G.729A声码器高效基音搜索算法研究

为了进一步降低G.729A复杂度,提出了一种高效的基音搜索算法。在对基音搜索的两个环节开环基音分析和闭环搜索进行研究的基础上,分别采用了4：1抽取来减少开环基音分析的搜索范围和改进闭环基音搜索模型的方法。该算法降低了基音搜索时所需要的运算量,在总体上降低了原算法的复杂度。最后通过仿真实验,验证了所提方法的有效性。     

G.729自适应码书搜索算法的研究

G.729语音编码算法复杂,很大程度上要归因于码书搜索算法。为了降低码书搜索复杂度,G.729的简化版G.729A采用了自适应码书的偶样点开环基音搜索,使得编码复杂度大为降低,不过编码仍要花费很多的时间。通过对G.729码书搜索算法的研究,提出了对自适应码书的改进。改进了自适应码书搜索的G.729编码语音质量不低于G.729A的语音质量,但自适应搜索复杂度大大降低。     

G.729A声码器的VC++面向对象封装实现

笔者在ITU—T提供的C代码的基础上对G．729A采用VC 的面向对象封装的方式实现，给出编码中的预处理、LP分析、开环基音搜索、自适应码本搜索、代数码本搜索、增益的量化、状态更新以及解码中的参数解码过程和后处理过程等具体的方法。     

3GPP AMR—NB与ITU—TG．729A语音编码标准技术的对比研究

介绍了AMR—NB与G．729A2种语音编码标准的特点和算法,并就其线性预测分析、基音搜索、代数码书搜索和增益量化4个方面技术进行了比较。在线性预测分析方面主要对2种算法的加窗、LSP量化与内插的不同进行了陈述;在基音搜索方面对开环和闭环基音搜索上的差异进行了分析,并且对代数码书结构和搜索算法及增益参数量化的差别进行了阐述。最后给出了2种编码标准的语音质量、计算复杂度、空间复杂度等性能测试结果。     

一种基于CK嵌入式CPU的G.729A语音编解码器

参考传统的语音压缩编码器的实现方法,提出一种基于CK嵌入式CPU的G.729A语音编解码器.介绍了G.729A语音算法的基本原理,并详细讨论了G.729A算法在国产嵌入式CPU CK510E上实时实现的算法和代码优化方法,实验结果证明优化后算法性能得到了很大地提高,平均编解码一帧语音数据时间小于10 ms,满足实际应用的要求.这些优化的思想也适用于G.729A算法在其他类似CPU平台上的实现.     

基于G.729A的CS-ACELP语音压缩算法的改进

通过对CS-ACELP语音压缩算法的研究,分析了其各个模块复杂度,为使此算法更适合对硬件要求比较苛刻的系统,必须选择运算峰值比较高的模块进行改进。本文在CS-ACELP简化版本G.729A的基础上,主要针对复杂度比较高的自适应码本搜索模块进行改进,最后通过仿真实验,证明了改进算法的有效性。     

AMR 4.75 kbps自适应码本搜索算法的FPGA实现

自适应码本搜索算法是3G移动通信标准AMR的重要组成.利用QusrtusⅡ 6.0平台实现了AMR4.75 kbps速率下的开环基音搜索、闭环基音搜索2个关键环节.文中通过自顶向下及模块化设计思想,将运算及硬件资源消耗分散到各模块中,算法执行速度提高.     

基于共生特性的G.729A基音调制信息隐藏的检测

提出了一种G.729A自适应码本分组基音调制信息隐藏的检测算法.对语音码流的分析发现,通过基音预测进行信息隐藏将改变相邻语音帧中基音周期估计值的共生特性.通过量化这种共生特性,并经过PCA(Principal Component Analysis,主成分分析)降维获得对隐写检测敏感的特征向量.最后基于特征向量和SVM (Support Vector Machine,支持向量机)构建隐写检测器.对不同语音样本数据集的检测表明,当语音长度在2s及以上时,检测正确率均超过96%.此检测算法是一种有效的压缩域信息隐藏检测方法.     

G．729标准码本搜索算法分析及优化

G.729用固定码本和自适应码本构成的激励通过合成滤波器恢复出较高质量的语音信号.由于算法复杂耗时过多,不能在DSP上实时实现,其中固定码本搜索和自适应码本搜索是最复杂的模块.介绍了码本搜索方法并进行了改进,使复杂度大大降低.结果表明语音质量没有明显下降.     

基于DSP的语音编码系统设计

G.729是国际电信联盟(ITU)于1996年推出的语音压缩标准,G.729A是ITU最新推出的语音编码标准G.729的简化版本.根据TMS320C5410的特点,提出了采用G.729A语音编解码算法设计的语音压缩系统.给出了系统的硬件结构,包括手动复位电路、晶振电路、电源电路的设计,以及CPLD在DSP系统中的控制分析.此外,还给出软件编程,以及定点优化时的一些原则和方法.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.