光谱法用于血氧饱和度无损测量

综述了血氧饱和度无损测量的方法,泰勒级数法、近红外光谱法、氧指数(IOK)法以及基于蒙特卡罗的多元线性回归法等,分析了这些方法的优缺点.基于光动力疗法治疗机制(PDT),提出了一种修正的氧指数法,初步分析表明该法能够监测光动力疗法治疗鲜红斑痣(PWS)过程中血氧饱和度变化情况.     

激光诱导间质热疗中生物组织吸收系数变化特性研究

利用近红外光谱技术进行生物组织激光诱导间质热疗（laser induced interstitial thermotherapy, LITT）实时监测,探讨LITT术中疗效评估基础。实验样本采用离体猪肝和小鼠皮下移植肝肿瘤,使用近红外光谱实时采集系统采集激光热疗过程中组织吸收系数。实验结果表明组织吸收系数在激光热疗过程中具有一定的变化规律,其中猪肝的变化规律非常明显,在低功率下呈现缓慢的上升,高功率下达到一定的温度（50℃左右）快速上升,并逐步达到稳定。肿瘤在热毁损时会根据瘤体的组织特性不同出现特异性变化,这些变化可以作为将来临床治疗的参考。实验结果表明在进行实体组织激光诱导间质热疗过程中,组织吸收系数作为实时监测因子具有一定的参考价值,而作为肿瘤的治疗评估因子还需要进一步探索。     

近红外光谱(NIRS)技术的大鼠胶质瘤活体在位检测研究

采用一套专门设计的由微创光纤探头组成的光纤光谱仪生物组织光学参数测试系统,实时在位地获取C6胶质瘤大鼠脑组织的近红外光学参数,探讨以此为指标判别肿瘤基本信息、辅助临床诊断的可能性.利用该测试系统对患有C6胶质瘤的大鼠脑部肿瘤侧和正常侧进行近红外光谱检测.实验结果表明:优化散射系数和血氧饱和度可反映肿瘤位置及病理分化程度信息.证实近红外微探针技术对胶质瘤定性诊断是可行的,为近红外光谱技术临床应用打下基础.     

激光诱导荧光法测定光动力疗法治疗大鼠牙周病模型效果研究

目的:应用激光诱导荧光技术检测光动力治疗大鼠牙周炎过程中荧光光谱强度,分析治疗的最佳激光功率和治疗时间.方法:把20只大鼠上颌第一磨牙用细菌结扎线建立牙周病模型,随机分成5组,每只大鼠左侧进行治疗,右侧不进行治疗(阴性对照).每组大鼠使用亚甲基蓝光敏剂,在激光波长660nm特定功率下进行光动力治疗.利用光学多通道分析仪采集治疗过程中产生的荧光光谱强度,并观察治疗后各组的细菌菌落数.结果:使用激光功率250mW,连续照射时间4min时,产生的荧光光谱强度最大.治疗后检测发现该组细菌菌落数减少最多,验证了在该条件下治疗达到了最优效果.结论:激光诱导荧光法监测光动力治疗组织内光敏剂荧光变化可有效地反映光敏剂含量的变化,对于了解光动力反应的进行情况以及预测治疗效果具有一定指导意义,为制定光动力治疗慢性牙周炎方案提供理论依据.     

光子嫩肤热损伤的光学相干层析成像动态监控

提出了一种基于光学相干层析成像(PCT)的动态监控光子嫩肤热损伤的系统.利用OCT测试系统的非入侵性无损检测的技术特点进行实时测量光子嫩肤治疗过程中皮肤的光学参数,并根据所获得的光学参数变化量来反映热损伤程度.采用小鼠动物模型,并用不同剂量的激光照射小鼠背部皮肤,得到了皮肤组织的衰减系数将随着光剂量的增大而减小的关系.实验结果表明,衰减系数的变化量反映了热损伤的严重程度.     

激光诱导间质肿瘤热疗中激光能量在生物组织内传输规律的分析

采用蒙特卡罗模拟方法数值求解了不同波长(1064nm和850nm)时的激光诱导间质肿瘤热疗(LITT)中激光能量分别在人体的肝组织和前列腺组织内的传输，分析了影响激光能量空间分布的主要因素。穿透深度是影响激光能量在半径方向上分布区域的重要参数；在轴线方向上，穿透深度和激光加入头有效发射长度都对激光能量分布区域的大小有重要影响。     

