GaAs和（Cs，O）／GaAs热处理工艺的XPS研究

用X射线光电子能谱(XPS)研究了GaAs(100)面基片的化学清洗、热净化、(Cs，O)激活后加热的处理效果。GaAs的氧化过程是：首先，As氧化为低价态，然后Ga被氧化，再就是As氧化为高价。确保样品从刻蚀清洗到超高真空环境中，表面Ga没有被氧化，就可在较低的温度热净化，获得As稳定的且原子级清洁的GaAs表面。净化后GaAs表面Ga含量越高，则(Cs，O)激活后形成氧化物越多，从而形成了界面势垒，使电子逸出概率降低。     

（Cs,O）／GaAs热退火的变角XPS定量研究

用变角X射线光电子能谱(XPS)技术分析了GaAs光阴极的表面及其在热退火后的效应,首次定量地计算了(Cs,O)/GaAs系统的表面(Cs,O)层和界面(Ga,As)弛豫层的厚度和组分.(Cs,O)/GaAs系统在625～650℃的热退火后,(Ga,As)驰豫层厚度减薄,Ga,As的原子浓度增大;且消除了O与As的化学连接.     

ZnSe光学薄膜对GaAs表面特性的影响

GaAs基半导体激光器芯片在空气中解理后,解理腔面会被空气氧化形成腔面缺陷,在腔面形成的缺陷严重影响了器件的寿命.用GaAs衬底表面模拟半导体激光器的解理腔面,研究了不同的光学薄膜对GaAs表面特性的影响.研究结果表明暴露在大气中的GaAs表面会形成Ga2O3、As2O3和As2O5缺陷.在表面镀含氧光学膜的GaAs表面上会形成少量Ga2O3缺陷,不形成As2O3和As2O5缺陷,在表面镀ZnSe光学薄膜的GaAs表面没有形成Ga2O3缺陷,也没有形成As2O3和As2O5缺陷.在GaAs表面上蒸镀ZnSe光学薄膜能有效地抑制GaAs表面缺陷的形成,提高半导体激光器的寿命.     

GaAs光电阴极制备过程中多信息量测试技术研究

研制了一套基于现场总线技术的GaAs光电阴极多信息量测试系统，该系统可在线测试和保存阴极制备过程中的大部分信息量，如激活系统的真空度、阴极光电流、光谱响应曲线、Cs源和O源电流等。实验测试了GaAs光电阴极加热净化过程中真空度随温度的变化曲线，分析发现，高温净化时有几个真空度下降较快的区域，为160℃～280℃、400℃～500℃、570℃～600℃，分别是由于．AsO的脱附和水分的蒸发、As2O3分解和Ga2O脱附、GaAs和Ga2O3的分解所致，低温净化真空度在370℃后下降较快，这是由于吸附在阴极表面的Cs脱附速度加快造成的。实验还测试了激活过程中多种信息量的变化，发现了真空度和光电流随Cs源和O源电流的变化规律，这些大大方便了对激活工艺进行深入细致的分析研究。     

用变角XPS定量分析研究GaAs光电阴极激活工艺

用变角X射线光电子能谱 (XPS)技术分析了GaAs光电阴极的激活工艺 ,定量计算了阴极表面激活层和界面氧化层的厚度和组成。界面氧化物是由于O原子穿过激活层 ,扩散到GaAs与 (Cs,O)激活层的界面上而形成的。导入过量O会增加O GaAs界面层的厚度 ,而对 (Cs,O)激活层厚度影响较小。在激活过程中 ,严格控制和减少每次导入的O量是减少界面氧化层厚度 ,提高灵敏度的重要途径。在第一步激活后的阴极样品 ,通过较低温度的加热和再激活 ,能获得比第一步高出 30 %的光电灵敏度的原因是较低温度加热减少了界面氧化层的厚度和界面势垒     

用变角XPS定量分析研究GaAs光电阴极激活工艺

用变角X射线光电子能谱（XPS）技术分析了GaAs光电阴极的激活工艺，定量计算了阴极表面激活层和界面氧化层的厚度和组成。界面氧化物是由于O原子的穿过激活导，扩散到GaAs与（Cs，O）激活层的界面上而形成的，导入过量O会增加O－GaAs界面层的厚度，而对（Cs,O）激活层厚度影响较小，在激活过程中，严格控制和减少每次导入的O量是减少界面氧化层厚度，提高灵敏度的重要途径，在第一步激活后的阴极样品，通过较低温度的加热和再激活，能获得比第一步高出30％的光电灵敏度的原因是较低温度加热减少了界面氧化层的厚度和界面势垒。     

