Na2xCa1-xBi4Ti4O15介电陶瓷的制备及其介电性能的研究

采用固相烧结法制备了Na 1掺杂的CaBi4Ti4O(15CBT)铋系层状钙态矿无铅介电陶瓷。利用XRD、SEM和宽频LCR数字电桥分析了掺杂量、烧结温度等因素对CBT陶瓷晶相、微观形貌及介电性能的影响。研究表明,采用860℃预烧,保温3小时,1150℃终烧,保温1h的烧结工艺,Na2xCa1-xBi4Ti4O15(x=8mol%)的介电陶瓷致密性好、结晶性好,具有良好的介电性能。     

Nb5+掺杂改性CaBi4Ti4O15压电陶瓷的研究

采用传统固相烧结法,制备了CaBi4Ti(1-x)NbxO1(5x=0.00-0.05,CBT-N)系铋层状结构无铅压电陶瓷。研究了Nb5+掺杂对CBT压电陶瓷压电与介电性能的影响。研究结果表明:添加Nb5+离子,改善了CBT陶瓷的烧结特性,提高了瓷体的致密度。Nb2O5的引入降低了CBT系列陶瓷的介质损耗,改善了陶瓷的压电与介电性能。当掺入量x=0.04(CaBi4Ti0.96Nb0.04O15)时制备的CBT基铋层状压电陶瓷具有优异的压电性能:d33=14pC/N,Qm=3086,εr=212,tanδ=0.0041,kt/kp=1.681。     

中温烧结(Ba、Sr)TiO3电容器陶瓷

采用常规电容器陶瓷制备工艺 ,借助正交设计实验法研究了在配方对中温烧结 (12 0 0℃ ) (Ba,Sr)TiO3 (BST)基陶瓷介电性能的影响 ,得到了影响BST基陶瓷介电性能的主次因素以及各因素水平影响其性能的趋势 ,同时得到介电常数最大的配方和介质损耗最小的配方 ,得到了综合性能最佳的适合单片电容器和独石电容器的中温烧结 (12 0 0℃ )BST基陶瓷基方 ,它具有中介 (ε≥ 2 195 )、低损耗 (tanδ≤ 0 .0 15 5 )和高耐压 (大于 4 .5Mv/m)。探讨了各组分对BST基陶瓷介电性能的影响机理 ,为研制中温烧结单片电容器和独石电容器陶瓷提供了依据     

BaTi4O9介电陶瓷的低温烧结

研究液相多元添加对BaTi4O9介质陶瓷的烧结和介电性能的影响.通过添加(CuO和V2O5)烧结助剂来达到降低烧结温度的效果,并且使其保持较好的高频性能.实验结果表明在添加合适的烧结助剂下,烧结温度为1180℃时,BaTi4O9介电陶瓷在1MHz下的介电性能:ε=41.2,tan δ=5,τ=82 ppm/℃.基本保持了良好的介电性能.     

低温烧结Mg4Nb2O9微波介质陶瓷

研究了V2O5对Mg4Nb2O9陶瓷的烧结温度、相结构和微波介电性能的影响.结果表明,添加1％～8％的V2O5,能使该陶瓷的烧结温度降低到1000～1050℃而对其微波介电性能的影响很小,材料的主晶相为有序型刚玉结构的Mg4 Nb2O9,存在Mg4Nb2O6和Mg5Nb4O15杂相而没有检测到V2O5的存在.陶瓷的密度对微波介电性能起着决定性作用,介电常数e1与密度成线性关系(在99.99％的置信限内,其相关系数为0.98252),Q·f值与密度的关系较复杂.添加1％的v2O5,将Mg4Nb2O9陶瓷的烧结温度降低到了1050℃,得到了εr=12.72,Q·f=151040GHz的优异性能.     

