obtained excellent results for the Ka-band power amplifier: greater than 26 dBm output power at center frequency with 4.0% standard deviation over the 3-in. wafer, 2-GHz bandwidth, greater than 20 pet-cent power-added efficiency, over 8 dB associated gain, and over 10 dB linear gain. The best performance for the Ka-band LNA was over 17 dB gain and 3.5 dB noise figure at Ka-band. In this paper, we report our device, process, and circuit approach to achieve the state-of-the-art performance and producibility of our MMIC chips 相似文献
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GaAs单片集成电路具有体积小、质量轻和可靠性高等特性,已经成为微波领域重要的器件。采用MBE技术生长出双面掺杂AlGaAs/InGaAs PHEMT结构的外延材料,研制了高效率的GaAs PHEMT器件,S波段功率附加效率大于55%。建立了基于EEHEMT的大信号模型,利用ADS软件搭建了有耗匹配的二级放大电路拓扑结构,进行最佳效率匹配,得到优化电路。采用4英寸(1英寸=2.54cm)GaAs0.35μm标准工艺研制了AlGaAs/InGaAs/GaAsPHEMT MMIC电路,测试结果表明,在测试频率为2.2~3.4GHz,测试电压VDS为10V时,输出功率大于12W,功率增益大于22dB,功率附加效率大于40%。 相似文献
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A high-linearity and high-efficiency MMIC power amplifier is proposed that adopts a new on-chip adaptive bias circuit, which simultaneously improves efficiency at the low output power level and linearity at the high output power level. The intelligent W-CDMA power amplifier using the adaptive bias circuit extends the maximum linear output power of 0.6 dB and exhibits an improvement of average power usage efficiency of 1.85 times. 相似文献