GaAs基片高温加热清洗过程中残气脱附的研究

为了优化GaAs基片的加热清洗工艺,获得原子级清洁表面,用四极质谱仪研究了GaAs基片高温加热清洗过程中常见气体及Ga、As元素的脱附规律.研究结果表明:常见气体(H2、H2O、N2、CO、CO2、Ar、CxHyOz)在100℃左右开始大量脱附;Ga、As元素主要以单质和氧化物的形态脱附,其脱附的温度存在两个峰值,分别是300℃和600℃;研究还发现真空环境中某些常见气体的含量会影响到Ga、As元素的脱附形式,当H2含量较高时,一部分As会以AsH3的形态脱附,当H2含量较低时,As基本以单质的形态脱附.经过多次实验及对实验结果的分析,最终确定了高温加热清洗的升温曲线及加热清洗的最高温度,获得了较为理想的原子级清洁表面.     

NEA GaN和GaAs光电阴极激活机理对比研究

本文结合激活过程中光电流变化规律和成功激活后阴极表面模型,研究了NEA CaN和GaAs光电阴极激活机理的异同.实验表明:NEA CaN激活过程中光电流不象GaAs那样按近似指数规律的包络慢速循环上升,而是在约1min之内就可达到峰值,Cs/O激活时引入O后光电流的增长幅度不大,NEA特性仅在Cs激活时即可获得.GaAs光电阴极激活过程中O的引入是获得NEA特性的必要条件,也是真空能级下降的重要转折点,O引入后光电流幅值有较大幅度的增长.采用双偶极层模型可以解释GaN和GeAs光电阴极Cs/O激活后表面势垒的降低,但偶极层在降低表面势垒的程度方面有较大差异,CaN光电阴极降得更低.     

GaAs光电阴极智能激活研究

研制了一套基于计算机控制的GaAs光电阴极智能激活系统,该系统可在计算机控制下严格按照标准工艺对GaAs光电阴极进行智能激活,并可在线测量阴极的光谱响应曲线.利用该系统分别进行了智能激活和人工激活实验,采集了激活过程中的光电流变化曲线,分析发现,和智能激活过程相比,由于人工激活过程出现了误操作,相邻光电流峰值间的差值下降很快,Cs、O交替的次数也较少.人工激活过程中Cs、O交替6次,光电流最大值为43μA,激活后GaAs光电阴极的积分灵敏度为796μA/lm.智能激活过程中Cs、O交替9次,光电流最大值为65μA,激活后GaAs光电阴极的积分灵敏度为1100μA/lm.     

GaAs/GaAlAs光阴极的XPS深度剖析

GaAs光阴极是一种高性能光阴极,它由GaAs/GaAlAs外延片和玻璃基底粘接而成.为了了解外延片的元素深度分布和各层的均匀性,利用X射线光电子能谱和Ar离子刻蚀来进行深度剖析.结果表明,由于送样过程中曾短暂暴露大气,因而GaAs光阴极表面吸附有少量C、O污染,并且GaAs表层被氧化;GaAs层中的Ga、As元素含量非常均匀,约为3∶2,富Ga;而G aAlAs层中的Ga、Al和As含量比约为1∶1∶2,Ga略少于Al,但稍大于Ga0.42Al0.58As的比例.Ar离子枪采用3kV、1μA模式,刻蚀面积1 mm×1 mm,结合C-V测试得到的各层厚度数据,可以计算出该模式下各层的刻蚀速率,GaAs层的刻蚀速率约为1.091 nm/s,而GaAlAs层约为0.790 nm/s,并且推算出GaAs的溅射产额为4.00,GaAlAs的溅射产额为2.90.     

Comparison between gradient-doping GaAs photocathode and uniform-doping GaAs photocathode

We compared two reflection-mode negative electron affinity (NEA) GaAs photocathode samples that are grown by molecular beam epitaxy with p-type beryllium doping. One sample is uniform doping, and another is gradient doping. Experimental curves of spectral response sensitivity and quantum efficiency are obtained. The thicknesses of the two cathodes are both 2.6 microm. The integrated sensitivity of the uniform doping one is 1966 microA/lm, and that of the gradient-doping one is 2421 microA/lm. The escape probability and diffusion length are fitted from the spectral response curves. For the uniform-doping sample, the escape probability is 0.45 and the diffusion length is 5 microm. For the gradient-doping sample, the escape probability is 0.55 and the diffusion length is 5.5 microm.     

Plasma deposition of GaAs

The deposition of an amorphous film of GaAs with a low frequency and low power glow discharge is described. The structure and composition of the film were determined by IR, secondary ion mass spectrometry, electron paramagnetic resonance and electron diffraction measurements. First results for the dark conductivity and the optical absorption are reported.     