CuO-B2O3掺杂对Ba4Sm9.33Ti18O54陶瓷烧结性能及微波介电性能的影响

研究了CuO-B2O3助剂对Ba4Sm9.33Ti18O54陶瓷的烧结性能和介电性能的影响,结果表明:通过共添加CuO-B2O3助剂(CB),陶瓷的烧结温度可以从1350℃降低到1050℃左右,当CB添加量达到10％时,产生第二相Ba2Cu(BO3)2,研究了CB的添加,对介电性能的影响,当CB的添加量为1wt％时,有以下微波介电性能ε=62.7,Q·f=4 270 GHz,τf=-11.1 ppm/℃.     

富含CuO的CaCu_3Ti_4O_(12)陶瓷显微结构和介电性能的研究

CaCu3Ti4O12陶瓷具有巨介电性,有助于电容器、存储器等电子器件向高性能化和尺寸微型化的进一步发展。研究了富含CuO对CaCu3Ti4O12陶瓷的显微结构和介电性能的影响,结果表明:富含CuO可促进CaCu3Ti4O12陶瓷晶粒的长大和提高均匀性,富含CuO有利于增加CaCu3Ti4O12陶瓷的介电性能的稳定性,且介电性能的稳定性跟陶瓷晶粒的均匀性有着一定的关系。     

钽掺杂对钛酸钡基陶瓷介电性能影响的研究

研究了微量钽掺杂对钛酸钡基陶瓷介电常数、介电损耗以及温度稳定性等介电性能的影响.利用XRD、SEM等现代分析手段分析了材料的显微结构,分析了显微结构与材料介电性能的关系,得到了性能较为优良的电容器基料配方.     

熔盐法制备Bi4Si3O12陶瓷及其介电性能研究

以Bi2O3和SiO2为原料,利用NaCl-Na2SO4熔盐系统,在850℃保温3 h制成粉体样品,使用XRD对粉体物相进行表征,确定粉体为纯的Bi4Si3O12,然后将该粉体压片烧成Bi4Si3O12陶瓷.通过SEM和阻抗分析仪对陶瓷微观形貌和介电性能进行了分析,研究烧成温度、保温时间对硅酸铋陶瓷介电性能的影响.研究...     

制备工艺对BNBT陶瓷介电性能的影响

BNT(BaO-Nd2O3-TiO2)系统陶瓷是一种介电性能优良的陶瓷材料.在BNT中添加一定量的Bi2O3,可以得到介电性能更优的BNBT(BaO-Nd2O3-Bi2O3 -TiO2)陶瓷.该文分别研究了球磨时间、烧结温度和保温时间对BNBT陶瓷介电性能的影响.结果表明:当球磨时间为10 h、烧结温度为1160 ℃、保温时间为9 h时,BNBT陶瓷的介电性能为:介电常数ε=99.8281,介电损耗tanδ=2.65×10-4,介电常数温度系数αε≤±30 ppm/℃.     

Sm掺杂对Ba_4La_(19.33)Ti_(18)O_(54)陶瓷结构和介电性能的影响分析

主要研究了不同Sm掺杂浓度对Ba4La19.33Ti18O54陶瓷的微波介电性能和微观结构的影响。首先利用常规固相反应技术制备了Sm含量y分别为0.0,0.1,0.3,0.5和0.7的五种Ba4(La1-ySmy)9.33Ti18O54陶瓷样品;室温下在0.3～3.0GHz频率范围内,利用网格分析仪测量了这些样品的介电常数和介电损耗因子;结果表明随着Sm掺杂含量的增大,样品介电损耗明显减小,而介电常数只有微小减少。当Sm掺杂含量y=0.5时,样品的介电性能最好。此外,还利用X射线衍射仪和扫描电子显微镜研究了样品的微观结构及随微波介电性能的变化。     

Enhanced bending strength and microwave dielectric properties of Li2MgTi3O8 ceramics by adding Si3N4 reinforcing phase

