Up to 16 dB improvement in detected voltage using two-section semiconductor optical amplifier detector

A semiconductor optical amplifier detector with an improved responsivity, obtained using two contacts is demonstrated. It is shown hat up to 16 dB improvement in detected output voltage may be obtained for a semiconductor optical amplifier with an internal gain of 30 dB. Initial experimental results showing a 4 dB improvement are presented.<>     

A 90-dBΩ 10-Gb/s Optical Receiver Analog Front-End in a 0.18-μm CMOS Technology

A 10-Gb/s 90-dBOmega optical receiver analog front-end (AFE), including a transimpedance amplifier (TIA), an automatic gain control circuit, and a postamplifier (PA), is fabricated using a 0.18-mum CMOS technology. In contrast with a conventional limiting amplifier architecture, the PA is consisted of a voltage amplifier followed by a slicer. By means of the TIA and the PA codesign, the receiver front-end provides a -3-dB bandwidth of 7.86 GHz and a gain bandwidth product (GBW) of 248.5 THz-Omega. The tiny photocurrent received by the AFE is amplified to a differential voltage swing of 900 mV_pp when driving 50-Omega output loads. The measured input sensitivity of the optical receiver is -13 dBm at a bit-error rate of 10^-12 with a 2³¹-1 pseudorandom test pattern. The optical receiver AFE dissipates a total power of 199 mW from a 1.8-V supply, among which 35 mW is consumed by the output buffer. The chip size is 1300 mumtimes1796 mum     

Analog CMOS design for optical coherence tomography signal detection and processing.

A CMOS circuit was designed and fabricated for optical coherence tomography (OCT) signal detection and processing. The circuit includes a photoreceiver, differential gain stage and lock-in amplifier based demodulator. The photoreceiver consists of a CMOS photodetector and low noise differential transimpedance amplifier which converts the optical interference signal into a voltage. The differential gain stage further amplifies the signal. The in-phase and quadrature channels of the lock-in amplifier each include an analog mixer and switched-capacitor low-pass filter with an external mixer reference signal. The interferogram envelope and phase can be extracted with this configuration, enabling Doppler OCT measurements. A sensitivity of -80 dB is achieved with faithful reproduction of the interferometric signal envelope. A sample image of finger tip is presented.     

Performance limitations of low-voltage regulators using only n-p-ntransistors

Techniques to reduce the sensitivity of the error amplifier to supply voltage and temperature variations in low-voltage regulators which use only n-p-n transistors as active devices are examined. The line regulation for inherently stable error amplifier topologies is bounded below by 0.7 mV/V. Current or voltage sharing imposes a constraint on the gain available from the feedback error amplifier. This has not been previously achieved with n-p-n or BiCMOS circuits. A fully compensated all-n-p-n regulator that achieves the optical performance using feedforward internal bias stabilization is described. The factors degrading line regulation are examined     

A Differential CMOS Current-Mode Variable Gain Amplifier with Digital dB-Linear Gain Control

A novel CMOS variable gain amplifier operating on current signals with a dB-linear gain control is presented. The gain control is achieved by multiplying a digitally synthesized exponentially varying control current signal by a differential input signal in the current domain. A current amplifier at the output sets the gain to the desired level. Current-mode operation allows for a reduced supply voltage by minimizing the voltage swing at the low impedance nodes of the circuit. Multiple circuit realizations for various blocks are presented allowing for designs meeting different constraints. Experimental realization of the variable gain amplifier shows the validity of the presented approach.     

GaInAs/GaInAsP strained quantum well monolithic electroabsorption modulator/amplifier by lateral bandgap control with nonplanar substrates

An electroabsorption modulator and an optical amplifier have been monolithically integrated by using nonplanar MOVPE. A bandgap shift of more than 60nm was obtained with atmospheric pressure MOVPE of GaInAs/GaInAsP strained QWs on 10 mu m wide ridges. A chip gain of 9dB and an excitation ratio of 17dB were obtained for the monolithic electroabsorption modulator/amplifier. The integration of an optical amplifier enables the use of a wavelength close to the bandgap of the modulator, resulting in low voltage and low chirp operation.<>     

