高钴硬质合金基底化学气相沉积金刚石膜的研究

通过采用二步浸蚀法对硬质合金(WC-12%Co)刀具进行预处理,应用微波等离子化学气相沉积装置,在经二步浸蚀法预处理过的硬质合金上沉积出高质量和结合力强的金刚石涂层.研究了提高涂层附着力的基体预处理方法,用SEM、XRD、激光Raman光谱分析了涂层质量,用切削试验检测金刚石涂层与刀具基底的附着情况,结果表明二步浸蚀基体预处理方法能有效地降低基体表面金属钴的含量,消除沉积过程中Co的负面影响,从而提高金刚石涂层的附着力,使刀具使用寿命明显提高.     

用富勒烯碳管作形核剂在铜／钨钽中间层的铁基材料上沉积金刚石

研究了用富勒烯族碳纳米管作金刚石核剂,在沉积了铜／钨钽中间层的铁基材料上的用热丝法化学气相沉积金刚石膜的规律。用扫描电子显微镜、拉曼光谱、Ｘ射线衍射仪检测金刚石膜的质量和中间层的结构变化,结果表明当中间怪只有钨层时不能沉积出金人有当中间上镀镀铜层和钨钽层或钨层时可以沉积出金刚石膜。     

类金刚石薄膜微观摩擦性能的FFM评价——针尖尺度效应

采用等离子体增强气相沉积制备了类金刚石薄膜，利用原子力显微镜的轻敲模式观察了它们的形貌，并在考虑外加载荷和扫描速度的基础上，用摩擦力显微镜（FFM）对比考察了尖端探针和平头探针对类金刚石薄膜摩擦性能评价的影响。结果表明：类金刚石薄膜的表面粗糙度随基底负偏压的增加而减小；存在于探针和类金刚石薄膜之间的水膜对尖端探针的剪切阻力贡献较大，且尖端探针测得的摩擦力变化趋势受扫描速度影响显著；水膜对平头探针起着不同形式的润滑作用，从而导致平头探针和类金刚石薄膜之间摩擦性能的速度效应存在差异；利用摩擦力显微镜考察类金刚石薄膜的摩擦性能时，存在着明显的针尖尺寸效应。     

掺杂钨类金刚石膜的显微结构与性能

利用非平衡磁控溅射与离子源复合沉积技术,以高纯甲烷和氮气作反应气体,钨为溅射靶,在40Cr、Si(100)基片和不锈钢基体上分别制备了厚度约为2μm的掺杂钨类金刚石膜,并在类金刚石膜与基体间沉积了过渡层;应用X射线衍射、拉曼光谱、俄歇电子能谱等手段分析了掺杂钨类金刚石膜的显微结构和表面成分;应用球盘摩擦磨损试验机以及纳米硬度计等测试了膜的硬度、摩擦性能及结合强度。结果表明:所制备的膜表面均匀、致密、光滑,具有典型的类金刚石结构特征;掺杂的钨弥散分布在无定型的碳中,一部分形成W2C微晶相;当膜中钨原子分数约为20%时,膜的硬度最高,摩擦因数也相对较小,膜基结合力在70 N以上。     

沉积功率对金刚石薄膜质量和结合性能的影响

借助ＳＥＭ、ＸＲＤ和Ｒａｍａｎ光谱等分析方法对不同沉积功率条件不合成的金刚石膜形貌、结构和质量进行了表征，并采用压痕试验法评定了金刚石膜与基体的结合性能。     

Cr过渡层沉积粘附型CVD金刚石膜的机理研究

研究了电沉积层作为过渡层沉积CVD金刚石膜的工艺，在硬质合金的Cr电沉积层上用热丝法沉积出CVD金刚石膜。利用SEM分析了电沉积层的形貌，利用EPMA分析了H等离子处理后电沉积层的断面，利用SEM和Raman分析了金刚石膜的表面形貌、成分，利用XRD分析了过渡层和CVD金刚石膜的结合面．利用压痕法研究了金刚石薄膜与基体的结合力。结果表明，H等离子处理使得硬质合全与Cr镀层成为冶金结合，提高了电沉积层的结合强度；在Cr过渡层与金刚石膜之间形成的Cr3C2和Cr7C3等碳化物有利于金刚石的成核和膜基结合强度的提高。     

在WC-TiC-Co硬质合金基体上制备金刚石薄膜的试验研究

通过采用Cu/Ti复合过渡层在WC TiC Co硬质合金基体上制备金刚石薄膜的试验 ,研究了沉积工艺对金刚石薄膜的质量、表面粗糙度及附着力的影响。研究结果表明 ,采用Cu/Ti复合过渡层有利于提高金刚石薄膜的附着力 ;适当降低沉积温度虽然会导致金刚石薄膜中非金刚石碳含量增加 ,但有利于增强膜层附着力。     