In the 5G era, the dielectric materials used in microwave electronic components must have not only have good microwave dielectric characteristics but also excellent structural characteristics. Li₂MgTi₃O₈ (LMT) ceramics have excellent microwave dielectric properties; however, their low bending strength limits their further applications in the 5G era. In this work, the dielectric properties and bending strength of LMT ceramics were optimized by the addition of Si₃N₄ reinforcing phase using a solid-phase method, and the effects of Si₃N₄ addition on the sintering properties, microscopic structure, crystalline phase, dielectric properties and bending strength of ceramics were investigated. The X-ray diffraction pattern indicates that all ceramics exhibit spinel structure. Combined with the phenomenon of grain reduction in the SEM graph, it indicates that the addition of Si₃N₄ can inhibit the grain growth and achieve the purpose of fine-grain strengthening. The dispersion enhancement of second phase particles is also one of the reasons for the increase of bending strength. LMT ceramics doped with 0.5 wt% Si₃N₄ exhibited the maximum bending strength after sintering at 1050 °C for 4 h, which was 76.97% higher than that of pure LMT ceramics. In addition, the ceramics exhibited outstanding dielectric properties: a dielectric constant of 23.20, quality factor of 49344 GHz, and temperature coefficient of ?5.90 ppm/°C. The high bending strength and good microwave dielectric properties indicate that Si₃N₄-added LMT ceramics can be effectively applied in the 5G era.     

CaCu3-xMnxTi4O12陶瓷的介电性能研究

本文利用固态反应法制备了CaCu3-xMnxTi4O12(x=0,0.2,0.4,0.6,0.8,1.0)陶瓷,并分析探讨了MnO添加量对其介电性能的影响。研究结果表明,MnO的添加有助于CaCu3Ti4O12相生成,且在高MnO添加的情况下所得陶瓷晶粒尺寸较小。MnO的添加对CaCu3Ti4O12的介电性能有非常不好的影响,少量的添加就会导致其介电常数由10000多降至只有数百。在1000Hz前MnO的添加会使陶瓷的介电损耗大幅上升,这表明MnO添加有降低电阻的效果。     

Microwave dielectric properties of low temperature fired Ba5Nb4O15 ‐ BaWO4 ceramics supplemented with their own nanoparticles for LTCC applications

Polycrystalline Ba₅Nb₄O₁₅ (BNO) ‐ BaWO₄ (BWO) composite ceramics are prepared by adding their own nanoparticles as a sintering aid. The prepared samples exhibited the maximum relative density of 98.2% at 900°C. The complex dielectric response of these composite ceramics are analysed by Havriliak ‐ Negami (HN) equation. The BNO ‐ BWO composite added with x=3 wt% of their nanoparticles, fired at 900oC displayed the best microwave dielectric properties; εr=39 and Q×f0=59.8 THz at 9.44 GHz. The obtained results of BNO ‐ BWO composite makes this material as a potential candidate for LTCC applications.     

Enhanced electrical properties in Nd and Ce co-doped CaBi4Ti4O15 high temperature piezoceramics

Lead-free piezoelectric material with excellent piezoelectric properties and high Curie temperature is necessary for practical applications. In this work, (Nd, Ce) co-doped CaBi₄Ti₄O₁₅ (CBT) ceramics were prepared by the conventional solid-state reaction technique. The effect of (Nd, Ce) co-doping on the structure and resulting electrical properties of CBT ceramics was systematically investigated. The optimized comprehensive performances were obtained at x?=?0.075 with a large piezoelectric coefficient (19 pC/N), a low dielectric loss (0.073%) and a high Curie temperature (794?°C). More importantly, the ceramic also maintained a very high resistance and a low dielectric loss even at 400?°C (ρ?=?2.5?×?10⁸ Ω?cm, tan δ?=?1.96%) and the d₃₃ showed no sign of waning after annealed at 400?°C, which shows great potential for high temperature piezoelectric device applications. Related mechanisms for the enhancement of electrical properties were discussed.     

