At-wavelength, system-level flare characterization of extreme-ultraviolet optical systems

The extreme-ultraviolet (EUV) phase-shifting point-diffraction interferometer (PS/PDI) has recently been developed to provide high-accuracy wave-front characterization critical to the development of EUV lithography systems. Here we describe an enhanced implementation of the PS/PDI that significantly extends its measurement bandwidth. The enhanced PS/PDI is capable of simultaneously characterizing both wave front and flare. PS/PDI-based flare characterization of two recently fabricated EUV 10x-reduction lithographic optical systems is presented.     

Design and fabrication of a high-efficiency extreme-ultraviolet binary phase-only computer-generated hologram

As the development of extreme-ultraviolet (EUV) lithography progresses, interest grows in the extension of traditional optical components to the EUV regime. The strong absorption of EUV by most materials and its extremely short wavelength, however, make it very difficult to implement many components that are commonplace in the longer wavelength regimes. One such component is the diffractive optical element used, for example, in illumination systems to efficiently generate modified pupil fills. The fabrication and characterization of an EUV binary phase-only computer-generated hologram is demonstrated, allowing arbitrary far-field diffraction patterns to be generated. Based on reflective architecture, the fabricated device is extremely efficient. Based on an identically fabricated null hologram, the absolute efficiency into one diffracted order of 22% has been demonstrated. In the case where axially symmetric diffraction patterns are desired (both positive and negative diffraction orders can be used), the efficiency can be twice as high.     

Optical performance of extreme ultraviolet lithography mask with an indium tin oxide absorber

In this study, we propose a new extreme ultraviolet (EUV) binary mask with an indium tin oxide (ITO) absorber. The optical constant of ITO film at 13.5 nm wavelength in the EUV regime was determined by means of X-ray reflectivity measurements and the chemical composition was determined using Rutherford backscattering spectrometry. The reflectance of a binary mask with an ITO absorber layer at various thicknesses was also measured to investigate the optical performance in the EUV regime. It was found that the extinction coefficient of ITO film is higher than that of a typical absorber layer, TaN, and that the reflectance of the ITO absorber in the binary mask at a wavelength of 13.5 nm is reduced to 0.62% at a thickness of 45 nm. Therefore, it is expected that the ITO film can be employed as a thin absorber of a binary mask to reduce the geometrical shadow effect in extreme ultraviolet lithography.     

High-efficiency x-ray gratings with asymmetric-cut multilayers

We present the fabrication and analysis of efficient and highly dispersive gratings for the x-ray and extreme ultraviolet (EUV) regime. We show that an asymmetric-cut multilayer structure can act as a near-perfect blazed grating. The precision and high line density are achieved by layer deposition of materials, which can be controlled to the angstrom level. We demonstrate this in the EUV regime with two structures made by cutting and polishing magnetron-sputtered multilayer mirrors of over 2000 bilayers thick, each with a period of 6.88 nm. These were cut at angles of 2.9° and 7.8° to the surface. Within the 3% bandwidth rocking curve of the multilayer, the angular dispersion of the diffracted wave was in agreement with the grating equation for elements with 7250 and 19,700 line pairs/mm, respectively. The dependence of the measured efficiency was in excellent agreement with a formulation of dynamical diffraction theory for multilayered structures. At a wavelength of 13.2 nm, the efficiency of the first-order diffraction was over 95% of the reflectivity of the uncut multilayer. We predict that such structures should also be effective at shorter x-ray wavelengths. Both the Laue (transmitting) and Bragg (reflecting) geometries are incorporated in our formalism, which is applied to the analysis of multilayer Laue lenses and focusing and dispersing Bragg optics.     

Sensitivity study of two high-throughput resolution metrics for photoresists

The resolution of chemically amplified resists is becoming an increasing concern, especially for lithography in the extreme ultraviolet (EUV) regime. Large-scale screening is currently under way to identify resist platforms that can support the demanding specifications required for EUV lithography. Current screening processes would benefit from the development of metrics that can objectively quantify resist resolution in a high-throughput fashion. Here we examine two high-throughput metrics for resist resolution determination. After summarizing their details and justifying their utility, we characterize the sensitivity of both metrics to known uncertainties in exposure tool aberrations and focus control. For an implementation at EUV wavelengths, we report aberration and focus-limited error bars in extracted resolution of approximately 1.25 nm rms for both metrics, making them attractive candidates for future screening and downselection efforts.     

Laser-produced lithium plasma as a narrow-band extended ultraviolet radiation source for photoelectron spectroscopy

Extended ultraviolet (EUV) emission characteristics of a laser-produced lithium plasma are determined with regard to the requirements of x-ray photoelectron spectroscopy. The main features of interest are spectral distribution, photon flux, bandwidth, source size, and emission duration. Laser-produced lithium plasmas are characterized as emitters of intense narrow-band EUV radiation. It can be estimated that the lithium Lyman-alpha line emission in combination with an ellipsoidal silicon/molybdenum multilayer mirror is a suitable EUV source for an x-ray photoelectron spectroscopy microscope with a 50-meV energy resolution and a 10-mum lateral resolution.     

