共查询到19条相似文献,搜索用时 109 毫秒
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随着超大规模集成电路的快速发展,硅片表面的Haze值对于现代半导体器件工艺的影响也越来越受到人们的重视.通过实验研究了精抛光工艺参数对硅片表面Haze值的影响规律.结果表明,随着抛光时间的延长,硅的去除量逐渐增大,硅片表面Haze值逐渐降低;同时抛光过程中机械作用与化学作用的协同作用对Haze值也有较大影响.随着抛光液温度的降低与抛光液体积流量的减小,化学作用减弱,硅片表面Haze值逐渐减小.而随着抛光压力的增大,机械作用逐渐起主导作用,硅片表面Haze值逐渐降低.但当Haze值降低到某一数值后,随着硅去除量的增大、抛光液温度的下降、抛光液体积流量的降低、抛光压力的增大,硅片表面的Haze值基本保持不变. 相似文献
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硅片化学机械抛光(CMP)是机械作用与化学作用相结合的技术,硅片表面的化学反应层主要是由抛光液中磨料的机械作用去除,磨粒对硅片表面的摩擦和划擦对硅片表面材料的去除起着重要作用。磨粒在硅片表面上的划痕长度直接影响硅片表面的材料去除率。本文首先在实验结果的基础上分析了硅片CMP过程中磨粒的分布形式,然后根据运动学和接触力学理论,分析了硅片、磨粒及抛光垫三者之间的运动关系,根据磨粒在硅片表面上的运动轨迹长度,得出了材料去除率与抛光速度之间的关系,该分析结果与实验结果一致,研究结果可为进一步理解硅片CMP的材料去除机理提供理论指导。 相似文献
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对于评价用于极大规模集成电路(ULSI)生产的300 mm硅抛光片的表面质量,需要关注两个关键参数即:SFQR和GBIR。在中国电子科技集团第四十五研究所研发的中国第一台最终化学精密抛光机的验证过程中,我们发现为了提高硅片表面的几何参数,必须监控抛光前硅片的形貌,并根据不同的硅片表面形貌来改变抛光头的区域压力。通过深入分析抛光前硅片的表面形貌,我们发现当硅片形貌为凹陷形状时,抛光后的硅片表面将严重恶化。由此,根据每个硅片不同的形貌,我们用特殊设计的抛光头来调整背压的区域分布,然后再进行抛光。最终,经过抛光头区域压力调整后的硅片几何参数比调整前得到了大幅提升,并已经能够满足我们的产品指标并可以用于生产。 相似文献
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文章简要地介绍了国内外的同行业对抛光硅片表面所作的大量测试分析工作,着重介绍用MOS高频C-V测试、二极管平面结特性测试和离子探针分析器对SiO_2溶胶抛光、Cu离子/SiO_2溶胶抛光、Cu离子抛光和Cr离子抛光等工艺制作的硅片表面进行的测试分析和比 相似文献
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超薄硅双面抛光片抛光工艺技术 总被引:2,自引:0,他引:2
MEMS器件、保护电路、空间太阳电池等的制作需要使用硅双面抛光片,并且要求抛光片的厚度很薄,传统的硅抛光片加工工艺已经不能满足这一要求.介绍了一种用于超薄硅单晶双面抛光片加工的抛光工艺方法.通过对硅片抛光机理[1],抛光方式、抛光工艺的研究和对抛光工艺试验结果的分析,解决了超薄硅单晶双面抛光片在加工过程中碎片率高、抛光... 相似文献
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In this study, an electrolytic polishing experimental system was developed to obtain a uniform, flat-surfaced monocrystalline silicon with specific crystallographic planes. Several key factors reflecting specific electrolytic polishing on monocrystalline silicon with specific crystallographic planes were summarized. These factors, including electrolyte, conduction mode, Schottky barrier, semiconductor body resistance, and unidirectional conductivity, were analyzed comprehensively through energy spectrum analysis, theoretical modeling, and potential simulation. The effects of electrolytic polishing process were obtained, and corresponding solutions were proposed. Finally, the electrolytic polishing experiment for monocrystalline silicon with specific crystallographic planes was conducted. A uniform, flat-surfaced monocrystalline silicon with no metamorphic layer was then obtained. The flatness error of the center area was less than 0.201 µm. Furthermore, the crystallographic planes of monocrystalline silicon wafers showed no change. 相似文献
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VB-GaAs抛光片表面粗糙度研究 总被引:1,自引:0,他引:1
将表面粗糙度作为评价垂直布里奇曼法砷化镓(VB-GaAs)抛光片表面质量的一项技术指标,研究了不同粒径的抛光液对VB-GaAs抛光片表面粗糙度的影响.通过试验对比,对于不同抛光阶段(包括粗抛、细抛及精抛三个阶段)进行了分析,粗抛阶段应采用较大粒径的抛光液,细抛阶段应采用稍小粒径的抛光液,而精抛阶段应采用小粒径的抛光液. 相似文献
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CMP抛光运动机理研究 总被引:2,自引:0,他引:2
靳永吉 《电子工业专用设备》2005,34(9):37-41
通过对硅晶片化学机械抛光过程中抛光运动机理的理论分析,研究了硅晶片的抛光运动特性,探讨了主要工艺参数对硅晶片化学机械抛光后晶片表面粗糙度和表面平整度、抛光均匀性的影响规律。 相似文献
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《Proceedings of the IEEE. Institute of Electrical and Electronics Engineers》1969,57(9):1476-1480
This paper describes a newly developed chem-mech polishing process for silicon wafers. This polishing process, without using any abrasives, can produce a silicon surface free of work damage. A solution composed of cupric nitrate, ammonium fluoride, and nitric acid is used on a conventional polishing wheel. The rate of stock removal is controlled primarily by the composition of the solution and the polishing wheel temperature. Highly polished surfaces have been obtained with stock removal rates as high as 20 mils per hour. At higher removal rates, the process is difficult to control and surface quality suffers. 相似文献
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Polishing behaviors of single crystalline ceria abrasives on silicon dioxide and silicon nitride CMP 总被引:1,自引:0,他引:1
The effects of single crystalline ceria (CeO2) abrasives in chemical mechanical polishing (CMP) slurries were investigated for silicon dioxide (SiO2) and silicon nitride (Si3N4) CMP process. The size of ceria abrasives was controlled by varying hydrothermal reaction conditions. Polishing removal rate was measured with four slurries, with different mean primary particle size of 62, 116, 163 and 232 nm. The polishing results showed that the single crystalline ceria abrasives were not easily broken-down by mechanical force during CMP process. It was found that the removal rate of oxide and nitride film strongly depend upon abrasive size, whereas the surface uniformity deteriorates as abrasive size increases. The observed polishing results confirmed that there exists an optimum abrasive size (163 nm) for maximum removal selectivity between oxide and nitride films. The polishing behavior of the single crystalline ceria abrasives was discussed in terms of morphological properties of the abrasive particle. 相似文献