Coherent optical tapping using semiconductor optical amplifier

Semiconductor optical amplifiers are attractive not only as optical repeaters but also as functional devices, since carrier density modulation in amplifiers causes a nonlinear phenomenon. Utilizing the effect of the carrier density modulation on the semiconductor optical amplifier junction voltage, a coherent optical tapping is proposed for signal monitoring or control signal extraction. A 155 Mb/s FSK (frequency shift keying) signal tapping was realized with a simple configuration using heterodyne single-filter detection with -24.4 dBm sensitivity. Many applications for this coherent optical tapping are discussed, and basic characteristics for frequency-selective tapping from FDM (frequency division multiplexing) signals and optical amplifier gain control are examined     

1.25 Gb/s低功耗CMOS光接收机限幅放大器

设计并实现了用于光纤用户网和千兆以太网光接收机的限幅放大器。电路采用有源电感负载来拓展带宽、稳定直流工作点 ,通过直接耦合技术来提高增益、降低功耗。测试结果表明 ,在从 5 m Vp- p到 5 0 0 m Vp- p,即40 d B的输入动态范围内 ,在 5 0 Ω负载上的单端输出电压摆幅稳定在 2 80 m Vp- p。在 5 V电源电压下 ,功耗仅为1 30 m W。电路可稳定工作在 1 5 5 Mb/s、62 2 Mb/s、1 .2 5 Gb/s三个速率上。     

A 40 Gbit/s fully integrated optical receiver analog front-end in 90 nm CMOS

A fully integrated 40 Gbit/s optical receiver analog front-end (AFE) including a transimpedance amplifier (TIA) and a limiting amplifier (LA) for short distance communication is described in this paper.The proposed TIA employs a modified regulated cascode (RGC) configuration as input stage,and adopts a third order interleaving active feedback gain stage.The LA utilizes nested active feedback,negative capacitance,and inductor peaking technology to achieve high voltage gain and wide bandwidth.The tiny photo current received by the receiver AFE is amplified to a single-ended voltage swing of 200 mV(p p).Simulation results show that the receiver AFE provides conversion gain of up to 83 and bandwidth of 34.7 GHz,and the equivalent input noise current integrated from 1 MHz to 30 GHz is about 6.6 μA(rms).     

DC-40 GHz光通信系统用GaAs PHEMT驱动放大器。

利用0.2μmGaAsPHEMT工艺研制了40Gb/s光通信系统中的光调制器驱动放大器。该放大器芯片采用有源偏置的七级分布放大器结构,工作带宽达到40GHz,输入输出反射损耗约-10dB,功率增益14dB,功耗700mW,最大电压输出幅度达到7V。两级芯片级连后,功率增益约27dB,在40Gbit/s速率下得到清晰的眼图。     

System performance of optical fibre preamplifier

An optical fibre amplifier has been used as an optical preamplifier for a PIN detector-based receiver. A maximum amplifier gain of 22 dB has been measured and, at this gain with no additional optical filtering, an improvement of 10.5 dB in receiver sensitivity has been achieved.<>     

差分-运放电压串联负反馈的理论计算与仿真分析

设计了直接耦合方式下的差分-运放电压串联负反馈放大电路,根据多级放大器增益的计算方法,采用方框图分析方法,计算出基本放大器的电压增益。另外,对所构建差分-运放电路,采用微变等效电路方法,经计算节点电压,进而得到反馈放大器的电压增益,两者满足负反馈放大电路中的基本关系。同时,启用仿真软件EWB,分别对基本放大器和反馈放大器做仿真分析,结果与理论计算一致,说明方框图分析法在分析反馈放大器中的应用是正确的。     

High-speed multiple-quantum-well optical power amplifier

A multiple-quantum-well optical amplifier is used at 8 Gb/s with high input power such that the average gain is compressed by 2.6 dB. Under these conditions, the output signal level is 35 mW and there is negligible intersymbol interference (ISI) penalty at the receiver. This is possible because of a rapid (7 ps) gain recovery process in the amplifier. A conventional semiconductor amplifier operating at a similar level of gain compression shows 2 dB ISI penalty     

The use of current amplifiers for high performance voltage applications

A current amplifier is used to realize a voltage amplifier having an improved high frequency response and slew rate capability. It is shown that the closed loop bandwidth is independent of the closed loop voltage gain. The design and application of a unity gain and a high gain current amplifier to voltage signal processing circuits are given. The results demonstrate an efficient use of the inherent frequency response capabilities of the active devices in the circuit to achieve the amplification of high frequency and large amplitude voltage signals.     