微波介质陶瓷的界面特性及其对介电性能的影响

详细地总结了界面的偏析、扩散和润湿性对微波介电性能的影响机理。并评述了粉末的初始状态、烧结工艺、添加剂(掺杂)和烧结方法等因素对材料界面特性的影响，进而影响到材料介电性能的研究进展。最后指出了在微波介质陶瓷界面研究领域面临的问题及今后的发展方向。     

机械球磨时间对液相烧结Ba2Ti3Nb4O18陶瓷材料结构和性能的影响

Ba2Ti3Nb4O18是BaO-TiO2-Nb2O5体系中一种新型的介质材料,具有优良的微波介电性能.为满足低温共烧陶瓷技术(low temperature cofired ceramics,LTCC)对微波介质陶瓷材料的低温烧结要求,实现在900℃与银电极共烧,添加了质量分数为5%的ZnO-B2O3玻璃作助融剂,并研究了机械球磨时间对粉料粒径、陶瓷样品的烧结密度、显微结构和介电性能的影响.机械球磨6h的粉体粒径适中(约90nm),用该粉料制备的陶瓷样品可以在900℃致密烧结(大于理论密度的95%).且高频介电性能为(1MHz下测试):介电常数εt≈36,介电损耗tanδ≈2× 10-4,电容温度系数αc≈2.5×10-6/℃.同时微波介电性能良好:εt=33.3,品质因数和频率的乘积Qf=14274GHz.可与银电极共烧结作为LTCC介质瓷料.     

The microwave dielectric properties and crystal structure of low temperature sintering LiNiPO4 ceramics

The LiNiPO₄ ceramic for the LTCC technology was prepared via the traditional solid-state reaction route and its dielectric properties were investigated for the first time. The best dielectric properties of LiNiPO₄ ceramics with a ε_r of 7.18, Q×f value of 27,754?GHz and τ_f of ?67.7?ppm/°C were obtained in samples sintered at 825?°C for 2?h. Rietveld refinement was firstly employed to study the crystal structure and dielectric properties of LiNiPO₄ ceramics. Unfortunately, the relatively large negative τ_f was unfavorable to practical applications. Therefore, we introduced TiO₂, which possessed a considerable positive τ_f, to obtain a desired τ_f value. The prepared LiNiPO₄ ceramics with 15?wt% TiO₂ sintered at 900?°C for 2?h exhibited excellent dielectric properties of ε_r～11.49, Q×f～10,792?GHz, τ_f～?2.8?ppm/°C. The Ag co-fired experiments confirmed the excellent chemical compatibility with LiNiPO₄-TiO₂ ceramics which might be potential dielectric LTCCs for high frequency applications.     

Chemical bond characteristics and infrared reflectivity spectrum of a novel microwave dielectric ceramic CaIn2O4 with near-zero τf

Orthorhombic-structured CaIn₂O₄ ceramics with a space group Pca2₁ were synthesized via a solid-state reaction method. A high relative density (95.6 %) and excellent microwave dielectric properties (ε_r ～11.28, Qf = 74,200 GHz, τ_f ～ ?4.6 ppm/°C) were obtained when the ceramics were sintered at 1375 °C for 6 h. The dielectric properties were investigated on the basis of the Phillips–Van Vechten–Levine chemical bond theory. Results indicated that the dielectric properties were mainly determined by the InO bonds in the CaIn₂O₄ ceramics. These bonds contributed more (74.65 %) to the dielectric constant than the CaO bonds (25.35 %). Furthermore, the intrinsic dielectric properties of the CaIn₂O₄ ceramics were investigated via infrared reflectivity spectroscopy. The extrapolated microwave dielectric properties were ε_r ～10.12 and Qf = 112,200 GHz. Results indicated that ion polarization is the main contributor to the dielectric constant in microwave frequency ranges.