Mo/Si and Mo/Be multilayer thin films on Zerodur substrates for extreme-ultraviolet lithography

Multilayer-coated Zerodur optics are expected to play a pivotal role in an extreme-ultraviolet (EUV) lithography tool. Zerodur is a multiphase, multicomponent material that is a much more complicated substrate than commonly used single-crystal Si or fused-silica substrates. We investigate the effect of Zerodur substrates on the performance of high-EUV reflectance Mo/Si and Mo/Be multilayer thin films. For Mo/Si the EUV reflectance had a nearly linear dependence on substrate roughness for roughness values of 0.06-0.36 nm rms, and the FWHM of the reflectance curves (spectral bandwidth) was essentially constant over this range. For Mo/Be the EUV reflectance was observed to decrease more steeply than Mo/Si for roughness values greater than approximately 0.2-0.3 nm. Little difference was observed in the EUV reflectivity of multilayer thin films deposited on different substrates as long as the substrate roughness values were similar.     

Determination of the diffuser reference plane for accurate illuminance responsivity calibrations

It is difficult to predict where the effective measurement plane is situated with dome-shaped diffusers often used in commercial photometers and radiometers. Insufficient knowledge of this plane could lead to large systematic errors in calibration of the illuminance responsivity of photometers. We propose a method that can be used to determine this reference plane accurately, based on the inverse-square law between the measured signal and the distance from the source. The method is demonstrated with three commercial photometers with dome-shaped diffusers of different geometries. By taking into account the measured shifts of the reference planes (5.0 +/- 0.5 mm, 7.8 +/- 0.3 mm, and 8.5 +/- 0.7 mm), we reduced the systematic measurement errors up to 2% to statistical uncertainty components at the level of 0.2%.     

Telephony Speech Enhancement by Data Hiding

The current public switched telephone network (PSTN) is only able to deliver analog signals in a relatively narrow frequency band, about 200-3500 Hz. Such a limited bandwidth causes the typical sound of the narrowband telephone speech. In order to improve intelligibility and perceived quality of telephone speech, we propose using data hiding to extend the PSTN channel bandwidth. Based on the perceptual masking principle, the inaudible spectrum components within the telephone bandwidth can be removed without degrading the speech quality, providing a hidden channel to transmit extra information. The audible components outside the PSTN bandwidth, which are spread out by using orthogonal pseudo-noise codes, are embedded into this hidden channel and then transmitted through the PSTN channel. While this hidden signal is not audible to the human ear, it can be extracted at the receiver end. It results in a final speech signal with a wider bandwidth than the normal PSTN channel. Using both theoretical and simulation analysis, it is shown that the proposed approach is robust to quantization errors and channel noises. Although we cannot physically extend the transmission bandwidth of PSTN, the telephony speech quality can be significantly improved by using the proposed data hiding technique     

Effect of the recording scheme parameters on the scattering characteristics of holographic diffusers

The influence of parameters of the recording scheme and the regime of photochemical processing on the scattering characteristics of holographic diffusers obtained using the Gabor on-axis scheme has been studied.     

Emerging firms in an emerging field: an analysis of patent citations in electronic-paper display technology

USPTO patent data covering the years 1994–2008 is used in this study to examine the citation networks of electronic-paper display technology. Our primary aim is to provide a better understanding of the ways in which emerging firms interact with, and learn from, technology diffusers. Two implications can be drawn from our analysis. Firstly, emerging firms within an emerging industry can enhance their technological capabilities through positive external learning activity. Secondly, despite the fact that technology diffusers have clear technological advantages, with the emergence of a new field, their influence within the network could potentially be decayed if they fail to remain proactive in terms of the absorption of available external knowledge.     

Xenon capillary discharge extreme-ultraviolet source emitting over a large angular range

We describe a capillary discharge source configuration, allowing for collection of extreme-ultraviolet (EUV) radiation at large off-axis angles, without the need for an EUV window. Operating with xenon gas, the source emits intensely within the EUV spectral region at 11.3 and 13.5 nm. When coupled with a high-collection-efficiency optical system, this source may be suitable for a number of high-average-power EUV imaging applications.     

Extreme-ultraviolet lensless Fourier-transform holography

We demonstrate 100-nm-resolution holographic aerial image monitoring based on lensless Fourier-transform holography at extreme-UV (EUV) wavelengths, using synchrotron-based illumination. This method can be used to monitor the coherent imaging performance of EUV lithographic optical systems. The system has been implemented in the EUV phase-shifting point-diffraction interferometer recently developed at Lawrence Berkeley National Laboratory. Here we introduce the idea of the holographic aerial image-recording technique and present imaging performance characterization results for a 10x Schwarzschild objective, a prototype EUV lithographic optic. The results are compared with simulations, and good agreement is obtained. Various object patterns, including phase-shift-enhanced patterns, have been studied. Finally, the application of the holographic aerial image-recording technique to EUV multilayer mask-blank defect characterization is discussed.     