新型无铅压电陶瓷NBT-NBSN的研究

采用传统陶瓷制备方法,制备出一种钙钛矿结构无铅新压电陶瓷材料(1-x)(Na1/2Bi1/2)TiO3-x(Na1/2Bi1/2)(Sb1/2Nb1/2)O3(x=0~1.4%,摩尔分数)。研究了(Na1/2Bi1/2)TiO3(NBT)陶瓷B位复合离子(Sb1/2Nb1/2)4 取代对介电和压电性能的影响。X-射线衍射分析表明,所研究的组成均能形成纯钙钛矿(ABO3)型固溶体。陶瓷材料的介电常数-温度曲线显示陶瓷在升温过程中存在两个介电常数温度峰,不同频率下陶瓷材料的介电常数-温度曲线显示该体系材料具有明显的弛豫铁电体特征。检测了不同组成陶瓷的压电性能,发现材料的压电常数d33、厚度机电耦合系数kt和介电常数rε随着x值的增加先增加后降低,在x=0.8%时,陶瓷的d33=97 pC/N,kt=0.50,为所研究组成中的最大值,介电损耗tanδ则随x值的增加而增加。     

Electromigration in fine-line conductors (0.45–2 μm)

The electromigration behaviour of various metallization systems has been tested on Si, GaAs and GaInAs substrates. Lifetime dependence on temperature and current density has been measured by accelerated lifetime tests. Linewidth was between 0.45 μm and 2 μm. The best electromigration resistance was found for electroplated gold lines, however also the system Al on Ti showed a as much as 40 times better performance than standard Al metallization. For linewidths of 0.45 μm a steep increase in stability has been found.     

Is Poly(vinylcarbazole) a Good Host for Blue Phosphorescent Dopants in PLEDs? Dimer Formation and Their Effects on the Triplet Energy Level of Poly(N‐vinylcarbazole) and Poly(N‐Ethyl‐2‐Vinylcarbazole)

The detailed measurement and analysis of the delayed emission from poly(vinylcarbazole) (PVK) and poly(N‐ethyl‐2‐vinyl‐carbazole) (P2VK) thin films is described. PVK has rapidly become a “polymer of choice” for hosting phosphorescent dopants in PLEDs, especially blue emitters. In this respect it is important to have a full understanding of the triplet properties of this host. It is concluded that in films, the electronic 0–0 peak energy of PVK phosphorescence is found at 2.88 eV (14 K). With an increase of temperature, >44 K, increasing emission from new long lived, lower energy species, previously ascribed to “trap states” in the literature, is observed. Increasing temperature enables thermally assisted triplet exciton hopping to these trap states. Critically it is shown that some of these triplet trap species are ground state triplet dimers in origin for both PVK (2.46 eV) and P2VK (2.1 eV), and not all of them are of excimer nature as previously thought. These species can quench the emission of blue heavy metal complexes doped in PVK and drastically effect performance over lifetime if the dimer formation increases over time and at elevated operating temperature. It is therefore concluded that PVK might not be such an ideal host material for blue phosphorescent emitters.     

NBT-Ba(NbO3)2无铅压电陶瓷的压电介电性能

采用传统陶瓷制备方法,制备了一种新的(Na1/2Bi1/2)TiO3基无铅压电陶瓷(1-x)(Na1/2Bi1/2)TiO3-xBa(NbO3)2(摩尔分数x=0~1.4%)。X-射线衍射分析表明,所研究的组成均能够形成纯钙钛矿(ABO3)型固溶体。SEM观察结果表明,掺入Ba(NbO3)2促进了长条状晶粒的析出。不同频率下陶瓷材料的介电常数-温度曲线显示该体系材料具有明显的弛豫铁电体特征,且随着Ba(NbO3)2的增加,其弛豫性特征愈明显。检测了不同组成陶瓷的压电性能,发现材料的压电常数d33和平面机电耦合系数kp随着x值的增加先增加后降低,在x=0.6%时,陶瓷的d33=94 pC/N,kp=0.171,为所研究组成中的最大值,介电损耗tanδ则随x值的增加而增加。     

The Zn(S,O,OH)/ZnMgO buffer in thin film Cu(In,Ga)(S,Se)2‐based solar cells part I: Fast chemical bath deposition of Zn(S,O,OH) buffer layers for industrial application on Co‐evaporated Cu(In,Ga)Se2 and electrodeposited CuIn(S,Se)2 solar cells

