光声信号控制激光器

虽然利用激光在多层印刷电路板上打孔已经有一些时候了，但这种应用对监控打孔操作的进行往往没有令人满意的方法。因为组合的各层可能有完全不同的光吸收特性，于是在相继层中可能要求诸如脉冲持续时问、脉冲功率等不同的激光打孔临界参数。     

基于声波控制激光焦点的打孔系统

激光焦点的位置控制是激光打孔中需要解决的技术问题之一,在现有的几种激光焦点控制方法中,其技术核心均为如何通过传感器进行有效的信号测量.对于不同材料的激光打孔技术,研制一种适合材料的焦点位置监测系统就显得尤为重要.通过对不同方法的比较和试验,阐述了一种基于声波传感器的激光打孔焦点控制系统,系统通过加工过程中产生的声波作为控制信号,实时对激光焦点位置进行在线的监测和控制,通过对金刚石进行激光打孔试验,并对比传统控制方法,得到了满意的结果.     

发展中的用于通讯的激光器

普通而平凡的气体激光器已经存在约16年，用现代标准来说，这已是一段较长的时间了。在贝耳体系中，我们已经使用激光器作下列工作：测量距离和位置、辨别材料中的缺陷、监控操作过程；金刚石打孔，用来制造拉铜丝用的模;在制作集成电路的过程中，制造掩模、制备基底和微调电阻。这些用途都很重要，但它们只代表快速发展的激光技术巨大可能性的一小部分。     

复合激光打孔最佳匹配参量的研究

为了有效提高激光打孔的速率和激光能量的利用率，采用长脉冲激光和短脉冲激光空间叠加打孔的方法，对复合激光打孔的最佳匹配参量进行了理论和实验研究。建立复合激光打孔最佳匹配模型，以熔融物的产生和去除达到平衡为准则，理论计算得出长脉冲激光和短脉冲激光的最佳匹配参量和最佳匹配情况下的复合激光打孔速率。同时进行了毫秒脉冲和纳秒脉冲的Nd:YAG激光器复合作用于5mm的不锈钢板的打孔实验。结果表明，在实验中得到的最佳匹配参量下，复合激光打孔速率相比于毫秒脉冲激光单独打孔最大提高了3.3倍。实验和理论模型均证明了复合激光打孔在最佳匹配状态下，打孔速率达到最大，激光能量得到充分利用。     

激光打孔脉冲波形探讨

研究了打孔激光脉冲与材料的相互作用，提出一种新的深孔加工激光脉冲波形，更符合打孔过程向加工区输入能量的规律性，比常规波形脉冲更有利于打孔加工。     

飞秒激光脉冲烧蚀涡轮叶片材料的仿真和实验

为研究飞秒激光脉冲对涡轮叶片材料的冲击打孔特性，使用双脉冲改写方程的激光光源项，并对涡轮叶片材料进行数值模拟，得到了镍基高温合金在飞秒激光双脉冲冲击打孔下的晶格和电子温度。通过对比单脉冲的模拟结果发现:双脉冲烧蚀情况下，材料电子和晶格出现2个峰值温度，且电子和晶格的平衡温度相比单脉冲提高345ｋ，平衡时间延长了5ps，用 美国Ray Crop生产的飞秒脉冲激光器，对镍基高温合金材料在不同的激光参数下:激光脉冲宽度、激光能量、激光频率、脉冲间隔对材料的烧蚀进行双脉冲打孔，得到孔的形貌特征，并与单脉冲打孔对比发现双脉冲打孔的质量和效率优于单脉冲。     

即食粉筛板的激光打孔

利用脉冲YAG激光加工机，对两块即食粉筛板打孔，给出了打孔的工艺参数，并讨论了影响打孔质量的因素。     

激光诱导放电打孔实验研究

研究在空气中使用1.06μm YAG激光诱导放电打孔的方法。在不同的放电脉宽下进行激光诱导放电打孔的实验,比较了激光打孔和激光诱导放电打孔两种方法,指出了激光诱导放电打孔的优点。     

复合脉冲深度激光打孔的实验研究

为了进一步提高激光在金属厚板上深度打孔的速率,针对5mm厚不锈钢板,采用高峰值功率短脉冲串叠加大能量长脉冲的双光束复合激光打孔方法,建立了复合脉冲激光打孔的理论模型,提出大能量长脉冲激光束的主要作用是熔化金属,排出金属熔融物主要靠高峰值功率密度的激光脉冲串,并研究了脉冲能量、脉冲宽度、打孔方式等不同激光参量下的激光打孔效果。结果表明,与长脉冲激光单独激光打孔相比,复合脉冲激光打孔能大幅减小穿孔时间,对脉宽2ms、单脉冲能量2.9J的长脉冲,复合脉冲打孔速率提高2.3倍,所需能量减少20%,且脉冲能量越大,脉冲宽度越窄,打孔速率越快。此研究为复合脉冲打孔的激光器选择提供了依据。     

准连续波激光打孔工艺综述

激光打孔作为在金属上制备各种大小和形状的孔的有效方法,在现代制造业中得到了广泛使用。而准连续波激光相比于连续波激光具有更低的平均功率以及更高的峰值功率,打孔过程中的热效应小,更为适合精密加工;而与短脉冲激光或超短脉冲激光相比,准连续波激光拥有更快的加工速度。因此准连续波激光在激光打孔中具有重大的发展潜力。本文总结了准连续波激光打孔时的激光参数变化对打孔质量产生的影响,以及其他工艺与打孔质量的关系。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.