Eliashberg theory of the critical temperature and isotope effect. Dependence on bandwidth,band-filling,and direct Coulomb repulsion

We investigate the dependence of the superconducting critical temperature and the isotope coefficient on bandwidth, band-filling, and the direct Coulomb repulsion, within Eliashberg theory. The Migdal approximation is assumed throughout, and the Coulomb repulsion is modelled by the Hubbard U and treated in the simplest approximation. We assume a constant density of states with a finite bandwidth. We find that while, in principle, small isotope coefficients are possible, it is unlikely that the isotope coefficient can ever be negative within this model. Furthermore, it is difficult to achieve small isotope coefficients for realistic parameters. Finally, we discuss a possible means by which large isotope coefficients can occur at low filling.     

Parametric modulation of an atomic magnetometer

The authors report on a rubidium atomic magnetometer designed for use in a shielded environment. Operating in the spin-exchange relaxation-free regime, the magnetometer utilizes parametric modulation of the z-magnetic field to suppress noise associated with airflow through the oven and to simultaneously detect x- and y-field components, using a single probe beam, with minimal loss of sensitivity and bandwidth. A white noise level of 60 fT/(Hz)(1/2) was achieved.     

Broadband transmission masks, gratings and filters for extreme ultraviolet and soft X-ray lithography

Lithography and patterning on a nanometre scale with extreme ultraviolet (EUV) and soft X-ray radiation allow creation of high resolution, high density patterns independent of a substrate type. To realize the full potential of this method, especially for EUV proximity printing and interference lithography, a reliable technology for manufacturing of the transmission masks and gratings should be available. In this paper we present a development of broadband amplitude transmission masks and gratings for extreme ultraviolet and soft X-ray lithography based on free-standing niobium membranes. In comparison with a standard silicon nitride based technology the transmission masks demonstrate high contrast not only for in-band EUV (13.5 nm) radiation but also for wavelengths below Si L-absorption edge (12.4 nm).The masks and filters with free standing areas up to 1000 × 1000 μm² and 100 nm to 300 nm membrane thicknesses are shown. Electron beam structuring of an absorber layer with dense line and dot patterns with sub-50 nm structures is demonstrated. Diffractive and filtering properties of obtained structures are examined with EUV radiation from a gas discharge plasma source.     

Design of multilayer extreme-ultraviolet mirrors for enhanced reflectivity

We show numerically that the reflectivity of multilayer extreme-UV (EUV) mirrors tuned for the 11-14-nm spectral region, for which the two-component, Mo/Be and Mo/Si multilayer systems with constant layer thickness are commonly used, can be enhanced significantly when we incorporate additional materials within the stack. The reflectivity performance of the quarter-wavelength multilayers can be enhanced further by global optimization procedures with which the layer thicknesses are varied for optimum performance. By incorporating additional materials of differing complex refractive indices-e.g., Rh, Ru, Sr, Pd, and RbCl-in various regions of the stack, we observed peak reflectivity enhancements of as much as ~5% for a single reflector compared with standard unoptimized stacks. We show that, in an EUV optical system with nine near-normal-incidence mirror surfaces, the optical throughput may be increased by a factor as great as 2. We also show that protective capping layers, in addition to protecting the mirrors from environmental attack, may serve to improve the reflectivity characteristics.     

Atomic-precision multilayer coating of the first set of optics for an extreme-ultraviolet lithography prototype system

We present our results of coating a first set of optical elements for an extreme-ultraviolet (EUV) lithography system. The optics were coated with Mo-Si multilayer mirrors by dc magnetron sputtering and characterized by synchrotron radiation. Near-normal incidence reflectances above 65% were achieved at 13.35 nm. The run-to-run reproducibility of the reflectance peak wavelength was maintained to within 0.4%, and the thickness uniformity (or gradient) was controlled to within +/-0.05% peak to valley, exceeding the prescribed specification. The deposition technique used for this study is an enabling technology for EUV lithography, making it possible to fabricate multilayer-coated optics to accuracies commensurate with atomic dimensions.     

Concept, modeling, and performance prediction of a low-cost, large deformable mirror

While it is attractive to integrate a deformable mirror (DM) for adaptive optics (AO) into the telescope itself rather than using relay optics within an instrument, the resulting large DM can be expensive, particularly for extremely large telescopes. A low-cost approach for building a large DM is to use voice-coil actuators connected to the back of the DM through suction cups. Use of such inexpensive voice-coil actuators leads to a poorly damped system with many structural modes within the desired bandwidth. Control of the mirror dynamics using electro-mechanical sensors is thus required for integration within an AO system. We introduce a distributed control approach, and we show that the "inner" back sensor control loop does not need to function at low frequencies, leading to significant cost reduction for the sensors. Incorporating realistic models of low-cost actuators and sensors together with an atmospheric seeing model, we demonstrate that the low-cost mirror strategy is feasible within a closed-loop AO system.