1310-nm DBR-type MQW gain-clamped semiconductor optical amplifiers with AM-CATV-grade linearity

A 1310-nm gain clamped semiconductor optical amplifier with amplitude modulation CATV-grade linearity at an output power of 8 mW is demonstrated for the first time. The InGaAsP multiquantum-well laser amplifier is equipped with distributed Bragg reflectors at each end to supply the feedback necessary for gain clamping. The TE optical gain of 21.3 dB is measured to be constant within 0.1 dB up to 25-mW signal output power. Electrical signal distortion experiments are presented to demonstrate the linearity of the device.     

Characterization of an InGaAsP semiconductor laser amplifier as amultifunctional device

Multifunctional properties of an InGaAsP semiconductor laser amplifier have been evaluated. A bit error rate of 10^-9 at 100 Mb/s was obtained using the amplifier as a detector at a received optical power of -27 dBm with simultaneous cavity gain of 16 dB. The bandwidth of the amplifier detector was 300 MHz and the maximum responsivity was 30 V/W. The amplifier had a maximum gain of 29 dB and a very large optical on/off ratio of 50 dB. When the amplifier was used as a switch the cavity gain was 19 dB and the extinction ratio was 22 dB     

The influence of diffusion on the stability of the supercritical transferred electron amplifier

The influence of the diffusion coefficient-electric field characteristic on the stability of the supercritical n-GaAs transferred electron amplifier (TEA) with ohmic contacts is investigated in computer simulations. Typical effects of doping profile, bias voltage, and temperature are considered. For a 10-µm 5-Ω TEA, a negative input conductance in the 7-31- GHz range is computed along with a corresponding 37-GHz voltage gain 3-dB bandwidth product in a 50-Ω circuit.     

Analysis of optical gain enhanced erbium-doped fiber amplifiersusing optical filters

Erbium-doped fiber amplifiers (EDFAs) with enhanced optical gain obtained by incorporating narrow-bandpass optical filters into the amplifier length are studied. It is shown in theory that it is possible to increase optical gain by more than 10 dB for optical signals around the wavelength of 1.55 μm, compared with conventional EDFAs without filters. It is also shown that the gain improvement at longer wavelengths away from the amplifier gain peak is much higher than that of the EDFA with an optical isolator within the amplifier length. The optimum filter position is found to be around 42% of the total amplifier length from the input end. The effects of filter insertion loss and pump loss are discussed. This amplifier can be used as an optical preamplifier in a receiver for a wide range of wavelengths     

1.5 μm multiquantum-well semiconductor optical amplifier withtensile and compressively strained wells for polarization-independentgain

A multiquantum-well optical amplifier for 1.5-μm wavelength operation using alternating tensile and compressively strained wells in the active region is described. For each bias level measured, the polarization sensitivity of the amplifier gain is 1 dB or less averaged over the gain bandwidth. This amplifier is suitable for integration with other optical devices in photonic integrated circuits which require polarization-independent gain     

Temperature stabilized transistor amplifiers

A design procedure is evolved based on emitter-base voltage V/SUB EB/ and collector-base voltage V/SUB CB/ as stability parameters with the aim of achieving a gain stabilized transistor amplifier against temperature variations. Silicon transistors have been operated with a fairly stabilized gain in the temperature range from -15/spl deg/ to 270/spl deg/C. The voltage and power gains of this amplifier are found to be reasonably stable against unit to unit replacements. The circuits designed according to this approach are particularly suited for operation of long duration at elevated temperatures. The role of the leakage currents in affecting the operation of a several hour duration at elevated temperatures is investigated experimentally and it is found that the low I/SUB CB0/ units are better suited for such an operation. Further experimentations include the study of the gain stability characteristics of the amplifiers using Darlington pairs, CE-CE tandem connections, two stage RC-coupled amplifier, and the different amplifier.