This paper is focused on the basic study and optimization of short time (<10 min) Chemical Bath Deposition (CBD) of Zn(S,O,OH) buffer layers in co‐evaporated Cu(In,Ga)Se₂ (CIGSe) and electrodeposited CuIn(S,Se)₂ ((ED)‐CIS) solar cells for industrial applications. First, the influence of the deposition temperature is studied from theoretical solution chemistry considerations by constructing solubility diagrams of ZnS, ZnO, and Zn(OH)₂ as a function of temperature. In order to reduce the deposition time under 10 min, experimental growth deposition studies are then carried out by the in situ quartz crystal microgravimetry (QCM) technique. An optimized process is performed and compared to the classical Zn(S,O,OH) deposition. The morphology and composition of Zn(S,O,OH) films are determined using SEM and XPS techniques. The optimized process is tested on electrodeposited‐CIS and co‐evaporated‐CIGSe absorbers and cells are completed with (Zn,Mg)O/ZnO:Al windows layers. Efficiencies similar or even better than CBD CdS/i‐ZnO reference buffer layers are obtained (15·7% for CIGSe and 8·1% for (ED)‐CIS). Copyright © 2009 John Wiley & Sons, Ltd.     

Stability of Frenkel pairs in Si(1 0 0) surface in the presence of germanium and oxygen atoms

A first-principles pseudo-potential study of Frenkel pair generation close to the Si(1 0 0) surface in the presence of germanium and oxygen atoms is reported. The energies and structures of the defect structures (i.e. vacancy and relaxed tetrahedral Si interstitial) are calculated using supercell with up to 88 atoms. We present results obtained using the generalized gradient approximation (GGA) for the exchange-correlation energy. We examine the effect of the presence of germanium and oxygen atoms on the stability of Frenkel pairs generated near the Si(1 0 0) surface by comparing a number of individual cases, starting from vacancy interstitial pairs situated at various positions. The general tendency of the created interstitials is to climb towards the surface, but they generally remain in subsurface layers, ready to migrate into the layer. This tendency is enhanced by the presence of the Ge and/or O atoms. We show that the formation energy is lower and Si interstitials can be created with energies as low as 1.5 eV.     

Improvement of the cell performance in the ZnS/Cu(In,Ga)Se2 solar cells by the sputter deposition of a bilayer ZnO : Al film

ZnS is a candidate to replace CdS as the buffer layer in Cu(In,Ga)Se₂ (CIGS) solar cells for Cd‐free commercial product. However, the resistance of ZnS is too large, and the photoconductivity is too small. Therefore, the thickness of the ZnS should be as thin as possible. However, a CIGS solar cell with a very thin ZnS buffer layer is vulnerable to the sputtering power of the ZnO : Al window layer deposition because of plasma damage. To improve the efficiency of CIGS solar cells with a chemical‐bath‐deposited ZnS buffer layer, the effect of the plasma damage by the sputter deposition of the ZnO : Al window layer should be understood. We have found that the efficiency of a CIGS solar cell consistently decreases with an increase in the sputtering power for the ZnO : Al window layer deposition onto the ZnS buffer layer because of plasma damage. To protect the ZnS/CIGS interface, a bilayer ZnO : Al film was developed. It consists of a 50‐nm‐thick ZnO : Al plasma protection layer deposited at a sputtering power of 50 W and a 100‐nm‐thick ZnO : Al conducting layer deposited at a sputtering power of 200 W. The introduction of a 50‐nm‐thick ZnO : Al layer deposited at 50 W prevented plasma damage by sputtering, resulting in a high open‐circuit voltage, a large fill factor, and shunt resistance. The ZnS/CIGS solar cell with the bilayer ZnO : Al film yielded a cell efficiency of 14.68%. Therefore, the application of bilayer ZnO : Al film to the window layer is suitable for CIGS solar cells with a ZnS buffer layer. Copyright © 2012 John Wiley & Sons, Ltd.     

Epitaxial growth of Dy2O3 thin films on epitaxial Dy-germanide films on Ge(0 0 1) substrates

Ultra-thin films of Dy are grown on Ge(0 0 1) substrates by molecular beam deposition near room temperature and immediately annealed for solid phase epitaxy at higher temperatures, leading to the formation of DyGe_x films. Thin films of Dy₂O₃ are grown on the DyGe_x film on Ge(0 0 1) substrates by molecular beam epitaxy. Streaky reflection high energy electron diffraction (RHEED) patterns reveal that epitaxial DyGe_x films grow on Ge(0 0 1) substrates with flat surfaces. X-ray diffraction (XRD) spectrum suggests the growth of an orthorhombic phase of DyGe_x films with (0 0 1) orientations. After the growth of Dy₂O₃ films, there is a change in RHEED patterns to spotty features, revealing the growth of 3D crystalline islands. XRD spectrum shows the presence of a cubic phase with (1 0 0) and (1 1 1) orientations. Atomic force microscopy image shows that the surface morphology of Dy₂O₃ films is smooth with a root mean square roughness of 10 Å.