金刚石薄膜与 WC-Co 硬质合金的附着性研究

以甲烷和氢气为气源，用热丝ＣＶＤ法，在ＷＣ－６％Ｃｏ的硬质合金基体上沉积金刚石薄膜。研究了基体表面经抛光、腐蚀、脱碳及镀中间层等不同的预处理对金刚石薄膜与基体的附着性的影响。试验结果表明：基体表面经抛光、腐蚀再经脱碳或镀ＴｉＮ中间层，可改善和提高附着性，金刚石薄膜的形核率和沉积速率有所降低；基体表面只经抛光、腐蚀预处理，金刚石薄膜的形核率和沉积速率较高，结晶性好，但附着性较差；采用分段沉积，可以提高金刚石薄膜的附着性。     

改善CVD金刚石薄膜涂层刀具性能的工艺研究

用热丝CVD法,以丙酮和氢气为碳源,在WC-Co硬质合金衬底上沉积金刚石薄膜,在分析了工艺条件(衬底温度、碳源浓度、反应压力)对金刚石薄膜性能的影响的基础上,提出了分步沉积法改善金刚石薄膜涂层刀具性能的新工艺.结果表明,合理控制工艺条件的新工艺对涂层薄膜质量、形貌和粗糙度、薄膜与衬底间的附着力、刀具的耐用度及切削性能有显著影响,对获取实用化的在硬质合金刀具基体上沉积高附着强度、低粗糙度金刚石薄膜的新技术具有重要的意义.     

金刚石薄膜与WC—Co硬质合金的随着性研究

以甲烷和氢气为气源，用热丝ＣＶＤ法，在ＷＣ－６％Ｃｏ的硬质合金基体上沉积金刚石薄膜。研究了基体表面经抛光、腐蚀、脱碳及镀中间层等不同的预处理对金刚石薄膜与基体的随着性的影响。试验结果表明：基体表面经抛光、腐蚀再经脱碳或镀ＴｉＮ中间层，可改善和提高随着性，金刚石薄膜的形核率沉积速率有所降低；基体表面只经抛光、腐蚀预处理，金刚石薄膜的形核率和沉积速率较高，结晶性好，但随着性较差；采用分段沉积，可以提高     

微/纳米CVD金刚石涂层的制备

使用热丝化学气相沉积(HFCVD)装置,在以WC - CO硬质合金为衬底,采用调节涂层生长参数,制备出性能优良的微/纳米金刚石涂层.用SEM,AFM,Raman表征微观结构和表面品质.采用压痕法评估涂层的结合性能,并与微米金刚石涂层、纳米金刚石涂层进行比较.结果显示,当生长气压由3.3 kPa降为1.0 kPa时,底层的微米级晶粒逐渐被上层纳米级晶粒覆盖,并且涂层表面显露出纳米金刚石涂层特性.在结合性能实验中也指出,微/纳米金刚石涂层的结合性能比纳米金刚石涂层要优异.     

Synthesizing diamond film on Cu,Fe and Si substrate by in-liquid microwave plasma CVD

The purpose of this study is to synthesize diamond onto Si, Cu, and Fe (SUS632J2) substrates and to analyze the effect of carbon diffusion on their surfaces. Diamond was synthesized using the in-liquid microwave plasma chemical vapor deposition (IL-MPCVD) as a novel method for synthesizing diamond on various base materials. The IL-MPCVD method is superior one due to its efficiency in terms of cost, space and speed as compared to a conventional gas phase microwave plasma CVD (MPCVD). Microwaves of 2.45 GHz generated plasma in a solution which was comprised of methanol: ethanol (M:E = 97:3). Evaluation of deposited diamond films was done by a Scanning Electron Microscope (SEM) and Raman spectroscopy. Results shows that the IL-MPCVD method can form diamond films on Cu, Si and Fe substrates. The minimum time of film formation of Cu, Si and Fe are 2.5, 3.5 and 5 min, respectively. The material that forms carbide layers such as Si is a better substrate to form diamond film by the IL-MPCVD than other metal substrates such as Cu and Fe. Synthesizing diamond directly on the Fe substrate results in poor quality layers. The effect of carbon diffusion influences diamond film nucleation and diamond growth. In order to alleviate the carbon diffusion and improve the quality of the diamond film on the Fe substrate, Si has been sputtered on the Fe substrate as an interlayer. It is found that the diamond film can be formed on a Fe substrate using a Si interlayer and that heat treatment and thickening the interlayer improve its quality.     