Defects in GaAs

A comprehensive review of defects in GaAs with focus on native point defects and dislocations is given. The effects of these defects on devices are also considered. It is pointed out that a unified point defect model cannot at present be drawn from the available information. The importance of including anti-site defects in the point defect models which have hitherto only considered vacancies and interstitials is stressed. Attention is drawn to the need for understanding the dominant equilibrium native defects in GaAs both from fundamental and technological considerations. In this respect new experimental techniques are suggested to understand and control the defect structure. The current understanding of dislocations in GaAs is very much in its infancy compared to that in elemental semiconductors. Both theoretical work and careful experiments are wanting. This is essential since dislocations have been directly implicated in the degradation of GaAs devices.     

Reliability and failure analysis of GaAs mesfets on GaAs and Si substrates

Reliability of GaAs MESFET's on GaAs and Si was studied using high-temperature storage tests. Tested MESFETs were back etched and analysed by SEM, EDX and TEM. The major failure modes have been identified as gate sinking and an increase of ohmic contact resistance through Au particle formation.     

Growth and defects of GaAs and InGaAs films on porous GaAs substrates

We investigated the opportunities to increase the electric uniformity of GaAs and InGaAs films grown by molecular-beam epitaxy (MBE) technique on monocrystalline (single crystal) GaAs: both on porous and conventional so-called “monolithic” (without pores) GaAs (100) substrates. The basic attention was given to study the electrically active defects in films by using scanning electron microscope (SEM) with new technique which is called “Rau-detector” [E.I. Rau, A.N. Zhukov and E.B. Yakimov, Solid-State Phenomena, 1998, v. 53-54, 327.]. We compared the main properties of epitaxial GaAs and InGaAs films grown on above mentioned substrates. The films grown on porous substrates had higher structural perfection including the following advantages: (a) smoother surface due to lateral growth mechanism; (b) less density of structural defects (without dislocation walls), the density of pyramidal defects was ∼ 2 × 10⁵ cm^− 2 as compared with the density 2 × 10⁷ cm^− 2 in the films grown on monolithic substrates; (c) less electrical activity of various structural defects and increased electric uniformity of grown films. The electrical activity of defects in films grown on porous substrates was essentially lowered due to gettering properties of porous substrate.     

Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs

Terahertz radiation was generated with several designs of photoconductive antennas (three dipoles, a bow tie, and a coplanar strip line) fabricated on low-temperature-grown (LT) GaAs and semi-insulating (SI) GaAs, and the emission properties of the photoconductive antennas were compared with each other. The radiation spectrum of each antenna was characterized with the photoconductive sampling technique. The total radiation power was also measured by a bolometer for comparison of the relative radiation power. The radiation spectra of the LT-GaAs-based and SI-GaAs-based photoconductive antennas of the same design showed no significant difference. The pump-power dependencies of the radiation power showed saturation for higher pump intensities, which was more serious in SI-GaAs-based antennas than in LT-GaAs-based antennas. We attributed the origin of the saturation to the field screening of the photocarriers.     

Wet oxidation of thin AlAs in cylindrical composite of GaAs/AlAs/GaAs

Lateral wet oxidation in a cylindrical composite, GaAs/AlAs/GaAs, with varying thickness of the AlAs layer has been investigated. The oxidation depth in AlAs was measured in the temperature range of 400–480 °C. At given temperature and time, the depth increases with the increase in thickness. The thickness effect was successfully interpreted based on the kinetic model of boundary layer diffusion. The results are consistent with the findings from early studies on samples of square and rectangular cross-sections with the same activation energy of the thermal process.     

砷化镓微波单片集成电路(MMIC)技术进展

着重讨论南京电子器件研究所（ＮＥＤＩ）在ＧａＡｓ ＭＭＩＣ研制方面的近期进展。在详细介绍ＭＭＩＣ有源器件（ＭＥＳＦＥＴ,ＰＨＥＭＴ及ＨＢＴ）的ＣＡＤ模型建立技术及ＭＭＩＣ ＣＡＤ设计优化技术的基础上,以ＮＥＤＩ近年开发的各种ＭＭＩＣ为实例,包括发射,、接收与控制三类电路,给出有关的实验结果。此外,简要介绍了ＮＥＤＩ在移动通信手机用ＭＭＩＣ技术开发方面的前期结果。     

Manganese-induced growth of GaAs nanowires

GaAs nanowires have been grown on SiO2 and GaAs by molecular beam epitaxy using manganese as growth catalyst. Transmission electron microscopy shows that the wires have a wurtzite-type lattice and that alpha-Mn particles are found at the free end of the wires. X-ray absorption fine structure measurements reveal the presence of a significant fraction of Mn-As bonds, suggesting Mn diffusion and incorporation during wire growth. Transport measurements indicate that the wires are p-type, as expected from doping of GaAs with Mn.