Comparative characterization of chemical vapor deposition diamond films by scanning cathodoluminescence microscopy

Thin diamond films grown by chemical vapor deposition (CVD) process on Si substrates under similar deposition conditions in the microwave-excited (MW) and direct current (DC) plasma discharges were taken for comparative examination. Raman spectra, photoluminescence (PL) spectroscopy, and color cathodoluminescence scanning electron microscopy (CCL-SEM) have been used for characterization of the structure and composition features of poly-crystalline diamond films. No essential difference in Raman spectra for the CVD diamond films was detected. A significant difference was revealed in the PL spectra and in CCL-SEM images.     

掺硼金刚石膜的电火花加工研究

由于金刚石膜的加工极其困难，提出了一种通过在制备过程中掺杂使金刚石膜导电的金刚石膜精加工新工艺，利用电火花对掺杂金刚石膜进行电加工。研究了电参数对金刚石膜加工性能的影响，用SEM和Raman分析了金刚石膜电火花加工表面的形貌和成分。研究了掺硼金刚石膜电火花加工的加工机理，建立了电火花加工模型。试验结果表明，电参数对金刚石膜的加工速度、表面粗糙度有较大影响，掺杂金刚石膜的电火花加工是汽化、熔化、氧化、石墨化等多种效应的综合作用结果，通过掺杂可以显著改善金刚石膜的可加工性。     

石墨基金刚石涂层电极的制备及性能研究

采用固体三氧化二硼，用热丝辅助化学气相沉积法在石墨衬底上沉积了掺硼金刚石涂层。用喇曼谱、扫描电镜及电导一温度关系研究了掺硼金刚石涂层的生长气压和掺硼浓度等主要工艺参数对涂层的形貌、结构及电学性能的影响和涂层的循环伏安特性。结果表明，石墨基金刚石涂层电极具有优良的电化学性能。     

Morphologic and cathodoluminescence studies of diamond films by scanning electron microscopy

Using recent papers on scanning electron microscopy (SEM) of chemical vapor deposition (CVD) diamond films, two analytical applications of the SEM are discussed: the morphologic investigations (secondary electron emission mode) and the recognition of impurities and defects [cathodoluminescence (CL) mode]. Studies of CVD diamond films by SEM demonstrate that the morphologies of these films are affected by synthesis conditions, especially by substrate temperature, methane concentration, and total pressure in the reactor. CL spectra and images are useful tools for clarifying the relationship between emission centers and different types of defects generated during the process of diamond crystal growth. The paper shows that the investigations of the morphology, crystallinity, local CL emission, as well as the surface distribution of CL spectra on CVD diamond films by SEM led to the correlative information for quality estimation of films in comparison with natural diamond.     

Fractal features and surface micromorphology of diamond nanocrystals

This paper analyses the three‐dimensional (3‐D) surface texture of growing diamond nanocrystals on Au thin films as catalyst on p‐type Si substrate using hot filament chemical vapour deposition (HFCVD). Rutherford backscattering spectrometry (RBS), atomic force microscopy (AFM), Raman, X‐ray diffraction (XRD) and scanning electron microscopy (SEM) analyses were applied also to characterize the 3‐D surface texture data in connection with the statistical, and fractal analyses. This type of 3‐D morphology allows a deeper understanding of structure/property relationships and surface defects in prepared samples. Our results indicate a promising way for preparing high‐quality diamond nanocrystals on Au thin films as catalyst on p‐type Si substrate via HFCVD method.     

STUDY ON COATING MECHANISM OF DIAMOND FILM ON CUTTING TOOL AND ITS APPLICATION

0 INTRODUCT[ONDiamond is a kind Of excellent cutting tool material for cutting non-fermus metal and nonmetallicmaterials. Because of the limited supply and high cost of natural diamond it has been mainly used forspecial aPPlications Where no other tools can Perform satisfactorily.The study of dePOsition of diamond film on cutting tools and its wide aPPlications began in 1980.Great Progress has been made at the same time. The [ypical principles used in coated-cutting tool are thehacrow…     

电化学两步处理对精磨YG6硬质合金性能及金刚石涂层的影响

采用电化学两步腐蚀法进行表面预处理研究,探讨了电化学腐蚀中电流类型、腐蚀时间等参数对精磨YG6硬质合金基体的影响;在此基体上,采用直流弧光放电等离子体CVD法制备了金刚石薄膜,并采用SEM、激光拉曼光谱仪、原子吸收分光光度计、电动轮廓仪、洛氏硬度计等进行了表征.结果表明:直、交电化学腐蚀都可以有效地去除YG6硬质合金基...